Abstract:
An infrared detector is provided. The infrared detector comprises a substrate; a resonance unit disposed spaced apart from the substrate to generate heat by producing resonance at a plurality of wavelengths in incident infrared light; a thermistor layer supporting the resonance unit, wherein a resistance value of the thermistor is varied according to the heat generated from the resonance unit; and a connection unit electrically connecting the thermistor layer to the substrate while supporting the thermistor layer such that the thermistor is spaced apart from the substrate.
Abstract:
Disclosed is an infrared detector, capable of detecting an infrared spectrum with a broad bandwidth by using a broadband surface plasmon resonator. The disclosed infrared detector comprises: a substrate; a light absorber spaced apart from the substrate; and a pair of thermal legs supporting the light absorber to be spaced apart from the substrate, wherein the light absorber includes; a thermistor layer of which the resistance value changes according to a temperature variation; and at least two resonator layers arranged on at least one between an upper surface and a lower surface of the thermistor layer.
Abstract:
Disclosed is a wafer level vacuum sealing method using conformal deposition. The disclosed wafer level vacuum sealing method includes a step of preparing read circuit wafers on which arrays comprising detection devices are arranged; a step of preparing a capping wafer for packing the detection device array in vacuum on the read circuit wafer; a step of bonding the capping wafer on the read circuit wafer; and a step of sealing a via hole which is formed in the capping wafer with a via material by conformal deposition.