公开(公告)号：KR1020000034534A

公开(公告)日：2000-06-26

申请号：KR1019980051873

申请日：1998-11-30

Applicant: 삼성전자주식회사

Inventor： 여경환

IPC: H01L21/3065

Abstract: PURPOSE: The etching of a semi-conductor substrate is provided by minimizing a side reaction coming from supplying helium-gas in the procedure of etching, when furnishing helium gas selectively, which is done through being furnished helium-gas for cooling to the rear side of the semi-conductor wafer that will be etched by using an etching apparatus. CONSTITUTION: The etching method of a semi-conductor substrate contains the following two steps; the first step to estimate the coating or non-coating of a photo-resistant layer pattern on the semi-conductor wafer, and the second step to etch on the rear side of the semi-conductor wafer without supplying helium gas, when the result of the first step has the pattern of photo-resistant layer.

Abstract translation: 目的：半导体衬底的蚀刻是通过在选择性地提供氦气的同时最小化在蚀刻过程中从提供氦气的侧面反应来提供的，这是通过提供用于冷却到后侧的氦气 将通过使用蚀刻装置进行蚀刻的半导体晶片。 构成：半导体衬底的蚀刻方法包括以下两个步骤： 估计半导体晶片上的耐光层图案的涂层或未涂覆的第一步骤，以及在不提供氦气的情况下在半导体晶片的后侧蚀刻的第二步骤，当结果为 第一步具有抗光层的图案。