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公开(公告)号：JP2008290814A
公开(公告)日：2008-12-04
申请号：JP2007135978
申请日：2007-05-22
Applicant: Watanabe Shoko:Kk , 株式会社渡辺商行
Inventor： UEHARA AKIRA , TSUDA MASAYUKI , UMEDA MASARU
IPC: B65G51/03
CPC classification number: H01L21/67784 , B65G51/03
Abstract: PROBLEM TO BE SOLVED: To provide a floating conveying device capable of preventing damage on a workpiece by delivering the workpiece only by the float-conveyance without using any robot arm or the like, and easily realizing the large size and the low profile of the workpiece.
SOLUTION: A retractable interdigital slide jetting stand 403 is arranged above a workpiece processing stage 300 arranged below a conveying path surface for floating and conveying a workpiece by spraying compressed gas. A jetting unit for jetting compressed gas upwardly from a space in the slide jetting stand 403 is provided on the workpiece processing stage 300. The workpiece is received in a floating state while the slide jetting stand 403 is located above the workpiece processing stage 300, and the slide jetting stand is retreated to deliver the workpiece W to the workpiece processing stage 300. When the processing in the workpiece processing stage 300 is completed, the workpiece W is floated above a conveying surface by a jetting unit. Thereafter, the slide jetting stand 403 is again located above the workpiece processing stage 300, and the workpiece is received in a floating state and delivered to the conveying path.
COPYRIGHT: (C)2009,JPO&INPITAbstract translation: 要解决的问题：提供一种浮动输送装置，其能够通过在不使用任何机器人手臂等的情况下通过浮子输送输送工件来防止工件受到损伤，并且容易实现大尺寸和低轮廓 的工件。 解决方案：可伸缩叉指式滑动喷射架403布置在布置在输送路径表面下方的工件处理台300的上方，用于通过喷射压缩气体浮动和输送工件。 用于从滑动喷射台403的空间向上喷射压缩气体的喷射单元设置在工件处理台300上。当滑动喷射台403位于工件处理台300上方时，工件被接收为浮动状态，并且 后退处理，将工件W输送到工件加工台300.当工件加工台300的加工完成时，工件W通过喷射单元浮动在输送面的上方。 此后，滑动喷射架403再次位于工件处理台300上方，并且工件被接收在浮动状态并被输送到输送路径。 版权所有（C）2009，JPO＆INPIT
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公开(公告)号：JP2008289966A
公开(公告)日：2008-12-04
申请号：JP2007135980
申请日：2007-05-22
Applicant: Watanabe Shoko:Kk , 株式会社渡辺商行
Inventor： UEHARA AKIRA , TSUDA MASAYUKI , UMEDA MASARU
CPC classification number: B05C5/0254 , B65G49/065 , H01L21/67784
Abstract: PROBLEM TO BE SOLVED: To provide a slit coater capable of performing a surface treatment process on a transportation passage or on a place adjacent to the transportation passage in a series of the manufacturing process without using a contact type transportation robot arm for a workpiece delivery. SOLUTION: The workpiece W is directly transported by a floating transportation frame 102 being a floating transportation part-cum-a surface treatment part constituting a part of the transportation passage for the workpiece W, thereby performing the surface treatment process on the transportation passage or on the place adjacent to the transportation passage in a series of the manufacturing process without using the contact type transportation robot arm for the workpiece delivery. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 要解决的问题：提供一种能够在一系列制造过程中在输送通道或与输送通道相邻的地方进行表面处理处理的缝隙涂布机，而不使用接触型输送机器人手臂 工件交货。 解决方案：工件W通过作为构成工件W的输送通道的一部分的浮动运输部件和表面处理部的浮动运输框架102直接输送，从而对运输进行表面处理处理 通道或在一系列制造过程中与运输通道相邻的位置，而不使用用于工件输送的接触型运输机器人臂。 版权所有（C）2009，JPO＆INPIT
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公开(公告)号：JP2008219026A
公开(公告)日：2008-09-18
申请号：JP2008091661
申请日：2008-03-31
Applicant: Watanabe Shoko:Kk , 株式会社渡辺商行
Inventor： YAMOTO HISAYOSHI , SAKAI RYOICHI , SHOJI MASABUMI , AKUTO KAZUYA , NAGAOKA TAKESHI , WATANUKI HIROSHI
IPC: H01L21/31 , C23C16/44 , C23C16/448
Abstract: PROBLEM TO BE SOLVED: To provide a method for vaporizing a material solution, with which a vaporizer for MOCVD is obtained which eliminates a phenomenon that thin-film materials are adhered to a portion of the vaporizer near and around a spout thereof.
