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    METHOD OF FABRICATING A SILICON-ON-INSULATOR STRUCTURE
    31.
    发明申请
    METHOD OF FABRICATING A SILICON-ON-INSULATOR STRUCTURE 审中-公开
    制造绝缘子硅结构的方法

    公开(公告)号：WO2006079870A1

    公开(公告)日：2006-08-03

    申请号：PCT/IB2005/000446

    申请日：2005-01-31

    Applicant: FREESCALE SEMICONDUCTOR, INC ,  RENAUD, Philippe ,  BERTRAND, Isabelle

    Inventor： RENAUD, Philippe ,  BERTRAND, Isabelle

    IPC: B81C1/00 ,  H01L21/20 ,  H01L21/762

    CPC classification number: B81C1/00611 ,  B81C2201/0119 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02667

    Abstract: In the field of sensor fabrication, it is known to form a silicon-on-insulator starting structure from which fabrication of the sensor based. The present invention provides a method of forming a silicon-on-insulator structure comprising a substrate (102) having an insulating layer (104) patterned thereon. A silicon oxide layer (106) is then deposited over the patterned insulating layer (104) before silicon is grown over both an exposed surface of the substrate (102) as well as the silicon oxide layer (106), mono-crystalline silicon (108) forming on the exposed parts of the substrate (102) and polysilicon (110) forming on the silicon oxide layer (106). After depositing a capping layer 112 over the structure, the wafer is heated, whereby the polysilicon (110) re-crystallises to form mono-crystalline silicon (108), resulting in the insulating layer 104 being buried beneath mono-crystalline silicon.

    Abstract translation: 在传感器制造领域中，已知形成绝缘体上硅开始结构，从而制造基于传感器的开关结构。 本发明提供一种形成绝缘体上硅结构的方法，其包括在其上图案化的绝缘层（104）的衬底（102）。 然后在硅在衬底（102）的暴露表面以及氧化硅层（106），单晶硅（108）之上生长硅之前，在图案化的绝缘层（104）上沉积氧化硅层（106） ）形成在形成在氧化硅层（106）上的衬底（102）和多晶硅（110）的暴露部分上。 在结构上沉积覆盖层112之后，加热晶片，由此多晶硅（110）重新结晶以形成单晶硅（108），导致绝缘层104被埋在单晶硅之下。

    PROCESSING FOR OVERCOMING EXTREME TOPOGRAPHY
    34.
    发明申请
    PROCESSING FOR OVERCOMING EXTREME TOPOGRAPHY 失效
    处理极端地形图

    公开(公告)号：US20110130005A1

    公开(公告)日：2011-06-02

    申请号：US13024711

    申请日：2011-02-10

    Applicant: Guy A. Cohen ,  Steven A. Cordes ,  Sherif A. Goma ,  Joanna Rosner ,  Jeannine M. Trewhella

    Inventor： Guy A. Cohen ,  Steven A. Cordes ,  Sherif A. Goma ,  Joanna Rosner ,  Jeannine M. Trewhella

    IPC: H01L21/3105

    CPC classification number: H01L21/31051 ,  B81C1/00611 ,  B81C2201/0119 ,  H01L21/0272 ,  H01L21/0337 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3212 ,  H01L21/76838

    Abstract: A process for overcoming extreme topographies by first planarizing a cavity in a semiconductor substrate in order to create a planar surface for subsequent lithography processing. As a result of the planarizing process for extreme topographies, subsequent lithography processing is enabled including the deposition of features in close proximity to extreme topographic surfaces (e.g., deep cavities or channels) and, including the deposition of features within a cavity. In a first embodiment, the process for planarizing a cavity in a semiconductor substrate includes the application of dry film resists having high chemical resistance. In a second embodiment, the process for planarizing a cavity includes the filling of cavity using materials such as polymers, spin on glasses, and metallurgy.

    Abstract translation: 通过首先平面化半导体衬底中的空腔以便创建用于后续光刻处理的平坦表面来克服极端形貌的过程。 作为极端形貌的平面化处理的结果，可以进行随后的光刻处理，包括紧邻极端地形表面（例如，深空腔或通道）的特征沉积，并且包括在空腔内沉积特征。 在第一实施例中，用于平面化半导体衬底中的腔的方法包括施加具有高耐化学性的干膜抗蚀剂。 在第二实施例中，用于平坦化空腔的方法包括使用诸如聚合物，玻璃旋转和冶金的材料来填充空腔。

    PROCESSING FOR OVERCOMING EXTREME TOPOGRAPHY
    35.
    发明申请
    PROCESSING FOR OVERCOMING EXTREME TOPOGRAPHY 有权
    处理极端地形图

