Abstract:
A gardening box is disclosed. The gardening box may include a main body having a receiving space; a separation board having a plurality of through holes to secure water absorbing units and dividing said receiving space into an upper space and a bottom space; a plurality of observing holes located at a lower portion outside the main body; and a plurality of water absorbing unit secured at the separation board, and a lower portion of the water absorbing unit exposes at the bottom space to absorb water from the bottom space to moisturize soil and plants thereabove. Water level can be observed from the observing holes because the water level of the bottom space is identical to the observing holes according to the law of communicating vases.
Abstract:
Methods for non-random loading of single analyte molecules into array structures are provided. The methods allow for distribution of a population of target molecules into a plurality of size confined regions such as wells. Sizing moieties are linked to individual target molecules. The sizing moieties are of sufficient size, relative to the size-confined reaction or observation regions, such that only a selected number of sizing moieties will fit into the size confined regions. The confined regions and the sizing moieties or target molecules comprise a selected charge that allow for controlling the loading of the sizing moities.
Abstract:
A network device provides services for multiple virtual private networks (VPNs) via one or more virtual hosts. For example, a router receives packets from multiple VPNs, and communicates the packets to a service card via a logical interface in accordance with a forwarding information base. A virtual host within the service card processes the packets and provides a service for the network device from which the packet was sent. The virtual host may, for example, provide print services for network devices within a corresponding VPN. The virtual host acts, in essence, as a print server within the corresponding VPN. In this manner, the router may eliminate the need for the customer associated with the VPN to maintain print servers within remote customer sites.
Abstract:
A router receives destination address information for a packet and determines, among entries in a first forwarding table, a closest match for the received destination address information. The router receives a pointer to a second forwarding table in accordance with the closest match determined in the first forwarding table and determines, among entries in the second forwarding table, a closest match for the received destination address information.
Abstract:
Provided is a method for processing a wafer that includes providing an alloy susceptor including an exterior surface and a wafer contact surface. The exterior surface of the alloy susceptor is treated to produce a roughness of the exterior surface. The roughened exterior surface of is coated with a ceramic material. The alloy susceptor including the ceramic-coated roughened exterior surface is positioned in a wafer process chamber. A plurality of layers of a film are deposited on the ceramic-coated roughened exterior surface of the alloy susceptor, wherein a first adhesion exists between the plurality of layers of the film and the ceramic material coated on the roughened exterior surface of the alloy susceptor that is greater than a second adhesion that would exist between the plurality of layers of the film and a non-roughened exterior surface of the alloy susceptor without the ceramic material.
Abstract:
Examples of networking hardware with network layout maps thereon are disclosed herein. Other examples, embodiments, and related methods are also described herein.
Abstract:
An apparatus and method for preventing the peeling of electroplated metal from a wafer, is disclosed. The apparatus includes a seed layer detector system having a light source and a reflectivity detector. According to the method, the light source emits a beam of light onto a wafer and the reflectivity detector receives the light reflected from the wafer. The reflectivity of the wafer surface is measured to determine the presence or absence of a seed layer on the wafer, as well as whether the seed layer has a minimum thickness for optimum electroplating of a metal onto the seed layer.
Abstract:
A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm2 current density and second deposition step at a 60 mA/cm2 current density is used to deposit a second copper layer that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.
Abstract translation:描述了在双镶嵌方案中形成铜互连的方法。 在扩散阻挡层和种子层依次形成在电介质层中的沟槽和通孔的侧壁和底部上之后,通过第一ECP工艺以10mA / cm 2 / >电流密度以填充通孔和部分沟槽。 进行第一退火步骤以除去碳杂质,并且任选地包括H 2 O 3等离子体处理。 使用在40mA / cm 2电流密度下的第一沉积步骤和以60mA / cm 2电流密度进行第二沉积步骤的第二个ECP工艺来沉积 第二铜层超过沟槽。 在第二退火步骤之后,CMP工艺使铜层平坦化。 通过该方法可以实现更少的铜缺陷,降低的S,Cl和C杂质,以及Rc性能的提高。
Abstract:
An apparatus and method for preventing the peeling of electroplated metal from a wafer, is disclosed. The apparatus includes a seed layer detector system having a light source and a reflectivity detector. According to the method, the light source emits a beam of light onto a wafer and the reflectivity detector receives the light reflected from the wafer. The reflectivity of the wafer surface is measured to determine the presence or absence of a seed layer on the wafer, as well as whether the seed layer has a minimum thickness for optimum electroplating of a metal onto the seed layer.
Abstract:
A method of forming a metal layer with reduced defects comprising providing a structure having a dielectric layer formed over it, forming a dielectric layer having an opening, lining the opening with a metal seed layer, treating the metal seed layer with a cleaning process to remove contaminates from it, and forming a metal layer upon the metal seed layer.