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公开(公告)号：KR1020030023458A
公开(公告)日：2003-03-19
申请号：KR1020020035539
申请日：2002-06-25
Applicant: 신에쓰 가가꾸 고교 가부시끼가이샤 , 센트럴가라스 가부시기가이샤 , 파나소닉 주식회사
Inventor： 하타케야마준 , 하라다유지 , 가와이요시오 , 사사고마사루 , 엔도마사유키 , 기시무라신지 , 오오타니미치타카 , 미야자와사토루 , 즈츠미겐타로 , 마에다가즈히코
IPC: G03F7/032
CPC classification number: G03F7/0397 , G03F7/0046 , G03F7/0392 , G03F7/0395 , Y10S430/106 , Y10S430/108 , Y10S430/111
Abstract: PURPOSE: Provided are a high molecular weight compound, resist composition using the high molecular weight compound, which is sensitive to high-energy beam, has excellent sensitivity to high-energy beam at less than 200 nm, especially less than 170 nm wavelength, improved transparency of resist and excellent plasma etching resistance at the same time, and a patterning method using the resist composition. CONSTITUTION: The high molecular weight compound has repeating units of formula (1a), formula (1b) and formula (1c), in which R1 , R2 , R5 and R6 are each H, F, an alkyl or a fluorinated alkyl; R3 and R7 are each F or a fluorinated alkyl; R4 is an acid- unstable group; R8 is an adhesive group, H, an alkyl or a fluorinated alkyl; R10 is a single bond, an alkylene or a fluorinated alkylene; R11 and R12 are each H, an alkyl or a fluorinated alkyl; R13 is H, F, an alkyl or a fluorinated alkyl; R14 is H, an alkyl or an acid-unstable group; a, b, c are a number exceeding 0 but less than 1, proviso that the sum of a, b and c exceeds 0 but does not exceed 1; m is a integer of 1 to 5; n is an integer of 0 to 4, proviso that the sum of m and n is 5.
Abstract translation: 目的：提供高分子量化合物，使用对高能束敏感的高分子量化合物的抗蚀剂组合物，对小于200nm，特别是小于170nm波长的高能束具有极好的灵敏度，改善了 抗蚀剂的透明性和同时优异的等离子体耐蚀刻性，以及使用抗蚀剂组合物的图案化方法。 构成：高分子量化合物具有式（1a），式（1b）和式（1c）的重复单元，其中R 1，R 2，R 5和R 6各自为H，F，烷基或氟代烷基; R3和R7各自为F或氟化烷基; R4是酸不稳定基团; R8是粘合剂基团，H，烷基或氟化烷基; R 10是单键，亚烷基或氟化亚烷基; R 11和R 12各自为H，烷基或氟化烷基; R 13是H，F，烷基或氟代烷基; R14是H，烷基或酸不稳定基团; a，b，c是超过0但小于1的数字，条件是a，b和c之和超过0但不超过1; m为1〜5的整数， n为0〜4的整数，m和n的和为5。
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公开(公告)号：KR1020030023457A
公开(公告)日：2003-03-19
申请号：KR1020020035532
申请日：2002-06-25
Applicant: 신에쓰 가가꾸 고교 가부시끼가이샤 , 센트럴가라스 가부시기가이샤 , 파나소닉 주식회사
Inventor： 하라다유지 , 하타케야마준 , 가와이요시오 , 사사고마사루 , 엔도마사유키 , 기시무라신지 , 오오타니미치타카 , 미야자와사토루 , 즈츠미겐타로 , 마에다가즈히코
IPC: G03F7/032
CPC classification number: G03F7/0046 , C08F212/14 , G03F7/0392 , Y10S430/108 , Y10S430/146 , Y10S430/167
Abstract: PURPOSE: To obtain a resist material sensitive to high energy rays, having excellent sensitivity in the wave lengths of
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公开(公告)号：KR1019970007792B1
公开(公告)日：1997-05-16
申请号：KR1019930021136
申请日：1993-10-12
Applicant: 파나소닉 주식회사 , 와꼬 쥰야꾸 고교 가부시키가이샤
IPC: G03F7/40 , H01L21/027
CPC classification number: G03F7/0045 , G03F7/40
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Patent Agency Ranking
公开(公告)号：KR101169942B1
公开(公告)日：2012-08-06
申请号：KR1020060120474
申请日：2006-12-01
Applicant: 신에쓰 가가꾸 고교 가부시끼가이샤 , 센트럴가라스 가부시기가이샤 , 파나소닉 주식회사
IPC: C07D313/06 , C08K5/151
CPC classification number: C07D307/93 , C07D409/12 , G03F7/0046 , G03F7/0397
Abstract: 화학식 (1)의 에스테르 화합물의 중합을 통해 얻은 반복 단위 (2)를 포함하는 폴리머를 사용하여 레지스트 조성물을 형성한다. R
1 은 F 또는 C
1 -C
6 플루오로알킬이고, R
2 는 H 또는 C
1 -C
8 알킬이며, R
3 는 O 또는 C
1 -C
6 알킬렌이고, R
4 및 R
5 는 각각 H 또는 C
1 -C
10 알킬 또는 플루오로알킬이며, R
6 는 H 또는 산 불안정 기이다. 레지스트 조성물이, ArF 리소그래피에 의해 처리되었을 때, 개선된 분해능, 투명성, 최소화된 선 가장자리 조도, 개선된 에칭 저항성을 포함하는 이점을 갖는다. 레지스트 조성물은 투영렌즈와 웨이퍼 사이에 액체가 개재되는 Arf 침지식 리소그래피에 의해 처리되었을 때 더 나은 성능을 나타낸다.
