公开(公告)号：CN105682769A

公开(公告)日：2016-06-15

申请号：CN201380080616.8

申请日：2013-10-30

Applicant: 惠普发展公司 ,  有限责任合伙企业

Inventor： 罗格·A·麦凯 ,  帕特里克·W·萨迪克

IPC: B01D39/14 ,  B01D67/00 ,  B01D69/02

CPC classification number: B01D29/0093 ,  B01D35/02 ,  B01D67/0032 ,  B01D67/0062 ,  B01D69/02 ,  B01D2325/021 ,  B81B7/0061 ,  B81C1/00071 ,  B81C1/00119 ,  B81C1/00539 ,  B81C2201/0115 ,  B81C2201/0135 ,  B81C2201/014 ,  C23C14/5873 ,  C23C18/1603 ,  C23F1/00 ,  C23F1/02

Abstract: 一种方法包括：在衬底上形成蚀刻岛，并将具有蚀刻岛的衬底暴露至与蚀刻岛反应的溶液，以在衬底中形成互连孔隙的过滤通道。过滤通道具有进入衬底的入口和离开衬底的出口。

公开(公告)号：CN108602664A

公开(公告)日：2018-09-28

申请号：CN201680070114.0

申请日：2016-09-29

Applicant: 麦穆斯驱动有限公司

Inventor： 罗曼·古铁雷斯 ,  托尼·唐 ,  刘晓磊 ,  王桂芹 ,  马修·恩格

IPC: B81B7/04 ,  B81B5/00 ,  B81B3/00

CPC classification number: H01L21/76816 ,  B81B3/0045 ,  B81B3/007 ,  B81B7/0006 ,  B81B7/0029 ,  B81B2203/0353 ,  B81B2203/0392 ,  B81B2207/056 ,  B81C1/00674 ,  B81C1/00682 ,  B81C2201/0112 ,  B81C2201/0135 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/485 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181

Abstract: 一种用于控制MEMS装置的结构特性的系统和方法，包括：将多个孔蚀刻到所述MEMS装置的表面中；其中多个孔包括被确定为MEMS装置提供所需的特定的结构特性的一个或多个几何形状。

公开(公告)号：US20170256416A1

公开(公告)日：2017-09-07

申请号：US15435838

申请日：2017-02-17

Applicant: Lam Research Corporation

Inventor： Andreas Fischer ,  Thorsten Lill ,  Richard Janek ,  John Boniface

IPC: H01L21/311 ,  C23F1/00 ,  H01J37/32

CPC classification number: H01L21/31122 ,  B81C2201/0135 ,  B81C2201/0142 ,  C23C16/0245 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32082 ,  H01J2237/334 ,  H01L21/30655 ,  H01L21/32136

Abstract: A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, the removal operation configured to remove the modified layer from the substrate surface, wherein removing the modified layer occurs via a ligand exchange reaction that is configured to volatilize the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues generated by the removal operation from the substrate surface, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.

公开(公告)号：US20120032304A1

公开(公告)日：2012-02-09

申请号：US13275383

申请日：2011-10-18

Applicant: Mayumi Yamaguchi ,  Konami Izumi

Inventor： Mayumi Yamaguchi ,  Konami Izumi

IPC: H01L29/93

CPC classification number: H01L27/1203 ,  B81C1/00547 ,  B81C2201/0135 ,  H01L21/84 ,  H01L27/016 ,  H01L27/12 ,  H01L27/13

Abstract: It is an object of the present invention to manufacture a micromachine having a plurality of structural bodies with different functions and to shorten the time required for sacrifice layer etching in a process of manufacturing the micromachine. Another object of the present invention is to prevent a structural layer from being attached to a substrate after the sacrifice layer etching. In other words, an object of the present invention is to provide an inexpensive and high-value-added micromachine by improving throughput and yield. The sacrifice layer etching is conducted in multiple steps. In the multiple steps of the sacrifice layer etching, a part of the sacrifice layer that does not overlap with the structural layer is removed by the earlier sacrifice layer etching and a part of the sacrifice layer that is under the structural layer is removed by the later sacrifice layer etching.

Abstract translation: 本发明的目的是制造具有多个具有不同功能的结构体的微型机械，并且缩短在制造微机械过程中牺牲层蚀刻所需的时间。 本发明的另一个目的是在牺牲层蚀刻之后防止结构层附着到基底上。 换句话说，本发明的目的是通过提高生产量和产量来提供廉价和高附加值的微机械。 牺牲层蚀刻以多个步骤进行。 在牺牲层蚀刻的多个步骤中，通过较早的牺牲层蚀刻去除与结构层不重叠的牺牲层的一部分，并且在结构层之下的部分牺牲层被后面的部分去除 牺牲层蚀刻。

公开(公告)号：EP1712515A3

公开(公告)日：2011-09-14

申请号：EP06075741.6

申请日：2006-03-30

Applicant: Delphi Technologies, Inc.

Inventor： Chilcott, Dan W.

