公开(公告)号：WO2008042580A3

公开(公告)日：2008-04-10

申请号：PCT/US2007/078576

申请日：2007-09-14

Applicant: LAM RESEARCH CORPORATION ,  CHEN, Jack ,  BAILEY, Andrew, D., III ,  MOORING, Ben ,  CAIN, Stephen J.

Inventor： CHEN, Jack ,  BAILEY, Andrew, D., III ,  MOORING, Ben ,  CAIN, Stephen J.

IPC: G01L21/30 ,  G05B15/00 ,  B44C1/22 ,  H01L21/00

Abstract: A method for calculating a process center for a chuck in a processing chamber is provided. The method includes generating pre-processing and post-processing measurement data points, which is perform by measuring thickness of a film substrate at a set of orientations and a set of distances from a geometric center of the substrate. The method also includes comparing the pre-processing and post-processing measurement data points to calculate a set of etch depth numbers. The method further includes generating etch profiles for the set of orientations. The method yet also includes extrapolating a set of radiuses, which is associated with a first etch depth, from the etch profiles. The method yet further includes generating an off-centered plot, which is a graphical representation of the set of radiuses versus the set of orientations. The method more over includes calculating the process center by applying a curve-fitting equation to the off-centered plot.

公开(公告)号：WO2006104842B1

公开(公告)日：2008-01-03

申请号：PCT/US2006010577

申请日：2006-03-24

Applicant: LAM RES CORP ,  BAILEY ANDREW D III

Inventor： BAILEY ANDREW D III

IPC: B25H1/00

CPC classification number: B25J5/00 ,  B08B1/00 ,  B08B9/00 ,  H01J37/32743 ,  H01J37/32862 ,  H01L21/67751 ,  Y10T29/49723

Abstract: A robot apparatus for executing a set of service procedures on a plasma processing system including a docking port is disclosed. The apparatus includes a platform and a docking probe coupled to the platform, wherein the docking probe is configured to dock with the docking port. The apparatus also includes a robot arm coupled to the platform, and further configured to substantially perform the set of service procedures, and a tool coupled to the robot arm. The apparatus further includes a computer coupled to the platform, wherein the computer is further configured to execute the set of service procedures, and wherein when the docking probe is docked to the docking port, the set of service procedures is performed by the tool.

Abstract translation: 公开了一种用于在包括对接端口的等离子体处理系统上执行一组服务程序的机器人装置。 该装置包括耦合到平台的平台和对接探针，其中对接探针配置成与对接端口对接。 该装置还包括联接到平台的机器人臂，并且还被配置为基本上执行该组服务程序，以及联接到机器人手臂的工具。 所述装置还包括耦合到所述平台的计算机，其中所述计算机还被配置为执行所述一组服务过程，并且其中当所述对接探针对接到所述对接端口时，所述一组服务过程由所述工具执行。

公开(公告)号：WO2007130630A2

公开(公告)日：2007-11-15

申请号：PCT/US2007/010929

申请日：2007-05-04

Applicant: LAM RESEARCH CORPORATION ,  YOON, Hyungsuk, Alexander ,  BAILEY, Andrew, D., III. ,  JASON, A., Ryder ,  WILCOXSON, Mark, H. ,  GASPARITSCH, Jeffrey, G. ,  RANDY Johnson ,  HOFFMANN, Stephan, P.

Inventor： YOON, Hyungsuk, Alexander ,  BAILEY, Andrew, D., III. ,  JASON, A., Ryder ,  WILCOXSON, Mark, H. ,  GASPARITSCH, Jeffrey, G. ,  RANDY Johnson ,  HOFFMANN, Stephan, P.

IPC: A47L9/06

CPC classification number: H01L21/67046 ,  Y10S134/902

Abstract: An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.

Abstract translation: 用于清洁基材边缘的装置，系统和方法包括刷毛刷单元，其在清洁化学品存在下使用摩擦接触来清洁沉积在基板边缘上的斜面聚合物。 刷毛单元由多个向外延伸的叶片组成，并安装在旋转轴上。 研磨材料分布在刷毛刷单元的向外延伸的叶片内部和内部，以提供摩擦接触。 刷毛刷单元通过在诸如清洁化学的流体存在下允许多个磨料颗粒与基材的边缘摩擦接触来清洁基材的边缘，以从斜面聚合物的边缘切割，撕裂和撕裂斜面聚合物 底物。