레지스트 조성물, ArF 리소그래피, 침지식 리소그래피, 에칭 저항성-
公开(公告)号：KR1020080076834A
公开(公告)日：2008-08-20
申请号：KR1020080013937
申请日：2008-02-15
Applicant: 신에쓰 가가꾸 고교 가부시끼가이샤 , 파나소닉 주식회사
IPC: H01L21/31 , H01L21/3205
CPC classification number: H01L21/31695 , C08G77/16 , C08G77/70 , C08G77/80 , C08K3/36 , C08L83/04 , C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/7682 , H01L2221/1047 , Y10T428/249953 , C08L83/00
Abstract: A composition for forming a semiconductor interlayer insulation layer and a manufacturing method thereof, a method for forming the semiconductor interlayer insulation layer, and a semiconductor device are provided to obtain coating solution for forming a new porous layer and to obtain a semiconductor device of high performance and reliability having a porous layer therein. A composition for forming a semiconductor interlayer insulation layer includes silicon oxide group corpuscle and a chemical polysiloxane compound. The chemical polysiloxane compound forms silicon-oxygen-silicon boding between the silicon oxide group corpuscles through condensation during the formation of a layer to improve strength of a framework, which is formed of the silicon oxide group corpuscle. Each of the silicon oxide group corpuscles is a zeolite minute particle with zeolite species crystal. Each of the silicon oxide group corpuscles is a minute silica particle.
Abstract translation: 提供一种用于形成半导体层间绝缘层的组合物及其制造方法，形成半导体层间绝缘层的方法和半导体器件，以获得形成新的多孔层的涂布溶液并获得高性能的半导体器件 以及其中具有多孔层的可靠性。 用于形成半导体层间绝缘层的组合物包括氧化硅基团和化学聚硅氧烷化合物。 化学聚硅氧烷化合物在形成层之间通过冷凝形成硅氧化物团粒之间的硅 - 氧 - 硅，以提高由氧化硅团体形成的骨架的强度。 每个氧化硅团粒子是沸石类晶体的沸石微粒子。 每个氧化硅团粒子是微小的二氧化硅颗粒。
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公开(公告)号：KR100731694B1
公开(公告)日：2007-06-22
申请号：KR1020040085121
申请日：2004-10-23
Applicant: 신에쓰 가가꾸 고교 가부시끼가이샤 , 센트럴가라스 가부시기가이샤 , 파나소닉 주식회사
CPC classification number: G03F7/0397 , C08F216/1408 , C08F220/24 , G03F7/0046 , G03F7/085 , Y10S430/108 , Y10S430/111
Abstract: 파장 200nm이하의 방사선에 대한 투명성, 기판밀착성, 현상액 친화성, 드라이에칭 내성등의 성능이 우수한 감방사선 레지스트용의 베이스수지로서 유용한 신규 함불소 고분자 화합물의 제공.
화학식 1에서 나타나는 반복 단위를 포함하고, 또한 하기 화학식 2a∼2d의 반복 단위를 적어도 1종류 포함하는 고분자 화합물.
