PACKAGE FOR POWER SEMICONDUCTOR DEVICES
    31.
    发明公开

    公开(公告)号:US20230326913A1

    公开(公告)日:2023-10-12

    申请号:US18334317

    申请日:2023-06-13

    Abstract: In a described example, an apparatus includes: a first mold compound partially covering a thermal pad that extends through a pre-molded package substrate formed of a first mold compound, a portion of the thermal pad exposed on a die side surface of the pre-molded package substrate, the pre-molded package substrate having a recess on the die side surface, with an exposed portion of the thermal pad and a portion of the first mold compound in a die mounting area in the recess; a semiconductor die mounted to the thermal pad and another semiconductor die mounted to the mold compound in the die mounting area; wire bonds coupling bond pads on the semiconductor dies to traces on the pre-molded package substrate; and a second mold compound over the die side surface of the pre-molded package substrate and covering the wire bonds, the semiconductor dies, the recess, and a portion of the traces.

    Multi-pitch leads
    33.
    发明授权

    公开(公告)号:US11094616B2

    公开(公告)日:2021-08-17

    申请号:US16543238

    申请日:2019-08-16

    Abstract: In some examples, a system comprises a die having multiple electrical connectors extending from a surface of the die and a lead coupled to the multiple electrical connectors. The lead comprises a first conductive member; a first non-solder metal plating stacked on the first conductive member; an electroplated layer stacked on the first non-solder metal plating; a second non-solder metal plating stacked on the electroplated layer; and a second conductive member stacked on the second non-solder metal plating, the second conductive member being thinner than the first conductive member. The system also comprises a molding to at least partially encapsulate the die and the lead.

    Electrical device terminal finishing

    公开(公告)号:US10985096B2

    公开(公告)日:2021-04-20

    申请号:US16878576

    申请日:2020-05-19

    Abstract: In described examples, a terminal (e.g., a conductive terminal) includes a base material, a plating stack and a solder finish. The base material can be a metal, such as copper. The plating stack is arranged on a surface of the base material, and includes breaks in the plating stack. The breaks in the plating stack extend from a first surface of the plating stack to a second surface of the plating stack adjacent to the surface of the base material. The solder finish is coated over the breaks in the plating stack.

    MICROELECTRONIC DEVICE WITH PILLARS HAVING FLARED ENDS

    公开(公告)号:US20210098406A1

    公开(公告)日:2021-04-01

    申请号:US16588304

    申请日:2019-09-30

    Abstract: A microelectronic device has a die with a die conductor at a connection surface. The microelectronic device includes a pillar electrically coupled to the die conductor, and a head electrically coupled to the pillar. The pillar has a die-side flared end at a die end of the pillar; the pillar widens progressively along the die-side flared end, and extends outward by more than a lesser of half a thickness of the die conductor and half a lateral width of the pillar midway between a die end and a head end. The pillar has a head-side flared end at a head end of the pillar; the pillar widens progressively along the die-side flared end, and extends outward by a distance that is greater than a lesser of half a thickness of the head and half the lateral width of the pillar. Methods of forming the microelectronic device are disclosed.

    Pre-molded leadframes in semiconductor devices

    公开(公告)号:US10957666B2

    公开(公告)日:2021-03-23

    申请号:US16151026

    申请日:2018-10-03

    Abstract: In one instance, a semiconductor package includes a metal leadframe having a first plurality of openings extending partially into the leadframe from the first side and a second plurality of openings extending partially into the leadframe from the second side together forming a plurality of leads. A pre-mold compound is positioned in the second plurality of openings that at least partially supports the plurality of leads. The semiconductor package has a plurality of bumps extending from the landing sites to a semiconductor die and a molding compounding at least partially covering the plurality of bumps and the metal leadframe. Other packages and methods are disclosed.

    STRUCTURE AND METHOD FOR SEMICONDUCTOR PACKAGING

    公开(公告)号:US20190109105A1

    公开(公告)日:2019-04-11

    申请号:US16148648

    申请日:2018-10-01

    Abstract: A semiconductor packaging structure includes a die including a bond pad and a first metal layer structure disposed on the die, the first metal layer structure having a first width, the first metal layer structure including a first metal layer, the first metal layer electrically coupled to the bond pad. The semiconductor packaging structure also includes a first photosensitive material around sides of the first metal layer structure and a second metal layer structure disposed over the first metal layer structure and over a portion of the first photosensitive material, the second metal layer structure electrically coupled to the first metal layer structure, the second metal layer structure having a second width, where the second width is greater than the first width. Additionally, the semiconductor packaging structure includes a second photosensitive material around sides of the second metal layer structure.

    Leadframes in Semiconductor Devices
    40.
    发明申请

    公开(公告)号:US20190109016A1

    公开(公告)日:2019-04-11

    申请号:US16150986

    申请日:2018-10-03

    Abstract: In one instance, a method of forming a semiconductor package with a leadframe includes cutting, such as with a laser, a first side of a metal strip to a depth D1 according to a cutting pattern to form a first plurality of openings, which may be curvilinear. The method further includes etching the second side of the metal strip to a depth D2 according to a photoresist pattern to form a second plurality of openings. At least some of the first plurality of openings are in fluid communication with at least some of the second plurality of openings to form a plurality of leadframe leads. The depth D1 is shallower than a height H of the metal strip, and the depth D2 is also shallower than the height H. Other embodiments are presented.

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