公开(公告)号：WO2006036893A1

公开(公告)日：2006-04-06

申请号：PCT/US2005/034427

申请日：2005-09-23

Applicant: LAM RESEARCH CORPORATION ,  BAILEY, Andrew D, III ,  YADAV, Puneet

Inventor： BAILEY, Andrew D, III ,  YADAV, Puneet

IPC: G06F11/30 ,  G06F15/00 ,  G21C17/00

CPC classification number: H01J37/32935

Abstract: A computer-implemented data presentation technique for presenting a set of expected failure states of system-related constructs pertaining to a plasma processing system is disclosed. The technique includes receiving a set of indicia pertaining to a first system-related construct of said system-related constructs. The technique also includes computing, in accordance with a first sub-method and responsive to said receiving said first set of indicia, a first expected failure state value. The technique further includes computing a first normalized expected failure state value in accordance with a first weight; correlating said first normalized expected failure state value to a first color; and displaying said first color in a cell of an n-dimensional matrix, wherein n is a number greater than 2.

Abstract translation: 公开了一种用于呈现与等离子体处理系统相关的系统相关结构的一组预期故障状态的计算机实现的数据呈现技术。 该技术包括接收与所述系统相关结构的第一系统相关结构有关的一组标记。 该技术还包括根据第一子方法并响应于所述接收所述第一组标记来计算第一预期故障状态值。 该技术还包括根据第一权重来计算第一归一化预期故障状态值; 将所述第一归一化预期故障状态值与第一颜色相关; 以及在n维矩阵的单元格中显示所述第一颜色，其中n是大于2的数字。

公开(公告)号：WO2005094244A2

公开(公告)日：2005-10-13

申请号：PCT/US2004/043911

申请日：2004-12-30

Applicant: LAM RESEARCH CORPORATION ,  BAILEY, Andrew, D., III ,  LOHOKARE, Shrikant, P. ,  HOWALD, Arthur, M. ,  KIM, Yunsang

Inventor： BAILEY, Andrew, D., III ,  LOHOKARE, Shrikant, P. ,  HOWALD, Arthur, M. ,  KIM, Yunsang

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

CPC classification number: B08B7/00 ,  B08B7/0035 ,  B08B7/0071 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32862 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/7684 ,  Y10S438/905

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

Abstract translation: 一种用于清洁处理室的方法，包括将处理室的内表面加热至第一温度。 第一个温度足以使第一个物质变得挥发。 第一种可以是沉积在内表面上的几种物质之一。 将清洁化学品注入到处理室中。 清洁化学品可以与第二种物质反应以将第二种类转化为第一种。 挥发的第一种也可以从处理室输出。 还描述了用于清洁处理室的系统。

公开(公告)号：WO2004030084A3

公开(公告)日：2004-06-24

申请号：PCT/US0330610

申请日：2003-09-24

Applicant: LAM RES CORP ,  BAILEY ANDREW D III ,  YADAV PUNEET ,  MISRA PRATIK

Inventor： BAILEY ANDREW D III ,  YADAV PUNEET ,  MISRA PRATIK

IPC: H01L21/66

CPC classification number: H01L22/20

Abstract: A system and method of for determining multiple uniformity metrics of a semiconductor wafer manufacturing process includes collecting a quantity across each one of a group of semiconductor wafers. The collected quantity data is scaled and a principal component analysis (PCA) is performed on the collected, scaled quantity data to produce a first set of metrics for the first group of semiconductor wafers. The first set of metrics including a first loads matrix and a first scores matrix.

Abstract translation: 用于确定半导体晶片制造工艺的多个均匀性度量的系统和方法包括收集跨越一组半导体晶片中的每一个的数量。 收集的数量数据被缩放并且对收集的缩放量数据执行主成分分析（PCA）以产生用于第一组半导体晶片的第一组度量。 第一组度量包括第一加载矩阵和第一分数矩阵。

公开(公告)号：WO2004012221A2

公开(公告)日：2004-02-05

申请号：PCT/US2003/023304

申请日：2003-07-23

Applicant: LAM RESEARCH CORPORATION ,  LOHOKARE, Shrikant, P ,  KUTHI, Andras ,  BAILEY, Andrew, D., III

Inventor： LOHOKARE, Shrikant, P ,  KUTHI, Andras ,  BAILEY, Andrew, D., III

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32174 ,  H01J37/32431 ,  H01J37/32623

Abstract: An apparatus and method for adjusting the voltage applied to a Faraday shield of an inductively coupled plasma etching apparatus is provided. An appropriate voltage is easily and variably applied to a Faraday shield such that sputtering of a plasma can be controlled to prevent and mitigate deposition of non-volatile reaction products that adversely affect an etching process. The appropriate voltage for a particular etching process or step is applied to the Faraday shield by simply adjusting a tuning capacitor. It is not necessary to mechanically reconfigure the etching apparatus to adjust the Faraday shield voltage.

