Field emission display cell structure
    41.
    发明授权
    Field emission display cell structure 失效
    场发射显示单元结构

    公开(公告)号:US5644188A

    公开(公告)日:1997-07-01

    申请号:US438023

    申请日:1995-05-08

    CPC classification number: H01J21/04 H01J21/105 H01J3/022 H01J31/127 H01J9/025

    Abstract: A lateral-emitter field emission device has a thin-film emitter cathode 50 which has thickness of not more than several hundred angstroms and has an edge or tip 110 having a small radius of curvature. To form a novel display cell structure, a cathodoluminescent phosphor anode 60 is positioned below the plane of the thin-film lateral-emitter cathode 50, allowing a large portion of the phosphor anode's top surface to emit light in the desired direction. An anode contact layer contacts the phosphor anode 60 from below to form a buried anode contact 90 which does not interfere with light emission. The anode phosphor is precisely spaced apart from the cathode edge or tip and receives electrons emitted by field emission from the edge or tip of the lateral-emitter cathode, when a small bias voltage is applied. The device may be configured as a diode, triode, or tetrode, etc. having one or more control electrodes 140 and/or 170 positioned to allow control of current from the emitter to the phosphor anode by an electrical signal applied to the control electrode. In a particularly simple embodiment, a single control electrode 140 is positioned in a plane below the emitter edge or tip 110 and automatically aligned to that edge. The display cell structure may be repeated many times in an array, and the display cell structure of the invention lends itself to novel array structures which are also disclosed.

    Abstract translation: 横向发射极场发射器件具有薄膜发射极阴极50,薄膜发射极阴极50具有不超过几百埃的厚度,并具有具有小曲率半径的边缘或尖端110。 为了形成新颖的显示单元结构,阴极发光磷光体阳极60位于薄膜侧向发射极阴极50的平面的下方,允许荧光体阳极的顶表面的大部分在期望的方向上发光。 阳极接触层从下方接触荧光体阳极60,以形成不干扰光发射的掩埋阳极接触90。 当施加小的偏置电压时,阳极磷光体与阴极边缘或尖端精确地间隔开并且接收从侧向发射极阴极的边缘或尖端的场发射发射的电子。 该器件可以被配置为具有一个或多个控制电极140和/或170的二极管,三极管或四极管等,其被定位成允许通过施加到控制电极的电信号来控制从发射极到磷光体阳极的电流。 在特别简单的实施例中,单个控制电极140定位在发射器边缘或尖端110下方的平面中并自动对准该边缘。 显示单元结构可以在阵列中重复多次,并且本发明的显示单元结构本身也被公开了新颖的阵列结构。

    Fabrication process for direct electron injection field-emission display
device
    42.
    发明授权
    Fabrication process for direct electron injection field-emission display device 失效
    直接电子注入场致发射显示装置的制造工艺

    公开(公告)号:US5616061A

    公开(公告)日:1997-04-01

    申请号:US498507

    申请日:1995-07-05

    CPC classification number: H01J9/025 H01J31/127 H01J2201/30423 H01J2329/00

    Abstract: A lateral-emitter electron field-emission display device structure incorporates a thin-film emitter having an emitting edge and extending into in direct contact with a non-conducting or very high resistivity phosphor, thereby eliminating the gap between the emitter and the phosphor. Such a gap has been a part of all field-emission display devices in the prior art. The ultra-thin-film lateral emitter of the new structure is deposited in a plane parallel to the device's substrate and has an inherently small radius of curvature at its emitting edge. A fabrication process specially adapted to make the new structure includes a directional trench etch, which both defines the emitting edge and provides an opening to receive a non-conducting phosphor. This phosphor covers an anode and is automatically aligned in contact with the emitter edge. When an electrical bias voltage is applied between the emitter and anode, electrons are injected directly into the phosphor material from the emitter edge, exciting cathodoluminescence in the phosphor to emit light which is visible in a wide range of viewing angles. With minor variations in the fabrication process, a lateral-emitter electron field emission display device may be made with an extremely small emitter-phosphor gap, having a width less than 100 times the thickness of the ultra-thin emitter. Embodiments in which the gap width is zero are characterized as edge-contact light-emitting diodes (or triodes or tetrodes if they include control electrodes).

