Abstract:
PURPOSE: A polyaniline conductor doped with dopants is provided to control temperature resistant coefficient, electrical conductivity and thermal resistance and to be usable in a various fields such as an embedded capacitor, a resistor, antistatic, removal of electrostatic, electromagnetic wave shield, a battery, an electrode semiconductor, a solar cell, etc. CONSTITUTION: A polyaniline conductor is doped with sulfonated polyphenylsilsesquioxane and dopants enabling the polyaniline conductor to have a positive temperature coefficient. A manufacturing method of the polyaniline comprises: a step of dissolving an emeraldine base, polyaniline and sulfonated polyphenylsilsesquioxane; a step of manufacturing a first solution by mixing the material; a step of dissolving emeraldine base, polyaniline and the dopant into an organic solvent and mixing the materials to manufacturing a second solution; a step of mixing the first and second solutions; and a step of drying the mixed solution. [Reference numerals] (AA) Comparative embodiment 1; (BB) Embodiment 1; (CC) Embodiment 2; (DD) Embodiment 3; (EE) Embodiment 4; (FF) Comparative embodiment 2
Abstract:
PURPOSE: An organic sulfonic acid-based compound is provided to have excellent compatibility, environment resistance, conductivity, and mechanical performance and to be used as a double-functional dopant simultaneously having a function as a dopant and molecular cognizing function. CONSTITUTION: An organic sulfonic acid-based compound represented by chemical formula 1: Ar(R3)(R2)O-R1-SO3Z is connected with a hydrocarbon chain with flexible aryl group containing a substituent. In chemical formula 1, Ar is an aryl group, R1 is a C1-20 alkyl, C2-20 alkenyl, halo-C1-20 alkyl, halo-C2-20 alkenyl, or -(CH2CH2O)n, each of R2 and R3 is selected from -H, -OH, -CH3, -C6H5, -C6H4OCH3, -OCH2C6H5, C1-20 alkyl, C2-20 alkenyl, halo-C1-20 alkyl, halo-C2-20 alkenyl, and -(CH2CH2O)n, but R2 and R3 is not -H, simultaneously, Z is -H or metal cation(M^+), and n is an integer of 0 or more.
Abstract translation:目的:提供有机磺酸基化合物以具有优异的相容性,耐环境性,导电性和机械性能,并且可以用作同时具有掺杂剂和分子识别功能的功能的双功能掺杂剂。 构成:由化学式1表示的有机磺酸基化合物:Ar(R3)(R2)O-R1-SO3Z与具有含有取代基的柔性芳基的烃链连接。 在化学式1中,Ar为芳基,R 1为C 1-20烷基,C 2-20链烯基,卤代-C 1-20烃基,卤代-C 20-20烯基或 - (CH 2 CH 2 O)n,R 2和R 3各自为 选自-H,-OH,-CH 3,-C 6 H 5,-C 6 H 4 OCH 3,-OCH 2 C 6 H 5,C 1-20烷基,C 2-20烯基,卤代C 1-20烷基,卤代-C 20-20烯基和 - (CH 2 CH 2 O) n,但R2和R3不是-H,同时Z是-H或金属阳离子(M +),n是0以上的整数。
Abstract:
PURPOSE: A polyvinyl-based copolymer is provided to manufacture excellent conductive polymer composite with excellent compatibility, thermal resistance, conductivity and/or mechanical performance. CONSTITUTION: A polyvinyl-based copolymer is represented by chemical formula 1: -[(CH2-CH(R1))x-(CH2-CH(R2))y-(CH2-CH(R3))z]p-. In chemical formula 1,three polymer blocks included in the copolymer are independently selected, R1 is -OH or -C6H5-OH where if R1 is -OH then R2 and R3 is respectively -O-R-SO3H- and -O-R-SO3^-M^+ and if R1 is -C6H5-OH then R2 and R3 is respectively -C6H5O-R-SO3H and -C6H5O-R-SO3^-M^+, in -O-R-SO3H, a substituent R is C-20 alkyl group, halogen-substituted alkyl group, C2-20 alkenyl group, halogen-substituted C2-20 alkenyl group or -(CH2CH2O)n, M^+ is cation of metal, x, y, z and n is integer which is not negative, but each of y and n is independently 1, p is an integer from 1-500,000. [Reference numerals] (AA) Wavelength(nm)
Abstract:
본 발명은 술폰화된 폴리페닐실세스퀴옥산(Sulfonated PolyPenylSilsesQuioxane, S-PPSQ)으로 도핑된 전도성 폴리아닐린 및 그의 제조 방법에 관한 것이다. 상기 술폰화된 폴리페닐실세스퀴옥산의 도핑으로 인하여 일반적인 폴리아닐린에 비해 전도성이 높고, 내열성이 높다. 상기 폴리아닐린은 폴리아닐린과 술폰화된 폴리페닐실세스퀴옥산을 유기용매에서 용해시킨 후, 교반하는 방법으로 제조할 수 있다.