SOLUTION: A carrier gas/small amount oxidizing gas supply part 11 supplies a carrier gas, which is supplied through an internally formed gas passage and which contains a material solution, to a vaporization part; a bubble prevention/material solution supply part 12 supplies a material for preventing generation of bubbles of the carrier gas containing the material solution, and the material solution, into the carrier gas; a solvent vaporization restricting/cooling system 13 restricts the vaporization of a solvent; and a swirl flow preventing gas supply part 14 supplies a gas for preventing the occurrence of swirl flow near a gas outlet of the vaporization part. An atomizing part 15 causes the carrier gas, which contains the material solution and which is ejected from the vaporizer 20, to be formed into a finely atomized state; and a complete vaporization oriented high performance vaporization tube 16 completely vaporizes the carrier gas ejected from the vaporizer 20 and containing the material solution. This enables long-term usage without clogging and the like, and enables stable material supply to a reaction part.
COPYRIGHT: (C)2008,JPO&INPITAbstract translation: 要解决的问题：为了提供一种用于蒸发材料溶液的方法，通过该方法获得用于MOCVD的蒸发器，其消除了薄膜材料附着到其喷嘴附近和周围的一部分蒸发器的现象。 解决方案：载气/少量氧化剂气体供应部分11将通过内部形成的气体通道供应并且含有材料溶液的载气供应到蒸发部分; 气泡防止/物质溶液供给部12将防止含有原料溶液的载气和原料溶液的气泡产生的材料供给到载气中; 溶剂蒸发限制/冷却系统13限制溶剂的蒸发; 并且防涡流防止气体供给部14提供用于防止在汽化部的气体出口附近产生涡流的气体。 雾化部15使含有原料溶液并从蒸发器20喷出的载气形成微细化的状态， 并且完全蒸发取向的高性能蒸发管16使从蒸发器20喷射并容纳材料溶液的载气完全蒸发。 这使得能够长期使用而没有堵塞等，并且能够稳定地供给反应部件。 版权所有（C）2008，JPO＆INPIT
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45.发明专利Ferroelectric thin film, metal thin film, or oxide thin film, and method and apparatus for production thereof; and electronic and electric devices using thin film 审中-公开电镀薄膜，金属薄膜或氧化物薄膜及其生产方法和装置; 和使用薄膜的电子和电气设备
公开(公告)号：JP2008211206A
公开(公告)日：2008-09-11
申请号：JP2008031178
申请日：2008-02-12
Applicant: Masayuki Tsuda , Watanabe Shoko:Kk , 株式会社渡辺商行 , 昌之 都田
Inventor： YAMOTO HISAYOSHI , TSUDA MASAYUKI , KUSUHARA MASAKI , UMEDA MASARU , FUKAGAWA MITSURU
IPC: H01L21/314 , C23C16/40 , C23C16/448 , H01L21/02 , H01L21/316 , H01L21/822 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/115
CPC classification number: H01L27/11502 , C23C16/40 , C23C16/4486 , H01L21/31691 , H01L27/11507 , H01L28/55
Abstract: PROBLEM TO BE SOLVED: To allow a ferroelectric thin film, which has a composition most suitable for obtaining good remnant polarization characteristics and also has a bismuth-based layered crystal structure with high reliability, to be formed with excellent controllability and reproducibility. SOLUTION: A ferroelectric thin film, which has a layered crystal structure and a composition formula of SrBi y Ta 2 O 9±d or Sr x Bi y (Ta, Nb) 2 O 9±d , is formed. In the formula, x is greater than or equal to 0.60 and smaller than 1.00, y is greater than 2.00 and smaller than or equal to 2.50, and d is greater than or equal to 0 and smaller than or equal to 1.00: the carbon content is 5 to 20% of 30 to 40 at.%. COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题为了使得具有最适合获得良好的残余极化特性的组成并且还具有高可靠性的具有铋基的层状晶体结构的铁电薄膜被形成为具有优异的可控性和再现性。
解决方案：具有层状晶体结构和组成式的铁电薄膜，其组成为SrBi Sb 在该式中，x大于或等于0.60且小于1.00，y大于2.00且小于或等于2.50，d大于或等于0且小于或等于1.00：碳含量 为30〜40原子％的5〜20％。 版权所有（C）2008，JPO＆INPIT
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Patent Agency Ranking
公开(公告)号：JP4105778B2
公开(公告)日：2008-06-25
申请号：JP10793597
申请日：1997-04-24
Applicant: 株式会社渡辺商行
IPC: B08B6/00 , H01L21/677 , B65G49/07
