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    양자점의 제조 방법
    41.
    发明授权
    양자점의 제조 방법 有权
    制造量子点的方法

    公开(公告)号：KR101797366B1

    公开(公告)日：2017-11-13

    申请号：KR1020160075162

    申请日：2016-06-16

    Applicant: 아주대학교산학협력단

    Inventor： 김상욱 ,  박중필 ,  권오필

    IPC: C09K11/70 ,  C09K11/02 ,  C09K11/62 ,  C09K11/56

    CPC classification number: C09K11/70 ,  C09K11/02 ,  C09K11/565 ,  C09K11/62

    Abstract: 본발명에따른양자점의제조방법은인듐전구체와아연전구체를포함하는제1 용액을준비하는단계, 제1 용액에, 인전구체를포함하는제2 용액과갈륨전구체를포함하는제3 용액을첨가하여 InP 코어와코어상에형성된 GaP를포함하는제1 쉘층을포함하는 InP/GaP 양자점을형성하는단계, 및 InP/GaP 양자점이형성된제1 내지제3 용액이혼합된상태에서, 황전구체를혼합하여제1 쉘층상에 ZnS를포함하는제2 쉘층을형성하는단계를포함한다.

    Abstract translation: 制造根据本发明的量子点的方法加入到第三溶液至第二溶液中，镓前驱物包括以下步骤,,展特定于所述第一溶液中以制备含有铟前体和锌前体的第一溶液 在InP核和所述第一到第三溶液中以形成在InP / GAP量子点，以及形成在InP / GAP量子点包括包含在芯形成混合状态的间隙中，硫前体的混合物的第一壳层 并且在第一壳层上形成包含ZnS的第二壳层。

    비선형 광학용 퀴놀리늄 단결정
    42.
    发明公开
    비선형 광학용 퀴놀리늄 단결정 有权
    用于TERAHERTZ波浪应用的QUINOLINIUM SINGGLE CRYSTALS

    公开(公告)号：KR1020140033484A

    公开(公告)日：2014-03-18

    申请号：KR1020140024333

    申请日：2014-02-28

    Applicant: 아주대학교산학협력단

    Inventor： 권오필

    IPC: C07D215/06 ,  G02B1/02

    Abstract: The present invention relates to a quinolinone derivative crystal for nonlinear optics capable of displaying high molecular orientation and macroscopic optical nonlinearity. When using the quinolinone derivative crystal in terahertz light source, there is higher efficiency for terahertz wave generating than inorganic crystals or conventional organic crystals.

    Abstract translation: 本发明涉及能够显示高分子取向和宏观光学非线性的非线性光学用喹啉酮衍生物晶体。 当在太赫兹光源中使用喹啉酮衍生物晶体时，与无机晶体或常规有机晶体相比，产生太赫兹波的效率更高。

    유기술폰산계 화합물, 이를 포함하는 도판트, 및 상기 도판트를 포함하는 전도성 고분자 복합체
    45.
    发明公开
    유기술폰산계 화합물, 이를 포함하는 도판트, 및 상기 도판트를 포함하는 전도성 고분자 복합체 有权
    含有ARYLSULFONIC酸的化合物，含有它们的掺杂物，以及含有DOPANT的导电聚合物复合材料

    公开(公告)号：KR1020120120851A

    公开(公告)日：2012-11-02

    申请号：KR1020110038650

    申请日：2011-04-25

    Applicant: 아주대학교산학협력단

    Inventor： 이석현 ,  권오필 ,  김태자

    IPC: C07C309/11 ,  H01B1/20 ,  C08K5/42 ,  C08L81/00

    CPC classification number: H01B1/128 ,  C07C309/11 ,  C08G73/0266 ,  C08G2261/3221 ,  C08G2261/3222 ,  C08G2261/3223 ,  C08G2261/3422 ,  C08K5/42 ,  C08L77/00 ,  C08L79/02 ,  C08L79/08 ,  H01B1/127 ,  C08L65/00

    Abstract: PURPOSE: An organic sulfonic acid-based compound is provided to have excellent compatibility, environment resistance, conductivity, and mechanical performance and to be used as a double-functional dopant simultaneously having a function as a dopant and molecular cognizing function. CONSTITUTION: An organic sulfonic acid-based compound represented by chemical formula 1: Ar(R3)(R2)O-R1-SO3Z is connected with a hydrocarbon chain with flexible aryl group containing a substituent. In chemical formula 1, Ar is an aryl group, R1 is a C1-20 alkyl, C2-20 alkenyl, halo-C1-20 alkyl, halo-C2-20 alkenyl, or -(CH2CH2O)n, each of R2 and R3 is selected from -H, -OH, -CH3, -C6H5, -C6H4OCH3, -OCH2C6H5, C1-20 alkyl, C2-20 alkenyl, halo-C1-20 alkyl, halo-C2-20 alkenyl, and -(CH2CH2O)n, but R2 and R3 is not -H, simultaneously, Z is -H or metal cation(M^+), and n is an integer of 0 or more.

