Abstract:
The present invention provides a use of a growth factors-enriched dry powder for relieving inflammation or injury, wherein each gram of the growth factors-enriched dry powder comprises more than or equal to 9×104 pg of PDGF-BB.
Abstract:
A route for a data unit through a network may be defined based on a number of next hops. Exemplary embodiments described herein may implement a router forwarding table as a chained list of references to next hops. In one implementation, a device includes a forwarding table that includes: a first table configured to store, for each of a plurality of routes for data units in a network, a chain of links to next hops for the routes; and a second table configured to store the next hops. The device also includes a forwarding engine configured to assemble the next hops for the data units based on using the chain of links in the first table to retrieve the next hops in the second table and to forward the data units in the network based on the assembled next hops.
Abstract:
A router receives a packet at an ingress interface. The router classifies the received packet based on at least a first field value contained in the header of the packet. According to the classification of the received packet, the router associates one of the plurality of forwarding tables to the packet. The router then performs a lookup operation in the associated forwarding table according to at least a second field value contained in the header of the packet. Based on the lookup operation, the router determines an egress interface and transmits the received packet from the determined egress interface.
Abstract:
Systems and methods consistent with the present invention enable routing table updates are performed by optimally utilizing the resources of a node without exceeding the resources of the node. Using feedback on the amount of resources available to the nodes, such as in terms of available memory, the node may make new connections before breaking old one where those updates will not exceed available resources. This is referred to as make-before-break. When not enough resources are available, the node will break old connections before making new ones. This is referred to as break-before-make. Unlike the strict make-before-break and break-before-make models, this “loose” make-before-break method considers the amount of available resources in view of the resources required to perform the routing table updates without a node failure. Routes may also be tagged to prioritize the addition of more important routes and the deletion of less significant routes. Methods and systems consistent with the present invention, therefore, provide a routing table update method with which routing table updates are achieved without crashing and at the same time minimizing black hole intervals.
Abstract:
A device includes a primary control unit and a standby control unit. The standby control unit records routing communications exchanged between the primary control unit and an external routing device in accordance with a routing protocol. A standby routing process executing on the standby control unit processes the recorded routing communications when the primary control unit fails. The standby routing process generates state information for executing the routing protocol on the standby control unit without requiring that routing sessions be reestablished with the external routing device.
Abstract:
A method of forming a copper interconnect in an opening within a pattern is described. The copper interconnect has an Rs that is nearly independent of opening width and pattern density. A first copper layer having a concave upper surface and thickness t1 is formed in a via or trench in a dielectric layer by depositing copper and performing a first CMP step. A second copper layer with a thickness t2 where t2≦t1 and having a convex lower surface is deposited on the first copper layer by a selective electroplating method. The first and second copper layers are annealed and then a second CMP step planarizes the second copper layer to become coplanar with the dielectric layer. The invention is also a copper interconnect comprised of the aforementioned copper layers where the first copper layer has a grain density (GD1)≧GD2 for the second copper layer.
Abstract translation:描述了在图案内的开口中形成铜互连的方法。 铜互连具有几乎独立于开口宽度和图案密度的Rs。 通过沉积铜并执行第一CMP步骤,在电介质层中的通孔或沟槽中形成具有凹上表面和厚度t 1的第一铜层。 具有厚度为2 sub>的第二铜层,其中具有凸下表面的第二铜层沉积在第一铜层上 通过选择性电镀方法。 对第一和第二铜层进行退火,然后第二CMP步骤将第二铜层平坦化成与电介质层共面。 本发明也是由上述铜层构成的铜布线,其中第一铜层具有第二铜层的晶粒密度(G SUB D1)= G D2 D2。
Abstract:
A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm2 current density and second deposition step at a 60 mA/cm2 current density is used to deposit a second copper layer that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.
Abstract translation:描述了在双镶嵌方案中形成铜互连的方法。 在扩散阻挡层和种子层依次形成在电介质层中的沟槽和通孔的侧壁和底部上之后,通过第一ECP工艺以10mA / cm 2 / >电流密度以填充通孔和部分沟槽。 进行第一退火步骤以除去碳杂质,并且任选地包括H 2 O 3等离子体处理。 使用在40mA / cm 2电流密度下的第一沉积步骤和以60mA / cm 2电流密度进行第二沉积步骤的第二个ECP工艺来沉积 第二铜层超过沟槽。 在第二退火步骤之后,CMP工艺使铜层平坦化。 通过该方法可以实现更少的铜缺陷,降低的S,Cl和C杂质,以及Rc性能的提高。
Abstract:
A method of electroplating conductive material on semiconductor wafers improves deposited film quality by providing greater control over the formation of the film grain structure. Better grain size control is achieved by applying a continuous DC plating current to the wafer which avoids sharp discontinuities in the current as the applied current is increased in successive stages during a plating cycle. Current discontinuities are avoided by gradually increasing the current in a ramp-like fashion between the successive plating stages.
Abstract:
A method for forming a microelectronic layer while employing a sputtering method employs a reactor chamber. A sputtering target and a substrate are positioned within the reactor chamber, along with a sputtering target heater at a side of sputtering target opposite the substrate. At least one of: (1) a heater to sputtering target distance; (2) sputtering power; (3) deposition time; and (4) sputtering gas flow rate, is controlled in accord with a pre-determined function of sputtering target lifetime to provide enhanced uniformity of the deposited layer.
Abstract:
A novel method for preventing the formation of voids in metal interconnects fabricated on a wafer, particularly during a thermal anneal process, is disclosed. The method includes fabricating metal interconnects between metal lines on a wafer. During a thermal anneal process carried out to reduce electrical resistance of the interconnects, the wafer is positioned in spaced-apart relationship to a wafer heater. This spacing configuration facilitates enhanced stabilility and uniformity in heating of the wafer by reducing the presence of particles on and providing a uniform flow of heated air or gas against and the wafer backside. This eliminates or at least substantially reduces the formation of voids in the interconnects during the anneal process.