公开(公告)号：KR1020140025977A

公开(公告)日：2014-03-05

申请号：KR1020120092785

申请日：2012-08-24

Applicant: 한국전기연구원

Inventor： 김재홍 ,  김정일 ,  전석기 ,  김근주 ,  허두창

IPC: H01L21/822 ,  H01L21/20

Abstract: The present invention relates to a method of fabricating a micro-grid structure using a wafer bonding technique. According to the embodiment of the present invention, the structural deformation of a grid can be prevented. According to the embodiment of the present invention, the penetration ratio of an electron beam can be improved. According to the embodiment of the present invention, a method of fabricating a micro-grid structure is used in a micro-grid gate such as an electron beam discharge device of a triode structure. [Reference numerals] (S10) Form a wafer bonding structure of a SOI structure; (S11) Form a grid structure by using a dry etching technique on a lower substrate; (S12) Form a hole by using a wet etching technique on the other side which is corresponded; (S13) Form a difussion barrier on a wafer; (S14) Form electrodes on the wafer; (S15) Micro-grid element

Abstract translation: 本发明涉及使用晶片接合技术制造微格栅结构的方法。 根据本发明的实施例，可以防止电网的结构变形。 根据本发明的实施例，可以提高电子束的穿透率。 根据本发明的实施例，微电网结构的制造方法用于微电网栅极，例如三极管结构的电子束放电装置。 （附图标记）（S10）形成SOI结构的晶片接合结构; （S11）通过在下基板上使用干蚀刻技术形成栅格结构; （S12）在对应的另一侧使用湿式蚀刻技术形成孔; （S13）在晶片上形成弥散阻挡层; （S14）在晶片上形成电极; （S15）微格栅元件

公开(公告)号：KR1020130075810A

公开(公告)日：2013-07-08

申请号：KR1020110144056

申请日：2011-12-28

Applicant: 한국전기연구원

Inventor： 김재홍 ,  김근주 ,  김정일 ,  전석기 ,  허두창

IPC: H01L21/306 ,  H01L33/00

Abstract: PURPOSE: A method for manufacturing a photonic crystal band-gap element using a wet etching process is provided to utilize a chemical-mechanical polishing (CMP) process, thereby easily manufacturing the element. CONSTITUTION: A method for manufacturing a photonic crystal band-gap element using a wet etching process includes: a step (105) of bonding two wafers with a metal layer; a step (110) of implementing a chemical-mechanical polishing (CMP) process on the upper wafer, and adjusting the thickness of the upper wafer; a step (120) of forming a mask pattern using a photosensitive etching mask; and a step (125) of implementing a wet etching process on the mask pattern. [Reference numerals] (105) Wafer bonding; (110) Chemical-mechanical polishing; (115) Photonic crystal structure compensating circuit construction; (120) Pattern formation; (125) Preparation through a wet etch process; (AA) Start; (BB) End

Abstract translation: 目的：提供使用湿式蚀刻工艺制造光子晶体带隙元件的方法，以利用化学机械抛光（CMP）工艺，从而容易地制造元件。 构成：使用湿蚀刻工艺制造光子晶体带隙元件的方法包括：将两个晶片与金属层接合的步骤（105）; 在上晶片上实施化学机械抛光（CMP）工艺的步骤（110），并调节上晶片的厚度; 使用光敏蚀刻掩模形成掩模图案的步骤（120）; 以及在掩模图案上实施湿蚀刻工艺的步骤（125）。 （附图标记）（105）晶片接合; （110）化学机械抛光; （115）光子晶体结构补偿电路结构; （120）图案形成; （125）通过湿蚀刻工艺制备; （AA）开始; （BB）结束

公开(公告)号：KR101264099B1

公开(公告)日：2013-05-14

申请号：KR1020110067335

申请日：2011-07-07

Applicant: 한국전기연구원

Inventor： 김근주 ,  김재홍 ,  김정일 ,  전석기

IPC: H01L21/66

Abstract: 본발명은다중접합반도체의공극검사장치및 방법에관한것이다. 보다상세하게는전자기파를이용하여다중접합반도체의제조과정에서실시간으로다중접합반도체에대한공극검사가가능한다중접합반도체의공극검사장치및 방법에관한것이다. 본발명은다중접합반도체의공극검사장치에있어서, 테라헤르츠광을발생시켜하부에배치된상기다중접합반도체측으로조사하는광원; 상기광원과상기다중접합반도체사이에배치되어상기광원으로부터조사되는테라헤르츠광을균일하게상기다중접합반도체측으로조사하는평행광조사부; 상기다중접합반도체하부에배치되어상기다중접합반도체를투과한테라헤르츠광을집속하는광 집속부; 및상기광 집속부에서집속된테라헤르츠광을검출하는제1 광검출부를포함하는것을특징으로한다. 본발명에의하면테라헤르츠파를이용하여다중접합반도체에대한공극검사를수행하므로수중검사가불필요하여실시간으로다중접합반도체에대한전수검사가가능함과동시에공기에대한투과가가능하므로공극이후에대한검사또한가능한효과를갖는다.

公开(公告)号：KR101214450B1

公开(公告)日：2012-12-21

申请号：KR1020110096249

申请日：2011-09-23

Applicant: 한국전기연구원

Inventor： 김정일 ,  김근주 ,  김재홍 ,  전석기

IPC: H01J25/02

Abstract: PURPOSE: A vacuum electronic device is provide to increase intensity of an electric field by locating a slow wave lattice circuit inside a rectangular waveguide, thereby enhancing the efficiency of the electromagnetic waves. CONSTITUTION: A cross section of a slow wave circuit(34) is arranged inside a rectangular waveguide. The cross section of the slow wave circuit is in an inverted triangle shape. An output unit hole is perpendicular to the lower side of an electronic beam input hole. Electronic beams proceed to the electronic beam focusing part(33) passing over the metal gratings, which induces an electric field. An output unit(35) is formed in the lower part of the input hole to be perpendicular to the electronic beams moving area.

Abstract translation: 目的：提供一种真空电子装置，通过将矩形波导内的慢波晶格电路定位来提高电场强度，从而提高电磁波的效率。 构成：慢波电路（34）的横截面布置在矩形波导内。 慢波电路的横截面呈倒三角形。 输出单元孔垂直于电子束输入孔的下侧。 电子束进入通过金属光栅的电子束聚焦部分（33），这引起电场。 输入单元（35）形成在输入孔的下部，以垂直于电子束移动区域。