公开(公告)号：WO2009026240A1

公开(公告)日：2009-02-26

申请号：PCT/US2008073499

申请日：2008-08-18

Applicant: SOLEXEL INC ,  WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M ,  NAG SOMNATH

Inventor： WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M ,  NAG SOMNATH

IPC: B05D1/36 ,  B05D5/00 ,  H01L21/00

CPC classification number: B01D1/22 ,  H01L21/02617 ,  H01L21/6715 ,  H01L22/12 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/1872 ,  H01L31/1892 ,  H01L31/202 ,  H05K1/0284 ,  H05K3/046 ,  H05K3/1258 ,  H05K3/207 ,  H05K2201/09036 ,  H05K2201/09045 ,  H05K2203/0126 ,  H05K2203/0528 ,  H05K2203/308 ,  Y02E10/50 ,  Y02P70/521

Abstract: Methods here disclosed provide for selectively coating the top surfaces or ridges of a 3-D substrate while avoiding liquid coating material wicking into micro cavities on 3-D substrates. The substrate includes holes formed in a three-dimensional substrate by forming a sacrificial layer on a template. The template includes a template substrate with posts and trenches between the posts. The steps include subsequently depositing a semiconductor layer and selectively etching the sacrificial layer. Then, the steps include releasing the semiconductor layer from the template and coating the 3-D substrate using a liquid transfer coating step for applying a liquid coating material to a surface of the 3-D substrate. The method may further include coating the 3-D substrate by selectively coating the top ridges or surfaces of the substrate. Additional features may include filling the micro cavities of the substrate with a filling material, removing the filling material to expose only the substrate surfaces to be coated, coating the substrate with a layer of liquid coating material, and removing said filling material from the micro cavities of the substrate.

Abstract translation: 本文公开的方法提供了选择性涂覆3-D衬底的顶表面或脊，同时避免液体涂层材料芯吸到3-D衬底上的微空腔中。 衬底包括通过在模板上形成牺牲层而形成在三维衬底中的孔。 该模板包括一个模板衬底，在柱子之间有柱子和沟槽。 该步骤包括随后沉积半导体层并选择性地蚀刻牺牲层。 然后，这些步骤包括从模板释放半导体层并且使用液体转移涂覆步骤涂覆3D基板，以将液体涂覆材料涂覆到3D基板的表面。 该方法可以进一步包括通过选择性地涂覆衬底的顶脊或表面来涂覆3D衬底。 另外的特征可以包括用填充材料填充基板的微腔，除去填充材料以仅暴露待涂覆的基板表面，用液体涂层材料涂覆基板，并且从微腔除去所述填充材料 的底物。

公开(公告)号：WO2015100392A2

公开(公告)日：2015-07-02

申请号：PCT/US2014/072299

申请日：2014-12-23

Applicant: SOLEXEL, INC. ,  DESHPANDE, Anand ,  KAPUR, Pawan ,  MOSLEHI, Mehrdad, M. ,  RANA, Virendra, V. ,  SEUTTER, Sean, M.

Inventor： DESHPANDE, Anand ,  KAPUR, Pawan ,  MOSLEHI, Mehrdad, M. ,  RANA, Virendra, V. ,  SEUTTER, Sean, M.

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/0475 ,  H01L31/0682 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

Abstract: According to one aspect of the disclosed subject matter, a method for forming self aligned contacts for monolithically isled back contact back junction solar cells is provided.

Abstract translation: 根据所公开的主题的一个方面，提供了一种用于形成用于单片反接触背面太阳能电池的自对准触点的方法。

公开(公告)号：WO2015100389A2

公开(公告)日：2015-07-02

申请号：PCT/US2014/072294

申请日：2014-12-23

Applicant: SOLEXEL, INC. ,  KAPUR, Pawan ,  DESHAZER, Heather ,  ISLAM, Mohammed ,  MOSLEHI, Mehrdad, M.

Inventor： KAPUR, Pawan ,  DESHAZER, Heather ,  ISLAM, Mohammed ,  MOSLEHI, Mehrdad, M.

CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/0682 ,  Y02E10/547

Abstract: Passivated contact structures and fabrication methods for back contact back junction solar cells are provided. According to one example embodiment, a back contact back junction photovoltaic solar cell is described that has a semiconductor light absorbing layer having a front side and a backside having base regions and emitter regions. An amorphous silicon passivating layer is positioned on the base regions. A first level base and emitter metallization contacts the emitter regions and the amorphous silicon passivating layer on the base regions. An electrically insulating backplane is positioned on the first level base and emitter metallization. A second level metallization contacts the first level base and emitter metallization through conductive vias in the electrically insulating backplane.

