Field emission type electron source
    401.
    发明授权
    Field emission type electron source 失效
    场发射型电子源

    公开(公告)号:US5786659A

    公开(公告)日:1998-07-28

    申请号:US350027

    申请日:1994-11-29

    CPC classification number: H01J3/022 H01J1/3042 H01J2201/319

    Abstract: A field emission type electron source capable of permitting a resistance value between a cathode wiring and each of emitter cones to be set at substantially the same level and increasing packaging density of the emitter cones. The electron source includes stripe-like cathode wirings arranged on an insulating substrate. The cathode wirings each are formed with a plurality of windows, so that a plurality of island-like cathode conductors and resistance layers different in resistance value from each other are formed separate from the cathode wiring. Then, a resistance layer, an insulating layer and a gate electrode are formed thereon. The gate electrode and insulating layer are formed with apertures in a manner to be common to both, in which the emitter cones are arranged, resulting in emission of electrons from the emitter cones of each group unit being rendered uniform.

    Abstract translation: 能够使阴极配线和各个发射极锥体之间的电阻值设定在基本相同的水平并增加发射锥体的封装密度的场致发射型电子源。 电子源包括布置在绝缘基板上的条状阴极布线。 阴极布线各自形成有多个窗口,使得与阴极布线分离地形成彼此电阻值不同的多个岛状阴极导体和电阻层。 然后,在其上形成电阻层,绝缘层和栅电极。 栅极电极和绝缘层以其中布置发射极锥体的共同方式形成有孔,导致来自每个组单元的发射极锥体的电子发射均匀。

    Field emission device micropoint with current-limiting resistive
structure and method for making same
    402.
    发明授权
    Field emission device micropoint with current-limiting resistive structure and method for making same 失效
    具有限流电阻结构的场发射器件微点及其制造方法

    公开(公告)号:US5770919A

    公开(公告)日:1998-06-23

    申请号:US775843

    申请日:1996-12-31

    CPC classification number: H01J1/3042 H01J9/025 H01J2201/319 H01J2329/00

    Abstract: A micropoint assembly of a field emission device ("FED") including a baseplate, one or more conductors formed over the baseplate, and one or more micropoints formed over the conductor(s) is disclosed. The micropoint assembly further includes resistive structures associated with specific FED elements that limit current to a maximum level and minimize impact to remaining elements of the device. Any variation in resistivity is uniformly distributed since the same process is consistently applied across a plurality of element locations.

    Abstract translation: 公开了一种包括基板,形成在基板上的一个或多个导体以及形成在导体上的一个或多个微点的场致发射器件(“FED”)的微点组件。 微点组件还包括与特定FED元件相关联的电阻结构,其将电流限制到最大水平并且最小化对器件的剩余元件的影响。 电阻率的任何变化是均匀分布的,因为相同的过程一贯地应用于多个元件位置。

    Cold cathode field emission display and method for forming it
    403.
    发明授权
    Cold cathode field emission display and method for forming it 失效
    冷阴极场发射显示及其形成方法

    公开(公告)号:US5767619A

    公开(公告)日:1998-06-16

    申请号:US573096

    申请日:1995-12-15

    CPC classification number: H01J3/022 H01J31/127 H01J2201/319

    Abstract: A cold cathode field emission display is described. A key feature of its design is that each group of microtips that constitute a pixel is located on the same equipotential surface and a reliable ballast resistor is interposed between the equipotential surface and the cathode line which powers the pixel. An efficient method for manufacturing the display is also described.

    Abstract translation: 描述冷阴极场致发射显示器。 其设计的一个关键特征是构成像素的每组微尖头位于相同的等电位面上,并且在等电位表面和为像素供电的阴极线之间插入可靠的镇流电阻。 还描述了用于制造显示器的有效方法。

    Linear response field emission device
    404.
    发明授权
    Linear response field emission device 失效
    线性响应场发射装置

    公开(公告)号:US5757138A

    公开(公告)日:1998-05-26

    申请号:US641668

    申请日:1996-05-01

    Applicant: Chun-hui Tsai

    Inventor: Chun-hui Tsai

    CPC classification number: H01J3/022 H01J2201/319

    Abstract: A design for a field emission device comprising a cold cathode emitter, a control gate and a focus gate, is discussed. The focus gate is connected to the emitter voltage source and a ballast resistor is inserted between this connection point and the emitter. This ensures that the focus gate will always be more negative than the emitter, this difference in potential increasing with increasing emitter current. This leads to a linear current-voltage characteristic for the device and also makes for a tighter electron beam than that provided by designs of the prior art. A physical realization of the design is described along with a cost effective method for manufacturing said physical realization.

