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公开(公告)号:DE2601131C2
公开(公告)日:1983-10-20
申请号:DE2601131
申请日:1976-01-14
Inventor: SAEKI, SHUZO, YOKOHAMA, KANAGAWA, JP
IPC: H01L23/051 , H01L23/48 , H01L23/482 , H01L23/492 , H01L29/74 , H01L29/72
Abstract: The pressure contact type semiconductor device comprises a transistor including a semiconductor substrate, an emitter region having portions protruding from the surface of the substrate and extending in the radial direction from a circle spaced a definite distance from the center of the substrate, a base region surrounding the protruding portions of the emitter region, emitter electrodes provided on respective protruding portions of the emitter region, a collector electrode mounted on the other surface of the substrate, and an electroconductive plate commonly urged against the emitter electrodes.
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公开(公告)号:DE2658181C2
公开(公告)日:1983-05-11
申请号:DE2658181
申请日:1976-12-22
Applicant: THE AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY , NITTO CHEMICAL INDUSTRY CO., LTD., TOKYO, JP
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公开(公告)号:DE2411888C3
公开(公告)日:1982-05-19
申请号:DE2411888
申请日:1974-03-12
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公开(公告)号:DE2252560C3
公开(公告)日:1982-05-19
申请号:DE2252560
申请日:1972-10-26
Inventor: AIKAWA, TEIICHI, NARA, JP , SHIIHARA, ISAO, OSAKA, JP
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公开(公告)号:DE2712849C3
公开(公告)日:1981-02-05
申请号:DE2712849
申请日:1977-03-23
Inventor: YANAGAWA, NORICHIKA, CHIBA , SAWAZAKI, TAKESHI, TOKIO
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公开(公告)号:DE2709621B2
公开(公告)日:1980-04-03
申请号:DE2709621
申请日:1977-03-05
Inventor: SUZUKI, AKIRA, TOKIO , NAKAMURA, KANTARO, YOKOHAMA, KANAGAWA , MAEJIMA, TETSUO, KIYOSE, TOKIO , KAJIURA, MASARU, TOKIO , ASO, TOSHIO, KAWASAKI , ABE, SHOICHI , SUZUKI, TOSHIHISA , TAKEMURA, KATSUAKI , YOKOHAMA, KANAGAWA , KUNO, MASAYA, MACHIDA, TOKIO , YOSHIDA, KAZUMICHI, AOKOHAMA , YOKOKAWA, JUNJI, YAMATO , MIYASUGI, TAKESHI, YOKOHAMA, KANAGAWA , YAGI, HIROSHI, TOKIO , MUKAI, KIYOHISA, YOKOHAMA, KANAGAWA
Abstract: PURPOSE:Reformers for the production of reducing gases by reacting light hydrocarbons ranging from natural gases to naphthas with steam under heating in the presence of catalysts, characterized by supplying heat with high-temerature helium gases from atomic power plants or other high-temperature gases.
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公开(公告)号:DE1936689C3
公开(公告)日:1979-01-25
申请号:DE1936689
申请日:1969-07-18
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公开(公告)号:DE1936689B2
公开(公告)日:1978-06-01
申请号:DE1936689
申请日:1969-07-18
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公开(公告)号:DE3707524C2
公开(公告)日:1993-03-04
申请号:DE3707524
申请日:1987-03-09
Inventor: KATAOKA, TADASHI, YOKOHAMA, KANAGAWA, JP
Abstract: The invention relates to an apparatus for evaluating the slippage of a mechanical seal comprising: a high frequency vibration sensor, attached to the outside of the mechanical seal of a rotary machine equipped with the mechanical seal, for measuring the high frequency vibration which is generated by the mechanical seal in the operating mode; and a microcomputer for receiving the output of the high frequency vibration sensor, for analyzing the high frequency vibration which is generated by the mechanical seal in each state of the slippage surfaces of the mechanical seal, and for outputting the evaluation value of the slippage of the mechanical seal.
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公开(公告)号:DE3610958C2
公开(公告)日:1993-01-21
申请号:DE3610958
申请日:1986-04-02
Applicant: DIRECTOR-GENERAL OF AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY , OJI PAPER CO., LTD., TOKIO/TOKYO, JP
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