POLYOL COMPOSITION AND METHOD OF PRODUCING RIGID POLYURETHANE FOAM THEREFROM
    41.
    发明申请
    POLYOL COMPOSITION AND METHOD OF PRODUCING RIGID POLYURETHANE FOAM THEREFROM 审中-公开
    多元醇组合物及其生产刚性聚氨酯泡沫的方法

    公开(公告)号:WO1990012047A1

    公开(公告)日:1990-10-18

    申请号:PCT/JP1990000465

    申请日:1990-04-06

    CPC classification number: C08G18/5021 C08G2101/0025

    Abstract: A polyol composition for use in the production of a rigid polyurethane foam by the spray process, and a method of producing said foam from said composition by said process. This composition is characterized by comprising a polyol based on an ethylene-diamine/alkylene oxide adduct, a blowing agent based on a halogenated hydrocarbon in an amount smaller than that used in the conventional production or a rigid polyurethane foam by the spray process, and a large amount of water. More specifically the polyol composition comprises a polyol containing at least 45 % by weight of a polyol based on an ethylenediamine/alkylene oxide adduct and having a mean hydroxyl value of 250 to 550, and a blowing agent comprising at most 45 % by weight of a blowing agent based on a low-boiling halogenated hydrocarbon and 1 to 6 parts by weight of water per 100 parts by weight of said polyol.

    METHOD FOR ELECTRICALLY ISOLATING LARGE AREA ELECTRODE BODIES
    43.
    发明申请
    METHOD FOR ELECTRICALLY ISOLATING LARGE AREA ELECTRODE BODIES 审中-公开
    用于电气分离大面积电极体的方法

    公开(公告)号:WO1988006803A1

    公开(公告)日:1988-09-07

    申请号:PCT/JP1988000211

    申请日:1988-02-26

    Abstract: Method for electrically isolating large area electrode bodies to facilitate cascade interconnection of semiconductor bodies which may be deposited afterwards includes applying a maskant in a preselected pattern onto a substrate, depositing a conformal layer of an electrically conductive electrode material atop the patterned maskant and removing the maskant and the electrode material deposited thereon by dissolving in a solvent which is substantially chemically inert with respect to subsequently deposited materials to expose at least portions of the substrate and electrically isolate the remaining portions of the electrode material so that selective electrical interconnections may be made between electrically isolated electrode portions. This method substantially eliminates the need for laser or mechanical scribing of semiconductor bodies on a large area substrate.

    Abstract translation: 用于电隔离大面积电极体以促进随后可能沉积的半导体主体的级联互连的方法包括以预先选择的图案将掩蔽剂施加到衬底上,在图案化掩模剂顶部沉积导电电极材料的共形层并除去掩蔽剂 以及通过溶解在相对于随后沉积的材料基本上化学惰性的溶剂中沉积的电极材料,以暴露至少部分基底并电绝缘电极材料的剩余部分,使得可以在电 隔离电极部分。 该方法基本上消除了对大面积衬底上的半导体本体的激光或机械刻划的需要。

    METHOD OF AND APPARATUS FOR BENDING GLASS PLATE
    44.
    发明申请
    METHOD OF AND APPARATUS FOR BENDING GLASS PLATE 审中-公开
    弯曲玻璃板的方法和装置

    公开(公告)号:WO1998022400A1

    公开(公告)日:1998-05-28

    申请号:PCT/JP1997004236

    申请日:1997-11-20

    CPC classification number: C03B27/0431 C03B23/033 C03B27/0426

    Abstract: A method of bending a glass plate, comprising the steps of using a forming means, composed of roller groups comprising a plurality of rollers arranged above and below a transfer plane, along which a glass plate is transferred, to form by bending the glass plate interposed between the upper and lower rollers, transferring the glass plate while moving positions of the pluraltiy of rollers in the transfer direction in such a manner as to change an area where the glass plate is interposed between the upper and lower rollers, and bending the glass plate with a predetermined curvature, and an apparatus for use therein.

