公开(公告)号：US20190272990A1

公开(公告)日：2019-09-05

申请号：US16284333

申请日：2019-02-25

Applicant: SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Hajime FUJIKURA

IPC: H01L21/02 ,  H01L29/20

Abstract: To provide a new GaN laminate obtained by growing a GaN layer on a GaN substrate by HVPE, including: a GaN substrate containing GaN single crystal and having a low index crystal plane as c-plane closest to a main surface; and a GaN layer epitaxially grown on the main surface of the GaN substrate, and having a thickness of 10 nm or more, wherein a surface of the GaN layer has a step-terrace structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a predetermined direction and a terrace are alternately arranged.

公开(公告)号：US10325793B2

公开(公告)日：2019-06-18

申请号：US15600937

申请日：2017-05-22

Applicant: SCIOCS COMPANY LIMITED

Inventor： Masahiro Hayashi ,  Chiharu Kimura

IPC: H01L21/673 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  C30B29/38 ,  C30B29/64 ,  H01L33/00 ,  H01L33/16

Abstract: A method for producing a crystal substrate includes preparing, measuring, holding, and machining. The preparing prepares a crystal substrate body including a curved crystal lattice plane. The measuring measures a shape feature of the crystal lattice plane. The holding holds the crystal substrate body in a warped state in accordance with the shape feature measured by the measuring, to more flatten the crystal lattice plane than the crystal lattice plane at the preparing. The machining machines a surface of the crystal substrate body held in the warped state, to flatten the surface.

公开(公告)号：US20180301618A1

公开(公告)日：2018-10-18

申请号：US15767677

申请日：2016-10-11

Applicant: SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Kenji Shibata ,  Kazutoshi Watanabe ,  Fumimasa Horikiri

IPC: H01L41/18 ,  B41J2/14 ,  H03H9/02 ,  H01L41/318

Abstract: There is provided a laminated substrate with a piezoelectric thin film, comprising: a substrate; an electrode film formed on the substrate; and a piezoelectric thin film formed on the electrode film, wherein the piezoelectric thin film is made of an alkali niobium oxide represented by a composition formula of (K1−xNax) NbO 3 (0

公开(公告)号：US20180261667A1

公开(公告)日：2018-09-13

申请号：US15754784

申请日：2016-08-23

Applicant: HOSEI UNIVERSITY ,  SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Tohru NAKAMURA ,  Tomoyoshi MISHIMA ,  Hiroshi OHTA ,  Yasuhiro YAMAMOTO ,  Fumimasa HORIKIRI

IPC: H01L29/06 ,  H01L29/861 ,  H01L29/20

CPC classification number: H01L29/0661 ,  H01L23/29 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/3192 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66204 ,  H01L29/8613

Abstract: There is provided a semiconductor device, including: a semiconductor member having a mesa structure in which a second semiconductor layer having one of a p-type conductivity type and an n-type conductivity type is laminated on a first semiconductor layer having the other one of the p-type conductivity type and the n-type conductivity type, so that the second semiconductor layer is exposed on an upper surface of the mesa structure, a pn junction interface is exposed on a side surface of the mesa structure, and the first semiconductor layer is exposed on an outside upper surface of the mesa structure; an insulating film disposed on a side surface of the mesa structure and on an outside upper surface of the mesa structure; a first electrode electrically connected to the second semiconductor layer on the upper surface of the mesa structure, and extends on the side surface of the mesa structure and on the outside upper surface of the mesa structure on the insulating film; and a second electrode electrically connected to the first semiconductor layer on a lower surface of the first semiconductor layer, wherein the insulating film is constituted including a first insulating layer and a second insulating layer, the first insulating layer is disposed so as to cover a corner portion where the side surface of the mesa structure and the outside upper surface of the mesa structure are connected to each other, the second insulating layer is disposed so as to cover the pn junction interface exposed on the side surface of the mesa structure, or is disposed to constitute an entire thickness of the insulating film directly under the electrode end of the first electrode so as to cover the area directly under the electrode end, the relative dielectric constant of the second insulating layer is equal to or larger than the relative dielectric constant of the semiconductor member, and the relative dielectric constant of the first insulating layer is smaller than the relative dielectric constant of the second insulating layer.

公开(公告)号：US20180114692A1

公开(公告)日：2018-04-26

申请号：US15789659

申请日：2017-10-20

Applicant: SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Toshio KITAMURA ,  Masatomo SHIBATA ,  Takehiro YOSHIDA

IPC: H01L21/02 ,  H01L21/66 ,  C30B29/40 ,  C30B25/20 ,  B23K26/382

CPC classification number: H01L21/02032 ,  B23K26/0006 ,  B23K26/352 ,  B23K26/382 ,  B23K26/402 ,  B23K2101/40 ,  C30B25/20 ,  C30B29/406 ,  C30B33/04 ,  H01L22/20

Abstract: There is provided a method for manufacturing a group-III nitride substrate, including: (a) preparing a substrate which is made of a group III-nitride crystal and which has a high oxygen concentration domain where an oxygen concentration is higher than that of a matrix of the crystal; (b) irradiating the substrate with laser beam aiming at the high oxygen concentration domain, forming a through-hole penetrating the substrate in a thickness direction, and removing at least a part of the high oxygen concentration domain from the substrate; and (c) embedding at least a part of an inside of the through-hole by growing the group-III nitride crystal in the through-hole.

