술폰화된 폴리페닐실세스퀴옥산 및 양의 저항온도계수를 가지기 위한 도판트가 도핑된 폴리아닐린 도전체와 그의 제조방법
    41.
    发明公开
    술폰화된 폴리페닐실세스퀴옥산 및 양의 저항온도계수를 가지기 위한 도판트가 도핑된 폴리아닐린 도전체와 그의 제조방법 有权
    由磺化聚苯基倍半硅氧烷掺杂的聚苯胺和正电温度系数的掺杂剂及其制造方法

    公开(公告)号:KR1020120126430A

    公开(公告)日:2012-11-21

    申请号:KR1020110044197

    申请日:2011-05-11

    CPC classification number: C08G73/1071 C08L83/04 H01B1/128

    Abstract: PURPOSE: A polyaniline conductor doped with dopants is provided to control temperature resistant coefficient, electrical conductivity and thermal resistance and to be usable in a various fields such as an embedded capacitor, a resistor, antistatic, removal of electrostatic, electromagnetic wave shield, a battery, an electrode semiconductor, a solar cell, etc. CONSTITUTION: A polyaniline conductor is doped with sulfonated polyphenylsilsesquioxane and dopants enabling the polyaniline conductor to have a positive temperature coefficient. A manufacturing method of the polyaniline comprises: a step of dissolving an emeraldine base, polyaniline and sulfonated polyphenylsilsesquioxane; a step of manufacturing a first solution by mixing the material; a step of dissolving emeraldine base, polyaniline and the dopant into an organic solvent and mixing the materials to manufacturing a second solution; a step of mixing the first and second solutions; and a step of drying the mixed solution. [Reference numerals] (AA) Comparative embodiment 1; (BB) Embodiment 1; (CC) Embodiment 2; (DD) Embodiment 3; (EE) Embodiment 4; (FF) Comparative embodiment 2

    Abstract translation: 目的:提供掺杂有掺杂剂的聚苯胺导体,以控制耐温系数,导电性和耐热性,并可用于各种领域,如嵌入式电容器,电阻器,抗静电,去除静电,电磁波屏蔽,电池 ,电极半导体,太阳能电池等。构成:聚苯胺导体掺杂有磺化聚苯基倍半硅氧烷和掺杂剂,使聚苯胺导体具有正温度系数。 聚苯胺的制造方法包括:将翠绿亚胺碱,聚苯胺和磺化聚苯基倍半硅氧烷溶解的步骤; 通过混合材料制造第一溶液的步骤; 将翠绿亚胺碱,聚苯胺和掺杂剂溶解在有机溶剂中并将材料混合以制造第二溶液的步骤; 混合第一和第二溶液的步骤; 以及干燥混合溶液的步骤。 (附图标记)(AA)比较实施例1; (BB)实施例1; (CC)实施例2; (DD)实施例3; (EE)实施例4; (FF)比较实施例2

    유기술폰산계 화합물, 이를 포함하는 도판트, 및 상기 도판트를 포함하는 전도성 고분자 복합체
    42.
    发明公开
    유기술폰산계 화합물, 이를 포함하는 도판트, 및 상기 도판트를 포함하는 전도성 고분자 복합체 有权
    含有ARYLSULFONIC酸的化合物,含有它们的掺杂物,以及含有DOPANT的导电聚合物复合材料

    公开(公告)号:KR1020120120851A

    公开(公告)日:2012-11-02

    申请号:KR1020110038650

    申请日:2011-04-25

    Abstract: PURPOSE: An organic sulfonic acid-based compound is provided to have excellent compatibility, environment resistance, conductivity, and mechanical performance and to be used as a double-functional dopant simultaneously having a function as a dopant and molecular cognizing function. CONSTITUTION: An organic sulfonic acid-based compound represented by chemical formula 1: Ar(R3)(R2)O-R1-SO3Z is connected with a hydrocarbon chain with flexible aryl group containing a substituent. In chemical formula 1, Ar is an aryl group, R1 is a C1-20 alkyl, C2-20 alkenyl, halo-C1-20 alkyl, halo-C2-20 alkenyl, or -(CH2CH2O)n, each of R2 and R3 is selected from -H, -OH, -CH3, -C6H5, -C6H4OCH3, -OCH2C6H5, C1-20 alkyl, C2-20 alkenyl, halo-C1-20 alkyl, halo-C2-20 alkenyl, and -(CH2CH2O)n, but R2 and R3 is not -H, simultaneously, Z is -H or metal cation(M^+), and n is an integer of 0 or more.

