公开(公告)号：KR1020090093885A

公开(公告)日：2009-09-02

申请号：KR1020090016960

申请日：2009-02-27

Applicant: 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 ,  도쿄엘렉트론가부시키가이샤

Inventor： 오오미타다히로 ,  히라야먀마사키 ,  고토테츠야 ,  시라이야스유키 ,  기타노마사후미 ,  와타누키코헤이 ,  마츠오카타카아키 ,  무라카와시게미

IPC: H05H1/46 ,  H01L21/3065 ,  H01L21/205

CPC classification number: H01J37/32192 ,  H01J37/32238

Abstract: A microwave plasma processing device, a dielectric window for the same, and a method for manufacturing the dielectric window are provided to form the dielectric window for the microwave plasma processing device by covering a ceramic surface in contact with the plasma with a planarization coating layer. A dielectric window(10) for a microwave plasma processing device is comprised of a ceramic member(12) made of Al2O3, a planarization coating insulation layer(14) coated on a surface of one side of the ceramic member, and a corrosion-resistant layer(16) coated on the planarization coating insulation layer. The corrosion-resistant layer is contacted with the plasma excitation space that is a process space. The surface of the process space among the ceramic member after cutting and polishing processes has an unevenness with a peak-to-valley of 1.78 um and Ra of 0.232 um. The planarization coating insulation layer is formed on the surface of the process space of the ceramic member and is made of SiCO coating layer. The dielectric window is formed by sintering the corrosion-resistant Y2O3 on the surface of the SiO2 layer.

Abstract translation: 提供微波等离子体处理装置，用于其的电介质窗和用于制造电介质窗的方法，以通过用平坦化涂层覆盖与等离子体接触的陶瓷表面来形成用于微波等离子体处理装置的电介质窗。 用于微波等离子体处理装置的电介质窗（10）包括由Al 2 O 3制成的陶瓷构件（12），涂覆在陶瓷构件的一侧的表面上的平坦化涂层绝缘层（14）和耐腐蚀的 层（16）涂覆在平坦化涂层绝缘层上。 耐腐蚀层与作为工艺空间的等离子体激发空间接触。 在切割和抛光工艺之后陶瓷构件中的处理空间的表面具有不均匀性，峰 - 谷为1.78μm，Ra为0.232μm。 平坦化涂层绝缘层形成在陶瓷构件的工艺空间的表面上，并由SiCO涂层制成。 电介质窗通过在SiO2层的表面上烧结耐蚀Y2O3而形成。