Abstract:
A chip package including a first substrate is provided. A plurality of first conductive pads is disposed on a first side of the first substrate. A second substrate is attached onto a second side opposite to the first side of the first substrate. The second substrate includes a micro-electric element and has a plurality of second conductive pads corresponding to the plurality of first conductive pads, disposed on a first side of the second substrate and between the first substrate and the second substrate. A redistribution layer is disposed on a second side opposite to the first side of the second substrate. The redistribution layer penetrates the second substrate, second conductive pads and the first substrate and extends into the first conductive pads to electrically connect the first and second conductive pads.
Abstract:
An embodiment of the invention provides a chip package which includes: a semiconductor substrate having a first surface and a second surface; a first recess extending from the first surface towards the second surface; a second recess extending from a bottom of the first recess towards the second surface, wherein a sidewall and the bottom of the first recess and a second sidewall and a second bottom of the second recess together form an exterior side surface of the semiconductor substrate; a wire layer disposed over the first surface and extending into the first recess and/or the second recess; an insulating layer positioned between the wire layer and the semiconductor substrate; and a metal light shielding layer disposed over the first surface and having at least one hole, wherein a shape of the at least one hole is a quadrangle.
Abstract:
A chip package includes a chip, a dam layer, a permanent adhesive layer, a support, a buffer layer, a redistribution layer, a passivation layer, and a conducting structure. A conducting pad and a sensing device of the chip are located on a first surface of a substrate of the chip, and the conducting pad protrudes from the side surface of the substrate. The dam layer surrounds the sensing device. The permanent adhesive layer is between the support and the substrate. The support and the permanent adhesive layer have a trench to expose the conducting pad. The buffer layer is located on the support. The redistribution layer is located on the buffer layer and on the support, the permanent adhesive layer, and the conducting pad facing the trench. The passivation layer covers the redistribution layer, the buffer layer, and the conducting pad.
Abstract:
A chip package includes a semiconductor chip, an interposer, a polymer adhesive supporting layer, a redistribution layer and a packaging layer. The semiconductor chip has a sensor device and a conductive pad electrically connected to the sensing device, and the interposer is disposed on the semiconductor chip. The interposer has a trench and a through hole, which the trench exposes a portion of the sensing device, and the through hole exposes the conductive pad. The polymer adhesive supporting layer is interposed between the semiconductor chip and the interposer, and the redistribution layer is disposed on the interposer and in the through hole to be electrically connected to the conductive pad. The packaging layer covers the interposer and the redistribution layer, which the packaging layer has an opening exposing the trench.
Abstract:
A semiconductor package includes a substrate, at least one support, a cover, and a plate. The substrate has at least one light sensor or thermal sensor, a first surface, and a second surface opposite to the first surface. The light sensor or the thermal sensor is disposed on the first surface. The second surface has an opening to expose the light sensor (or the thermal sensor). The support is disposed on the first surface. The cover is disposed on the support, such that the cover is above the light sensor (or the thermal sensor) to form a first space between the cover and the light sensor (or the thermal sensor). The plate is placed on the second surface to cover the opening, such that a second space is formed between the plate and the light sensor (or the thermal sensor).
Abstract:
A method of manufacturing chip package includes providing a semiconductor wafer having a plurality of semiconductor chips. An outer spacer and a plurality of inner spacers are formed on the semiconductor wafer. A protection lid is formed and disposed on the outer spacer and the inner spacers. A plurality of cavities is formed on each of the semiconductor chips from a lower surface thereof to expose the conductive pad disposed on the upper surface of the semiconductor chip. A plurality of conductive portions is formed and fills each of the cavities and electrically connected to each of the conductive pads. A plurality of solder balls is disposed on the lower surface and electrically connected to each of the conductive portions. The semiconductor chips are separated by cutting along a plurality of cutting lines between each of the semiconductor chips.
Abstract:
A chip package including a first substrate having an upper surface, a lower surface and a sidewall is provided. A sensing region or device region and a conducting pad are adjacent to the upper surface. A through-hole penetrates the first substrate. A redistribution layer extends from the lower surface into the through-hole and is electrically connected to the conducting pad. The redistribution layer further laterally extends from the lower surface to protrude from the sidewall. A method for forming the chip package is also provided.
Abstract:
The invention provides an electronic device package and fabrication method thereof. The electronic device package includes a sensor chip. An upper surface of the sensor chip comprises a sensing film. A covering plate having an opening structure covers the upper surface of the sensor chip. A cavity is between the covering plate and the sensor chip, corresponding to a position of the sensing film, where the cavity communicates with the opening structure. A spacer is between the covering plate and the sensor chip, surrounding the cavity. A pressure releasing region is between the spacer and the sensing film.
Abstract:
A manufacturing method of a semiconductor structure includes the following steps. A wafer structure having a silicon substrate and a protection layer is provided. An electrical pad on the protection layer is exposed through the concave region of the silicon substrate. An isolation layer is formed on the sidewall of the silicon substrate surrounding the concave region and a surface of the silicon substrate facing away from the protection layer. A redistribution layer is formed on the isolation layer and the electrical pad. A passivation layer is formed on the redistribution layer. The passivation layer is patterned to form a first opening therein. A first conductive layer is formed on the redistribution layer exposed through the first opening. A conductive structure is arranged in the first opening, such that the conductive structure is in electrical contact with the first conductive layer.
Abstract:
An embodiment of the invention provides a chip package including a semiconductor substrate having a first surface and a second surface opposite thereto. A conducting pad is located on the first surface. A side recess is on at least a first side of the semiconductor substrate, wherein the side recess extends from the first surface toward the second surface and across the entire length of the first side. A conducting layer is located on the first surface and electrically connected to the conducting pad, wherein the conducting layer extends to the side recess.