Abstract translation: 提供了一种用于调整施加到电感耦合等离子体蚀刻装置的法拉第屏蔽的电压的装置和方法。 适当的电压容易且可变地施加到法拉第屏蔽，使得可以控制等离子体的溅射以防止和减轻不利地影响蚀刻工艺的非挥发性反应产物的沉积。 通过简单地调整调谐电容器，将特定蚀刻工艺或步骤的适当电压施加到法拉第屏蔽。 不需要机械地重新配置蚀刻装置来调整法拉第屏蔽电压。

公开(公告)号：WO2004010457A1

公开(公告)日：2004-01-29

申请号：PCT/US2003/022206

申请日：2003-07-17

Applicant: LAM RESEARCH CORPORATION ,  HOWALD, Arthur, M. ,  KUTHI, Andreas ,  WILCOXSON, Mark, Henry ,  BAILEY, Andrew, D., III

Inventor： HOWALD, Arthur, M. ,  KUTHI, Andreas ,  WILCOXSON, Mark, Henry ,  BAILEY, Andrew, D., III

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/3299 ,  H01Q7/00 ,  H01Q21/29 ,  H05H1/46

Abstract: An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.

Abstract translation: 描述了一种用于在等离子体处理装置的处理室的室壁内的等离子体产生区域处产生射频场分布的天线装置。 天线装置包括一个rf感应天线，rf电源可以连接到rf电源，以提供rf电流以产生延伸到等离子体产生区域中的第一rf场。 还提供无源天线，其被感应耦合到rf感应天线并且被配置为生成修改第一rf场的第二rf场。 与没有无源天线的情况相比，等离子体产生区域的射频场分布增加了处理装置的处理均匀性。

公开(公告)号：WO2013078098A1

公开(公告)日：2013-05-30

申请号：PCT/US2012/065684

申请日：2012-11-16

Applicant: LAM RESEARCH CORPORATION ,  BISE, Ryan ,  DHINDSA, Rajinder ,  MARAKHTANOV, Alexei ,  LI, Lumin ,  NAM, Sang, Ki ,  ROGERS, Jim ,  HUDSON, Eric ,  DELGADINO, Gerardo ,  BAILEY, Andrew, D., III ,  KELLOGG, Mike ,  DE LA LIERA, Anthony ,  EHRLICH, Darrell

Inventor： BISE, Ryan ,  DHINDSA, Rajinder ,  MARAKHTANOV, Alexei ,  LI, Lumin ,  NAM, Sang, Ki ,  ROGERS, Jim ,  HUDSON, Eric ,  DELGADINO, Gerardo ,  BAILEY, Andrew, D., III ,  KELLOGG, Mike ,  DE LA LIERA, Anthony ,  EHRLICH, Darrell

IPC: C23F1/08

CPC classification number: H01J37/32449 ,  H01J37/32495 ,  H01J37/32541

Abstract: A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones.

Abstract translation: 等离子体处理的系统和方法包括等离子体处理系统，其包括等离子体室和耦合到等离子体室的控制器。 等离子体室包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心气体注入区域。

公开(公告)号：WO2010117964A3

公开(公告)日：2011-01-13

申请号：PCT/US2010030008

申请日：2010-04-05

Applicant: LAM RES CORP ,  JI BING ,  TAKESHITA KENJI ,  BAILEY ANDREW D III ,  HUDSON ERIC A ,  MORAVEJ MARYAM ,  SIRARD STEPHEN M ,  KO JUNGMIN ,  LE DANIEL ,  HEFTY ROBERT C ,  CHENG YU ,  DELGADINO GERARDO A ,  YEN BI-MING

Inventor： JI BING ,  TAKESHITA KENJI ,  BAILEY ANDREW D III ,  HUDSON ERIC A ,  MORAVEJ MARYAM ,  SIRARD STEPHEN M ,  KO JUNGMIN ,  LE DANIEL ,  HEFTY ROBERT C ,  CHENG YU ,  DELGADINO GERARDO A ,  YEN BI-MING

IPC: H01L21/3065 ,  H05H1/34

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/31138

Abstract: A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.

Abstract translation: 通过本发明的实施例提供了一种用于蚀刻位于有机掩模下方的低k电介质层中的特征的方法。 通过有机掩模将特征蚀刻到低k电介质层中。 在低k电介质层上沉积氟碳层。 氟碳层被固化。 剥去有机面膜。