    Abstract translation: 横向发射极电子场发射显示器件结构包括具有发射边缘并延伸成与非导电或非常高电阻率的磷光体直接接触的薄膜发射器,从而消除了发射极和磷光体之间的间隙。 这样的间隙已经是现有技术中的所有场致发射显示装置的一部分。 新结构的超薄膜横向发射体沉积在平行于器件的衬底的平面中,并且在其发射边缘处具有固有的小的曲率半径。 专门用于制造新结构的制造工艺包括定向沟槽蚀刻,其定义了发射边缘并且提供用于接收非导电磷光体的开口。 该荧光体覆盖阳极并自动对准与发射极边缘接触。 当在发射极和阳极之间施加电偏压时,电子从发射极边缘直接注入到荧光体材料中,激发荧光体中的阴极发光,发射在宽视角范围内可见的光。 在制造工艺中有微小变化的情况下,横向发射极电子场发射显示装置可以制造成具有极小的发射 - 磷光体间隙,其宽度小于超薄发射极的厚度的100倍。 间隙宽度为零的实施例的特征在于边缘接触式发光二极管(或三极管或四极管,如果它们包括控制电极)。

    Microchannel Plate Devices With Multiple Emissive Layers
    43.
    发明申请
    Microchannel Plate Devices With Multiple Emissive Layers 有权
    具有多个发射层的微通道板装置

    公开(公告)号:US20090212680A1

    公开(公告)日:2009-08-27

    申请号:US12038254

    申请日:2008-02-27

    CPC classification number: H01J43/246

    Abstract: A microchannel plate includes a substrate defining a plurality of pores extending from a top surface of the substrate to a bottom surface of the substrate. The plurality of pores includes a resistive material on an outer surface that forms a first emissive layer. A second emissive layer is formed over the first emissive layer. The second emissive layer is chosen to achieve at least one of an increase in secondary electron emission efficiency and a decrease in gain degradation as a function of time. A top electrode is positioned on the top surface of the substrate and a bottom electrode is positioned on the bottom surface of the substrate.

    Abstract translation: 微通道板包括限定从衬底的顶表面延伸到衬底的底表面的多个孔的衬底。 多个孔包括形成第一发射层的外表面上的电阻材料。 在第一发射层上形成第二发射层。 选择第二发射层以实现二次电子发射效率的增加和随着时间的函数的增益降低的降低中的至少一个。 顶部电极位于衬底的顶表面上,底部电极位于衬底的底表面上。

    Storage optimization system and method
    44.
    发明授权
    Storage optimization system and method 有权
    存储优化系统及方法

    公开(公告)号:US07536283B2

    公开(公告)日:2009-05-19

    申请号:US10336290

    申请日:2003-01-03

    CPC classification number: G07F9/026 G06Q10/087

    Abstract: A system and method are provided by which items in an inventory can be arranged in a storage space based upon one or more factors such as item dimensions, weight, type, sorting codes, stackability, and the like. In some cases, the system and method generate multiple inventory arrangements from which a desired inventory arrangement can be selected, such as a highly efficient inventory arrangement.

    Abstract translation: 提供了一种系统和方法,通过其可以基于一个或多个因素(诸如项目尺寸,重量,类型,分类代码,可堆叠性等)将库存中的物品布置在存储空间中。 在某些情况下,系统和方法生成多个库存安排,从中可以选择所需的库存布置,例如高效的库存安排。

    Garage door panel mounting systems and methods thereof
    45.
    发明申请
    Garage door panel mounting systems and methods thereof 审中-公开
    车库门板安装系统及其方法

    公开(公告)号:US20080135699A1

    公开(公告)日:2008-06-12

    申请号:US11906610

    申请日:2007-10-03

    CPC classification number: E06C7/50 Y10T292/08

    Abstract: A storage system for use on a garage door includes at least one retaining device and at least one latching device. The retaining device is attached to one of two or more panels of a garage door and the latching device is spaced from the retaining device and is attached to one of an item to be detachably secured and the one of the two or more panels of the garage door. The latching device has at least an engaged position which detachably secures an item to the one of two or more panels of the garage door with the retaining device and a detached position which releases the item from the one of two or more panels of the garage door.

