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    Wafer bonding of micro-electro mechanical systems to active circuitry
    44.
    发明专利
    Wafer bonding of micro-electro mechanical systems to active circuitry 未知

    公开(公告)号：GB2421356B

    公开(公告)日：2010-11-24

    申请号：GB0522505

    申请日：2005-11-03

    Applicant: AGILENT TECHNOLOGIES INC ,  AVAGO TECHNOLOGIES WIRELESS IP

    Inventor： DUNGAN THOMAS E ,  FAZZIO RONALD S

    IPC: B81B7/00 ,  B81C99/00 ,  B81C1/00 ,  H01L23/10

    Abstract: A single integrated wafer package includes a micro electromechanical system (MEMS) wafer, an active device wafer, and a seal ring. The MEMS wafer has a first surface and includes at least one MEMS component on its first surface. The active device wafer has a first surface and includes an active device circuit on its first surface. The seal ring is adjacent the first surface of the MEMS wafer such that a seal is formed about the MEMS component. An external contact is provided on the wafer package. The external contact is accessible externally to the wafer package and is electrically coupled to the active device circuit of the active device wafer.

    48.
    发明专利
    未知

    公开(公告)号：DE102004049196B4

    公开(公告)日：2010-01-21

    申请号：DE102004049196

    申请日：2004-10-08

    Applicant: AVAGO TECHNOLOGIES WIRELESS IP

    Inventor： HUYNH NGOC HOA

    IPC: H03H9/05 ,  H03H9/54 ,  H03H9/64

    Abstract: A filter structure comprises a filter having an input port and an output port and a carrier to which the filter is attached having a reference potential area. The input port includes a first pad for receiving an input signal and a second pad for a first reference potential related to the input signal. The output port has a third pad for outputting an output signal and a fourth pad for a second reference potential related to the output signal. A first connecting wire contacts the second pad at a first connection point and the reference potential area at a second connection point. A second connecting wire contacts the fourth pad at a third connection point and contacts the reference potential area at a fourth connection point. A distance between the second and the fourth connection point is smaller than a distance between the first and the third connection point.

    49.
    发明专利
    未知

    公开(公告)号：DE102009023993A1

    公开(公告)日：2009-12-17

    申请号：DE102009023993

    申请日：2009-06-05

    Applicant: AVAGO TECHNOLOGIES WIRELESS IP

    Inventor： WHETTEN TIMOTHY J

    IPC: H01L21/283 ,  G03F7/20 ,  H01L21/768

    Abstract: A semiconductor structure comprises a substrate having a front surface and a back surface and a via extending from the first surface, the via comprising. The via comprises: a first side; a second side parallel to the first side; a first end extending between the first side and the second side; a second end opposite to the first end and extending between the first side and the second side. The first and second ends form oblique angles with the first and second sides. A method of fabricating the vias is also described.

    Coupled resonator device
    50.
    发明专利
    Coupled resonator device 未知

    公开(公告)号：GB2459549A

    公开(公告)日：2009-11-04

    申请号：GB0903443

    申请日：2009-02-27

    Applicant: AVAGO TECHNOLOGIES WIRELESS IP

    Inventor： HANDTMANN MARTIN ,  OPPERMANN KLAUS-GUENTER ,  FRITZ MARTIN

    IPC: H03H9/205 ,  H03H3/02 ,  H03H9/58

    Abstract: A method of manufacturing a coupled resonator device includes forming a first Bulk Acoustic Wave (BAW) device (110a, fig.5a) on a first substrate (220a , fig.5b), forming a second BAW-device 110b on a second substrate (220b, fig.5b), and bonding the BAW-devices such that the first and second BAW-devices are sandwiched between the first and second substrates. The resonators may be trimmed independently of each other prior to bonding. A further advantage is that an acoustic mirror for each BAW-device may be formed on each substrate. Standard methods from semiconductor technology may then be used in the packaging of the stacked, bonded BAW device as no cavity or air interface is required. Keywords: coupled resonator filter, CRF; piezoelectric resonator structure; solidly mounted resonator, SMR; stacked crystal filter, SCF.

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