公开(公告)号：WO2007112180A3

公开(公告)日：2008-01-10

申请号：PCT/US2007063462

申请日：2007-03-07

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  KAUSHAL SANJEEV ,  SUGISHIMA KENJI ,  RAO DONTHINENI RAMESH KUMAR

Inventor： KAUSHAL SANJEEV ,  SUGISHIMA KENJI ,  RAO DONTHINENI RAMESH KUMAR

IPC: H01L21/00

CPC classification number: H01L21/67253 ,  H01L21/67242 ,  H01L21/67248 ,  H01L21/67288 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and system for non-invasive sensing and monitoring of a processing system (100, 200) employed in semiconductor manufacturing. The method allows for detecting and diagnosing drift and failures in the processing system (100, 200) and taking the appropriate correcting measures. The method includes positioning at least one non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906) on an outer surface of a system component of the processing system (200), where the at least one invasive sensor forms a wireless sensor network (902), acquiring a sensor signal from the at least one non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906), where the sensor signal tracks a gradual or abrupt change in a processing state of the system component during flow of a process gas in contact with the system component, and extracting the sensor signal from the wireless sensor network (902) to store and process the sensor signal. In one embodiment, the non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906) can be an accelerometer sensor and the wireless sensor network (902) can be motes-based.

Abstract translation: 一种用于半导体制造中使用的处理系统（100,200）的非侵入式感测和监测的方法和系统。 该方法允许检测和诊断处理系统（100,200）中的漂移和故障并采取适当的校正措施。 该方法包括将至少一个非侵入式传感器（247a-d，248a-b，249a-b，250a-c，906）定位在处理系统（200）的系统部件的外表面上，其中至少 一个入侵传感器形成无线传感器网络（902），从至少一个非侵入式传感器（247a-d，248a-b，249a-b，250a-c，906）获取传感器信号，其中传感器信号跟踪 在与系统部件接触的处理气体的流动期间系统部件的处理状态的逐渐或突然的变化，以及从无线传感器网络（902）提取传感器信号以存储和处理传感器信号。 在一个实施例中，非侵入式传感器（247a-d，248a-b，249a-b，250a-c，906）可以是加速度计传感器，并且无线传感器网络（902）可以是基于空白的。

公开(公告)号：WO2007117802A3

公开(公告)日：2008-01-03

申请号：PCT/US2007063570

申请日：2007-03-08

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  SUZUKI KENJI

Inventor： SUZUKI KENJI

IPC: H01L21/768

CPC classification number: H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76873 ,  H01L2221/1089

Abstract: A method of integrated processing of a patterned substrate (400, 600) for copper metallization. The method includes providing the patterned substrate (400, 600) containing a via (426, 626) and a trench (424, 624) in a vacuum processing tool (300), and performing an integrated process on the patterned substrate (400, 600) in the vacuum processing tool (300) by depositing a first metal-containing layer (428, 628) over the patterned substrate (400, 600), removing by sputter etching the first metal-containing layer (428, 628) from the bottom (426b, 626b) of the via (426, 626) and at least partially removing the first metal-containing layer (428, 628) from the bottom (424b, 624b) of the trench (424,624), depositing a conformal Ru layer (432, 632) onto the sputter etched first metal-containing layer (428a, 628a), depositing a non-conformal Cu layer (434,634) on the conformal Ru layer (432), and plating Cu (436, 636) over the patterned substrate (400, 600). According to one embodiment of the invention, the method can further include depositing a second metal-containing layer (430) onto the sputter etched first metal-containing layer (428a) prior to depositing the conformal Ru layer (432).