Abstract translation: 提供了背接触太阳能电池的钝化接触结构和制造方法。 根据一个示例性实施例，描述了具有正面和背面具有基极区域和发射极区域的半导体光吸收层的背面接合光伏太阳能电池。 非晶硅钝化层位于基极区上。 第一级基极和发射极金属化接触基极区上的发射极区域和非晶硅钝化层。 电绝缘背板位于第一级基底和发射极金属化上。 第二级金属化通过电绝缘背板中的导电通孔接触第一级基极和发射极金属化。

公开(公告)号：WO2014179368A1

公开(公告)日：2014-11-06

申请号：PCT/US2014/035965

申请日：2014-04-29

Applicant: SOLEXEL, INC. ,  RANA, Virendra, V. ,  KAPUR, Pawan ,  SEUTTER, Sean, M. ,  MOSLEHI, Mehrdad, M.

Inventor： RANA, Virendra, V. ,  KAPUR, Pawan ,  SEUTTER, Sean, M. ,  MOSLEHI, Mehrdad, M.

IPC: H01L31/04 ,  H01L21/265 ,  H01L21/205

CPC classification number: H01L31/1864 ,  B23K26/0006 ,  B23K26/0084 ,  B23K26/0624 ,  B23K26/18 ,  B23K2201/40 ,  B23K2203/56 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1868 ,  Y02E10/547

Abstract: The laser patterning methods utilizing a laser absorbent hard mask in combination with wet etching to form patterned solar cell doped regions which may further improve cell efficiency by completely avoiding laser ablation of an underlying semiconductor substrate associated with ablation of an overlying transparent passivation layer.

Abstract translation: 利用激光吸收硬掩模与湿蚀刻结合形成图案化的太阳能电池掺杂区域的激光图案化方法，其可以通过完全避免与覆盖的透明钝化层的消融相关联的下面的半导体衬底的激光烧蚀来进一步提高电池效率。

公开(公告)号：WO2014179366A1

公开(公告)日：2014-11-06

申请号：PCT/US2014/035961

申请日：2014-04-29

Applicant: SOIEXEL, INC. ,  RANA, Virendra, V. ,  MOSLEHI, Mehrdad, M. ,  KAPUR, Pawan ,  BENJAMIN, Rattle ,  DESHAZER, Heather ,  COUTANT, Solene ,  KOMMERA, Swaroop

Inventor： RANA, Virendra, V. ,  MOSLEHI, Mehrdad, M. ,  KAPUR, Pawan ,  BENJAMIN, Rattle ,  DESHAZER, Heather ,  COUTANT, Solene ,  KOMMERA, Swaroop

IPC: H01L31/18 ,  H01L31/024 ,  H01L31/04

CPC classification number: H01L31/0682 ,  H01L21/268 ,  H01L21/324 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  Y02E10/547

Abstract: Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.

Abstract translation: 本文提供了使用辅助加热来退火激光损伤的烧蚀区域的提供无损伤激光图案的退火解决方案。 在覆盖的透明钝化层的脉冲激光烧蚀图案化期间或之后对底层半导体衬底上的消融点进行退火。

公开(公告)号：WO2014127067A1

公开(公告)日：2014-08-21

申请号：PCT/US2014/016140

申请日：2014-02-12

Applicant: SOLEXEL, INC. ,  MOSLEHI, Mehrdad, M. ,  KAPUR, Pawan ,  KRAMER, Karl-Josef ,  WINGERT, Michael

Inventor： MOSLEHI, Mehrdad, M. ,  KAPUR, Pawan ,  KRAMER, Karl-Josef ,  WINGERT, Michael

IPC: H01L31/04 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/0682 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell using bulk wafers is provided. Emitter and base contact regions are formed on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside. A first level contact metallization is formed on the wafer backside and an electrically insulating backplane is attached to the semiconductor wafer backside. Isolation trenches are formed in the semiconductor wafer patterning the semiconductor wafer into a plurality of electrically isolated isles and the semiconductor wafer is thinned. A metallization structure is formed on the electrically insulating backplane electrically connecting the plurality of isles.

Abstract translation: 根据所公开的主题的一个方面，提供了一种使用块状晶片形成单片背面接触背面太阳能电池的方法。 在具有光接收前侧和与前侧相对的背面的半导体晶片的背面上形成发射极和基极接触区域。 第一层接触金属化形成在晶片背面，并且电绝缘底板附着到半导体晶片背面。 在将半导体晶片图案化成多个电隔离岛的半导体晶片中形成隔离沟槽，并且半导体晶片变薄。 在电绝缘背板上形成电连接多个岛的金属化结构。

公开(公告)号：WO2014071417A2

公开(公告)日：2014-05-08

申请号：PCT/US2013/068599

申请日：2013-11-05

Applicant: SOLEXEL, INC. ,  MOSLEHI, Mehrdad, M.