    Abstract translation: 目的:提供有机磺酸基化合物以具有优异的相容性,耐环境性,导电性和机械性能,并且可以用作同时具有掺杂剂和分子识别功能的功能的双功能掺杂剂。 构成:由化学式1表示的有机磺酸基化合物:Ar(R3)(R2)O-R1-SO3Z与具有含有取代基的柔性芳基的烃链连接。 在化学式1中,Ar为芳基,R 1为C 1-20烷基,C 2-20链烯基,卤代-C 1-20烃基,卤代-C 20-20烯基或 - (CH 2 CH 2 O)n,R 2和R 3各自为 选自-H,-OH,-CH 3,-C 6 H 5,-C 6 H 4 OCH 3,-OCH 2 C 6 H 5,C 1-20烷基,C 2-20烯基,卤代C 1-20烷基,卤代-C 20-20烯基和 - (CH 2 CH 2 O) n,但R2和R3不是-H,同时Z是-H或金属阳离子(M +),n是0以上的整数。

    폴리비닐계 공중합체, 상기를 포함하는 도판트, 및 상기 도판트를 포함하는 전도성 고분자 복합체
    43.
    发明公开
    폴리비닐계 공중합체, 상기를 포함하는 도판트, 및 상기 도판트를 포함하는 전도성 고분자 복합체 有权
    聚乙烯共聚物,含有它的掺杂物和含有掺杂物的导电聚合物复合材料

    公开(公告)号:KR1020120120801A

    公开(公告)日:2012-11-02

    申请号:KR1020110038577

    申请日:2011-04-25

    Abstract: PURPOSE: A polyvinyl-based copolymer is provided to manufacture excellent conductive polymer composite with excellent compatibility, thermal resistance, conductivity and/or mechanical performance. CONSTITUTION: A polyvinyl-based copolymer is represented by chemical formula 1: -[(CH2-CH(R1))x-(CH2-CH(R2))y-(CH2-CH(R3))z]p-. In chemical formula 1,three polymer blocks included in the copolymer are independently selected, R1 is -OH or -C6H5-OH where if R1 is -OH then R2 and R3 is respectively -O-R-SO3H- and -O-R-SO3^-M^+ and if R1 is -C6H5-OH then R2 and R3 is respectively -C6H5O-R-SO3H and -C6H5O-R-SO3^-M^+, in -O-R-SO3H, a substituent R is C-20 alkyl group, halogen-substituted alkyl group, C2-20 alkenyl group, halogen-substituted C2-20 alkenyl group or -(CH2CH2O)n, M^+ is cation of metal, x, y, z and n is integer which is not negative, but each of y and n is independently 1, p is an integer from 1-500,000. [Reference numerals] (AA) Wavelength(nm)

    Abstract translation: 目的:提供聚乙烯基共聚物,以制造优异的导电聚合物复合材料,具有优异的相容性,耐热性,导电性和/或机械性能。 构成:聚乙烯基共聚物由化学式1表示: - [(CH 2 -CH(R 1))x - (CH 2 -CH(R 2))y - (CH 2 -CH(R 3))z] p - 在化学式1中,独立地选择包含在共聚物中的三个聚合物嵌段,R1是-OH或-C6H5-OH,其中如果R1是-OH,则R2和R3分别是-OR-SO3H-和-OR-SO3-M ^ +,如果R 1是-C 6 H 5 -OH,那么R 2和R 3分别是-OR 6,SO 3 H和-C 6 H 5 O-R 3 SO 3,-M 2 +,在-OR-SO 3 H中,取代基R是C 20烷基 ,卤素取代的烷基,C2-20烯基,卤素取代的C2-20烯基或 - (CH2CH2O)n,M ^ +是金属的阳离子,x,y,z,n是不为负的整数, 但y和n各自独立地为1,p为1-500,000的整数。 (标号)(AA)波长(nm)