CPC classification number: H01L21/67784
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公开(公告)号：JP2007258733A
公开(公告)日：2007-10-04
申请号：JP2007123985
申请日：2007-05-08
Applicant: Masayuki Tsuda , Watanabe Shoko:Kk , 株式会社渡辺商行 , 昌之 都田
Inventor： TSUDA MASAYUKI , KUSUHARA MASAKI , DOI MIKIO , UMEDA MASARU , FUKAGAWA MITSURU , SUGANO YOICHI , UCHISAWA OSAMU , YAMAMOTO KOHEI , MEGURO TOSHIKATSU
IPC: H01L21/31 , C23C16/448
Abstract: PROBLEM TO BE SOLVED: To provide a vaporizer for MOCVD which can obtain a vaporized gas in which a material solution is uniformly dispersed, and to provide a method for vaporizing the material solution. SOLUTION: The vaporizer has (1) a dispersion part 8 which has a gas introducing port 4 for introducing a pressurized carrier gas 3 to a gas passage, a means for supplying a material solution 5a to the gas passage, and a gas exit 7 for sending the carrier gas containing the material solution to a vaporization part 22; and (2) a vaporization part 22 which has a vaporization tube 20 in which one end is connected to a reaction tube of an MOCVD system and the other end is connected to the gas exit 7, and a heating means for heating the vaporization tube 20, and is used for heating and vaporizing the carrier gas containing the material solution sent from the distribution part 8; wherein (3) the distribution part 8 has a main body 1 of the dispersion part having a cylindrical hollow part, a rod 10 having an outer diameter smaller than an inner diameter of the cylindrical hollow part, and a spiral groove 60 in the side of the vaporizer 22 in the periphery of the rod 10. The rod 10 is inserted in the cylindrical hollow part. COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题：提供一种用于MOCVD的蒸发器，其可以获得材料溶液均匀分散的气化气体，并提供用于蒸发材料溶液的方法。 蒸发器具有（1）分散部8，其具有用于将加压载气3导入气体通道的气体导入口4，向气体通路供给材料溶液5a的装置，以及气体 出口7，用于将含有原料溶液的载气送至蒸发部分22; 和（2）蒸发部分22，其具有蒸发管20，其一端连接到MOCVD系统的反应管，另一端连接到气体出口7;加热装置，用于加热蒸发管20 用于对从分配部8送出的含有原料溶液的载气进行加热蒸发， 其中（3）分配部分8具有分散部分的主体1，其具有圆柱形中空部分，具有小于圆柱形中空部分的内径的外径的杆10和位于 蒸汽器22在杆10的周围。杆10插入圆柱形中空部分中。 版权所有（C）2008，JPO＆INPIT
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公开(公告)号：JP3920429B2
公开(公告)日：2007-05-30
申请号：JP33179797
申请日：1997-12-02
Applicant: オルガノ株式会社 , 株式会社ルネサステクノロジ , 株式会社渡辺商行
IPC: B08B3/08 , B08B3/12 , G03F1/26 , G03F1/32 , G03F1/82 , H01L21/027 , H01L21/304
CPC classification number: G03F1/82 , G03F1/32 , Y10S134/902
Abstract: To provide a photomask cleaning method which brings about a high effect of removing residual sulfuric acid or foreign objects and can remove foreign objects effectively without fluctuating the transmission or other properties of the light-shielding layer (MoSiON film) in a phase shift photomask. A method of cleaning a photomask which comprises a first step of cleaning the surface of a photomask used as a master in the photolithography step in the process for the production of semiconductor device with a hot mixture of sulfuric acid and hydrogen peroxide to decompose organic objects present thereon and remove metallic impurities, a second step of removing residual sulfuric acid from the surface of said photomask, a third step of removing foreign objects attached to the surface of said photomask, and a fourth step of drying said photomask which has finished with said first, second and third steps, characterized in that said second step involves the removal of residual sulfuric acid from the surface of said photomask with anodic water and said third step involves the removal of foreign objects with cathodic water.