Inventor： MOSLEHI, Mehrdad, M.

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/022458 ,  H01L31/02 ,  H01L31/0201 ,  H01L31/022433 ,  H01L31/02245 ,  H01L31/0443 ,  H01L31/0445 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/1896 ,  Y02B10/10 ,  Y02E10/50

Abstract: According to one aspect of the disclosed subject matter, a monolithically isled solar cell is provided. The solar cell comprises a semiconductor layer having a light receiving frontside and a backside opposite the frontside and attached to an electrically insulating backplane. A trench isolation pattern partitions the semiconductor layer into electrically isolated isles on the electrically insulating backplane. A first metal layer having base and emitter electrodes is positioned on the semiconductor layer backside. A patterned second metal layer providing cell interconnection and connected to the first metal layer by via plugs is positioned on the backplane.

Abstract translation: 根据所公开的主题的一个方面，提供了一种单片太阳能电池。 太阳能电池包括具有光接收前侧和与前侧相对的背面并附接到电绝缘背板的半导体层。 沟槽隔离图案将半导体层分隔成电绝缘背板上的电隔离岛。 具有基极和发射电极的第一金属层位于半导体层背面。 提供电池互连并通过插头连接到第一金属层的图案化的第二金属层位于背板上。

公开(公告)号：WO2013126033A3

公开(公告)日：2013-10-17

申请号：PCT/US2011059177

申请日：2011-11-03

Applicant: SOLEXEL INC ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  TAMILMANI SUBRAMANIAN ,  KAMIAN GEORGE ,  ASHJAEE JAY ,  YONEHARA TAKAO

Inventor： KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  TAMILMANI SUBRAMANIAN ,  KAMIAN GEORGE ,  ASHJAEE JAY ,  YONEHARA TAKAO

IPC: H01L21/3063 ,  H01L21/02 ,  H01L21/306

CPC classification number: B81C99/0025 ,  B81C2201/0115 ,  C25D11/005 ,  C25D11/32 ,  C25D17/001 ,  C25D17/06 ,  C25F3/12 ,  C25F7/00 ,  H01L21/306 ,  H01L31/0284 ,  H01L31/18

Abstract: This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

Abstract translation: 本公开使得能够高生产率控制制造均匀的多孔半导体层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙或多孔层）制成）。 一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。 此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。

公开(公告)号：WO2012162704A3

公开(公告)日：2013-03-28

申请号：PCT/US2012039891

申请日：2012-05-29

Applicant: SOLEXEL INC ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  ASHJAEE JAY ,  RANA VIRENDRA V ,  YOKOI SEIICHI ,  RICOLCOL RAFAEL

Inventor： KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  ASHJAEE JAY ,  RANA VIRENDRA V ,  YOKOI SEIICHI ,  RICOLCOL RAFAEL

IPC: H01L31/042 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

Abstract: The disclosed subject matter pertains to deposition of thin film or thin foil materials in general, but more specifically to deposition of epitaxial monocrystalline or quasi-monocrystalline silicon film (epi film) for use in manufacturing of high efficiency solar cells. In operation, methods are disclosed which extend the reusable life and to reduce the amortized cost of a reusable substrate or template used in the manufacturing process of silicon and other semiconductor solar cells.

Abstract translation: 所公开的主题一般涉及薄膜或薄箔材料的沉积，更具体地涉及用于制造高效率太阳能电池的外延单晶或准单晶硅膜（epi膜）的沉积。 在操作中，公开了延长可再利用寿命并降低在硅和其它半导体太阳能电池的制造过程中使用的可重复使用的基板或模板的摊销成本的方法。

公开(公告)号：WO2012166749A2

公开(公告)日：2012-12-06

申请号：PCT/US2012/039901

申请日：2012-05-29

Applicant: SOLEXEL, INC. ,  MOSLEHI, Mehrdad, M. ,  RANA, Virendra, V. ,  KAPUR, Pawan

Inventor： MOSLEHI, Mehrdad, M. ,  RANA, Virendra, V. ,  KAPUR, Pawan

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/02363 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/268 ,  H01L21/324 ,  H01L31/035281 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact back junction thin-film solar cell is formed on a thin-film semiconductor solar cell. Preferably the thin film semiconductor material comprises crystalline silicon. Emitter regions, selective emitter regions, and a back surface field are formed through ion implantation and annealing processes.

Abstract translation: 在薄膜半导体太阳能电池上形成背接触薄膜太阳能电池。 优选地，薄膜半导体材料包括晶体硅。 通过离子注入和退火工艺形成发射极区域，选择性发射极区域和背表面场。