ANTENNAS MOUNTED UNDER DIELECTRIC PLATES.

    公开(公告)号:NL2007283C2

    公开(公告)日:2012-02-28

    申请号:NL2007283

    申请日:2011-08-19

    Applicant: APPLE INC

    Abstract: Electronic devices are provided that contain wireless communications circuitry. The wireless communications circuitry may include radio-frequency transceiver circuitry and antenna structures. The antenna structures may include antennas such as inverted-F antennas that contain antenna resonating elements and antenna ground elements. Antenna resonating elements may be formed from patterned conductive traces on substrates such as flex circuit substrates. Antenna ground elements may be formed from conductive device structures such as metal housing walls. Support and biasing structures such as dielectric support members and layer of foam may be used to support and bias antenna resonating elements against planar device structures. The planar device structures against which the antenna resonating elements are biased may be planar dielectric members such as transparent layers of display cover glass or other planar structures. Adhesive may be interposed between the planar structures and the antenna resonating elements.

    CAVITY-BACKED ANTENNA FOR TABLET DEVICE

    公开(公告)号:CA2770447A1

    公开(公告)日:2011-03-10

    申请号:CA2770447

    申请日:2010-06-22

    Applicant: APPLE INC

    Abstract: An electronic device may have a cavity antenna. The cavity antenna may have a logo-shaped dielectric window. An antenna resonating element for the cavity antenna may be formed from conductive traces on a printed circuit board. An antenna resonating element may be formed from the traces. The antenna resonating element may be mounted on an antenna support structure. A conductive cavity structure for the cavity antenna may have a planar lip that is mounted flush with an interior surface of a conductive housing wall. The cavity structure may have more than one depth. Shallower planar portions of the cavity structure may lie in a plane. The antenna resonating element may be located between the plane of the shallow cavity walls and an external surface of the conductive housing wall.

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