Abstract:
Submicron powders of metal silicon nitrides and metal silicon oxynitrides are synthesized using nanoscale particles of one or more precursor materials using a solid state reaction. For example, nanoscale powders of silicon nitride are useful precursor powders for the synthesis of metal silicon nitride and metal silicon oxynitride submicron powders. Due to the use of the nanoscale precursor materials for the synthesis of the submicron phosphor powders, the product phosphors can have very high internal quantum efficiencies. The phosphor powders can comprise a suitable dopant activator, such as a rare earth metal element dopant.
Abstract:
Successful dispersion approaches are described for the formation of dispersion of dry powders of inorganic particles. In some embodiments, it is desirable to form the dispersion in two processing steps in which the particles are surface modified in the second processing step. Composites can be formed using the well dispersed particles to form improved inorganic particle-polymer composites. These composites are suitable for optical applications and for forming transparent films, which can have a relatively high index or refraction. In some embodiments, water can be used to alter the surface chemistry of metal oxide particles.
Abstract:
High rate deposition methods comprise depositing a powder coating from a product flow. The product flow results from a chemical reaction within the flow. Some of the powder coatings consolidate under appropriate conditions into an optical coating. The substrate can have a first optical coating onto which the powder coating is placed. The resulting optical coating following consolidation can have a large index-of-refraction difference with the underlying first optical coating, high thickness and index-of-refraction uniformity across the substrate and high thickness and index-of-refraction uniformity between coatings formed on different substrates under equivalent conditions. In some embodiments, the deposition can result in a powder coating of at least about 100 nm in no more than about 30 minutes with a substrate having a surface area of at least about 25 square centimeters.
Abstract:
Photovoltaic modules comprise solar cells having doped domains of opposite polarities along the rear side of the cells. The doped domains can be located within openings through a dielectric passivation layer. In some embodiments, the solar cells are formed from thin silicon foils. Doped domains can be formed by printing inks along the rear surface of the semiconducting sheets. The dopant inks can comprise nanoparticles having the desired dopant.
Abstract:
The use of doped silicon nanoparticle inks and other liquid dopant sources can provide suitable dopant sources for driving dopant elements into a crystalline silicon substrate using a thermal process if a suitable cap is provided. Suitable caps include, for example, a capping slab, a cover that may or may not rest on the surface of the substrate and a cover layer. Desirable dopant profiled can be achieved. The doped nanoparticles can be delivered using a silicon ink. The residual silicon ink can be removed after the dopant drive-in or at least partially densified into a silicon material that is incorporated into the product device. The silicon doping is suitable for the introduction of dopants into crystalline silicon for the formation of solar cells.
Abstract:
Silicon nanoparticle inks provide a basis for the formation of desirable materials. Specifically, composites have been formed in thin layers comprising silicon nanoparticles embedded in an amorphous silicon matrix, which can be formed at relatively low temperatures. The composite material can be heated to form a nanocrystalline material having crystals that are non-rod shaped. The nanocrystalline material can have desirable electrical conductive properties, and the materials can be formed with a high dopant level. Also, nanocrystalline silicon pellets can be formed from silicon nanoparticles deposited form an ink in which the pellets can be relatively dense although less dense than bulk silicon. The pellets can be formed from the application of pressure and heat to a silicon nanoparticle layer. The materials described herein can be effectively used for the formation of doped contacts for crystalline silicon solar cells, thin film silicon solar cells, electronic devices, such as printed electronics, and other useful products.