    Abstract translation: 用于车库门的存储系统包括至少一个保持装置和至少一个锁定装置。 保持装置连接到车库门的两个或更多个面板中的一个,并且锁定装置与保持装置间隔开并且附接到可拆卸地固定的物品之一,车库的两个或更多个板中的一个 门。 闩锁装置具有至少一个接合位置,该位置使用保持装置将物品可拆卸地固定在车库门的两个或更多个面板中的一个上,并且将分离位置从车库门的两个或更多个面板中的一个释放出来 。

    Method for non-damaging charge injection and a system thereof
    46.
    发明授权
    Method for non-damaging charge injection and a system thereof 有权
    无损电荷注入方法及其系统

    公开(公告)号:US07217582B2

    公开(公告)日:2007-05-15

    申请号:US10924611

    申请日:2004-08-24

    CPC classification number: H01L21/28176 H01J2237/316

    Abstract: A method and system for injecting charge includes providing a first material on a second material and injecting charge into the first material to trap charge at an interface between the first and second materials. The thickness of the first material is greater than a penetration depth of the injected charge in the first material.

    Abstract translation: 用于注入电荷的方法和系统包括在第二材料上提供第一材料并将电荷注入到第一材料中以在第一和第二材料之间的界面处收集电荷。 第一材料的厚度大于第一材料中注入的电荷的穿透深度。

    Electrostatic based power source and method thereof
    47.
    发明授权
    Electrostatic based power source and method thereof 失效
    静电式电源及其方法

    公开(公告)号:US06750590B2

    公开(公告)日:2004-06-15

    申请号:US10280304

    申请日:2002-10-24

    CPC classification number: H02N1/08

    Abstract: A power system includes a housing with a chamber, a member with a stored static electrical charge, and a pair of electrodes. The member is connected to the housing and extends at least partially across the chamber. The electrodes are connected to the housing, are spaced from and on substantially opposing sides of the member from each other, and are at least partially in alignment with each other. The member is movable with respect to the pair of electrodes or one of the pair of electrodes is movable with respect to the member.

    Abstract translation: 电力系统包括具有室的壳体,具有存储的静电荷的构件和一对电极。 该构件连接到壳体并且至少部分地延伸穿过该腔室。 电极连接到壳体,与构件彼此间隔开并基本相对的两侧,并且至少部分地彼此对准。 该构件可相对于一对电极移动,或者该对电极中的一个可相对于构件移动。

    Method for electrostatic force bonding and a system thereof

    公开(公告)号:US06638627B2

    公开(公告)日:2003-10-28

    申请号:US10016782

    申请日:2001-12-10

    CPC classification number: B81C3/002 Y10T156/10 Y10T428/31692

    Abstract: A method for electrostatic bonding includes placing a first region of a first unit at least adjacent to a first region of a second unit. The first region of the first unit has trapped charge. A bond between the first region of the first unit and the first region of the second unit is formed by the electrostatic forces between the trapped charge and induced charge in the first region of the second unit. A system for electrostatic bonding includes a first unit having a first region with trapped charge and a second unit with a first region with induced charge. Electrostatic forces between the trapped charge in the first region of the first unit and the induced charge in the first region of the second unit bond the first and second units together.

    Compositions of highly-purified natural mixtures of type I Interferon derived from leukocytes and methods
    49.
    发明授权
    Compositions of highly-purified natural mixtures of type I Interferon derived from leukocytes and methods 失效
    来自白细胞的I型干扰素的高度纯化天然混合物的组合物和方法

    公开(公告)号:US06433144B1

    公开(公告)日:2002-08-13

    申请号:US09229039

    申请日:1999-01-12

    CPC classification number: C07K14/56 A61K38/00

    Abstract: This invention relates to methods for isolating highly purified mixtures of natural Type I interferon from white blood cells. The invention also relates to highly-purified mixtures of Type I interferon which resemble natural Type I interferon in that the highly purified mixtures of natural Type I interferon includes at least 9 subtypes, i.e., alpha-1, alpha-2, alpha-5, alpha-7, alpha-8, alpha-10, alpha-14, alpha-21 and omega, giving rise to at least 16, and possibly 20 or more molecular species, including alpha-1a, alpha-1new, alpha-2a, alpha-2b, alpha-2c, alpha-5, alpha-5LG, alpha-7, alpha-8a, alpha-8c, alpha-10a, alpha-14a, alphal4-b, alpha 14-c, alpha-14LG, alpha-21a, alpha-21b, alpha-21c, omega and omega LG.