(화학식 1)
(R
1 은 불소원자 또는 불소화된 알킬기, R
2 는 단결합, 또는 알킬렌기 또는 불소화된 알킬렌기, R
3 및 R
4 는 수소원자, 불소원자, 또는 알킬기 또는 불소화 알킬기, R
3 및 R
4 의 적어도 한쪽은 하나이상의 불소원자를 포함한다. R
5 는 수소원자 또는 산불안정기, R
6 은 산불안정기, 밀착성기, 또는 알킬기 또는 불소화된 알킬기, a는 1 또는 2이다)
함불소 고분자 화합물, 레지스트, 패턴형성Abstract translation: 透明性，粘附到基底上的辐射具有200nm以下的波长时，显影溶液也可用作一个新的父的基础树脂，耐干式蚀刻性等的辐射的抗蚀剂性能是优良的提供一种氟聚合物的化合物。
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公开(公告)号：KR1020070058352A
公开(公告)日：2007-06-08
申请号：KR1020060120474
申请日：2006-12-01
Applicant: 신에쓰 가가꾸 고교 가부시끼가이샤 , 센트럴가라스 가부시기가이샤 , 파나소닉 주식회사
IPC: C07D313/06 , C08K5/151
CPC classification number: C07D307/93 , C07D409/12 , G03F7/0046 , G03F7/0397
Abstract: Provided is a resist composition which has improved resolution, transparency, minimal line edge roughness, and etch resistance when it is processed by ArF lithography and shows better performance when it is processed by ArF immersion lithography with liquid interposed between a projection lens and a wafer. The ester compound is represented by the formula(1), wherein R^1 is F or a straight or branched fluorinated C1-6 alkyl, R^2 is H or a straight, branched or cyclic C1-8 alkyl, R^3 is O or a straight, branched or cyclic C1-6 alkylene, each R^4 and R^5 is H or a straight, branched or cyclic or fluorinated C1-10 alkyl, and R^6 is H or an acid labile group. The polymer comprises recurring units having the formula(2) and has a weight average molecular weight of 1,000 to 500,000, wherein each R^1 to R^6 is the same as defined above formula(1). The resist composition comprises the polymer. The chemically amplified positive resist composition comprises the polymer, an organic solvent, and a photoacid generator. The method for forming a pattern comprises the steps of: (a) applying the resist composition to a substrate to form a coating; (b) heat-treating the coating, and exposing it to high-energy radiation in a wavelength band of 100 to 250 nm or 1 to 30 nm through a photomask; and (c) optionally heat treating and developing the exposed coating with a developer.
Abstract translation: 提供了当通过ArF光刻处理时具有改进的分辨率，透明度，最小线边缘粗糙度和耐蚀刻性的抗蚀剂组合物，并且当通过ArF浸渍光刻处理介于投影透镜和晶片之间的液体时，表现出更好的性能。 酯化合物由式（1）表示，其中R 1是F或直链或支链氟化C 1-6烷基，R 2是H或直链，支链或环状C 1-8烷基，R 3是 O或直链，支链或环状的C 1-6亚烷基，每个R 4和R 5是H或直链，支链或环状或氟化的C 1-10烷基，R 6是H或酸不稳定基团。 聚合物包含具有式（2）的重复单元，其重均分子量为1,000至500,000，其中每个R 1至R 6与上述式（1）中所定义的相同。 抗蚀剂组合物包含聚合物。 化学放大的正性抗蚀剂组合物包含聚合物，有机溶剂和光致酸产生剂。 形成图案的方法包括以下步骤：（a）将抗蚀剂组合物施加到基底上以形成涂层; （b）对涂层进行热处理，并通过光掩模将其暴露于100至250nm或1至30nm的波长带内的高能量辐射; 和（c）任选地用显影剂热处理和显影曝光的涂层。
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公开(公告)号：KR1020060122773A
公开(公告)日：2006-11-30
申请号：KR1020060047546
申请日：2006-05-26
Applicant: 파나소닉 주식회사 , 센트럴가라스 가부시기가이샤 , 신에쓰 가가꾸 고교 가부시끼가이샤
CPC classification number: G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/111
Abstract: Provided are a polymer compound, a resist material comprising the polymer compound which is excellent in resolution and etching resistance and is reduced in line edge roughness, and a method for forming a pattern by using the resist material. The polymer compound comprises a repeating unit represented by the formula 1 and has a weight average molecular weight of 1,000-500,000, wherein R1 is F or a linear, branched or cyclic C1-C10 fluorinated alkyl group; R2 is a linear, branched or cyclic C1-C10 alkylene group or a linear, branched or cyclic C1-C10 fluorinated alkylene group; and R3 is an acid-labile group. The resist material comprises the polymer compound of the formula 1; an organic solvent; and an acid generator.
Abstract translation: 提供一种聚合物化合物，包含分辨率和耐蚀刻性优异并且线边缘粗糙度降低的聚合物化合物的抗蚀剂材料，以及通过使用抗蚀剂材料形成图案的方法。 高分子化合物包含由式1表示的重均单元，其重均分子量为1,000-500,000，其中R1为F或直链，支链或环状的C1-C10氟化烷基; R2是直链，支链或环状的C1-C10亚烷基或直链，支链或环状的C1-C10氟化亚烷基; R3是酸不稳定基团。 抗蚀剂材料包含式1的高分子化合物; 有机溶剂; 和酸发生剂。
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