Abstract:
Un dispositif d'affichage d'images en couleurs pour postes récepteurs de télévision et vidéophones, par exemple, comprend un panneau d'affichage (3) avec une matrice de rangées et de colonnes d'éléments à cristaux liquides ferroélectriques (FLC). Un système de filtrage séquentiel des couleurs (7-17) est agencé entre une source de lumière (5) et le panneau d'affichage ou entre le panneau d'affichage et le spectateur. Les rangées d'éléments FLC sont adressées en séquence et chaque rangée est successivement mise en état non émetteur après un intervalle prédéterminé qui suit son adressage, pendant une période prédéterminée. Le système de filtrage des couleurs peut être divisé en au moins deux zones indépendamment commutables alignées avec des groupes respectifs de rangées d'éléments FLC. Les zones de filtrage peuvent être commutées pendant que les groupes respectifs de rangées d'éléments FLC sont mis en état non émetteur.
Abstract:
In a process for depositing a planarising material in spaces (5,6) between a pattern of regions (1,2,3), such as dye stripes or dots, on a substrate (4), the planarising material is deposited as a layer (7) over the pattern. The substrate is irradiated, from the reverse side, by a source (8) of radiation, such as UV, to which the pattern material is opaque and to which the planarising material is responsive such that it is rendered insoluble to a particular solvent. The radiation acts on only those parts (9-12) of the planarising material which are in the spaces. The remainder (13-15) of the planarising layer is then removed by use of the solvent. Alternatively, or additionally, an ITO or other UV transparent layer may be formed over the pattern and a layer of resist formed thereover. The radiation then passes through the spaces and acts on only the resist areas over the spaces to render them soluble. Those areas and the ITO layer beneath them are then removed by etching, leaving ITO areas accurately aligned with the pattern. The process may be used in the manufacture of LC displays or semiconductor devices.
Abstract:
Liquid crystal polymers, which may be useful for optical information storage, either alone or in mixture with other liquid crystals, are of the general formula wherein the mesogenic grouping M has a general structure wherein the rings P and Q are selected from phenyl, trans-cyclohexyl, pyridyl, pyrimidinyl, dioxanyl, and bicyclo (2.2.2) octyl. The rings P and/or Q may carry lateral substituents, preferably Me or F. The general structure of Formula (I) may represent a homopolymer or a copolymer.
Abstract:
In a process for manufacturing a thin film transistor, a first polysilicon layer (9) is formed on a substrate (10) and a silicon dioxide layer (11) is formed on a region of the first polysilicon layer leaving exposed regions of that layer. A second polysilicon layer (12) is formed on the silicon dioxide layer and aligned therewith. Regions of a selectively-grown electrically-conductive film (13) are deposited on the second polysilicon layer and on the exposed regions (14,15) of the first polysilicon layer, the film being such that it will not grow on the edges (16,17) of the silicon dioxide layer, but will grow on the exposed polysilicon to form gate (18), source (19) and drain (20) electrodes. The edges of the silicon dioxide layer therefore remain uncoated. The film may be formed of tungsten or may be formed, for example, by selective silicon expitaxy, phosphorus doped.
Abstract:
A transaction system enables a portable token to cooperate with a fixed terminal by being inductively coupled to the terminal. The terminal comprises means (6, 12) for transmitting a carrier signal and detecting a variation in the power demand thereof which is indicative of the presence of an inductively coupled token.
Abstract:
A high current drive integrated circuit amplifier in which the quiescent currents in the output transistors (1, 2) are controlled by control current signals which are applied to respective input signal amplifiers (6, 7) and which are of values determined by currents flowing in respective current sensing transistors (8, 9) associated with the output transistors (1, 2). The control arrangement (12) ensures that the output transistors (1, 2) can not be driven to a non-conducting condition.
Abstract:
The memory area within an electronic token of the 'smart card' type comprising a processor (4), memory (7, 8, 9) and input/output means (5) is divided into an execute only region and a non-volatile read/write region. A method of loading an applications program is described in which the program is loaded into a portion of the read/write region by software methods and in which the application program may be altered if the use of the card alters.
Abstract:
A field emission device which may be used, for example, as a surge arrester, comprises two electrode structures (16,17) each comprising a substrate (2) from which project tapered electrically-conductive emitter bodies (7). The structures are bonded together, face-to-face, so that the emitters all project into a sealed space (19) formed between the substrates. The space may be evacuated or gas-filled. The emitterr are formed by depositing a conductive layer (1) on each substrate, forming masking pads (5) on the layer at the required emitter positions, and etching the conductive layer to leave a tapered body beneath each pad. The dimensions of the emitter bodies and the spacing between the substrates are preferably of the order of a few microns.