Abstract translation: 一种用于铜金属化的图案化衬底（400,600）的集成处理方法。 该方法包括在真空处理工具（300）中提供包含通孔（426,626）和沟槽（424,624）的图案化衬底（400,600），并且在图案化衬底（400,600）上执行集成处理 ）通过在图案化衬底（400,600）上沉积第一含金属层（428,628），通过从底部溅射蚀刻去除第一含金属层（428,628）而在真空处理工具（300） （426,626）的至少一部分（426b，626b），并且从沟槽（424,624）的底部（424b，624b）至少部分地去除第一含金属层（428,628），沉积共形Ru层 （428a，628a）上，在共形Ru层（432）上沉积非共形Cu层（434,634），以及在图案化衬底（436,636）上电镀Cu（436,636） （400,600）。 根据本发明的一个实施例，该方法可以进一步包括在沉积共形Ru层（432）之前，在溅射蚀刻的第一含金属层（428a）上沉积第二含金属层（430）。

公开(公告)号：WO2007134035A2

公开(公告)日：2007-11-22

申请号：PCT/US2007/068447

申请日：2007-05-08

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  DIP, Anthony ,  REID, Kimberly, G.

Inventor： DIP, Anthony ,  REID, Kimberly, G.

IPC: C23C16/30 ,  C23C16/56

CPC classification number: C23C16/303 ,  C23C16/56

Abstract: A method is provided for in-situ formation of a thin oxidized AlN film on a substrate. The method includes providing the substrate in a process chamber (10), depositing an AfN film on the substrate (40), and post-treating the AIN film with exposure to a nitrogen and oxygen-containing gas. The post-treating increases the dielectric constant of the AIN film with substantially no increase in the AIN film thickness. The method can also include pre-treating the substrate (40) prior to AIN deposition, post-anneaiing the AIN film before or after the post-treatment, or both.

Abstract translation: 提供了一种在衬底上原位形成薄的氧化的AlN膜的方法。 该方法包括在处理室（10）中提供衬底，在衬底（40）上沉积AfN膜，以及在暴露于含氮和含氧气体的情况下对AlN膜进行后处理。 后处理增加了AIN膜的介电常数，而AlIN膜厚度基本上没有增加。 该方法还可以包括在AIN沉积之前预处理衬底（40），在后处理之前或之后对AlN膜进行后处理或二者。

公开(公告)号：WO2007118042A2

公开(公告)日：2007-10-18

申请号：PCT/US2007/065756

申请日：2007-04-02

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  CERIO, Frank, M., Jr.

Inventor： CERIO, Frank, M., Jr.

IPC: C23C14/00

CPC classification number: C23C14/046 ,  C23C14/18 ,  C23C14/354

Abstract: An iPVD system (200A) is programmed to deposit a barrier and/or seed layer (10) using a Ru-containing material into high aspect ratio nano-size features on semiconductor substrates (12, 211 ) using a process which enhances the sidewalÊ (16) coverage compared to the field and bottom (15) coverage(s) while minimizing or eliminating overhang within an IPVD processing chamber (220). In the preferred embodiment, an IPVD apparatus having a frusto-conical ruthenium target (225) equipped with a high density ICP source is provided.

Abstract translation: iPVD系统（200A）被编程为使用增强侧翼的过程，将使用含Ru材料的阻挡层和/或种子层（10）沉积到半导体衬底（12,211）上的高纵横比纳米尺寸特征中 16）与现场和底部（15）覆盖相比，同时最小化或消除IPVD处理室（220）内的突出。 在优选实施例中，提供了具有配备有高密度ICP源的截头圆锥形钌靶（225）的IPVD装置。

公开(公告)号：WO2007118006A2

公开(公告)日：2007-10-18

申请号：PCT/US2007/065331

申请日：2007-03-28

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  CLARK, Robert D.

Inventor： CLARK, Robert D.

