公开(公告)号：KR1020120084107A

公开(公告)日：2012-07-27

申请号：KR1020110005434

申请日：2011-01-19

Applicant: 전자부품연구원

Inventor： 김원근 ,  김영훈 ,  한철종 ,  이정노 ,  오민석

IPC: H01L29/786 ,  H01L21/336 ,  G02F1/136

CPC classification number: H01L29/66742 ,  H01L29/45 ,  H01L29/7869

Abstract: PURPOSE: A method of manufacturing oxide semiconductor thin film transistor and semiconductor equipment are provided to reduce a contact resistance between source and drain semiconductor channel layers by using air pressure plasma processing. CONSTITUTION: A gate insulating film(114) where a channel layer(116) composed of an oxide semiconductor is formed is made on a substrate to cover a gate electrode. The surface of a generated channel layer is processed with use of air pressure plasma. A source and drain electrodes are respectively formed on both sides of the surface processed channel layer. A protective film(120) covering the generated source and drain electrodes and channel layer is formed.

Abstract translation: 目的：提供一种制造氧化物半导体薄膜晶体管和半导体设备的方法，以通过使用气压等离子体处理来降低源极和漏极半导体沟道层之间的接触电阻。 构成：在衬底上形成由氧化物半导体构成的沟道层（116）的栅极绝缘膜（114），以覆盖栅电极。 使用空气压力等离子体处理产生的通道层的表面。 源极和漏极分别形成在表面处理沟道层的两侧。 形成覆盖所产生的源极和漏极以及沟道层的保护膜（120）。

公开(公告)号：KR101114425B1

公开(公告)日：2012-03-05

申请号：KR1020090128729

申请日：2009-12-22

Applicant: 전자부품연구원 ,  엘에스전선 주식회사

Inventor： 한철종 ,  한정인 ,  김원근 ,  오민석 ,  김영훈 ,  권순형 ,  남진호 ,  김윤진 ,  고창모

IPC: B82B1/00 ,  B82B3/00

Abstract: 본발명은표면입자뭉침이제거된나노복합입자체및 그제조방법에 관한것으로, 보다상세하게는모입자인고분자입자와자입자인나노입자를포함하는건식복합체에있어서, 상기건식복합체를용액에분산시켜건식복합체의표면에뭉쳐있는나노입자를용해시켜제거하여나노복합입자체를제조하고, 상기나노복합입자체에나노입자를추가로투입하여두 번째건식복합체를제조한후, 다시상기두 번째건식복합체를용액에분산시켜두 번째건식복합체의표면에뭉쳐있는나노입자를용해시켜제거한고입자분율을가지는것을특징으로하는나노복합입자체에관한것이다.