    公开(公告)号：US20090298292A1

    公开(公告)日：2009-12-03

    申请号：US12538515

    申请日：2009-08-10

    Applicant: Guy A. Cohen ,  Steven A. Cordes ,  Sherif A. Goma ,  Joanna Rosner ,  Jeannine M. Trewhella

    Inventor： Guy A. Cohen ,  Steven A. Cordes ,  Sherif A. Goma ,  Joanna Rosner ,  Jeannine M. Trewhella

    IPC: H01L21/3105

    CPC classification number: H01L21/31051 ,  B81C1/00611 ,  B81C2201/0119 ,  H01L21/0272 ,  H01L21/0337 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3212 ,  H01L21/76838

    Abstract: A process for overcoming extreme topographies by first planarizing a cavity in a semiconductor substrate in order to create a planar surface for subsequent lithography processing. As a result of the planarizing process for extreme topographies, subsequent lithography processing is enabled including the deposition of features in close proximity to extreme topographic surfaces (e.g., deep cavities or channels) and, including the deposition of features within a cavity. In a first embodiment, the process for planarizing a cavity in a semiconductor substrate includes the application of dry film resists having high chemical resistance. In a second embodiment, the process for planarizing a cavity includes the filling of cavity using materials such as polymers, spin on glasses, and metallurgy.

    Abstract translation: 通过首先平面化半导体衬底中的空腔以便创建用于后续光刻处理的平坦表面来克服极端形貌的过程。 作为极端形貌的平面化处理的结果，可以进行随后的光刻处理，包括紧邻极端地形表面（例如，深空腔或通道）的特征沉积，并且包括在空腔内沉积特征。 在第一实施例中，用于平面化半导体衬底中的腔的方法包括施加具有高耐化学性的干膜抗蚀剂。 在第二实施例中，用于平坦化空腔的方法包括使用诸如聚合物，玻璃旋转和冶金的材料来填充空腔。

    Method of Fabricating a Silicon-On-Insulator Structure
    36.
    发明申请
    Method of Fabricating a Silicon-On-Insulator Structure 审中-公开
    一种制造绝缘体上硅结构的方法

    公开(公告)号：US20080213981A1

    公开(公告)日：2008-09-04

    申请号：US11815176

    申请日：2005-01-31

    Applicant: Philippe Renaud ,  Isabelle Bertrand

    Inventor： Philippe Renaud ,  Isabelle Bertrand

    IPC: H01L21/20

    CPC classification number: B81C1/00611 ,  B81C2201/0119 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02667

    Abstract: In the field of sensor fabrication, it is known to form a silicon-on-insulator starting structure from which fabrication of the sensor based. The present invention provides a method of forming a silicon-on-insulator structure comprising a substrate having an insulating layer patterned thereon. A silicon oxide layer is then deposited over the patterned insulating layer before silicon is grown over both an exposed surface of the substrate as well as the silicon oxide layer, mono-crystalline silicon forming on the exposed parts of the substrate and polysilicon forming on the silicon oxide layer. After depositing a capping layer over the structure, the wafer is heated, whereby the polysilicon re-crystallises to form mono-crystalline silicon, resulting in the insulating layer being buried beneath mono-crystalline silicon.

    Abstract translation: 在传感器制造领域中，已知形成绝缘体上硅启动结构，从而制造基于传感器的开关结构。 本发明提供一种形成绝缘体上硅结构的方法，该方法包括在其上构图绝缘层的衬底。 然后在硅在衬底的暴露表面上生长硅以及氧化硅层，在衬底的暴露部分上形成的单晶硅和在硅上形成的多晶硅之后，在图案化的绝缘层上沉积氧化硅层 氧化层。 在结构上沉积覆盖层之后，加热晶片，由此多晶硅再结晶以形成单晶硅，导致绝缘层被埋在单晶硅之下。

    Mems element manufacturing method
    38.
    发明申请
    Mems element manufacturing method 失效
    Mems元件制造方法

    公开(公告)号：US20040077119A1

    公开(公告)日：2004-04-22

    申请号：US10468757

    申请日：2003-08-25

    Inventor： Koichi Ikeda ,  Takashi Kinoshita

    IPC: H01L021/00

    CPC classification number: B81C1/00611 ,  B81B2201/042 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/0119 ,  B81C2201/0125

    Abstract: The present invention provides manufacturing methods of electrostatic type MEME devices, in which planarizing the surface of a driving side electrode, reducing fluctuations in the shape of a beam, improving the performance and the uniformity are aimed at. A manufacturing method according to the present invention includes the steps of: forming a substrate side electrode on a substrate, forming a fluid film before or after forming a sacrificial layer, further forming a beam having a driving side electrode on a planarized surface of the fluid film, and finally, removing the sacrificial layer.