IPC: H01L21/314 ,  C23C16/448 ,  C23C16/455 ,  C23C16/30 ,  C23C28/02

CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02274 ,  H01L21/3142 ,  H01L21/318

Abstract: A method is provided for depositing a gate dielectric that includes at least two rare earth metal elements in the form of a nitride or an aluminum nitride. The method includes disposing a substrate (25, 92) in a process chamber (10) and exposing the substrate (25, 92) to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate (25, 92) may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate (25, 92) is exposed to a gas pulse of a nitrogen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element. The sequential exposing steps may be repeated to deposit a mixed rare earth nitride or aluminum nitride layer (96) with a desired thickness. Purge or evacuation steps may also be performed after each gas pulse.

Abstract translation: 提供了一种用于沉积包含氮化物或氮化铝形式的至少两种稀土元素的栅极电介质的方法。 该方法包括将处理室（10）中的衬底（25,92）布置并将衬底（25,92）暴露于含有第一稀土前体的气体脉冲和含有第二稀土前体的气体脉冲。 衬底（25,92）也可以任选地暴露于含有铝前体的气体脉冲。 在每个前体气体脉冲之后，基板（25,92）暴露于含氮气体的气体脉冲。 在替代实施例中，第一和第二稀土前体可以被脉冲在一起，并且任一种或两者可以与铝前体一起脉冲。 第一和第二稀土前体包含不同的稀土金属元素。 可以重复顺序曝光步骤以沉积具有所需厚度的混合稀土氮化物或氮化铝层（96）。 在每个气体脉冲之后也可以进行吹扫或抽空步骤。

公开(公告)号：WO2007117991A1

公开(公告)日：2007-10-18

申请号：PCT/US2007/065024

申请日：2007-03-27

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  CLARK, Robert, D.

Inventor： CLARK, Robert, D.

IPC: H01L29/51 ,  H01L21/28 ,  H01L29/78 ,  H01L29/92 ,  H01L29/94 ,  H01L21/314

CPC classification number: H01L21/02192 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02194 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3141 ,  H01L28/40 ,  H01L29/517 ,  H01L29/78 ,  H01L29/94

Abstract: A semiconductor device (90, 91), such as a transistor or capacitor, is provided. The device (90, 91) includes a substrate (25, 92), a gate dielectric (96) over the substrate (25, 92), and a conductive gate electrode film (98) over the gate dielectric (96). The gate dielectric (96) includes a mixed rare earth oxide, nitride or oxynitride film containing at least two different rare earth metal elements.

Abstract translation: 提供了诸如晶体管或电容器的半导体器件（90,91）。 器件（90,91）包括衬底（25,92），在衬底（25,92）上方的栅极电介质（96），以及栅极电介质（96）上方的导电栅电极膜（98）。 栅极电介质（96）包括含有至少两种不同稀土金属元素的混合稀土氧化物，氮化物或氧氮化物膜。

公开(公告)号：WO2007117898A1

公开(公告)日：2007-10-18

申请号：PCT/US2007/064466

申请日：2007-03-21

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  SUZUKI, Kenji ,  GOMI, Atsushi

Inventor： SUZUKI, Kenji ,  GOMI, Atsushi

IPC: C23C16/455 ,  C23C16/16

CPC classification number: C23C16/45574 ,  C23C16/16 ,  C23C16/45565

Abstract: A system for introducing a precursor vapor to a processing chamber (10, 110) configured for forming a thin metal on a substrate (25, 125) is described. The vapor delivery system includes means for introducing a dilution gas to the precursor vapor and adjusting the spatial distribution of the dilution gas addition in order to affect improvements to the properties of the deposited film.

Abstract translation: 描述了用于将前体蒸汽引入配置用于在基板（25,125）上形成薄金属的处理室（10,110）的系统。 蒸汽输送系统包括用于将稀释气体引入前体蒸气并调节稀释气体添加物的空间分布的装置，以便影响沉积膜的性质的改善。

公开(公告)号：WO2007115029A2

公开(公告)日：2007-10-11

申请号：PCT/US2007/065342

申请日：2007-03-28

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  CLARK, Robert, D.

Inventor： CLARK, Robert, D.