    Abstract translation: 目的：提供有机磺酸基化合物以具有优异的相容性，耐环境性，导电性和机械性能，并且可以用作同时具有掺杂剂和分子识别功能的功能的双功能掺杂剂。 构成：由化学式1表示的有机磺酸基化合物：Ar（R3）（R2）O-R1-SO3Z与具有含有取代基的柔性芳基的烃链连接。 在化学式1中，Ar为芳基，R 1为C 1-20烷基，C 2-20链烯基，卤代-C 1-20烃基，卤代-C 20-20烯基或 - （CH 2 CH 2 O）n，R 2和R 3各自为 选自-H，-OH，-CH 3，-C 6 H 5，-C 6 H 4 OCH 3，-OCH 2 C 6 H 5，C 1-20烷基，C 2-20烯基，卤代C 1-20烷基，卤代-C 20-20烯基和 - （CH 2 CH 2 O） n，但R2和R3不是-H，同时Z是-H或金属阳离子（M +），n是0以上的整数。

    폴리비닐계 공중합체, 상기를 포함하는 도판트, 및 상기 도판트를 포함하는 전도성 고분자 복합체
    46.
    发明公开
    폴리비닐계 공중합체, 상기를 포함하는 도판트, 및 상기 도판트를 포함하는 전도성 고분자 복합체 有权
    聚乙烯共聚物，含有它的掺杂物和含有掺杂物的导电聚合物复合材料

    公开(公告)号：KR1020120120801A

    公开(公告)日：2012-11-02

    申请号：KR1020110038577

    申请日：2011-04-25

    Applicant: 아주대학교산학협력단

    Inventor： 이석현 ,  권오필 ,  김태자

    IPC: C08F216/06 ,  C08F16/30 ,  C08L101/12 ,  H01B1/12

    CPC classification number: H01B1/128 ,  C08F8/36 ,  C08F216/06 ,  C08G2261/1452 ,  C08G2261/722 ,  C08L29/04 ,  C08L33/00 ,  C08L35/06 ,  C08L101/12 ,  C08L2203/20 ,  H01B1/127 ,  C08L79/02

    Abstract: PURPOSE: A polyvinyl-based copolymer is provided to manufacture excellent conductive polymer composite with excellent compatibility, thermal resistance, conductivity and/or mechanical performance. CONSTITUTION: A polyvinyl-based copolymer is represented by chemical formula 1: -[(CH2-CH(R1))x-(CH2-CH(R2))y-(CH2-CH(R3))z]p-. In chemical formula 1,three polymer blocks included in the copolymer are independently selected, R1 is -OH or -C6H5-OH where if R1 is -OH then R2 and R3 is respectively -O-R-SO3H- and -O-R-SO3^-M^+ and if R1 is -C6H5-OH then R2 and R3 is respectively -C6H5O-R-SO3H and -C6H5O-R-SO3^-M^+, in -O-R-SO3H, a substituent R is C-20 alkyl group, halogen-substituted alkyl group, C2-20 alkenyl group, halogen-substituted C2-20 alkenyl group or -(CH2CH2O)n, M^+ is cation of metal, x, y, z and n is integer which is not negative, but each of y and n is independently 1, p is an integer from 1-500,000. [Reference numerals] (AA) Wavelength(nm)

    Abstract translation: 目的：提供聚乙烯基共聚物，以制造优异的导电聚合物复合材料，具有优异的相容性，耐热性，导电性和/或机械性能。 构成：聚乙烯基共聚物由化学式1表示： - [（CH 2 -CH（R 1））x - （CH 2 -CH（R 2））y - （CH 2 -CH（R 3））z] p - 在化学式1中，独立地选择包含在共聚物中的三个聚合物嵌段，R1是-OH或-C6H5-OH，其中如果R1是-OH，则R2和R3分别是-OR-SO3H-和-OR-SO3-M ^ +，如果R 1是-C 6 H 5 -OH，那么R 2和R 3分别是-OR 6，SO 3 H和-C 6 H 5 O-R 3 SO 3，-M 2 +，在-OR-SO 3 H中，取代基R是C 20烷基 ，卤素取代的烷基，C2-20烯基，卤素取代的C2-20烯基或 - （CH2CH2O）n，M ^ +是金属的阳离子，x，y，z，n是不为负的整数， 但y和n各自独立地为1，p为1-500,000的整数。 （标号）（AA）波长（nm）

