公开(公告)号：US4737737A

公开(公告)日：1988-04-12

申请号：US888565

申请日：1986-07-22

Applicant: Amarpal S. Khanna

Inventor： Amarpal S. Khanna

IPC: H03B1/00 ,  H03B5/18 ,  H03L7/24 ,  H03L7/26

CPC classification number: H03L7/24 ,  H03B5/187 ,  H03L7/26 ,  H03B2201/017 ,  H03B5/1847

Abstract: A dielectric resonator oscillator utilizing transmission-type injection-locking for frequency stabilization is disclosed as including a transistor, two microstrip lines, and a dielectric resonator. One microstrip line is coupled to the transistor, while the other microstrip line receives the broadband signal. The dielectric resonator is positioned adjacent to and between the first and second microstrip lines and is operable for coupling an injection-locking signal into the transistor for locking the oscillation frequency of the oscillator. The two microstrip lines are preferably oriented at right angles so that various sizes of the dielectric resonator can be accommodated.

Abstract translation: 公开了一种使用用于频率稳定的透射型注入锁定的介质谐振器振荡器，包括晶体管，两条微带线和介质谐振器。 一个微带线耦合到晶体管，而另一个微带线接收宽带信号。 介质谐振器位于第一和第二微带线之间并且位于第一和第二微带线之间，并且可操作用于将注入锁定信号耦合到晶体管中以锁定振荡器的振荡频率。 两个微带线优选地以直角定向，从而可以容纳各种尺寸的介质谐振器。

公开(公告)号：US4639690A

公开(公告)日：1987-01-27

申请号：US752297

申请日：1985-07-05

Applicant: Gary K. Lewis

Inventor： Gary K. Lewis

IPC: H03B1/00 ,  H03B5/18 ,  H03B7/14 ,  H01P7/10

CPC classification number: H03B5/1876 ,  H03B2201/017 ,  H03B7/14

Abstract: A dielectric-resonator-stabilized, Gallium-Arsenide-FET, negative resistance oscillator operating in the microwave region incorporating an improved form of dielectric resonator whose resonant frequency is tuned by the addition or removal of metal from the surface of a dielectric tuning plate in the resonator, and a method for tuning the oscillator to the desired frequency range with the resonator in place by use of a laser-trimming device are disclosed.

Abstract translation: 介质谐振器稳定化的砷化镓-FET负电阻振荡器在微波区域中工作，结合了改进形式的介质谐振器，其谐振频率通过从介质调谐板的表面中添加或去除金属来调节 公开了一种通过使用激光修整装置将振荡器调谐到期望频率范围的方法，其中谐振器就位。

公开(公告)号：US4325035A

公开(公告)日：1982-04-13

申请号：US123061

申请日：1980-02-20

Applicant: Toshio Nishikawa ,  Yoji Ito ,  Youhei Ishikawa ,  Sadahiro Tamura

Inventor： Toshio Nishikawa ,  Yoji Ito ,  Youhei Ishikawa ,  Sadahiro Tamura

IPC: H03B1/00 ,  H03B5/18

CPC classification number: H03B5/1876 ,  H03B2201/017 ,  H03B5/1829 ,  H03B5/1852

Abstract: A dielectric resonator is housed within an internal space of a metallic casing. An amplifier is disposed outside the space and an input and output circuits are connected to the amplifier. An output coupling window is formed in the casing at the position corresponding to the output circuit of the amplifier and an input coupling window is formed in the casing at the position corresponding to the input circuit of the amplifier. An electromagnetic wave leaking from the output circuit of the amplifier is coupled through the output coupling window to the dielectric resonator and the dielectric resonator is further coupled to the input circuit of the amplifier through the input coupling window.

Abstract translation: 介电谐振器容纳在金属外壳的内部空间内。 放大器设置在空间外部，输入和输出电路连接到放大器。 输出耦合窗口在与放大器的输出电路相对应的位置处形成在壳体中，并且在与放大器的输入电路对应的位置处在壳体中形成输入耦合窗口。 从放大器的输出电路泄漏的电磁波通过输出耦合窗口耦合到介质谐振器，并且介质谐振器通过输入耦合窗口进一步耦合到放大器的输入电路。

公开(公告)号：EP0767531B1

公开(公告)日：2000-02-23

申请号：EP96305054.7

申请日：1996-07-09

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Kashima, Yukiro ,  Morino, Takayoshi, 411 Goody Tsunashima,

IPC: H03B5/18 ,  H03D9/06

CPC classification number: H03B5/1876 ,  H03B2201/017

公开(公告)号：EP0337371A2

公开(公告)日：1989-10-18

申请号：EP89106357.0

申请日：1989-04-11

Applicant: SIEMENS AKTIENGESELLSCHAFT

Inventor： Otremba, Klaus, Ing.(grad) ,  Sartorius, Volker, Dipl.-Ing.