    Abstract translation: 本发明涉及从白细胞中分离出高度纯化的天然I型干扰素混合物的方法。 本发明还涉及类似于天然I型干扰素的I型干扰素的高度纯化的混合物,因为天然I型干扰素的高度纯化的混合物包括至少9种亚型,即α-1,α-2,α-5, α-7,α-8,α-10,α-14,α-21和ω,产生至少16种,并且可能有20种或更多种分子物质,包括α-1a,α-1新,α-2a, α-2b,α-2c,α-5,α-5LG,α-7,α-8a,α-8c,α-10a,α-14a,alphal4-b,α14-c,α-14LG, -21a,α-21b,α-21c,ω和ωLG。

    Field emission display cell structure
    50.
    发明授权
    Field emission display cell structure 失效
    场发射显示单元结构

    公开(公告)号:US6037708A

    公开(公告)日:2000-03-14

    申请号:US263636

    申请日:1999-03-05

    CPC classification number: H01J21/04 H01J21/105 H01J3/022 H01J31/127 H01J9/025

    Abstract: A lateral-emitter field emission device has a thin-film emitter cathode 50 which has thickness of not more than several hundred angstroms and has an edge or tip 110 having a small radius of curvature. To form a novel display cell structure, a cathodoluminescent phosphor anode 60 is positioned below the plane of the thin-film lateral-emitter cathode 50, allowing a large portion of the phosphor anode's top surface to emit light in the desired direction. An anode contact layer contacts the phosphor anode 60 from below to form a buried anode contact 90 which does not interfere with light emission. The anode phosphor is precisely spaced apart from the cathode edge or tip and receives electrons emitted by field emission from the edge or tip of the lateral-emitter cathode, when a small bias voltage is applied. The device may be configured as a diode, triode, or tetrode, etc. having one or more control electrodes 140 and/or 170 positioned to allow control of current from the emitter to the phosphor anode by an electrical signal applied to the control electrode. In a particularly simple embodiment, a single control electrode 140 is positioned in a plane below the emitter edge or tip 110 and automatically aligned to that edge. The display cell structure may be repeated many times in an array, and the display cell structure of the invention lends itself to novel array structures which are also disclosed. A fabrication process is disclosed using subprocess steps S1-S19 similar to those of semiconductor integrated circuit fabrication to produce the novel display cell structures and their arrays. Various embodiments of the fabrication process allow the use of conductive or insulating substrates 20 and allow fabrication of devices having various functions and complexity.

    Abstract translation: 横向发射极场发射器件具有薄膜发射极阴极50,薄膜发射极阴极50具有不超过几百埃的厚度,并具有具有小曲率半径的边缘或尖端110。 为了形成新颖的显示单元结构,阴极发光磷光体阳极60位于薄膜侧向发射极阴极50的平面的下方,允许荧光体阳极的顶表面的大部分在期望的方向上发光。 阳极接触层从下方接触荧光体阳极60,以形成不干扰光发射的掩埋阳极接触90。 当施加小的偏置电压时,阳极磷光体与阴极边缘或尖端精确地间隔开并且接收从侧向发射极阴极的边缘或尖端的场发射发射的电子。 该器件可以被配置为具有一个或多个控制电极140和/或170的二极管,三极管或四极管等,其被定位成允许通过施加到控制电极的电信号来控制从发射极到磷光体阳极的电流。 在特别简单的实施例中,单个控制电极140定位在发射器边缘或尖端110下方的平面中并自动对准该边缘。 显示单元结构可以在阵列中重复多次,并且本发明的显示单元结构本身也被公开了新颖的阵列结构。 使用类似于半导体集成电路制造的子过程步骤S1-S19来公开制造工艺以产生新的显示单元结构及其阵列。 制造工艺的各种实施例允许使用导电或绝缘基板20并且允许制造具有各种功能和复杂性的装置。

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