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公开(公告)号：KR1020060064971A
公开(公告)日：2006-06-14
申请号：KR1020040103668
申请日：2004-12-09
Applicant: 한국전자통신연구원
IPC: H01L21/31
CPC classification number: H01L21/28185 , H01L21/02142 , H01L21/0228
Abstract: 본 발명은 반도체 트랜지스터의 게이트 절연막 및 그 제조방법에 관한 것으로, 보다 상세하게는 기판 상에 형성된 완충층과, 상기 완충층의 상부에 형성된 반도체층과, 상기 반도체층의 상부에 형성되며, 적어도 하나의 층을 가지는 알루미늄-실리케이트층을 포함함으로써, 제어 불가능한 계면 산화막을 감소시켜 소자의 전기적 특성을 향상시킬 수 있으며, 실시간으로 조성 기울기를 갖는 단일막 형성이 가능하므로 유전상수를 비롯한 여러 변인들을 효율적으로 제어할 수 있는 효과가 있다.
반도체 트랜지스터, 게이트 절연막, 알루미늄-실리케이트층, 완충층, 반도체층, 플라즈마 원자층 증착(PEALD)-
公开(公告)号：KR1020040105423A
公开(公告)日：2004-12-16
申请号：KR1020030036796
申请日：2003-06-09
Applicant: 한국전자통신연구원
IPC: H01L21/31
CPC classification number: H01L21/6835 , B81C1/00896 , H01L21/4803 , H01L21/4814 , H01L2221/68318 , H01L2221/68345
Abstract: PURPOSE: A substrate having a micro structure and a fabricating method thereof are provided to reduce effectively stress in a semiconductor fabrication process by forming an air gap between a top substrate and a bottom substrate. CONSTITUTION: A bottom substrate(11) is used for supporting a top substrate(13) on which a device is formed during a device fabrication process. The bottom substrate is separated from the top substrate after the device fabrication process. A buffer layer(14) is patterned to include a plurality of forming layers for forming air gaps in a predetermined interval on an upper surface of the bottom substrate. An adhesion layer(12) is used for adhering the top substrate to the buffer layer.
Abstract translation: 目的：提供具有微结构的基板及其制造方法，以通过在顶部基板和底部基板之间形成气隙来有效地减少半导体制造工艺中的应力。 构成：在器件制造过程中，底部衬底（11）用于支撑其上形成器件的顶部衬底（13）。 在器件制造过程之后，底部衬底与顶部衬底分离。 缓冲层（14）被图案化以包括用于在底部衬底的上表面上以预定间隔形成气隙的多个形成层。 使用粘合层（12）将顶部基板粘附到缓冲层。
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公开(公告)号：KR1020040035393A
公开(公告)日：2004-04-29
申请号：KR1020020064524
申请日：2002-10-22
Applicant: 한국전자통신연구원
IPC: H01L21/20
CPC classification number: H01L21/0228 , C23C16/308 , C23C16/45529 , C23C16/45542 , C23C16/50 , H01L21/02175 , H01L21/02274 , H01L21/3145 , H01L21/31616
Abstract: PURPOSE: A method for forming an oxide layer containing nitrogen using a PEALD(Plasma Enhanced Atomic Layer Deposition) method is provided to enhance an electrical characteristic and an insulating characteristic by forming the oxide layer containing nitrogen. CONSTITUTION: A method for forming an oxide layer containing nitrogen using a PEALD method includes a first plasma generation process and a second plasma supply process. The first plasma generation process is to generate plasma on a substrate in proportional to a supply period of oxygen gas. The second plasma supply process is to generate the plasma on the substrate in proportional to a supply period of gas containing nitrogen. The oxygen gas and the gas containing nitrogen are simultaneously supplied in the same period.
Abstract translation: 目的：提供使用PEALD（等离子增强原子层沉积）方法形成含氮的氧化物层的方法，以通过形成含氮的氧化物层来增强电特性和绝缘特性。 构成：使用PEALD方法形成含氮的氧化物层的方法包括第一等离子体生成工艺和第二等离子体供应工艺。 第一等离子体产生过程是在氧气的供给周期内与衬底产生等离子体。 第二等离子体供应过程是在与含氮气体的供应周期成比例地在衬底上产生等离子体。 在同一时期同时供给氧气和含氮气体。
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公开(公告)号：KR1020030080312A
公开(公告)日：2003-10-17
申请号：KR1020020018878
申请日：2002-04-08
Applicant: 한국전자통신연구원
IPC: H01L29/737
Abstract: PURPOSE: A method for forming a substrate for manufacturing an SiGe/Si HFET(Hetero-junction Field Effect Transistor) and the substrate thereof are provided to be capable of obtaining a thin buffer layer having good device characteristics by carrying out an in-situ heat treatment. CONSTITUTION: After forming the first silicon germanium layer(12) having an inhomogeneous germanium constitution on a silicon epitaxial layer(10), a heat treatment is carried out at the resultant structure by in-situ. Then, the second silicon germanium layer(14) having a homogeneous germanium, is formed on the resultant structure. A silicon cap layer(16) is formed on the second silicon germanium layer. At the time, the first and second silicon germanium layer are used as a buffer layer.
