DISPLAY DEVICES
    42.
    发明公开
    DISPLAY DEVICES 失效
    液晶显示器。

    公开(公告)号:EP0462259A1

    公开(公告)日:1991-12-27

    申请号:EP91902233.0

    申请日:1991-01-04

    CPC classification number: G09G3/3607

    Abstract: Un dispositif d'affichage d'images en couleurs pour postes récepteurs de télévision et vidéophones, par exemple, comprend un panneau d'affichage (3) avec une matrice de rangées et de colonnes d'éléments à cristaux liquides ferroélectriques (FLC). Un système de filtrage séquentiel des couleurs (7-17) est agencé entre une source de lumière (5) et le panneau d'affichage ou entre le panneau d'affichage et le spectateur. Les rangées d'éléments FLC sont adressées en séquence et chaque rangée est successivement mise en état non émetteur après un intervalle prédéterminé qui suit son adressage, pendant une période prédéterminée. Le système de filtrage des couleurs peut être divisé en au moins deux zones indépendamment commutables alignées avec des groupes respectifs de rangées d'éléments FLC. Les zones de filtrage peuvent être commutées pendant que les groupes respectifs de rangées d'éléments FLC sont mis en état non émetteur.

    Deposition processes
    43.
    发明公开
    Deposition processes 失效
    沉积过程

    公开(公告)号:EP0367466A3

    公开(公告)日:1991-07-24

    申请号:EP89310869.6

    申请日:1989-10-23

    CPC classification number: G02F1/133516 G02F1/133512

    Abstract: In a process for depositing a planarising material in spaces (5,6) between a pattern of regions (1,2,3), such as dye stripes or dots, on a substrate (4), the planarising material is deposited as a layer (7) over the pattern. The substrate is irradiated, from the reverse side, by a source (8) of radiation, such as UV, to which the pattern material is opaque and to which the planarising material is responsive such that it is rendered insoluble to a particular solvent. The radiation acts on only those parts (9-12) of the planarising material which are in the spaces. The remainder (13-15) of the planarising layer is then removed by use of the solvent. Alternatively, or additionally, an ITO or other UV transparent layer may be formed over the pattern and a layer of resist formed thereover. The radiation then passes through the spaces and acts on only the resist areas over the spaces to render them soluble. Those areas and the ITO layer beneath them are then removed by etching, leaving ITO areas accurately aligned with the pattern. The process may be used in the manufacture of LC displays or semiconductor devices.

    Liquid crystal materials
    44.
    发明公开
    Liquid crystal materials 失效
    液晶材料

    公开(公告)号:EP0354753A3

    公开(公告)日:1991-01-30

    申请号:EP89308024.2

    申请日:1989-08-07

    CPC classification number: C09K19/408

    Abstract: Liquid crystal polymers, which may be useful for optical information storage, either alone or in mixture with other liquid crystals, are of the general formula
    wherein the mesogenic grouping M has a general structure
    wherein the rings P and Q are selected from phenyl, trans-cyclohexyl, pyridyl, pyrimidinyl, dioxanyl, and bicyclo (2.2.2) octyl. The rings P and/or Q may carry lateral substituents, preferably Me or F. The general structure of Formula (I) may represent a homopolymer or a copolymer.

    Method of manufacturing a thin film transistor
    45.
    发明公开
    Method of manufacturing a thin film transistor 失效
    制造薄膜晶体管的方法

    公开(公告)号:EP0329482A3

    公开(公告)日:1991-01-16

    申请号:EP89301591.7

    申请日:1989-02-17

    CPC classification number: H01L29/66757 H01L29/4908 H01L29/78618 Y10S148/147

    Abstract: In a process for manufacturing a thin film transistor, a first polysilicon layer (9) is formed on a substrate (10) and a silicon dioxide layer (11) is formed on a region of the first polysilicon layer leaving exposed regions of that layer. A second polysilicon layer (12) is formed on the silicon dioxide layer and aligned therewith. Regions of a selectively-grown electrically-­conductive film (13) are deposited on the second polysilicon layer and on the exposed regions (14,15) of the first polysilicon layer, the film being such that it will not grow on the edges (16,17) of the silicon dioxide layer, but will grow on the exposed polysilicon to form gate (18), source (19) and drain (20) electrodes. The edges of the silicon dioxide layer therefore remain uncoated. The film may be formed of tungsten or may be formed, for example, by selective silicon expitaxy, phosphorus doped.

    Amplifiers
    47.
    发明公开
    Amplifiers 失效
    放大器

    公开(公告)号:EP0346011A3

    公开(公告)日:1990-11-22

    申请号:EP89305546.7

    申请日:1989-06-02

    Inventor: Dedic, Ian Juso

    CPC classification number: H03F1/301 H03F1/308

    Abstract: A high current drive integrated circuit amplifier in which the quiescent currents in the output transistors (1, 2) are controlled by control current signals which are applied to respective input signal amplifiers (6, 7) and which are of values determined by currents flowing in respective current sensing transistors (8, 9) associated with the output transistors (1, 2). The control arrangement (12) ensures that the output transistors (1, 2) can not be driven to a non-conducting condition.

    Data processing system
    48.
    发明公开
    Data processing system 失效
    数据处理系统

    公开(公告)号:EP0292248A3

    公开(公告)日:1990-10-31

    申请号:EP88304475.2

    申请日:1988-05-18

    Abstract: The memory area within an electronic token of the 'smart card' type comprising a processor (4), memory (7, 8, 9) and input/output means (5) is divided into an execute only region and a non-volatile read/write region. A method of loading an applications program is described in which the program is loaded into a portion of the read/write region by software methods and in which the application program may be altered if the use of the card alters.

    Abstract translation: 包括处理器(4),存储器(7,8,9)和输入/输出装置(5)的“智能卡”类型的电子令牌内的存储器区域被分成仅执行区域和非易失性读取 /写区域。 描述了一种加载应用程序的方法,其中通过软件方法将程序加载到读/写区域的一部分中,并且其中如果卡的使用改变则可以改变应用程序。

    Method of making electron emission devices
    50.
    发明公开
    Method of making electron emission devices 失效
    Verfahren zur Herstellung von Elektronenemissionseinrichtungen。

    公开(公告)号:EP0385764A1

    公开(公告)日:1990-09-05

    申请号:EP90302158.2

    申请日:1990-02-28

    CPC classification number: H01J9/025 H01T4/12

    Abstract: A field emission device which may be used, for example, as a surge arrester, comprises two electrode structures (16,17) each comprising a substrate (2) from which project tapered electrically-conductive emitter bodies (7). The structures are bonded together, face-to-face, so that the emitters all project into a sealed space (19) formed between the substrates. The space may be evacuated or gas-filled. The emitterr are formed by depositing a conductive layer (1) on each substrate, forming masking pads (5) on the layer at the required emitter positions, and etching the conductive layer to leave a tapered body beneath each pad. The dimensions of the emitter bodies and the spacing between the substrates are preferably of the order of a few microns.

    Abstract translation: 可用作例如电涌放电器的场致发射器件包括两个电极结构(16,17),每个电极结构包括一个衬底(2),突出的锥形导电发射体(7)从该衬底移出。 这些结构面对面地结合在一起,使得发射体都投射到形成在基板之间的密封空间(19)中。 该空间可以被抽空或充气。 通过在每个基板上沉积导电层(1)形成发射极,在所需的发射极位置上在该层上形成掩模焊盘(5),并蚀刻导电层以在每个焊盘之下留下锥体。 发射体的尺寸和基板之间的间距优选为几微米量级。

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