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公开(公告)号：JP2006119671A
公开(公告)日：2006-05-11
申请号：JP2006005677
申请日：2006-01-13
Applicant: Japan Organo Co Ltd , Renesas Technology Corp , Watanabe Shoko:Kk , オルガノ株式会社 , 株式会社ルネサステクノロジ , 株式会社渡辺商行
Inventor： NAGAMURA YOSHIKAZU , YOSHIOKA NOBUYUKI , USUI HOZUMI , YAMANAKA KOJI
IPC: G03F1/32 , G03F1/82 , H01L21/304
Abstract: PROBLEM TO BE SOLVED: To provide a method for cleaning a photomask which exhibits a profound effect to remove residual sulfuric acid and foreign materials, and is capable of effectively removing foreign materials without giving a variation to the transmissivity, etc. of the light shielding film (MoSiON film) of the phase shift photomask. SOLUTION: The photomask cleaning method comprises a first process for degrading organic matters present on the surface of a photomask used as a master disk in a photoengraving process of semiconductor manufacturing, and for cleaning the photomask using a high-temperature mixture of sulfuric acid and hydrogen peroxide solution for removing metal impurities, a second process for removing the residual sulfuric acid on the surface of the photomask, a third process for removing foreign matters adhered to the surface of the photomask, and a fourth process for drying the photomask after the first, second, and third processes. In the second process, the residual sulfuric acid on the surface of the photomask is removed with the use of anode water. In the third process, the foreign matters are removed with the use of cathode water. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种清洁具有深刻效果以除去残留硫酸和异物的光掩模的方法，并且能够有效地去除异物而不会改变透射率等的变化。 光屏蔽膜（MoSiON膜）的相移光掩模。 解决方案：光掩模清洗方法包括在半导体制造的光刻工艺中用于降解用作母盘的光掩模的表面上存在的有机物的第一种方法，并且使用硫酸的高温混合物来清洁光掩模 用于去除金属杂质的酸和过氧化氢溶液，用于除去光掩模表面上的残留硫酸的第二种方法，第三种除去附着在光掩模表面的杂质的方法，以及第四种用于干燥光掩模的方法 第一，第二和第三过程。 在第二种方法中，使用阳极水除去光掩模表面上的残留硫酸。 在第三种方法中，使用阴极水除去异物。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2005317555A
公开(公告)日：2005-11-10
申请号：JP2005202545
申请日：2005-07-12
Applicant: Quark Systems Co Ltd , Watanabe Shoko:Kk , クォークシステムズ株式会社 , 株式会社渡辺商行
Inventor： NAKAMURA MASARU
Abstract: PROBLEM TO BE SOLVED: To provide a flat type excimer lamp and an excimer irradiation device capable of efficiently irradiating excimer light.
SOLUTION: This excimer lamp 1 is provided with a discharge vessel 2 in a thin box shape, a discharging filler gas 5 filled in the discharge vessel 2, and two electrodes 4, 6 disposed face to face on the outside of the discharge vessel so as to hold the discharge vessel 2 between them, and when a high frequency voltage is impressed between them, excimer light is irradiated to the outside by permeating an excimer irradiating surface which is either one of the two electrodes. Thereby, if a body to be irradiated is placed apart from the excimer irradiating surface by a fixed distance, excimer light with sufficient strength can be efficiently irradiated to the body to be irradiated. In addition, since the excimer light is irradiated from the excimer irradiating surface, all of the irradiated excimer light can be irradiated to the body to be irradiated, and irradiation efficiency is enhanced.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题：提供能够有效地照射准分子光的平面型准分子灯和准分子照射装置。 解决方案：该准分子灯1设置有薄盒形状的放电容器2，填充在放电容器2中的放电填充气体5和在排出口的外侧面对地配置的两个电极4,6 将放电容器2保持在它们之间，并且当在它们之间施加高频电压时，通过渗透作为两个电极中的任一个的准分子发射面而将准分子光照射到外部。 由此，如果要照射的身体与准分子激光照射表面分开一定距离，则能够将有足够强度的准分子光有效地照射到被照射体上。 此外，由于准分子光从准分子发射表面照射，所以照射的所有被照射的准分子光都可以照射到被照射的身体上，并且提高了照射效率。 版权所有（C）2006，JPO＆NCIPI
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