STRUCTURE AND METHOD OF FORMING CAPPED CHIPS
    32.
    发明申请
    STRUCTURE AND METHOD OF FORMING CAPPED CHIPS 审中-公开
    结构及其形成方法

    公开(公告)号:WO2006020744A3

    公开(公告)日:2006-06-08

    申请号:PCT/US2005028492

    申请日:2005-08-11

    Abstract: As disclosed herein, structures and methods are provided for forming capped chips. As provided by the disclosed method, a metal base pattern (26) is formed on a chip (8) insulated from wiring (11) of the chip, and a cap (42) is formed including a metal. The cap (42) is joined to the metal base pattern (26) on the chip to form the capped chip (48). In one embodiment, a front surface (9) of the chip is exposed which extends from a contact (14) or (16) of the chip to an edge (13) of the chip (8). In another embodiment, a conductive connection is formed to the contact (14) or (16), the conductive connection extending from the contact to a terminal (46) at an exposed plane (49) above the front surface (9) of the chip (8).

    Abstract translation: 如本文所公开的,提供了用于形成加盖芯片的结构和方法。 如所公开的方法所示,在与芯片的布线(11)绝缘的芯片(8)上形成金属基底图案(26),并且形成包括金属的帽(42)。 帽(42)连接到芯片上的金属基底图案(26)以形成封盖芯片(48)。 在一个实施例中,芯片的前表面(9)暴露,其从芯片的接触件(14)或(16)延伸到芯片(8)的边缘(13)。 在另一个实施例中,导电连接形成于接触件(14)或(16),导电连接件在芯片的前表面(9)上方的暴露平面(49)处从接触件延伸到端子(46) (8)。

    LOW-STRESS VIAS
    34.
    发明申请
    LOW-STRESS VIAS 审中-公开
    低应力VIAS

    公开(公告)号:WO2013019541A4

    公开(公告)日:2013-05-30

    申请号:PCT/US2012048288

    申请日:2012-07-26

    Abstract: A component 10 can include a substrate 20 having a front surface 22 and a rear surface 21 remote therefrom, an opening 30 extending from the rear surface towards the front surface, and a conductive via 40 extending within the opening. The substrate 20 can have a CTE less than 10 ppm/°C. The opening 30 can define an inner surface 31 between the front and rear surfaces 22, 21. The conductive via 40 can include a first metal layer 41 overlying the inner surface 31 and a second metal region 42 overlying the first metal layer and electrically coupled to the first metal layer. The second metal region 42 can have a CTE greater than a CTE of the first metal layer 41. The conductive via 40 can have an effective CTE across a diameter D of the conductive via that is less than 80% of the CTE of the second metal region 42.

    Abstract translation: 部件10可以包括具有前表面22和远离其的后表面21的基板20,从后表面朝向前表面延伸的开口30以及在开口内延伸的导电通孔40。 基板20可以具有小于10ppm /℃的CTE。 开口30可以在前表面22和后表面21之间限定内表面31.导电通孔40可以包括覆盖在内表面31上的第一金属层41和覆盖第一金属层的第二金属区域42,并且电耦合到 第一个金属层。 第二金属区域42可以具有大于第一金属层41的CTE的CTE。导电通孔40可以具有穿过导电通孔的直径D的有效CTE,其小于第二金属的CTE的80% 区域42。

    LOW-STRESS VIAS
    35.
    发明申请
    LOW-STRESS VIAS 审中-公开
    低压力VIAS

    公开(公告)号:WO2013019541A3

    公开(公告)日:2013-04-18

    申请号:PCT/US2012048288

    申请日:2012-07-26

    Abstract: A component 10 can include a substrate 20 having a front surface 22 and a rear surface 21 remote therefrom, an opening 30 extending from the rear surface towards the front surface, and a conductive via 40 extending within the opening. The substrate 20 can have a CTE less than 10 ppm/°C. The opening 30 can define an inner surface 31 between the front and rear surfaces 22, 21. The conductive via 40 can include a first metal layer 41 overlying the inner surface 31 and a second metal region 42 overlying the first metal layer and electrically coupled to the first metal layer. The second metal region 42 can have a CTE greater than a CTE of the first metal layer 41. The conductive via 40 can have an effective CTE across a diameter D of the conductive via that is less than 80% of the CTE of the second metal region 42.

    Abstract translation: 部件10可以包括具有远离其的前表面22和后表面21的基板20,从后表面向前表面延伸的开口30以及在开口内延伸的导电通孔40。 衬底20可具有小于10ppm /℃的CTE。 开口30可以在前表面22和后表面21之间限定内表面31.导电通孔40可以包括覆盖内表面31的第一金属层41和覆盖第一金属层的第二金属区域42, 第一金属层。 第二金属区域42可以具有大于第一金属层41的CTE的CTE。导电通孔40可以在导电通孔的直径D上具有小于第二金属的CTE的80%的有效CTE 区域42。

    MICROELECTRONIC INTERCONNECT ELEMENT WITH DECREASED CONDUCTOR SPACING
    40.
    发明申请
    MICROELECTRONIC INTERCONNECT ELEMENT WITH DECREASED CONDUCTOR SPACING 审中-公开
    具有减小的导体间距的微电子互连元件

    公开(公告)号:WO2010005592A2

    公开(公告)日:2010-01-14

    申请号:PCT/US2009004033

    申请日:2009-07-08

    Abstract: A microelectronic interconnect element can include a plurality of first metal lines (110) and plurality of second metal lines (110') interleaved with the first metal lines (110). Each of the first and second metal lines has a surface (122), (120') extending within the same reference plane. The first metal lines (110) have surfaces (120) above the reference plane and remote therefrom and the second metal lines (110') have surfaces (122') below the reference plane and remote therefrom. A dielectric layer (114A) can separate a metal line of the first metal lines from an adjacent metal line of the second metal lines.

    Abstract translation: 微电子互连元件可以包括与第一金属线(110)交错的多个第一金属线(110)和多个第二金属线(110')。 第一和第二金属线中的每一个具有在同一参考平面内延伸的表面(122),(120')。 第一金属线(110)具有位于参考平面之上并远离其的表面(120),并且第二金属线(110')具有在参考平面之下并远离其的表面(122')。 介电层(114A)可将第一金属线的金属线与第二金属线的相邻金属线分隔开。

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