    Abstract translation: 一种弯曲玻璃板的方法,包括以下步骤:使用由辊组组成的辊组,所述辊组包括布置在传送平面上方和下方的多个辊,玻璃板沿着该平面转移,以通过将玻璃板插入 在上辊和下辊之间传送玻璃板,同时沿着传送方向移动多个辊的位置,以便改变玻璃板插入在上辊和下辊之间的区域,并弯曲玻璃板 具有预定的曲率,以及用于其中的装置。

    PROCESS FOR PRODUCING SPUTTERING TARGET
    47.
    发明申请
    PROCESS FOR PRODUCING SPUTTERING TARGET 审中-公开
    生产喷射目标的方法

    公开(公告)号:WO1996036746A1

    公开(公告)日:1996-11-21

    申请号:PCT/JP1996001312

    申请日:1996-05-17

    CPC classification number: C23C14/3414

    Abstract: A process for producing uniform and high-density composite sputtering targets composed of a high-melting substance and a low-melting metal, which comprises molding a mixture of a powder of a high-melting substance having a melting point of 900 DEG C or above with a powder of a low-melting metal having a melting point of 700 DEG C or below at a temperature below the melting point of the metal under heat and pressure. This process if freed from the problem of the conventional production processes comprising melting, hot pressing or atmospheric pressure sintering such that it has been impossible to produce uniform and high-density composite sputtering targets because of the compositional change due to different melting points of the components and the exudation of the low-melting metal as a result of melting thereof.

    Abstract translation: 一种由高熔点物质和低熔点金属组成的均匀高密度复合溅射靶的制造方法,其特征在于,将熔点为900℃以上的高熔点物质的粉末混合成型 在低于金属熔点的温度下,在热和压力下,熔点为700℃以下的低熔点金属粉末。 该方法如果免于常规生产方法的问题,包括熔融,热压或大气压力烧结,使得由于组分的不同熔点导致的组成变化不可能产生均匀和高密度的复合溅射靶 以及由于熔融而使低熔点金属渗出。

    PROCESS FOR PRODUCING DICHLOROPENTAFLUOROPROPANE
    49.
    发明申请
    PROCESS FOR PRODUCING DICHLOROPENTAFLUOROPROPANE 审中-公开
    生产二氯丙烷的方法

    公开(公告)号:WO1992009548A1

    公开(公告)日:1992-06-11

    申请号:PCT/JP1991001627

    申请日:1991-11-27

    CPC classification number: B01J27/135 B01J27/08 B01J27/125 C07C17/278 C07C19/10

    Abstract: A process for producing 3,3-dichloro-1,1,1,2,2-pentafluoropropane (R225ca) and 1,3-dichloro-1,1,2,2,3-pentafluoropropane (R225cb) from tetrafluoroethylene (C2F4) and dichlorofluoromethane (R21) in high yields at high selectivity, by greatly suppressing the formation of by-product impurities which are difficult to separate by an ordinary method, i.e., 2,2-dichloro-1,1,1,3,3-pentafluoropropane (R225aa) and 2,3-dichloro-1,1,1,2,3-pentafluoropropane (R225ba). This process is characterized by using either a catalyst comprising a halogenated oxide containing at least one element selected among those of the groups 4, 5 and 13, such as Ti, Zr, Hf, V, B and Ga, or a catalyst comprising a halogenated oxide containing at least one element selected among those of the groups 4, 5, and 13, such as Ti Zr, Hf, V, B, Al and Ga, and at least one element selected among those of the groups 2, 6, 12 and 14, such as Ba, W, Zn, Si, Bi and P.

    METHOD FOR PRODUCING DICHLOROPENTAFLUOROPROPANES
    50.
    发明申请
    METHOD FOR PRODUCING DICHLOROPENTAFLUOROPROPANES 审中-公开
    生产二氯丙烷的方法

    公开(公告)号:WO1991008183A1

    公开(公告)日:1991-06-13

    申请号:PCT/JP1990001581

    申请日:1990-12-05

    CPC classification number: C07C17/278 C07C19/10

    Abstract: A method for producing a dichloropentafluoropropane, which comprises reacting dichlorofluoromethane (R21) with tetrafluoroethylene (4F) in the presence of a Lewis acid catalyst for addition reaction to obtain dichloropentafluoropropane, wherein a halide containing at least one element selected from the group consisting of Sb, Nb, Ta, B, Ga, In, Zr, Hf and Ti, or AlBr3, or AlI3, is used as the Lewis acid.

    Abstract translation: 一种二氯五氟丙烷的制造方法,其特征在于,在路易斯酸催化剂存在下,使二氯氟甲烷(R21)与四氟乙烯(4F)反应进行加成反应,得到二氯五氟丙烷,其中,含有选自Sb, 使用Nb,Ta,B,Ga,In,Zr,Hf和Ti,或AlBr 3或AlI 3作为路易斯酸。

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