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C2201/0135 ,  B81C2201/014 ,  B81C2201/017

Abstract: A technique (400) for manufacturing a micro-electro mechanical structure includes a number of steps. Initially, a cavity is formed into a first side of a handling wafer (404), with a sidewall of the cavity forming a first angle greater than about 54.7 degrees with respect to a first side of the handling wafer at an opening of the cavity. Then, a bulk etch is performed on the first side of the handling wafer to modify the sidewall of the cavity to a second angle greater than about 90 degrees (406), with respect to the first side of the handling wafer at the opening of the cavity. Next, a second side of a second wafer is bonded to the first side of the handling wafer (408).

公开(公告)号：EP1935009A1

公开(公告)日：2008-06-25

申请号：EP06806773.5

申请日：2006-09-18

Applicant: ROBERT BOSCH GMBH

Inventor： BENZEL, Hubert ,  PINTER, Stefan ,  SCHELLING, Christoph ,  PIRK, Tjalf ,  GONSKA, Julian ,  KLOPF, Frank ,  LEINENBACH, Christina

IPC: H01L21/306 ,  H01L21/3213

CPC classification number: H01L21/3065 ,  B81C1/00531 ,  B81C2201/0135 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/32135 ,  H01L21/78

Abstract: The invention relates to a method for the plasma free etching of silicon with an etching gas ClF3 (15) or XeF2 and to the use thereof. The silicon comprises one or several areas (20) which are to be etched, as a layer on a substrate (1) or as a substrate material. The silicon is transformed into a mixing semiconductor SiGe (40) by introducing germanium (30, 35) and is etched by supplying etching gas ClF3 (15) or XeF2. The germanium (30, 35) is introduced and the etching gas ClF3 (15) or XeF2 is supplied in a temporally parallel or alternating manner. The invention relates to, in particular, the introduction of germanium (30, 35) by implanting germanium-ions (35) into the silicon.

公开(公告)号：EP3356288A1

公开(公告)日：2018-08-08

申请号：EP16852584.8

申请日：2016-09-29

Applicant: Mems Drive Inc.

Inventor： GUTIERREZ, Roman ,  TANG, Tony ,  LIU, Xiaolei ,  WANG, Guiqin ,  NG, Matthew

IPC: B81B7/04 ,  B81B5/00 ,  B81B3/00

CPC classification number: H01L21/76816 ,  B81B3/0045 ,  B81B7/0029 ,  B81B2203/0353 ,  B81C1/00674 ,  B81C1/00682 ,  B81C2201/0112 ,  B81C2201/0135 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/485 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181

Abstract: A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

公开(公告)号：EP1712515A2

公开(公告)日：2006-10-18

申请号：EP06075741.6

申请日：2006-03-30

Applicant: Delphi Technologies, Inc.

Inventor： Chilcott, Dan W.

IPC: B81C1/00

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C2201/0135 ,  B81C2201/014 ,  B81C2201/017

Abstract: A technique (400) for manufacturing a micro-electro mechanical structure includes a number of steps. Initially, a cavity is formed into a first side of a handling wafer (404), with a sidewall of the cavity forming a first angle greater than about 54.7 degrees with respect to a first side of the handling wafer at an opening of the cavity. Then, a bulk etch is performed on the first side of the handling wafer to modify the sidewall of the cavity to a second angle greater than about 90 degrees (406), with respect to the first side of the handling wafer at the opening of the cavity. Next, a second side of a second wafer is bonded to the first side of the handling wafer (408).

Abstract translation: 用于制造微机电结构的技术（400）包括多个步骤。 最初，空腔形成处理晶片（404）的第一侧，空腔的侧壁在空腔的开口处相对于处理晶片的第一侧形成大于约54.7度的第一角度。 然后，在处理晶片的第一侧上执行体蚀刻，以将腔的侧壁相对于处理晶片的开口处的第一侧相对于第二角度大于约90度（406） 腔。 接下来，将第二晶片的第二面接合到处理晶片（408）的第一侧。

公开(公告)号：US20190198345A1

公开(公告)日：2019-06-27

申请号：US16289428

申请日：2019-02-28

Applicant: Lam Research Corporation

Inventor： Andreas Fischer ,  Thorsten Lill ,  Richard Janek ,  John Boniface

IPC: H01L21/311 ,  H01J37/32 ,  C23F4/00 ,  C23F1/12 ,  C23F1/00 ,  C23C16/02 ,  H01L21/3065 ,  H01L21/3213

CPC classification number: H01L21/31122 ,  B81C2201/0135 ,  B81C2201/0142 ,  C23C16/0245 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32082 ,  H01J2237/334 ,  H01L21/30655 ,  H01L21/32136

Abstract: A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, to remove the modified layer from the substrate surface, wherein removing the modified layer includes exposing the substrate surface to a metal complex, such that a ligand exchange reaction occurs between the metal complex and converted species of the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues formed from the exposure of the substrate surface to the metal complex, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.

公开(公告)号：US09617142B1

公开(公告)日：2017-04-11

申请号：US14872123

申请日：2015-09-30

Applicant: MEMS DRIVE, INC.

Inventor： Roman Gutierrez ,  Tony Tang ,  Xiaolei Liu ,  Guiqin Wang ,  Matthew Ng

IPC: B81B7/00 ,  B81B7/02 ,  B81C1/00 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L21/76816 ,  B81B3/0045 ,  B81B7/0029 ,  B81B2203/0353 ,  B81C1/00674 ,  B81C1/00682 ,  B81C2201/0112 ,  B81C2201/0135 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/485 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181

Abstract: A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.