    Abstract translation: 讨论了包括冷阴极发射器,控制栅极和聚焦栅极的场致发射器件的设计。 聚焦栅极连接到发射极电压源,并在该连接点和发射极之间插入镇流电阻。 这确保了聚焦栅极总是比发射极更负,这种差异随着发射极电流的增加而增加。 这导致器件的线性电流 - 电压特性,并且还使得比现有技术的设计提供的电子束更紧的电子束。 描述了设计的物理实现以及用于制造所述物理实现的成本有效的方法。

    Field emission device current control apparatus and method
    405.
    发明授权
    Field emission device current control apparatus and method 失效
    现场发射装置电流控制装置及方法

    公开(公告)号:US5698933A

    公开(公告)日:1997-12-16

    申请号:US656727

    申请日:1996-06-03

    Inventor: Robert T. Smith

    CPC classification number: H01J3/022 H01J2201/319

    Abstract: A field emission device (10) utilizes a resistive layer (13) between an extraction grid (14) and a conductive layer (12) to form a resistor (23). The resistor controls the amount of current flowing through an emission tip (16) of the field emission device (10).

    Abstract translation: 场发射器件(10)利用提取栅极(14)和导电层(12)之间的电阻层(13)形成电阻器(23)。 电阻器控制流过场致发射器件(10)的发射尖端(16)的电流量。

    Low capacitance field emission device with circular microtip array
    406.
    发明授权
    Low capacitance field emission device with circular microtip array 失效
    具有圆形微尖阵列的低电容场发射器件

    公开(公告)号:US5666024A

    公开(公告)日:1997-09-09

    申请号:US518909

    申请日:1995-08-24

    CPC classification number: H01J1/3042 H01J2201/319

    Abstract: An electron emitter plate (110) for an FED image display has an extraction (gate) electrode (122, 222) spaced by a dielectric insulating layer (25) from a cathode electrode including a conductive mesh (118, 218). Circular arrays (112) of microtips (14) are located concentrically within mesh spacings (116, 216) on a resistive layer (15), within apertures (26) formed on ring-shaped pads (127, 227) patterned in an extraction electrode (122). Mesh spacings (116) and pads (127) are circular. Mesh spacings (226) and pads (227) are hexagonal. For reduced capacitance, dielectric material (25) is etched from cores (144) of rings (127, 227) and from toroidal regions (148) below rings (127, 227). Mesh spacings (116, 216) are hexagonal close-packed and mesh material (118, 218) is removed from portions (142) of cathode electrode. Y-shaped bridging strips (129') have nodes (146) located over removed cathode electrode portions (142).

    Abstract translation: 用于FED图像显示器的电子发射器板(110)具有从包括导电网(118,218)的阴极电极与电介质绝缘层(25)间隔开的提取(栅极)电极(122,222)。 微尖端(14)的圆形阵列(112)同心地位于电阻层(15)上的网格间隔(116,216)内,形成在图案化在引出电极中的环形焊盘(127,227)上的孔(26)内 (122)。 网状间隔(116)和垫(127)是圆形的。 网状间隔(226)和垫(227)是六边形。 对于减小的电容,从环(127,227)的芯(144)和环(127,227)下方的环形区(148)蚀刻电介质材料(25)。 网状间隔(116,216)是六边形紧密堆积的,并且从阴极电极的部分(142)去除网状材料(118,218)。 Y形桥接条(129')具有位于去除的阴极电极部分(142)之上的节点(146)。

    Field emission device metallization including titanium tungsten and
aluminum
    407.
    发明授权
    Field emission device metallization including titanium tungsten and aluminum 失效
    场致发射器件金属化,包括钛钨和铝

    公开(公告)号:US5594297A

    公开(公告)日:1997-01-14

    申请号:US424915

    申请日:1995-04-19

    CPC classification number: H01J29/92 H01J1/3042 H01J2201/319 H01J2329/00

    Abstract: Titanium tungsten (Ti:W) and aluminum are used in a sublayering arrangement as the metallization material for the gate electrodes 60, cathode electrodes 20, bond pads 80 and 130, lead interconnects 100, 101, 120 and 121, and integrated circuit (IC) mount pads 90 and 91, on the emitter plate 10 of a field emission display. In a disclosed embodiment, titanium tungsten and aluminum sublayers are combined with niobium to provide the metallization material.