Abstract:
본 발명은 술폰화된 폴리페닐실세스퀴옥산(Sulfonated PolyPenylSilsesQuioxane, S-PPSQ)으로 도핑된 전도성 폴리아닐린 및 그의 제조 방법에 관한 것이다. 상기 술폰화된 폴리페닐실세스퀴옥산의 도핑으로 인하여 일반적인 폴리아닐린에 비해 전도성이 높고, 내열성이 높다. 상기 폴리아닐린은 폴리아닐린과 술폰화된 폴리페닐실세스퀴옥산을 유기용매에서 용해시킨 후, 교반하는 방법으로 제조할 수 있다.
Abstract:
본 발명은 폴리아닐린에 캄포술폰산(Camphorsulfonic acid, CSA) 및 수소결합 내열 도판트 하이드록시벤젠술폰산(Hydroxybenzenesulfonic acid, HBSA)을 도핑한 전도성 폴리아닐린에 관한 것이다. 상기 도핑으로 인하여 일반적인 폴리아닐린에 비해 전도성이 높고, 내열성이 높다. 상기 도핑된 전도성 폴리아닐린은 폴리아닐린, 캄포술폰산 및 하이드록시벤젠술폰산을 유기용매에서 용해시킨 후, 교반하는 방법으로 제조할 수 있다.
Abstract:
본 발명은 치환기가 부착된 아닐린유도체와, 치환기가 부착되지 않은 아닐린을 정해진 비율로 첨가하여 중합시키는 방법에 의해 폴리아닐린 중합체를 합성함으로써 상대적으로 높은 전기 전도도를 유지하면서도 일반 용매에서의 용해도와 분산성을 현저히 향상시킬 수 있도록 한 새로운 전도성 폴리아닐린 및 그의 제조방법을 제공한다.
Abstract:
PURPOSE: A solid doping method of conductive polymers using plasma is provided to enlarge the field of application of conductive polymers by solid doping conductive polymers using plasma treatment of conjugated conductive polymers which have high dispersibility in a solvent and does not have conductivity. CONSTITUTION: A solid doping method of conductive polymers using plasma comprises the steps of: manufacturing conductive polymer nanoparticles or solid molded materials containing conductive polymer nanoparticles; and treating the conductive polymer nanoparticles or solid molded materials containing conductive polymer nanoparticles with plasma.
Abstract:
PURPOSE: A method for controlling growth characteristics of crystals is provided to obtain crystals containing polyene compounds with a thick thickness suitable as broadband THz generation sources. CONSTITUTION: A method for controlling growth characteristics of crystals comprises a step for growing polyene compounds including electron-donors represented by chemical formula 1 and electron-acceptors in the presence of metal salt additives in a solvent. In chemical formula 1, n is 1, 2, 3 or 4; R1 and R2 are selected from the group consisting of H, deuterium, -OH, ester group, C1~4 alkoxy group, -NH2, -NHR4, -NR5R6, and per-halogenated, halogenated or non-halogenated aliphatic group or aromatic group; and R3 is -OH, ester group, C1~4 alkoxy group, -NH2, -NHR7, and -NR8R9.
Abstract translation:目的:提供一种控制晶体生长特性的方法,以获得具有适合作为宽带THz发生源的厚度的含有多烯化合物的晶体。 构成:用于控制晶体生长特性的方法包括在溶剂中在金属盐添加剂存在下生长包括由化学式1表示的电子给体的多烯化合物和电子受体的步骤。 化学式1中,n为1,2,3或4; R 1和R 2选自H,氘,-OH,酯基,C 1-4烷氧基,-NH 2,-NHR 4,-NR 5 R 6和全卤代,卤代或非卤代脂族基团或芳族基团 ; 并且R 3是-OH,酯基,C 1-4烷氧基,-NH 2,-NHR 7和-NR 8 R 9。