公开(公告)号：US20170314157A1

公开(公告)日：2017-11-02

申请号：US15584756

申请日：2017-05-02

Applicant: OSAKA UNIVERSITY ,  SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Mamoru IMADE ,  Masayuki IMANISHI ,  Masatomo SHIBATA ,  Takehiro YOSHIDA

IPC: C30B25/02 ,  C30B29/40

CPC classification number: C30B25/02 ,  C30B25/20 ,  C30B29/406

Abstract: A high-quality nitride crystal substrate is manufactured, using a substrate for crystal growth with its diameter enlarged, the nitride crystal substrate including: a first step of preparing a substrate for crystal growth having a plurality of seed crystal substrates made of nitride crystals, arranged in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other, and a difference of a lattice constant between adjacent seed crystal substrates arbitrarily selected from a plurality of the seed crystal substrates is within 7×10−5 Å; and a second step of growing a crystal film on a ground surface belonging to the substrate for crystal growth.

公开(公告)号：US20160148817A1

公开(公告)日：2016-05-26

申请号：US15012459

申请日：2016-02-01

Applicant: SCIOCS Company Limited

Inventor： Shunsuke YAMAMOTO

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/66 ,  G01N23/225 ,  H01L33/00 ,  H01L29/20 ,  H01S5/02 ,  C01B21/06 ,  H01S5/323

CPC classification number: H01L21/30625 ,  C01B21/0632 ,  C30B25/00 ,  C30B29/406 ,  G01N23/2252 ,  H01L21/02057 ,  H01L21/30612 ,  H01L22/12 ,  H01L29/2003 ,  H01L33/0075 ,  H01L33/32 ,  H01S5/0206 ,  H01S5/32341

Abstract: A method of processing a gallium nitride substrate, includes providing a gallium nitride substrate, polishing a surface of the gallium nitride substrate, and cleaning the polished surface of the gallium nitride substrate. The polished surface includes a GaLα/CKα peak intensity ratio in energy dispersive X-ray microanalysis (EDX) spectrum which is not less than 2, the EDX spectrum being obtained in an EDX of the surface of the gallium nitride substrate using a scanning electron microscope (SEM) at an accelerating voltage of 3 kV.

Abstract translation: 一种处理氮化镓衬底的方法，包括提供氮化镓衬底，抛光氮化镓衬底的表面，以及清洗氮化镓衬底的抛光表面。 抛光表面包括不小于2的能量色散X射线微量分析（EDX）光谱中的GaLα/CKα峰强度比，EDX光谱是使用扫描电子显微镜在氮化镓衬底的表面的EDX中获得的 （SEM），加速电压为3kV。

公开(公告)号：US20220270887A1

公开(公告)日：2022-08-25

申请号：US17629157

申请日：2020-07-06

Applicant: SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Fumimasa HORIKIRI ,  Noboru FUKUHARA

IPC: H01L21/3063 ,  H01L21/306

Abstract: There is provided a method for manufacturing a structure, including:
applying a first etching to a surface of a member, at least the surface being composed of Group III nitride; and applying a second etching to the surface to which the first etching has been applied, wherein in applying the first etching, a flat portion and a protruding portion are formed, the flat portion being newly appeared on the surface by etching, and the protruding portion being raised with respect to the flat portion, which is caused by being less likely to be etched than the flat portion, and in applying the second etching, the protruding portion is lowered by etching the protruding portion.

公开(公告)号：US11342220B2

公开(公告)日：2022-05-24

申请号：US17311887

申请日：2019-12-06

Applicant: SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Fumimasa Horikiri ,  Noboru Fukuhara

IPC: H01L21/768 ,  H01L21/308 ,  H01L21/02

Abstract: There is provided a structure manufacturing method, including: preparing a wafer at least whose surface comprises Group III nitride crystal in a state of being immersed in an etching solution containing peroxodisulfate ions; and irradiating the surface of the wafer with light through the etching solution; wherein the group III nitride crystal has a composition in which a wavelength corresponding to a band gap is 310 nm or more, and during irradiation of the light, the surface of the wafer is irradiated with a first light having a wavelength of 200 nm or more and less than 310 nm under a first irradiation condition, and is irradiated with a second light having a wavelength of 310 nm or more and less than a wavelength corresponding to the band gap under a second irradiation condition controlled independently of the first irradiation condition.

公开(公告)号：US11339500B2

公开(公告)日：2022-05-24

申请号：US16617802

申请日：2018-04-19

Applicant: SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Fumimasa Horikiri ,  Takehiro Yoshida

IPC: C30B29/38 ,  C30B25/20 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32

Abstract: There is provided a nitride crystal substrate comprising group-III nitride crystal and containing n-type impurities, wherein an absorption coefficient α is approximately expressed by equation (1) in a wavelength range of at least 1 μm or more and 3.3 μm or less: α=n Kλa (1) (wherein, λ(μm) is a wavelength, α(cm−1) is absorption coefficient of the nitride crystal substrate at 27° C., n (cm−3) is a free electron concentration in the nitride crystal substrate, and K and a are constants, satisfying 1.5×10−19≤K≤6.0×10−19, a=3).