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公开(公告)号：KR1020130058400A
公开(公告)日：2013-06-04
申请号：KR1020110124391
申请日：2011-11-25
Applicant: 삼성전자주식회사
CPC classification number: B41J2/14209 , B41J2/162 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1631
Abstract: PURPOSE: An inkjet printing device and a nozzle forming method are provided to form a micro nozzle of a tapered form whose cross sectional area becomes smaller near an outlet. CONSTITUTION: An inkjet printing device comprises a flow path-forming board, a nozzle board(111), and an actuator. A pressure chamber is formed on the flow path forming board. The nozzle board is arranged under the flow path forming board and includes a nozzle(128) for discharging ink. The actuator provides a driving power for discharging the ink inside the pressure chamber through the nozzle. The nozzle board includes a first nozzle board(10) and a second nozzle board(20). A first nozzle unit(30) of a tapered form which is connected to the pressure chamber is formed on the first nozzle board. A second nozzle unit(40) of a tapered form which is connected to the first nozzle unit is formed on the second nozzle board.
Abstract translation: 目的：提供喷墨打印装置和喷嘴形成方法以形成在出口附近的横截面积变小的锥形微喷嘴。 构成：喷墨打印装置包括流路形成板，喷嘴板（111）和致动器。 在流路形成基板上形成有压力室。 喷嘴板布置在流路形成板下方，并且包括用于排出墨的喷嘴（128）。 致动器提供用于通过喷嘴排出压力室内的油墨的驱动力。 喷嘴板包括第一喷嘴板（10）和第二喷嘴板（20）。 在第一喷嘴板上形成有连接到压力室的锥形的第一喷嘴单元（30）。 在第二喷嘴板上形成有与第一喷嘴单元连接的锥形的第二喷嘴单元（40）。
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公开(公告)号：KR1020110086365A
公开(公告)日：2011-07-28
申请号：KR1020100006053
申请日：2010-01-22
Applicant: 삼성전자주식회사
IPC: H01L29/786 , G02F1/133
CPC classification number: H01L21/28008 , H01L27/1285 , H01L27/1292 , H01L29/4908 , H01L21/288 , H01L27/1214 , H01L29/45 , H01L51/0022 , H01L51/102
Abstract: PURPOSE: A thin film transistor and a method for manufacturing a thin film transistor are provided to control an ink droplet discharged from a nozzle, thereby changing the width and the printing shape of a pattern. CONSTITUTION: A gate(212) and at least one insulating film(220) are successively formed on a substrate(200). A source electrode(231) and a drain electrode(232) are formed on the insulating layer. A channel layer(240) is made of a semiconductor which is formed on the source electrode and the drain electrode. A pixel electrode(270) is electrically connected to the drain electrode. The gate, the source electrode, and the drain electrode are formed by using a hybrid inkjet printing apparatus.
Abstract translation: 目的：提供薄膜晶体管和制造薄膜晶体管的方法来控制从喷嘴排出的墨滴，从而改变图案的宽度和印刷形状。 构成：在衬底（200）上依次形成栅极（212）和至少一个绝缘膜（220）。 源极电极（231）和漏电极（232）形成在绝缘层上。 沟道层（240）由形成在源电极和漏电极上的半导体制成。 像素电极（270）电连接到漏电极。 栅极，源电极和漏电极通过使用混合喷墨印刷装置形成。
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公开(公告)号：KR1020110066656A
公开(公告)日：2011-06-17
申请号：KR1020090123399
申请日：2009-12-11
Applicant: 삼성전자주식회사
CPC classification number: B41J2/1642 , B41J2/1433 , B41J2/162 , B41J2/1628 , B41J2/1629 , B41J2/1631
Abstract: PURPOSE: A nozzle plate and a manufacturing method thereof are provided to discharge liquid drops having precise volume by forming a permittivity reduction zone on the upper part of a substrate around a nozzle. CONSTITUTION: A nozzle plate includes: a substrate(110) having a nozzle; a permittivity reduction zone formed on the upper part of the substrate around a nozzle and provided with many pores and many partition walls formed between the pores; and a protective film(130) formed on the substrate to cover the pores and the partition walls.