    플라스마 처리를 이용한 전도성 고분자의 고상 도핑 방법 및 이를 위한 장치
    49.
    发明公开
    플라스마 처리를 이용한 전도성 고분자의 고상 도핑 방법 및 이를 위한 장치 无效
    使用等离子体和导电聚合物的导电聚合物的固体掺杂方法

    公开(公告)号：KR1020110045668A

    公开(公告)日：2011-05-04

    申请号：KR1020090102333

    申请日：2009-10-27

    Applicant: 아주대학교산학협력단

    Inventor： 홍용철 ,  이석현 ,  권오필 ,  김태자

    IPC: C08J7/18 ,  H01L21/28

    Abstract: PURPOSE: A solid doping method of conductive polymers using plasma is provided to enlarge the field of application of conductive polymers by solid doping conductive polymers using plasma treatment of conjugated conductive polymers which have high dispersibility in a solvent and does not have conductivity. CONSTITUTION: A solid doping method of conductive polymers using plasma comprises the steps of: manufacturing conductive polymer nanoparticles or solid molded materials containing conductive polymer nanoparticles; and treating the conductive polymer nanoparticles or solid molded materials containing conductive polymer nanoparticles with plasma.

    Abstract translation: 目的：提供使用等离子体的导电聚合物的固体掺杂方法，以通过使用在溶剂中具有高分散性并且不具有导电性的共轭导电聚合物的等离子体处理来扩大使用固体掺杂导电聚合物的导电聚合物的应用领域。 构成：使用等离子体的导电聚合物的固体掺杂方法包括以下步骤：制备导电聚合物纳米颗粒或含有导电聚合物纳米颗粒的固体模塑材料; 并用等离子体处理含有导电聚合物纳米粒子的导电聚合物纳米颗粒或固体模塑材料。

    전자 주게 및 전자 받게를 포함하는 폴리엔 화합물을 포함하는 결정의 성장 특성 조절 방법
    50.
    发明公开
    전자 주게 및 전자 받게를 포함하는 폴리엔 화합물을 포함하는 결정의 성장 특성 조절 방법 失效
    用于控制含有电子和电子受体的聚烯烃化合物的晶体的生长特性的方法

    公开(公告)号：KR1020110016712A

    公开(公告)日：2011-02-18

    申请号：KR1020090074345

    申请日：2009-08-12

    Applicant: 아주대학교산학협력단

    Inventor： 권오필 ,  최은영

    IPC: C07C253/30 ,  C07C255/32

    Abstract: PURPOSE: A method for controlling growth characteristics of crystals is provided to obtain crystals containing polyene compounds with a thick thickness suitable as broadband THz generation sources. CONSTITUTION: A method for controlling growth characteristics of crystals comprises a step for growing polyene compounds including electron-donors represented by chemical formula 1 and electron-acceptors in the presence of metal salt additives in a solvent. In chemical formula 1, n is 1, 2, 3 or 4; R1 and R2 are selected from the group consisting of H, deuterium, -OH, ester group, C1~4 alkoxy group, -NH2, -NHR4, -NR5R6, and per-halogenated, halogenated or non-halogenated aliphatic group or aromatic group; and R3 is -OH, ester group, C1~4 alkoxy group, -NH2, -NHR7, and -NR8R9.

    Abstract translation: 目的：提供一种控制晶体生长特性的方法，以获得具有适合作为宽带THz发生源的厚度的含有多烯化合物的晶体。 构成：用于控制晶体生长特性的方法包括在溶剂中在金属盐添加剂存在下生长包括由化学式1表示的电子给体的多烯化合物和电子受体的步骤。 化学式1中，n为1,2,3或4; R 1和R 2选自H，氘，-OH，酯基，C 1-4烷氧基，-NH 2，-NHR 4，-NR 5 R 6和全卤代，卤代或非卤代脂族基团或芳族基团 ; 并且R 3是-OH，酯基，C 1-4烷氧基，-NH 2，-NHR 7和-NR 8 R 9。

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