IPC: H03B5/18

CPC classification number: H03B5/1864 ,  H03B2201/017

Abstract: Der dielektrische Resonator eines Mikrowellenoszillators dessen Eigenschaften von der Luftfeuchte abhängig sind, soll hermetisch dicht abgeschlossen werden.
Der dielektrische Resonator (8) ist in einem hermetisch dichten Hohlraum (6) innerhalb eines die elek­trische Schaltung aufnehmenden Metallgehäuses (1) in entsprechender Lage zu Koppelelementen auf einer einseitig ganzflächig metal­lisierten Schichtschaltungsplatte (4) angeordnet.

Abstract translation: 本发明涉及一种具有介质谐振器的微波振荡器。 其特性取决于空气湿度的介质谐振器将被气密密封。 为此，本发明提供了介质谐振器布置在金属壳体内的气密紧密中空空间中，该金属壳体容纳电路相对于金属涂覆在层叠电路板上的耦合元件的适当位置 整个区域的一边。 ... ...

公开(公告)号：EP0247440A3

公开(公告)日：1989-03-29

申请号：EP87106936.5

申请日：1987-05-13

Applicant: MIZAR S.p.A.

Inventor： Nicotra, Sebastiano

IPC: H03B5/18 ,  H01P7/10

CPC classification number: H03B5/1876 ,  H01P7/10 ,  H03B5/1852 ,  H03B2201/017

Abstract: The oscillator according to the invention consists at least of: a body which has a determined geometric structure and is closed by an upper cover with a first tuning screw inserted there through and by a lower cover having inserted therethrough an output connector, a feed filter and preferably a second tuning screw; a resonator which is geometrically homogeneous with the said body structure and is arranged on the inner wall of the lower cover through a spacer; a microstrip also on the lower cover, arranged sideways but coupled with the resonator; a bipolar transistor or a field effect transistor; substrates preferably of fluorine polymers reinforced with fiber-glass; capacitor elements of radiofrequency block and of output by-pass; and resistances to bias, and feed the transistor and to terminate the microstrip.

公开(公告)号：EP0013174A1

公开(公告)日：1980-07-09

申请号：EP79303039.6

申请日：1979-12-21

Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA

Inventor： Ishihara, Osamu c/o Mitsubishi Denki ,  Mori, Tetsurou c/o Mitsubishi Denki ,  Sawano, Hiroshi c/o Mitsubishi Denki

IPC: H03B5/18

CPC classification number: H03B5/1876 ,  H03B5/1852 ,  H03B2201/017

Abstract: A microwave oscillator including a GaAs field effect transistor (2) having a gate electrode, a drain electrode and a source electrode and disposed on a planar substrate. An elongated gate transmission line (30) is connected to the gate electrode of the field effect transistor and disposed on the substrate and terminated by a matching impedance (10). An elongated drain transmission line (40) is connected to the drain electrode of the field effect transistor and disposed on the substrate at a predetermined angle to the gate transmission line while an elongated source transmission line (50) is connected to the source electrode and disposed on the substrate for providing the oscillating output. A dielectric resonator (60) is disposed within an angle formed between the gate transmission line and the drain transmission line.

公开(公告)号：JPS59194518A

公开(公告)日：1984-11-05

申请号：JP7036983

申请日：1983-04-20

Applicant: Matsushita Electric Ind Co Ltd

Inventor： TAKAHASHI HIROSHI ,  MACHIDA TAKASHI

IPC: H03B1/00 ,  H03B5/18

CPC classification number: H03B5/1876 ,  H03B2201/017

Abstract: PURPOSE:To remove oscillation of unnecessary frequency based upon the resonance phenomenon of a metallic case and to obtain stable oscillation only by the resonance frequency of a dielectric resonator by thinning the thickness of the metallic case except a place to which a movable metallic plate is fitted. CONSTITUTION:The movable metallic plate 8 is screwed to the metallic case 7 surrounding a microwave oscillating circuit provided with a micro-strip line 9, a transistor 10 and the dielectric resonator 11 constituted on a dielectric substrate 12 at the upper part of the dielectric resonator 11. The movable metallic plate 8 can be moved vertically by turning the metallic plate 8, so that the resonance frequency of the dielectric resonator 11 can be adjusted. The height of the metallic case 7 is reduced except the fitting place of the movable metallic plate 8. Thus, the resonance frequency of the metallic case 7 in the minimum- order mode can be increasd, so that the resonance frequency of the dielectric resonator 11 can be separated from that of the metallic case 7.

