Abstract:
A method of making a microelectronic assembly includes providing a microelectronic package having a substrate 400, a microelectronic element 410 overlying the substrate 400 and at least two conductive elements 418 projecting from a surface 402 of the substrate 400, the at least two conductive elements 418 having surfaces 434 remote from the surface 402 of the substrate 400. The method includes compressing the at least two conductive elements 418 so that the remote surfaces 434 thereof lie in a common plane, and after the compressing step, providing an encapsulant material 430 around the at least two conductive elements 418 for supporting the microelectronic package and so that the remote surfaces 434 of the at least two conductive elements 418 remain accessible at an exterior surface of the encapsulant material 430.
Abstract:
As disclosed herein, structures and methods are provided for forming capped chips. As provided by the disclosed method, a metal base pattern (26) is formed on a chip (8) insulated from wiring (11) of the chip, and a cap (42) is formed including a metal. The cap (42) is joined to the metal base pattern (26) on the chip to form the capped chip (48). In one embodiment, a front surface (9) of the chip is exposed which extends from a contact (14) or (16) of the chip to an edge (13) of the chip (8). In another embodiment, a conductive connection is formed to the contact (14) or (16), the conductive connection extending from the contact to a terminal (46) at an exposed plane (49) above the front surface (9) of the chip (8).
Abstract:
Various embodiments of packaged chips and ways of fabricating them are disclosed herein. One such packaged chip disclosed herein includes a chip having a front face, a rear face opposite the front face, and a device at one of the front and rear faces, the device being operable as transducer of at least one of acoustic energy and electromagnetic energy, and the chip including a plurality of bond pads exposed to one of the front and rear faces. The packaged chip includes a package element having a dielectric element and a metal layer disposed on the dielectric element, the package element having an inner surface facing the chop and an outer surface facing away from the chip. The metal layer includes a plurality of contacts exposed at at least one of the inner and outer surfaces, the contacts conductively connected to the bond pads. The metal layer further includes a first opening for passage of the at least one of acoustic energy and electromagnetic energy in a direction of at least one of the said device and from said device.
Abstract:
A component 10 can include a substrate 20 having a front surface 22 and a rear surface 21 remote therefrom, an opening 30 extending from the rear surface towards the front surface, and a conductive via 40 extending within the opening. The substrate 20 can have a CTE less than 10 ppm/°C. The opening 30 can define an inner surface 31 between the front and rear surfaces 22, 21. The conductive via 40 can include a first metal layer 41 overlying the inner surface 31 and a second metal region 42 overlying the first metal layer and electrically coupled to the first metal layer. The second metal region 42 can have a CTE greater than a CTE of the first metal layer 41. The conductive via 40 can have an effective CTE across a diameter D of the conductive via that is less than 80% of the CTE of the second metal region 42.
Abstract:
A component 10 can include a substrate 20 having a front surface 22 and a rear surface 21 remote therefrom, an opening 30 extending from the rear surface towards the front surface, and a conductive via 40 extending within the opening. The substrate 20 can have a CTE less than 10 ppm/°C. The opening 30 can define an inner surface 31 between the front and rear surfaces 22, 21. The conductive via 40 can include a first metal layer 41 overlying the inner surface 31 and a second metal region 42 overlying the first metal layer and electrically coupled to the first metal layer. The second metal region 42 can have a CTE greater than a CTE of the first metal layer 41. The conductive via 40 can have an effective CTE across a diameter D of the conductive via that is less than 80% of the CTE of the second metal region 42.
Abstract:
A microelectronic package (10) may have a plurality of terminals (36) disposed at a face (32) thereof which are configured for connection to at least one external component, e.g., a circuit panel (70). First and second microelectronic elements (12), (14) can be affixed with packaging structure (30) therein. A first electrical connection (51A, 40A, 74A) can extend from a respective terminal (36A) of the package (10) to a corresponding contact (20A) on the first microelectronic element (12), and a second electrical connection (53A, 40B, 52A) can extend from the respective terminal (36A) to a corresponding contact (26A) on the second microelectronic element (14), the first and second connections being configured such that a respective signal carried by the first and second connections is subject to propagation delay of the same duration between the respective terminal (36A) and each of the corresponding contacts (20A, 26A) coupled thereto.
Abstract:
A method for making a microelectronic assembly includes providing a microelectronic element 30 with first conductive elements and a dielectric element 50 with second conductive elements. At least some of either the first conductive elements or the second conductive elements may be conductive posts 40 and other of the first or second conductive elements may include a bond metal 10 disposed between some of the conductive posts 40. An underfill layer 60 may overly some of the first or second conductive elements. At least one of the first conductive elements may be moved towards the other of the second conductive elements so that the posts pierce the underfill layer 60 and at least deform the bond metal 10. The microelectronic element 30 and the dielectric element 50 can be heated to join them together. The height of the posts 40 above the surface may be at least forty percent of a distance between surfaces of the microelectronic element 30 and dielectric element 50.
Abstract:
A microelectronic assembly can include a microelectronic device, e.g., semiconductor chip (910), connected together with an interconnection element (930), e.g., substrate, the latter having signal contacts (990) and reference contacts (980). The reference contacts can be connectable to a source of reference potential such as ground or a voltage source other than ground such as a voltage source used for power. Signal conductors, e.g., signal wirebonds (965) can be connected to device contacts (912) exposed at a surface of the microelectronic device (910). Reference conductors, e.g., reference wirebonds (975) can be provided, at least one of which can be connected with two reference contacts (980) of the interconnection element (930). The reference wirebond (975) can have a run which extends at an at least substantially uniform spacing from a signal conductor, e.g., signal wirebond (965) that is connected to the microelectronic device over at least a substantial portion of the length of the signal conductor. In such manner a desired impedance may be achieved for the signal conductor.
Abstract:
A microelectronic interconnect element can include a plurality of first metal lines (110) and plurality of second metal lines (110') interleaved with the first metal lines (110). Each of the first and second metal lines has a surface (122), (120') extending within the same reference plane. The first metal lines (110) have surfaces (120) above the reference plane and remote therefrom and the second metal lines (110') have surfaces (122') below the reference plane and remote therefrom. A dielectric layer (114A) can separate a metal line of the first metal lines from an adjacent metal line of the second metal lines.
Abstract:
A microelectronic interconnect element can include a plurality of first metal lines (110) and plurality of second metal lines (110') interleaved with the first metal lines (110). Each of the first and second metal lines has a surface (122), (120') extending within the same reference plane. The first metal lines (110) have surfaces (120) above the reference plane and remote therefrom and the second metal lines (110') have surfaces (122') below the reference plane and remote therefrom. A dielectric layer (114A) can separate a metal line of the first metal lines from an adjacent metal line of the second metal lines.