Abstract translation: 目的：提供一种用于形成用于制造SiGe / SiHFET（异质结场效应晶体管）的衬底及其衬底的方法，以便能够通过进行原位热来获得具有良好器件特性的薄缓冲层 治疗。 构成：在硅外延层（10）上形成具有不均匀锗构成的第一硅锗层（12）之后，通过原位进行热处理。 然后，在所得结构上形成具有均匀锗的第二硅锗层（14）。 在第二硅锗层上形成硅封层（16）。 此时，第一和第二硅锗层用作缓冲层。
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公开(公告)号：KR1020030021023A
公开(公告)日：2003-03-12
申请号：KR1020010054453
申请日：2001-09-05
Applicant: 한국전자통신연구원
IPC: H01L21/20
Abstract: PURPOSE: A method for forming a silicon film, a germanium film, and a silicon-germanium film using an atomic layer epitaxy method are provided to form a thin film under a low temperature by using an organic gas as a source gas. CONSTITUTION: SiR4 is injected into a process chamber during a predetermined time(30). The first purge process is performed by injecting a purging gas into the process chamber(31). GeH4 is injected into the process chamber during the predetermined time(32). The second purge process is performed by injecting the purging gas into the process chamber(33). The injection of hydrogen radicals or hydrogen ions is determined according to a composition ratio of silicon-germanium(34). The hydrogen radicals or hydrogen ions are injected into the process chamber(35). The third purge process is performed(36). The thickness of the silicon-germanium is checked(37).
Abstract translation: 目的：提供使用原子层外延法形成硅膜，锗膜和硅锗膜的方法，通过使用有机气体作为源气体在低温下形成薄膜。 构成：SiR4在预定时间（30）内被注入到处理室中。 通过将净化气体注入到处理室（31）中来进行第一吹扫处理。 GeH4在预定时间（32）内被注入到处理室中。 通过将净化气体注入到处理室（33）中来进行第二吹扫处理。 根据硅 - 锗的组成比（34）确定氢根或氢离子的注入。 将氢根或氢离子注入到处理室（35）中。 执行第三次净化处理（36）。 检查硅锗的厚度（37）。
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Patent Agency Ranking
公开(公告)号：KR1020170089388A
公开(公告)日：2017-08-03
申请号：KR1020160090247
申请日：2016-07-15
Applicant: 한국전자통신연구원
IPC: H01L29/49 , H01L21/768 , H01L27/02 , H01L29/417
Abstract: 본발명은트랜지스터를개시한다. 트랜지스터는서로이격하여배치된복수개의전극들과, 전극들사이에배치되고, 전극들과분리된게이트전극, 게이트전극의위 또는아래의전극들사이에연결된하부채널층, 하부채널층 상에배치되고, 상기하부채널층의에너지밴드갭과다른에너지밴드갭을갖는상부채널층, 그리고상기상부채널층과하부채널층 사이에배치되고, 상부채널층의에너지밴드갭과, 하부채널층의에너지밴드갭 사이의에너지밴드갭을갖는중간채널층을포함한다.
Abstract translation: 本发明公开了一种晶体管。 晶体管被布置在电极和彼此分开布置的多个电极之间，与电极分开的栅电极，所述沟道层下方的栅电极被连接在上部电极或底部之间，设置在下沟道层上 并且，具有能带隙和不同能带隙的层，并且其中，所述上通道层和设置在层之间的底部通道上通道的下部的沟道层的上沟道层的能带隙的能带中，下信道层 以及在间隙之间具有能带隙的中间沟道层。
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公开(公告)号：KR1020160103499A
公开(公告)日：2016-09-01
申请号：KR1020150178462
申请日：2015-12-14
Applicant: 한국전자통신연구원
Abstract: 본발명은투명기판; 상기투명기판상의투명발열층; 및상기투명발열층 상에배치되어, 상기투명발열층과전기적으로연결되는전극을포함하고, 상기투명발열층은: 상기투명기판상에배치되고, 상기전극으로부터외부전원을공급받아발열하는금속층; 및상기투명기판상에배치되고, 광의적외선영역중 적어도일부의파장영역을차단하고, 상기광의일부파장영역을투과하는선택적투과층을포함하는투명면상발열체에관한것이다.