Abstract translation: 目的：为了消除基于金属外壳的共振现象的不必要频率的振荡，仅通过介电谐振器的谐振频率获得稳定的振荡，通过减薄金属壳体的厚度，除了可移动金属板的安装位置之外 。 构成：将可动金属板8螺纹连接在金属壳体7周围，该微波振荡电路设置有微带线9，晶体管10和介质谐振器11，介质谐振器11构成在电介质基板12的介质谐振器的上部 可动金属板8可以通过转动金属板8而垂直移动，从而可以调节介质谐振器11的共振频率。 除了可动金属板8的配合位置之外，金属壳体7的高度减小。因此，以最小顺序模式的金属壳体7的谐振频率可以增加，使得介质谐振器11的谐振频率 可以与金属壳体7分离。

公开(公告)号：JPS59169212A

公开(公告)日：1984-09-25

申请号：JP4499583

申请日：1983-03-16

Applicant: Nec Corp

Inventor： MIZUMURA MOTOO ,  WADA KENZOU

IPC: H01P1/20 ,  H03B1/00 ,  H03B5/18 ,  H03B9/14

CPC classification number: H03B9/14 ,  H03B5/1852 ,  H03B5/1876 ,  H03B2200/0024 ,  H03B2201/017

Abstract: PURPOSE: To attain both hermetic sealing and control of frequency by putting a metallic screw into a hermetically sealed package from outside in opposition to a dielectric resonator and changing the distance between the resonator and the metallic screw.
CONSTITUTION: A package of an oscillator consists of a metallic chassis 17, a cover 8 and a substrate 1 of a high dielectric constant. The bottom part of the chassis 17 has a large thickness, and a tap hole 17a is drilled at the position of a dielectric resonator 2. A metallic screw 22 for control of frequency is fitted into the hole 17a. The rear conductor pattern of the substrate 1 is partially deleted at the lower surface part of the resonator 2. Thus a part of an electromagnetic field excited by the resonator 2 flows out to the hole 17a. The oscillation frequency is controlled by changing the position of the screw 22. The hermetic sealing is assured by means of the chassis 17, the cover 8 and the substrate 1.
COPYRIGHT: (C)1984,JPO&Japio

Abstract translation: 目的：为了实现气密密封和频率控制，将金属螺丝从介质谐振器的外部放入密封的外壳中，并改变谐振器和金属螺钉之间的距离。 构成：振荡器的一个封装包括金属底座17，盖8和高介电常数的基片1。 底座17的底部具有较大的厚度，并且在介质谐振器2的位置上钻出抽头孔17a。用于控制频率的金属螺钉22装配到孔17a中。 基板1的后导体图案在谐振器2的下表面部分被部分地删除。因此，由谐振器2激励的电磁场的一部分流出到孔17a中。 通过改变螺杆22的位置来控制振荡频率。通过底架17，盖8和基板1确保气密密封。

公开(公告)号：KR1020160046127A

公开(公告)日：2016-04-28

申请号：KR1020140141594

申请日：2014-10-20

Applicant: 경기대학교 산학협력단 ,  알에프엠엔씨 주식회사

Inventor： 김응수 ,  강동호 ,  정재일

IPC: C04B35/468 ,  C04B35/462 ,  H01B3/12 ,  H03B5/18

CPC classification number: C04B35/468 ,  C04B35/462 ,  H01B3/12 ,  H03B5/1864 ,  H03B2201/017

Abstract: 본발명은고주파용유전체세라믹스조성물에관한것으로, BaCO, SmO및 TiO를주성분으로하는상기유전체세라믹스조성물은유사한유전특성을갖는기존의고주파유전체조성물보다높은유전율과상대적으로우수한품질계수값을가질뿐 아니라, Sm 치환량(x)과 TiO몰수(n)를변화시킴으로써안정된공진주파수의온도계수조절이가능하였다.

Abstract translation: 本发明涉及一种高频电介质陶瓷组合物。 包含BaCO_3，Sm_2O_3和TiO_2作为主要成分的电介质陶瓷组合物与具有相对于介电陶瓷组合物的介电性能相似的传统高频电介质组合物具有更高的介电常数，并且具有相对优良的品质因数。 此外，本发明的电介质陶瓷组合物可以通过改变Sm取代量（x）和TiO_2的摩尔数（n）来稳定地调节共振频率的温度系数。