Abstract translation: 目的：提供一种喷嘴板及其制造方法，通过在喷嘴周围的基板的上部形成介电常数降低区域来排出具有精确体积的液滴。 构成：喷嘴板包括：具有喷嘴的基板（110）; 介电常数降低区，形成在喷嘴周围的基板的上部，并且在孔之间形成许多孔和许多分隔壁; 以及形成在所述基板上以覆盖所述孔和所述分隔壁的保护膜（130）。
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Patent Agency Ranking
公开(公告)号：KR100590558B1
公开(公告)日：2006-06-19
申请号：KR1020040079959
申请日：2004-10-07
Applicant: 삼성전자주식회사
IPC: B41J2/045
CPC classification number: B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1646 , B41J2002/14419
Abstract: 크로스토크를 감소시킬 수 있는 압전 방식의 잉크젯 프린트 헤드와 그 제조방법이 개시되어 있다. 개시되어 있는 압전 방식의 잉크젯 프린트 헤드는 잉크의 토출을 위한 구동력을 제공하는 압전 액츄에이터; 상기 압전 액츄에이터가 상면에 설치되고, 잉크가 도입되는 잉크 도입구가 관통 형성되며, 토출될 잉크가 채워지는 압력 챔버와 상기 압력 챔버의 폭보다 작은 폭으로 상기 압력 챔버에서 연장되는 제 1 리스트릭터가 그 저면에 형성되는 상부 기판; 상기 잉크 도입구와 연결되어 유입된 잉크가 저장되는 매니폴드가 그 저면으로부터 소정 깊이로 형성되고, 상기 제 1 리스트릭터와 연계하여 상기 매니폴드로부터 상기 압력 챔버로 잉크가 유입되도록 하는 제 2 리스트릭터가 상기 제 1 리스트릭터와 연결 형성되며, 상기 압력 챔버의 타단부에 대응되는 위치에 댐퍼가 관통 형성된 중간 기판; 및 상기 댐퍼와 대응되는 위치에 잉크를 토출하기 위한 노즐이 관통 형성된 하부 기판;을 구비하며, 상기 하부 기판, 중간 기판 및 상부 기판은 순차적으로 적층되어 서로 접합되며, 모두 단결정 실리콘 기판으로 이루어진다. 개시되어 있는 압전 방식의 잉크젯 프린트 헤드 및 그 제조방법에 의하면, 중간 기판의 저면을 가공하여 매니폴드를 형성하고 이를 압력 챔버의 하부에 설치함으로써 매니폴드의 폭을 용이하게 증가시킬 수 있다. 따라서, 매니폴드의 체적이 증가되어 다수 노즐에서 동시에 잉크가 토출될 때 인접한 리스트릭터 사이에 발생되는 크로스토크가 저감될 수 있는 효과가 있다. 또한, 매니폴드의 단면적이 증가되어 재충전 과정에서 잉크 공급 유량이 증 대되므로 고주파수의 토출 시에도 안정적인 작동이 가능한 장점이 있다.
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45.发明授权다공질 실리콘 혹은 다공질 산화 실리콘을 이용한 두꺼운 희생층을 가진 다층 구조 웨이퍼 및 그 제조방법 失效다공질실리콘혹은다공질산화실리콘을이용한두꺼운희생을가진다층구조웨이퍼및그제조방
公开(公告)号：KR100434537B1
公开(公告)日：2004-06-05
申请号：KR1019990011269
申请日：1999-03-31
Applicant: 삼성전자주식회사
IPC: H01L21/768
CPC classification number: G01P15/0802 , B81C1/0019 , B81C1/00507 , B81C2201/0115 , H01L21/76251 , H01L21/76262
Abstract: A multilayered wafer with a thick sacrificial layer, which is obtained by forming a sacrificial layer of oxidized porous silicon or porous silicon and growing an epitaxial polysilicon layer on the sacrificial layer, and a fabrication method thereof are provided. The multilayered wafer with a thick sacrificial layer adopts a porous silicon layer or an oxidized porous silicon layer as a sacrificial layer such that a sufficient gap can be obtained between a substrate and a suspension structure upon the manufacture of the suspension structure of a semiconductor actuator or a semiconductor inertia sensor. Also, in a fabrication method of the wafer according to the present invention, a p -type or n -type wafer doped at a high concentration is prepared for, and then a thick porous silicon layer can be obtained simply by anodic-bonding the surface of the wafer. Also, when polysilicon is grown on a porous silicon layer by an epitaxial process, it is grown faster than when single crystal silicon is grown.