    Abstract translation: 作为栅极电极60,阴极电极20,接合焊盘80和130,引线互连100,101,120和121以及集成电路(IC)的金属化材料,使用钛钨(Ti:W)和铝作为子层布置 )安装焊盘90和91,在场致发射显示器的发射极板10上。 在公开的实施例中,将钛钨和铝子层与铌组合以提供金属化材料。

    Field emission type display device
    408.
    发明授权
    Field emission type display device 失效
    场致发射型显示装置

    公开(公告)号:US5589738A

    公开(公告)日:1996-12-31

    申请号:US361582

    申请日:1994-12-22

    Abstract: A field emission type display device capable of providing display with gradation and permitting the whole display device to be integrated with a display drive circuit section. Memory sections are arranged in correspondence to image cell sections, resulting in static display being accomplished. Also, Light emission of an anode is carried out depending on data held in the memory section, so that a luminous period is increased and adequate luminance is provided at a drive voltage substantially lower than that required for dynamic display. An FEC element is incorporated in each of the memory sections in correspondence to incorporation of an FEC element in each of the image cell sections, so that the image cell sections and memory sections may be concurrently manufactured during manufacturing of the FEC elements, to thereby significantly simplify manufacturing of display device.

    Abstract translation: 一种能够提供灰度显示并允许整个显示装置与显示驱动电路部分集成的场致发射型显示装置。 存储器部分对应于图像单元部分布置,导致静态显示被完成。 此外,根据保存在存储器部分中的数据进行阳极的发光,使得在比基本上低于动态显示所需的驱动电压的驱动电压下增加发光周期并提供足够的亮度。 对应于每个图像单元部分中的FEC元素的并入对应于每个存储器部分中并入FEC元素,使得在FEC元件的制造期间可以同时制造图像单元部分和存储器部分,从而显着地 简化显示设备的制造。

    Cold cathode field emission display and method for forming it
    409.
    发明授权
    Cold cathode field emission display and method for forming it 失效
    冷阴极场发射显示及其形成方法

    公开(公告)号:US5578896A

    公开(公告)日:1996-11-26

    申请号:US419435

    申请日:1995-04-10

    Applicant: Jammy C. Huang

    Inventor: Jammy C. Huang

    Abstract: A cold cathode field emission display is described. A key feature of its design is that each individual microtip has its own ballast resistor. The latter is formed from a resistive layer that has been interposed between the cathode line and the substrate. When openings for the microtips are formed in the gate line, extending down as far as the resistive layer, an overetching step is introduced. This causes the dielectric layer to be substantially undercut immediately above the resistive layer thereby creating an annular resistor positioned between the gate line and the base of the microtip.

    Abstract translation: 描述冷阴极场致发射显示器。 其设计的一个关键特征是每个单独的微尖端都有自己的镇流电阻。 后者由介于阴极线和衬底之间的电阻层形成。 当在栅极线上形成微尖端的开口时,向下延伸到电阻层一侧,引入过蚀刻步骤。 这使得电介质层在电阻层的正上方基本上被切下,从而形成位于微尖端的栅极线和基极之间的环形电阻器。

    Field emission cathode device made of semiconductor substrate
    410.
    发明授权
    Field emission cathode device made of semiconductor substrate 失效
    由半导体衬底制成的场致发射阴极器件

    公开(公告)号:US5572041A

    公开(公告)日:1996-11-05

    申请号:US121538

    申请日:1993-09-16

    CPC classification number: H01J1/3042 H01J2201/319

    Abstract: A field emission cathode device comprising a semiconductor substrate, a semiconductor cathode electrode layer, emitter tips formed on the cathode electrode layer to emit electrons therefrom, and a gate electrode layer formed on an insulating layer. Each of the emitter tips is arranged in the aligned apertures of the gate electrode layer and the insulating layer. To electrically isolate two adjacent cathode electrode lines from each other, the cathode electrode layer is made of a semiconductor having a conductivity type different from that of the substrate. Alternatively, the cathode electrode is made of a semiconductor having the same conductivity type as that of the substrate, and in this case, a portion between two adjacent cathode electrode lines is made of a heavily doped semiconductor so as to electrically isolate two adjacent cathode electrodes.

    Abstract translation: 一种场发射阴极器件,包括半导体衬底,半导体阴极电极层,形成在阴极电极层上以发射电子的发射极尖端以及形成在绝缘层上的栅电极层。 每个发射极尖端布置在栅极电极层和绝缘层的对齐的孔中。 为了将两个相邻的阴极电极线彼此电绝缘,阴极电极层由具有不同于衬底的导电类型的半导体制成。 或者,阴极由具有与衬底相同的导电类型的半导体制成,并且在这种情况下,两个相邻的阴极电极线之间的部分由重掺杂的半导体制成,从而将两个相邻的阴极电极 。

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