    Abstract translation: 本发明提供了静电型MEME器件的制造方法，其中平面化驱动侧电极的表面，减小了光束形状的波动，提高了性能和均匀性。 根据本发明的制造方法包括以下步骤：在基板上形成基板侧电极，在形成牺牲层之前或之后形成流体膜，在流体的平坦化表面上进一步形成具有驱动侧电极的光束 电影，最后，去除牺牲层。

    Contact planarization materials that generate no volatile byproducts or residue during curing
    39.
    发明申请
    Contact planarization materials that generate no volatile byproducts or residue during curing 有权
    接触在固化期间不产生挥发性副产物或残留物的平面化材料

    公开(公告)号：US20030129542A1

    公开(公告)日：2003-07-10

    申请号：US10282542

    申请日：2002-10-28

    Applicant: BREWER SCIENCE, INC.

    Inventor： Wu-Sheng Shih ,  James E. Lamb III ,  Mark Daffron

    IPC: H01L021/31 ,  H01L021/469 ,  G03F007/00

    CPC classification number: B81C1/0046 ,  B81C1/00611 ,  B81C2201/0119 ,  C08G59/68 ,  C08L63/00 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/312

    Abstract: The present invention is directed towards planarization materials that produce little or no volatile byproducts during the hardening process when used in contact planarization processes. The materials can be hardened by photo-irradiation or by heat during the planarization process, and they include one or more types of monomers, oligomers, or mixtures thereof, an optional cross-linker, and an optional organic reactive solvents. The solvent, if used, is chemically reacted with the monomers or oligomers and thus becomes part of the polymer matrix during the curing process. These materials can be used for damascene, dual damascene, bi-layer, and multi-layer applications, microelectromechanical system (MEMS), packaging, optical devices, photonics, optoelectronics, microelectronics, and sensor devices fabrication.

    Abstract translation: 本发明涉及在用于接触平面化处理时在硬化过程期间产生很少或不产生挥发性副产物的平面化材料。 这些材料可以在平坦化过程中通过光照射或加热来硬化，并且它们包括一种或多种类型的单体，低聚物或其混合物，任选的交联剂和任选的有机反应性溶剂。 溶剂（如果使用的话）与单体或低聚物发生化学反应，因此在固化过程中成为聚合物基质的一部分。 这些材料可用于镶嵌，双镶嵌，双层和多层应用，微机电系统（MEMS），封装，光学器件，光子学，光电子学，微电子学和传感器器件制造。

    Continuous laminar fluid mixing in micro-electromechanical systems
    40.
    发明授权
    Continuous laminar fluid mixing in micro-electromechanical systems 失效
    在微机电系统中连续层流混合

    公开(公告)号：US06520197B2

    公开(公告)日：2003-02-18

    申请号：US09867942

    申请日：2001-05-30

    Applicant: Ajay Deshmukh ,  Dorian Liepmann

    Inventor： Ajay Deshmukh ,  Dorian Liepmann

    IPC: F15C104

    CPC classification number: B01F13/0072 ,  B01F5/0403 ,  B01F13/0093 ,  B01F15/0201 ,  B01F15/024 ,  B01F15/0243 ,  B01F2005/0031 ,  B81C1/00611 ,  B81C2201/0119 ,  Y10T137/0329 ,  Y10T137/2185 ,  Y10T137/2196 ,  Y10T137/2224

    Abstract: A micro-electromechanical system and method for continuous laminar fluid mixing. An embodiment of the invention described in the specification includes a mixing channel, a first delivery channel that is connected to the mixing channel, and a second delivery channel that is connected to the mixing channel. A first pump mechanism produces pulses in the first delivery channel. A second pump mechanism produces pulses in the second delivery channel. The first pulsed fluid stream and the second pulsed fluid stream merge in the mixing channel to form a mixed fluid. The pulses in the fluids operate to distort the interface between the fluids to facilitate diffusion between the fluids.

    Abstract translation: 一种用于连续层流混合的微机电系统和方法。 在说明书中描述的本发明的实施例包括混合通道，连接到混合通道的第一输送通道和连接到混合通道的第二输送通道。 第一泵机构在第一输送通道中产生脉冲。 第二泵机构在第二输送通道中产生脉冲。 第一脉冲流体流和第二脉冲流体流在混合通道中合并形成混合流体。 流体中的脉冲操作以扭曲流体之间的界面，以促进流体之间的扩散。

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