Abstract:
An electron emission device, method of manufacturing the same, and electron emission display including the same are provided to improve the luminous uniformity of the field emission display by forming the resistant layer including a boron nitride material. A cathode electrode(12) is formed on a substrate. An electron emission unit(200) is electrically connected to the cathode electrode. The gate electrode is formed on the top of the cathode electrode. The insulating layer(30) is formed between the gate electrode and the cathode electrode. The resistant layer(230) is electrically connected to the cathode electrode and electron emission unit. The resistant layer comprises a boron nitride material.
Abstract:
An electron emission device, a manufacturing method of the device, and an electron emission display using the same are provided to align a central axis of an electron emission unit with a central axis of a gate electrode opening unit by using a resistance layer as an exposure mask for patterning a mask layer and a sacrificial layer. A resistance layer(12) having an opening unit(121) and a conductive layer(14) separated from the opening unit are laminated on a substrate to form a cathode electrode(16). A transparent dielectric(18) and a transparent gate electrode(20) are formed on the cathode electrode. A first photoresist layer is formed on the top portion of the substrate. The first photoresist layer is patterned by a rear exposure and a development to form an opening unit corresponding to the opening unit of the resistance layer. The gate electrode exposed by the opening unit of the first photoresist layer and the dielectric which is formed under the gate electrode are partially etched to form opening units on the gate electrode and the dielectric. A second photoresist layer is formed on a top portion of the substrate. The second photoresist layer is patterned by a rear exposure and a development to form an opening unit corresponding to the opening unit of the resistance layer. An electron discharge material is applied to the opening unit of the second photoresist layer to form an electron discharge unit(30) on the opening unit of the resistance layer.
Abstract:
An electron emission device and an electron emission display device using the same are provided to apply easily individual resistance to each electron emission unit by improving a composition of a resistance layer without forming isolation electrodes. A plurality of cathode electrodes(14) are formed on a substrate(10). A plurality of gate electrodes(18) are positioned in an insulating state from the cathode electrodes. A plurality of electron emission units(22) are electrically connected with the cathode electrodes. The cathode electrodes include main electrodes(141) having apertures formed at unit pixels on the substrate and a plurality of resistance layers(142) which are in contact with the main electrodes and are positioned at the apertures. The electron emission units are positioned on the resistance layers.
Abstract:
An electron emission device is provided to lower a driving voltage of the electron emission device by forming an isolation electrode using a high conductive material. An electron emission device includes substrates(10,12), a cathode electrode(14), a gate electrode(18), and an electron emitter(20). The cathode electrode is formed on the substrates. The gate electrode is insulated from the cathode electrode. The electron emitter is electrically connected to the cathode electrode. The cathode electrode includes a main electrode(141), an isolation electrode(142), and a resistor layer(143). The main electrode forms openings at every pixel regions on the substrate. The isolation electrode is displaced from the main electrode inside the opening. The resistor layer is formed on the main and isolation electrodes and provides horizontal and vertical resistors to the electron emitter.
Abstract:
An electron emission device and an electron emission display device using the same are provided to uniformly emit electrons from electron emitters by providing resistance to each electron emitter. An electron emission device includes a substrate(10), a resistance layer(14), a cathode electrode, and an electron emitter(24). The resistance layer is formed on the substrate. The cathode electrode is formed on the resistance layer. The electron emitter is connected to the resistance layer and electrically connected to the resistance layer. The resistance layer includes a line portion(141) and an effective portion(142). The line portions are arranged in a stripe pattern along a cross direction of the substrate. The effective portion has an opening and is connected to the line portion.
Abstract:
An electron emission device and an electron emission display device using the same are provided to decrease line resistance for a cathode electrode by maximumly reducing a loss region of the cathode electrode for one electron emission portion. A cathode electrode(14) with a first opening(141) is formed on a substrate(10). A resistive layer(20) with a second opening(201) is formed on the substrate to cover the cathode electrode. An electron emission portion(22) is disposed in the first and second openings, and is electrically connected to the resistive layer. The cathode electrode has a stripe pattern which is formed in a cross direction of the substrate, and the resistive layer has a pattern corresponding to the pattern of the cathode electrode.
Abstract:
An electron emission device and an electron emission display device using the same are provided to emit smoothly electrons therefrom and to enhance luminance thereof by enhancing functional characteristics of a resistive layer. A plurality of cathode electrodes(14) are formed on an upper surface of a substrate. A plurality of gate electrodes(18) are isolated from the plurality of cathode electrodes. A plurality of electron emission units(22) are electrically connected with the cathode electrodes. Each of the cathode electrodes includes a main electrode(141), a plurality of isolation electrodes(142), and a resistive layer(143). The main electrode includes an opening formed at each of unit pixels. The isolation electrodes are positioned apart from the main electrode within the opening. An electron emission unit is positioned on one side of each of the isolation electrodes. The resistive layer is formed to connect electrically the main electrode with each of the isolation electrodes at one side of the isolations electrode.
Abstract:
PURPOSE: The materials is provided to be used for resistance matter that limits the over current in the flat display element. CONSTITUTION: The materials for resistance matter contains a couple of Nitride group and RuO2, and the compound of Nitride contains more than one of TiN, ZrN, MoN, CeN, ScN, HfN, WN, TaN, LaN, TN, CrN, VbN, VN. The manufacturing method for the resistance matter comprises the steps of; mixing 50-99 wt% of the compound of Nitride and 1-50 wt% of RuO2 powder by ball milling; mixing 5-15 wt% of the compound of Nitride, 60-70 wt% of glass for binder, 20-30 wt% of an organic solvent, 2-5 wt% of solid content and making the compound in paste type; spreading on the plate and baking the compound at temperatures of 500-550°C.
Abstract in simplified Chinese:本发明系有关于一种场发射阴极板,包括:一基板;一阴极层,位于该基板表面;一导电层,其表面呈弧面状且位于该阴极层表面,亦或一电阻层,其具有一开孔且其电阻系数大于该阴极层;以及一场发射层,其表面呈弧面状且位于该导电层表面,或位于该导电层开孔中之该阴极层表面,且覆盖周围之该导电层。本发明亦提供一种上述场发射阴极板之制造方法,不需高分辨率及高成本的制程需求,即可提供场发射均匀之阴极板。