GARDENING BOX
    41.
    发明申请
    GARDENING BOX 审中-公开
    园艺盒

    公开(公告)号:US20150052808A1

    公开(公告)日:2015-02-26

    申请号:US14010318

    申请日:2013-08-26

    CPC classification number: A01G27/06

    Abstract: A gardening box is disclosed. The gardening box may include a main body having a receiving space; a separation board having a plurality of through holes to secure water absorbing units and dividing said receiving space into an upper space and a bottom space; a plurality of observing holes located at a lower portion outside the main body; and a plurality of water absorbing unit secured at the separation board, and a lower portion of the water absorbing unit exposes at the bottom space to absorb water from the bottom space to moisturize soil and plants thereabove. Water level can be observed from the observing holes because the water level of the bottom space is identical to the observing holes according to the law of communicating vases.

    Abstract translation: 公开了园艺盒。 园艺盒可以包括具有容纳空间的主体; 分离板,具有多个通孔以固定吸水单元,并将所述容纳空间分成上部空间和底部空间; 多个观察孔,位于主体外部的下部; 以及多个吸水单元,其固定在分离板上,并且吸水单元的下部在底部空间处露出,以从底部空间吸收水分,从而对其上方的土壤和植物进行滋润。 水位可以从观察孔观察到,因为根据连通花瓶的规律,底部空间的水位与观察孔相同。

    Providing services for multiple virtual private networks
    43.
    发明授权
    Providing services for multiple virtual private networks 有权
    为多个虚拟专用网提供服务

    公开(公告)号:US07853714B1

    公开(公告)日:2010-12-14

    申请号:US11699721

    申请日:2007-01-29

    CPC classification number: H04L45/60 H04L12/4675 H04L45/04

    Abstract: A network device provides services for multiple virtual private networks (VPNs) via one or more virtual hosts. For example, a router receives packets from multiple VPNs, and communicates the packets to a service card via a logical interface in accordance with a forwarding information base. A virtual host within the service card processes the packets and provides a service for the network device from which the packet was sent. The virtual host may, for example, provide print services for network devices within a corresponding VPN. The virtual host acts, in essence, as a print server within the corresponding VPN. In this manner, the router may eliminate the need for the customer associated with the VPN to maintain print servers within remote customer sites.

    Abstract translation: 网络设备通过一个或多个虚拟主机为多个虚拟专用网络(VPN)提供服务。 例如,路由器从多个VPN接收数据包,并根据转发信息库通过逻辑接口将数据包传送到服务卡。 服务卡内的虚拟主机处理数据包,并为发送数据包的网络设备提供服务。 虚拟主机可以例如为对应的VPN内的网络设备提供打印服务。 虚拟主机本质上作为相应VPN内的打印服务器。 以这种方式,路由器可以消除对与VPN相关联的客户的需求,以维护远程客户站点内的打印服务器。

    NEXTHOP TO A FORWARDING TABLE
    44.
    发明申请
    NEXTHOP TO A FORWARDING TABLE 审中-公开
    NEXTHOP到前进表

    公开(公告)号:US20100284407A1

    公开(公告)日:2010-11-11

    申请号:US12842210

    申请日:2010-07-23

    CPC classification number: H04L45/742 H04L45/04 H04L45/54

    Abstract: A router receives destination address information for a packet and determines, among entries in a first forwarding table, a closest match for the received destination address information. The router receives a pointer to a second forwarding table in accordance with the closest match determined in the first forwarding table and determines, among entries in the second forwarding table, a closest match for the received destination address information.

    Abstract translation: 路由器接收分组的目的地地址信息,并且在第一转发表中的条目中确定所接收的目的地地址信息的最接近的匹配。 路由器根据在第一转发表中确定的最接近的匹配接收指向第二转发表的指针,并在第二转发表中的条目中确定接收到的目的地地址信息的最接近的匹配。

    ALLOY SUSCEPTOR WITH IMPROVED PROPERTIES FOR FILM DEPOSITION
    45.
    发明申请
    ALLOY SUSCEPTOR WITH IMPROVED PROPERTIES FOR FILM DEPOSITION 有权
    具有改善薄膜沉积性能的合金SUSCEPTOR

    公开(公告)号:US20100247773A1

    公开(公告)日:2010-09-30

    申请号:US12412186

    申请日:2009-03-26

    CPC classification number: H01L21/68757 C23C16/4581

    Abstract: Provided is a method for processing a wafer that includes providing an alloy susceptor including an exterior surface and a wafer contact surface. The exterior surface of the alloy susceptor is treated to produce a roughness of the exterior surface. The roughened exterior surface of is coated with a ceramic material. The alloy susceptor including the ceramic-coated roughened exterior surface is positioned in a wafer process chamber. A plurality of layers of a film are deposited on the ceramic-coated roughened exterior surface of the alloy susceptor, wherein a first adhesion exists between the plurality of layers of the film and the ceramic material coated on the roughened exterior surface of the alloy susceptor that is greater than a second adhesion that would exist between the plurality of layers of the film and a non-roughened exterior surface of the alloy susceptor without the ceramic material.

    Abstract translation: 提供一种处理晶片的方法,其包括提供包括外表面和晶片接触表面的合金基座。 处理合金基座的外表面以产生外表面的粗糙度。 粗糙的外表面涂有陶瓷材料。 包括陶瓷涂覆的粗糙外表面的合金感受器位于晶片处理室中。 多层膜沉积在合金感受体的陶瓷涂覆的粗糙化的外表面上,其中在多层薄膜和涂覆在合金感受体粗糙化的外表面上的陶瓷材料之间存在第一粘附, 大于在该多层薄膜和不具有陶瓷材料的合金基座的非粗糙化外表面之间将存在的第二粘合。

    Post ECP multi-step anneal/H2 treatment to reduce film impurity
    48.
    发明授权
    Post ECP multi-step anneal/H2 treatment to reduce film impurity 有权
    后期ECP多步退火/ H2处理以降低膜杂质

    公开(公告)号:US07432192B2

    公开(公告)日:2008-10-07

    申请号:US11347946

    申请日:2006-02-06

    CPC classification number: H01L21/76877 H01L21/2885

    Abstract: A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm2 current density and second deposition step at a 60 mA/cm2 current density is used to deposit a second copper layer that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.

    Abstract translation: 描述了在双镶嵌方案中形成铜互连的方法。 在扩散阻挡层和种子层依次形成在电介质层中的沟槽和通孔的侧壁和底部上之后,通过第一ECP工艺以10mA / cm 2 / >电流密度以填充通孔和部分沟槽。 进行第一退火步骤以除去碳杂质,并且任选地包括H 2 O 3等离子体处理。 使用在40mA / cm 2电流密度下的第一沉积步骤和以60mA / cm 2电流密度进行第二沉积步骤的第二个ECP工艺来沉积 第二铜层超过沟槽。 在第二退火步骤之后,CMP工艺使铜层平坦化。 通过该方法可以实现更少的铜缺陷,降低的S,Cl和C杂质,以及Rc性能的提高。

Patent Agency Ranking