公开(公告)号：US20200343089A1

公开(公告)日：2020-10-29

申请号：US16787672

申请日：2020-02-11

Applicant: ASM IP Holding B.V.

Inventor： Han Wang ,  Qi Xie ,  Delphine Longrie ,  Jan Willem Maes ,  David de Roest ,  Julian Hsieh ,  Chiyu Zhu ,  Timo Asikainen

IPC: H01L21/02 ,  H01L21/283 ,  H01L21/311

Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

公开(公告)号：US20200291511A1

公开(公告)日：2020-09-17

申请号：US16676017

申请日：2019-11-06

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC: C23C16/02 ,  C23C16/06 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/768 ,  H01L21/285

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20200266096A1

公开(公告)日：2020-08-20

申请号：US16773064

申请日：2020-01-27

Applicant: ASM IP Holding B.V.

Inventor： Han Wang ,  Qi Xie ,  Delphine Longrie ,  Jan Willem Maes ,  David de Roest ,  Julian Hsieh ,  Chiyu Zhu ,  Timo Asikainen ,  Krzysztof Kachel ,  Harald Profijt

IPC: H01L21/768 ,  C23C16/56 ,  C23C16/34 ,  C23C16/04 ,  C23C16/455 ,  C23C16/00 ,  H01L21/311 ,  H01L21/02 ,  H01L23/532

Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

公开(公告)号：US10566185B2

公开(公告)日：2020-02-18

申请号：US14819274

申请日：2015-08-05

Applicant: ASM IP Holding B.V.

Inventor： Han Wang ,  Qi Xie ,  Delphine Longrie ,  Jan Willem Maes ,  David de Roest ,  Julian Hsieh ,  Chiyu Zhu ,  Timo Asikainen

IPC: H01L21/02 ,  H01L21/283 ,  H01L21/311

Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

公开(公告)号：US10553482B2

公开(公告)日：2020-02-04

申请号：US16158780

申请日：2018-10-12

Applicant: ASM IP Holding B.V.

Inventor： Han Wang ,  Qi Xie ,  Delphine Longrie ,  Jan Willem Maes ,  David de Roest ,  Julian Hsieh ,  Chiyu Zhu ,  Timo Asikainen ,  Krzysztof Kachel ,  Harald Profijt

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L23/532 ,  C23C16/00

Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

公开(公告)号：US20200013626A1

公开(公告)日：2020-01-09

申请号：US16517122

申请日：2019-07-19

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  David Kurt De Roest

IPC: H01L21/285 ,  C23C16/04 ,  H01L21/48 ,  C23C16/455 ,  C23C16/06 ,  H01L21/768 ,  H01L21/3205 ,  H01L21/28 ,  H01L21/3065

Abstract: A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US10480064B2

公开(公告)日：2019-11-19

申请号：US16040844

申请日：2018-07-20

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC: C23C16/02 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  C23C16/06 ,  C23C16/34 ,  C23C16/44 ,  C23C16/56

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20190103303A1

公开(公告)日：2019-04-04

申请号：US16158780

申请日：2018-10-12

Applicant: ASM IP Holding B.V.

Inventor： Han Wang ,  Qi Xie ,  Delphine Longrie ,  Jan Willem Maes ,  David de Roest ,  Julian Hsieh ,  Chiyu Zhu ,  Timo Asikainen ,  Krzysztof Kachel ,  Harald Profijt

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  C23C16/00 ,  H01L23/532

CPC classification number: H01L21/7685 ,  C23C16/00 ,  C23C16/04 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/56 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76834 ,  H01L21/76897 ,  H01L23/53266

Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

公开(公告)号：US20190055643A1

公开(公告)日：2019-02-21

申请号：US16040844

申请日：2018-07-20

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC: C23C16/02 ,  C23C16/44 ,  C23C16/06 ,  H01L21/768 ,  C23C16/455 ,  H01L21/285 ,  C23C16/56 ,  C23C16/34

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

公开(公告)号：US20180080121A1

公开(公告)日：2018-03-22

申请号：US15795768

申请日：2017-10-27

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  Antti Juhani Niskanen ,  Han Wang ,  Qi Xie ,  Jan Willem Maes ,  Shang Chen ,  Toshiharu Watarai ,  Takahiro Onuma ,  Dai Ishikawa ,  Kunitoshi Namba

IPC: C23C16/02 ,  C23C16/455 ,  H01L21/768 ,  H01L21/285

CPC classification number: C23C16/02 ,  C23C16/06 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/7685

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.