公开(公告)号：US11101185B2

公开(公告)日：2021-08-24

申请号：US16720393

申请日：2019-12-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Adriaan Johan Van Leest ,  Anagnostis Tsiatmas ,  Paul Christiaan Hinnen ,  Elliott Gerard McNamara ,  Alok Verma ,  Thomas Theeuwes ,  Hugo Augustinus Joseph Cramer

IPC: H01L21/66 ,  G03F7/20 ,  G03F9/00 ,  G01N21/95

Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.

公开(公告)号：US10474039B2

公开(公告)日：2019-11-12

申请号：US15384084

申请日：2016-12-19

Applicant: ASML Netherlands B.V.

Inventor： Paul Christiaan Hinnen ,  Simon Gijsbert Josephus Mathijssen ,  Maikel Robert Goosen ,  Maurits Van Der Schaar ,  Arie Jeffrey Den Boef

IPC: G03B27/34 ,  G03F7/20

Abstract: A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation (404) incident at an oblique angle (θ). The focus metrology pattern comprises a periodic array of groups of first features (422). A spacing (S1) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second features 424 may be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.

公开(公告)号：US20190258177A1

公开(公告)日：2019-08-22

申请号：US16264755

申请日：2019-02-01

Applicant: ASML Netherlands B.V.

Inventor： Hugo Augustinus Joseph CRAMER ,  Seyed Iman Mossavat ,  Paul Christiaan Hinnen

IPC: G03F7/20

Abstract: Disclosed is method of optimizing bandwidth of measurement illumination for a measurement application, and an associated metrology apparatus. The method comprises performing a reference measurement with reference measurement illumination having a reference bandwidth and performing one or more optimization measurements, each of said one or more optimization measurements being performed with measurement illumination having a varied candidate bandwidth. The one or more optimization measurements are compared with the reference measurement; and an optimal bandwidth for the measurement application is selected based on the comparison.

公开(公告)号：US10054862B2

公开(公告)日：2018-08-21

申请号：US15179509

申请日：2016-06-10

Applicant: ASML Netherlands B.V.

Inventor： Anton Bernhard Van Oosten ,  Paul Christiaan Hinnen ,  Robertus Cornelis Martinus De Kruif ,  Robert John Socha

IPC: G03F7/20 ,  G03F1/44

CPC classification number: G03F7/70558 ,  G03F1/44 ,  G03F7/70516 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70641

Abstract: Disclosed is a method of monitoring a focus parameter during a lithographic process. The method comprises acquiring first and second measurements of, respectively first and second targets, wherein the first and second targets have been exposed with a relative best focus offset. The method then comprises determining the focus parameter from first and second measurements. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.

公开(公告)号：US20150293458A1

公开(公告)日：2015-10-15

申请号：US14648445

申请日：2013-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Clement Paul Vanoppen ,  Eric Jos Anton Brouwer ,  Hugo Augustinus Joseph Cramer ,  Jan Hendrik Den Besten ,  Adrianus Franciscus Petrus Engelen ,  Paul Christiaan Hinnen

IPC: G03F7/20 ,  G01N21/47

CPC classification number: G03F7/70058 ,  G01N21/4738 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

Abstract: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate. Using the lithographic process to produce a first structure on the substrate, the first structure having a dose-sensitive feature which has a form that depends on exposure dose of the lithographic apparatus on the substrate. Using the lithographic process to produce a second structure on the substrate, the second structure having a dose-sensitive feature which has a form that depends on the exposure dose of the lithographic apparatus but which has a different sensitivity to the exposure dose than the first structure. Detecting scattered radiation while illuminating the first and second structures with radiation to obtain first and second scatterometer signals. Using the first and second scatterometer signals to determine an exposure dose value used to produce at least one of the first and second structures.

Abstract translation: 一种确定在光刻工艺中使用的光刻设备在衬底上的曝光剂量的方法。 使用光刻工艺在衬底上产生第一结构，第一结构具有剂量敏感特征，其具有取决于光刻设备在衬底上的曝光剂量的形式。 使用光刻工艺在衬底上产生第二结构，第二结构具有剂量敏感特征，其具有取决于光刻设备的曝光剂量但与第一结构具有不同于曝光剂量的灵敏度的形式 。 检测散射辐射，同时用辐射照射第一和第二结构，以获得第一和第二散射仪信号。 使用第一和第二散射仪信号来确定用于产生第一和第二结构中的至少一个的曝光剂量值。