Abstract translation: 提供通过形成氧化多孔硅或多孔硅的牺牲层并在牺牲层上生长外延多晶硅层而获得的具有厚牺牲层的多层晶片及其制造方法。 具有厚牺牲层的多层晶片采用多孔硅层或氧化多孔硅层作为牺牲层，使得在制造半导体致动器的悬架结构时可以在衬底和悬架结构之间获得足够的间隙，或者 半导体惯性传感器。 而且，在根据本发明的晶片的制造方法中，准备以高浓度掺杂的p +型或n +型晶片，然后厚的多孔硅层可以是 只需通过阳极键合晶圆表面即可获得。 此外，当通过外延工艺在多孔硅层上生长多晶硅时，其生长速度比生长单晶硅时快。 ＆lt;图像＆GT;
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公开(公告)号：KR100300965B1
公开(公告)日：2001-10-29
申请号：KR1019990020488
申请日：1999-06-03
Applicant: 삼성전자주식회사
IPC: G11B19/20
Abstract: 본발명은광 디스크드라이브의보조구동기(secondary actuator)로서사용되는정전기력(electrostatic force)을이용한미소거울구동기를기재한다. 본발명에따른정전기력을이용한광디스크드라이브의미소거울구동기는미소거울이중심축을기준으로임의의각도까지왕복회전하도록구동되고, 마이크로크기를갖는거울의구동변위가크거나거울의크기가마이크로사이즈에비해상당히커서구동변위가상대적으로증가되더라도, 두도체사이의간격과변위구간의크기에무관하게힘을발생하도록하며거울크기가커질수록힘이더 증가하게되도록, 광디스크드라이브의스윙암의끝단에크기, 무게, 단순성정도를고려하여정전기력을이용한미소거울을구동시키는구동기를거울과일체형으로제작함으로써, 크기와무게를줄일수있으며단순화를꾀 할수 있다.
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公开(公告)号：KR1020000061888A
公开(公告)日：2000-10-25
申请号：KR1019990011269
申请日：1999-03-31
Applicant: 삼성전자주식회사
IPC: H01L21/768
CPC classification number: G01P15/0802 , B81C1/0019 , B81C1/00507 , B81C2201/0115 , H01L21/76251 , H01L21/76262
Abstract: PURPOSE: A multilayer wafer is to form a porous silicon or a porous oxidized silicon as a sacrifice layer, thereby securing an enough space between a substrate and a depending structure. CONSTITUTION: A method of a multilayer wafer comprises steps of: preparing a doped p¬+ and n¬+ wafer as a substrate wafer(1); forming a porous silicon layer by a predetermined thickness on a surface of the wafer by an anode reaction; making an oxidized a porous silicon layer(3) by oxidizing the porous silicon layer using a thermal oxidation process; depositing a poly silicon seed layer on the porous oxidized silicon layer using a method of chemical vapor deposition; growing an epitaxial poly-silicon layer on the porous oxidized silicon layer using the poly-silicon seed layer. Because a porosity of silicon is varied upon a concentration and a current density of a fluoric acid, if the porosity is set to 55%, the porous oxidized silicon layer can be grown without a transformation of the wafer by a volumetric expansion, thereby solving a problem for an air resistance and sticking.
Abstract translation: 目的：多层晶片将形成多孔硅或多孔氧化硅作为牺牲层，由此确保基板和悬垂结构之间的足够空间。 构成：多层晶片的方法包括以下步骤：制备掺杂的p +和n +晶片作为衬底晶片（1）; 通过阳极反应在所述晶片的表面上形成预定厚度的多孔硅层; 通过使用热氧化法氧化多孔硅层，使氧化的多孔硅层（3） 使用化学气相沉积的方法在多孔氧化硅层上沉积多晶种子层; 使用多晶硅种子层在多孔氧化硅层上生长外延多晶硅层。 由于硅的孔隙率根据氟酸的浓度和电流密度而变化，所以如果将孔隙率设定为55％，则可以在不通过体积膨胀使晶片转变的情况下生长多孔氧化硅层，从而求解 空气阻力和粘附问题。
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公开(公告)号：KR1020000050473A
公开(公告)日：2000-08-05
申请号：KR1019990000387
申请日：1999-01-11
Applicant: 삼성전자주식회사
IPC: G01P15/08
CPC classification number: H02N1/008 , B81B3/0094 , B81B2201/025 , B81B2203/0136 , G01C19/5755 , G01P15/097 , G01P15/125 , G01P2015/0814
Abstract: PURPOSE: A three-dimensional comb structure is provided to increase an electrostatic force through the increase of the number of combs per a unit area by manufacturing combs in vertical directions on a suspension structure and a substrate. CONSTITUTION: A suspension structure(42) is floated while maintaining a certain gap with a substrate to sense inertia movements and to be oscillated on the substrate. At least one or more elastic members(44) are connected to the suspension structure(42) in order to enable the suspension structure(42) to be oscillated. At least one or more supporters(45) are connected to the substrate to support the elastic members(44). A moving comb structure(43) is connected to the suspending structure(42) and has at least one comb formed to be protruded.
Abstract translation: 目的：提供一种三维梳状结构，通过在悬挂结构和基底上垂直方向制造梳子，通过增加每单位面积的梳子数来增加静电力。 构成：悬挂结构（42）浮动，同时与衬底保持一定的间隙以感测惯性运动并且在衬底上振荡。 至少一个或多个弹性构件（44）连接到悬架结构（42），以使得悬挂结构（42）能够摆动。 至少一个或多个支撑件（45）连接到基板以支撑弹性构件（44）。 移动梳结构（43）连接到悬挂结构（42）上并具有形成为突出的至少一个梳子。
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