公开(公告)号：US20080254635A1

公开(公告)日：2008-10-16

申请号：US12067569

申请日：2006-09-18

Applicant: Hubert Benzel ,  Stefan Pinter ,  Christoph Schelling ,  Tjalf Pirk ,  Julian Gonska ,  Frank Klopf ,  Christina Leinenbach

Inventor： Hubert Benzel ,  Stefan Pinter ,  Christoph Schelling ,  Tjalf Pirk ,  Julian Gonska ,  Frank Klopf ,  Christina Leinenbach

IPC: H01L21/306

CPC classification number: H01L21/3065 ,  B81C1/00531 ,  B81C2201/0135 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/32135 ,  H01L21/78

Abstract: A method for the plasma-free etching of silicon using the etching gas ClF3 or XeF2 and its use are provided. The silicon is provided having one or more areas to be etched as a layer on the substrate or as the substrate material itself. The silicon is converted into the mixed semiconductor SiGe by introducing germanium and is etched by supplying the etching gas ClF3 or XeF2. The introduction of germanium and the supply of the etching gas ClF3 or XeF2 may be performed at the same time or alternatingly. In particular, it is provided that the introduction of germanium be performed by implanting germanium ions in silicon.

Abstract translation: 提供了使用蚀刻气体ClF 3 X或XeF 2 2等离子体蚀刻硅的方法及其用途。 硅被提供有一个或多个要被蚀刻的区域作为衬底上的层或作为衬底材料本身。 通过引入锗将硅转换成混合半导体SiGe，并通过供给蚀刻气体ClF 3 X或XeF 2 2进行蚀刻。 可以同时或交替地进行锗的引入和蚀刻气体ClF 3 X或XeF 2 2的供给。 特别地，提供通过在锗中注入锗离子来进行锗的引入。

公开(公告)号：KR20180059537A

公开(公告)日：2018-06-04

申请号：KR20187012300

申请日：2016-09-29

IPC: B81B7/00 ,  B81B3/00 ,  B81C1/00 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76816 ,  B81B3/0045 ,  B81B7/0029 ,  B81B2203/0353 ,  B81C1/00674 ,  B81C1/00682 ,  B81C2201/0112 ,  B81C2201/0135 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/485 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181

Abstract: MEMS 소자의구조적특징을조작하기위한시스템및 방법은 MEMS 소자의표면에복수의구멍을에칭하는단계를포함하며, 여기서복수의구멍은 MEMS 소자에 있어서소망하는특정구조적특징을제공하기위해결정된하나이상의기하학적형상을포함한다.