    플라스마 처리를 이용한 전도성 고분자의 고상 도핑 방법 및 이를 위한 장치
    48.
    发明公开
    플라스마 처리를 이용한 전도성 고분자의 고상 도핑 방법 및 이를 위한 장치 无效
    使用等离子体和导电聚合物的导电聚合物的固体掺杂方法

    公开(公告)号:KR1020110045668A

    公开(公告)日:2011-05-04

    申请号:KR1020090102333

    申请日:2009-10-27

    Abstract: PURPOSE: A solid doping method of conductive polymers using plasma is provided to enlarge the field of application of conductive polymers by solid doping conductive polymers using plasma treatment of conjugated conductive polymers which have high dispersibility in a solvent and does not have conductivity. CONSTITUTION: A solid doping method of conductive polymers using plasma comprises the steps of: manufacturing conductive polymer nanoparticles or solid molded materials containing conductive polymer nanoparticles; and treating the conductive polymer nanoparticles or solid molded materials containing conductive polymer nanoparticles with plasma.

    Abstract translation: 目的:提供使用等离子体的导电聚合物的固体掺杂方法,以通过使用在溶剂中具有高分散性并且不具有导电性的共轭导电聚合物的等离子体处理来扩大使用固体掺杂导电聚合物的导电聚合物的应用领域。 构成:使用等离子体的导电聚合物的固体掺杂方法包括以下步骤:制备导电聚合物纳米颗粒或含有导电聚合物纳米颗粒的固体模塑材料; 并用等离子体处理含有导电聚合物纳米粒子的导电聚合物纳米颗粒或固体模塑材料。

    전자 주게 및 전자 받게를 포함하는 폴리엔 화합물을 포함하는 결정의 성장 특성 조절 방법
    49.
    发明公开
    전자 주게 및 전자 받게를 포함하는 폴리엔 화합물을 포함하는 결정의 성장 특성 조절 방법 失效
    用于控制含有电子和电子受体的聚烯烃化合物的晶体的生长特性的方法

    公开(公告)号:KR1020110016712A

    公开(公告)日:2011-02-18

    申请号:KR1020090074345

    申请日:2009-08-12

    Inventor: 권오필 최은영

    Abstract: PURPOSE: A method for controlling growth characteristics of crystals is provided to obtain crystals containing polyene compounds with a thick thickness suitable as broadband THz generation sources. CONSTITUTION: A method for controlling growth characteristics of crystals comprises a step for growing polyene compounds including electron-donors represented by chemical formula 1 and electron-acceptors in the presence of metal salt additives in a solvent. In chemical formula 1, n is 1, 2, 3 or 4; R1 and R2 are selected from the group consisting of H, deuterium, -OH, ester group, C1~4 alkoxy group, -NH2, -NHR4, -NR5R6, and per-halogenated, halogenated or non-halogenated aliphatic group or aromatic group; and R3 is -OH, ester group, C1~4 alkoxy group, -NH2, -NHR7, and -NR8R9.

    Abstract translation: 目的:提供一种控制晶体生长特性的方法,以获得具有适合作为宽带THz发生源的厚度的含有多烯化合物的晶体。 构成:用于控制晶体生长特性的方法包括在溶剂中在金属盐添加剂存在下生长包括由化学式1表示的电子给体的多烯化合物和电子受体的步骤。 化学式1中,n为1,2,3或4; R 1和R 2选自H,氘,-OH,酯基,C 1-4烷氧基,-NH 2,-NHR 4,-NR 5 R 6和全卤代,卤代或非卤代脂族基团或芳族基团 ; 并且R 3是-OH,酯基,C 1-4烷氧基,-NH 2,-NHR 7和-NR 8 R 9。

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