Abstract:
A field emission type electron source capable of permitting a resistance value between a cathode wiring and each of emitter cones to be set at substantially the same level and increasing packaging density of the emitter cones. The electron source includes stripe-like cathode wirings arranged on an insulating substrate. The cathode wirings each are formed with a plurality of windows, so that a plurality of island-like cathode conductors and resistance layers different in resistance value from each other are formed separate from the cathode wiring. Then, a resistance layer, an insulating layer and a gate electrode are formed thereon. The gate electrode and insulating layer are formed with apertures in a manner to be common to both, in which the emitter cones are arranged, resulting in emission of electrons from the emitter cones of each group unit being rendered uniform.
Abstract:
A micropoint assembly of a field emission device ("FED") including a baseplate, one or more conductors formed over the baseplate, and one or more micropoints formed over the conductor(s) is disclosed. The micropoint assembly further includes resistive structures associated with specific FED elements that limit current to a maximum level and minimize impact to remaining elements of the device. Any variation in resistivity is uniformly distributed since the same process is consistently applied across a plurality of element locations.
Abstract:
A cold cathode field emission display is described. A key feature of its design is that each group of microtips that constitute a pixel is located on the same equipotential surface and a reliable ballast resistor is interposed between the equipotential surface and the cathode line which powers the pixel. An efficient method for manufacturing the display is also described.
Abstract:
A design for a field emission device comprising a cold cathode emitter, a control gate and a focus gate, is discussed. The focus gate is connected to the emitter voltage source and a ballast resistor is inserted between this connection point and the emitter. This ensures that the focus gate will always be more negative than the emitter, this difference in potential increasing with increasing emitter current. This leads to a linear current-voltage characteristic for the device and also makes for a tighter electron beam than that provided by designs of the prior art. A physical realization of the design is described along with a cost effective method for manufacturing said physical realization.
Abstract:
A field emission device (10) utilizes a resistive layer (13) between an extraction grid (14) and a conductive layer (12) to form a resistor (23). The resistor controls the amount of current flowing through an emission tip (16) of the field emission device (10).
Abstract:
An electron emitter plate (110) for an FED image display has an extraction (gate) electrode (122, 222) spaced by a dielectric insulating layer (25) from a cathode electrode including a conductive mesh (118, 218). Circular arrays (112) of microtips (14) are located concentrically within mesh spacings (116, 216) on a resistive layer (15), within apertures (26) formed on ring-shaped pads (127, 227) patterned in an extraction electrode (122). Mesh spacings (116) and pads (127) are circular. Mesh spacings (226) and pads (227) are hexagonal. For reduced capacitance, dielectric material (25) is etched from cores (144) of rings (127, 227) and from toroidal regions (148) below rings (127, 227). Mesh spacings (116, 216) are hexagonal close-packed and mesh material (118, 218) is removed from portions (142) of cathode electrode. Y-shaped bridging strips (129') have nodes (146) located over removed cathode electrode portions (142).
Abstract:
Titanium tungsten (Ti:W) and aluminum are used in a sublayering arrangement as the metallization material for the gate electrodes 60, cathode electrodes 20, bond pads 80 and 130, lead interconnects 100, 101, 120 and 121, and integrated circuit (IC) mount pads 90 and 91, on the emitter plate 10 of a field emission display. In a disclosed embodiment, titanium tungsten and aluminum sublayers are combined with niobium to provide the metallization material.
Abstract:
A field emission type display device capable of providing display with gradation and permitting the whole display device to be integrated with a display drive circuit section. Memory sections are arranged in correspondence to image cell sections, resulting in static display being accomplished. Also, Light emission of an anode is carried out depending on data held in the memory section, so that a luminous period is increased and adequate luminance is provided at a drive voltage substantially lower than that required for dynamic display. An FEC element is incorporated in each of the memory sections in correspondence to incorporation of an FEC element in each of the image cell sections, so that the image cell sections and memory sections may be concurrently manufactured during manufacturing of the FEC elements, to thereby significantly simplify manufacturing of display device.
Abstract:
A cold cathode field emission display is described. A key feature of its design is that each individual microtip has its own ballast resistor. The latter is formed from a resistive layer that has been interposed between the cathode line and the substrate. When openings for the microtips are formed in the gate line, extending down as far as the resistive layer, an overetching step is introduced. This causes the dielectric layer to be substantially undercut immediately above the resistive layer thereby creating an annular resistor positioned between the gate line and the base of the microtip.
Abstract:
A field emission cathode device comprising a semiconductor substrate, a semiconductor cathode electrode layer, emitter tips formed on the cathode electrode layer to emit electrons therefrom, and a gate electrode layer formed on an insulating layer. Each of the emitter tips is arranged in the aligned apertures of the gate electrode layer and the insulating layer. To electrically isolate two adjacent cathode electrode lines from each other, the cathode electrode layer is made of a semiconductor having a conductivity type different from that of the substrate. Alternatively, the cathode electrode is made of a semiconductor having the same conductivity type as that of the substrate, and in this case, a portion between two adjacent cathode electrode lines is made of a heavily doped semiconductor so as to electrically isolate two adjacent cathode electrodes.