Abstract translation: 本发明涉及一种透明平面加热器。 透明平面加热器包括透明基板; 透明基板上的透明加热层; 和布置在透明加热层上并与透明加热层电连接的电极。 透明加热层包括布置在透明基板上并接收来自电极的外部电力以产生热量的金属层; 以及布置在所述透明基板上的选择性透射层，阻挡所述红外范围中的波长范围的至少一部分，并且透射所述光的波长范围的一部分。 因此，可以提高发热的均匀性。
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公开(公告)号：KR1020150055168A
公开(公告)日：2015-05-21
申请号：KR1020130136387
申请日：2013-11-11
Applicant: 한국전자통신연구원
IPC: H01L31/04
CPC classification number: H01L31/0549 , H01L31/03762 , H01L31/056 , H01L31/06 , Y02E10/52 , Y02E10/548
Abstract: 본발명의실시예에따른실리콘태양전지는제 1 전극, 상기제 1 전극상에배치된하부광 흡수층, 상기하부광 흡수층상에배치된상부광 흡수층; 및상기하부광 흡수층과상기상부광 흡수층사이에제공된중간반사층을포함하되, 상기중간반사층은구리산화물을포함한다.
Abstract translation: 根据本发明实施例的硅太阳能电池包括第一电极，布置在第一电极上的底部光吸收层，设置在底部光吸收层上的顶部光吸收层和中间反射层 其设置在底部光吸收层和顶部光吸收层之间。 中间反射层包括氧化铜。
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公开(公告)号：KR1020150024230A
公开(公告)日：2015-03-06
申请号：KR1020140002921
申请日：2014-01-09
Applicant: 한국전자통신연구원
IPC: H01L31/056
CPC classification number: Y02E10/52
Abstract: 본 발명은 투명 태양전지 및 그를 구비하는 후면 반사 투명 태양전지 모듈을 개시한다. 투명 태양전지는, 투명 기판과, 상기 투명 기판 상의 제 1 투명 전극과, 상기 제 1 투명 전극 상의 광 흡수 층과, 상기 광 흡수 층 상의 재흡수 증진 층과, 상기 재흡수 증진 층 상의 제 2 투명 전극을 포함한다.
Abstract translation: 公开了具有高耐久性和生产率的透明太阳能电池和具有该透明太阳能电池的背面反射透明太阳能电池组件。 透明太阳能电池包括：透明基板; 形成在所述透明基板上的第一透明电极; 形成在第一透明电极上的光吸收层; 形成在所述光吸收层上的再吸收增强层; 以及形成在再吸收增强层上的第二透明电极。
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公开(公告)号：KR1020130130370A
公开(公告)日：2013-12-02
申请号：KR1020120054133
申请日：2012-05-22
Applicant: 한국전자통신연구원
IPC: H01L31/042
CPC classification number: Y02E10/50 , H01L31/042
Abstract: A solar cell according to an embodiment of the present invention comprises; first and second electrodes which are provided to a substrate and face each other; a light absorption layer placed between the first and second electrodes; and a light conversion layer which converts light of short wavelength inserted towards the light absorption layer into light of long wavelength by being provided on the substrate and is processed by plasma. The light of the short wavelength is firstly inserted into the light conversion layer than the light absorption layer. An incident component of sunlight is able to be changed into a penetration component of long wavelength by the light conversion layer. A wavelength area of the penetration component is controlled by the control of plasma manufacturing process variable. The longer the wavelength becomes, the more the rate which is lost in an electrode becomes low. Therefore, the efficiency of the solar cell is increased. The light conversion layer according to the present invention is used for all kinds of solar cells.
Abstract translation: 根据本发明实施例的太阳能电池包括： 第一和第二电极，设置在基板上并彼此面对; 放置在第一和第二电极之间的光吸收层; 以及光转换层，其通过设置在基板上而将通过设置在光吸收层上的短波长的光转换成长波长的光，并通过等离子体进行处理。 首先将短波长的光插入光转换层中而不是光吸收层。 太阳光的入射成分能够通过光转换层变成长波长的穿透成分。 通过等离子体制造过程变量的控制来控制穿透部件的波长区域。 波长越长，电极损失的速率就越低。 因此，提高了太阳能电池的效率。 根据本发明的光转换层用于各种太阳能电池。
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