IPC: C23C16/448 ,  C23C16/455

CPC classification number: C23C16/40 ,  C23C16/308 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/50

Abstract: A method is provided for depositing a gate dielectric that includes at least two rare earth metal elements in the form of an oxide or an aluminate. The method includes disposing a substrate (25, 92) in a process chamber (10) and exposing the substrate (25, 92) to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate (25, 92) may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate (25, 92) is exposed to a gas pulse of an oxygen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element. The sequential exposing steps may be repeated to deposit a mixed rare earth oxide or aluminate layer (96) with a desired thickness. Purge or evacuation steps may also be performed after each gas pulse.

Abstract translation: 提供一种用于沉积包含至少两种氧化物或铝酸盐形式的稀土元素的栅极电介质的方法。 该方法包括将处理室（10）中的衬底（25,92）布置并将衬底（25,92）暴露于含有第一稀土前体的气体脉冲和含有第二稀土前体的气体脉冲。 衬底（25,92）也可任选地暴露于含有铝前体的气体脉冲。 在每个前体气体脉冲之后，基板（25,92）暴露于含氧气体的气体脉冲。 在替代实施方案中，第一和第二稀土前体可以一起被脉冲，并且任一种或两者可以与铝前体一起脉冲。 第一和第二稀土前体包含不同的稀土金属元素。 可以重复顺序曝光步骤以沉积具有所需厚度的混合稀土氧化物或铝酸盐层（96）。 在每个气体脉冲之后也可以执行吹扫或抽空步骤。

公开(公告)号：WO2007112181A3

公开(公告)日：2007-10-04

申请号：PCT/US2007/063466

申请日：2007-03-07

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KAUSHAL, Sanjeev ,  SUGISHIMA, Kenji ,  RAO, Donthineni, Ramesh Kumar

Inventor： KAUSHAL, Sanjeev ,  SUGISHIMA, Kenji ,  RAO, Donthineni, Ramesh Kumar

IPC: H01L21/00

Abstract: A method and system for non-invasive sensing and monitoring of a processing system (100, 200) employed in semiconductor manufacturing. The method allows for detecting and diagnosing drift and failures in the processing system (100, 200) and taking the appropriate correcting measures. The method includes positioning at least one non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906) on an outer surface of a system component of the processing system (200), where the at least one non- invasive sensor forms a wireless sensor network (902), acquiring a sensor signal from the at least one non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906), where the sensor signal tracks a gradual or abrupt change in a processing state of the system component during flow of a process gas in contact with the system component, and extracting the sensor signal from the wireless sensor network (902) to store and process the sensor signal. In one embodiment, the non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906) can be an accelerometer sensor and the wireless sensor network (902) can be motes-based.

公开(公告)号：WO2007041469A3

公开(公告)日：2007-09-13

申请号：PCT/US2006038390

申请日：2006-09-27

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  CERIO FRANK M JR

Inventor： CERIO FRANK M JR

IPC: C23C14/35 ,  C23C14/54

CPC classification number: C23C14/541 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01L21/2855 ,  H01L21/76876 ,  H01L21/76879

Abstract: An iPVD system (200A, 200B) is programmed to deposit uniform material (115, 120), such as a metallic material, into high aspect ratio nano-sized features (110) on semiconductor substrates (105) using a process that enhances the feature filling (130C) compared to the field deposition (106), while maximizing the size of the grain features in the deposited material opening (140) at the top of the feature during the process. Sequential deposition and etching are provided by controlling DC and high density power levels and other parameters.

Abstract translation: iPVD系统（200A，200B）被编程为使用增强特征的过程将诸如金属材料的均匀材料（115,120）沉积到半导体衬底（105）上的高纵横比纳米尺寸特征（110）中 在该过程期间，在特征顶部使沉积材料开口（140）中的颗粒特征的尺寸最大化，从而与场沉积（106）相比填充（130℃）。 通过控制DC和高密度功率等级和其他参数来提供顺序沉积和蚀刻。