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公开(公告)号：EP4394512A1
公开(公告)日：2024-07-03
申请号：EP22216705.8
申请日：2022-12-27
Applicant: ASML Netherlands B.V.
Inventor： STAALS, Frank
IPC: G03F7/20
CPC classification number: G03F7/70125 , G03F7/70441 , G03F7/70891 , G03F7/705
Abstract: Source mask optimization (SMO) is described. The SMO comprises determining a source configuration (e.g., an illumination pupil) of the lithographic apparatus for first features in a first layer of a pattern based on systematic effects on the lithographic apparatus components that cause feature dependent imaging performance changes for second features in a second layer of the pattern. The systematic effects on the lithographic apparatus components comprise mirror heating, for example. Mirror heating based SMO is performed for a first layer's illumination pupil with a cost function for second layer's performance. For example, mirror heating based SMO may be performed to generate a metal layer illumination pupil that creates less mirror heating impact to a subsequent via layer exposure, and/or mirror heating based SMO may be performed to generate a via layer illumination pupil that is less sensitive to mirror heating caused by a prior metal layer exposure, as representative examples.
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42.发明公开
公开(公告)号：EP3579052A1
公开(公告)日：2019-12-11
申请号：EP18176718.7
申请日：2018-06-08
Applicant: ASML Netherlands B.V.
Inventor： TRIPODI, Lorenzo , HAJIAHMADI, Mohammadreza , FARHADZADEH, Farzad , TINNEMANS, Patricius Aloysius Jacobus , MIDDLEBROOKS, Scott Anderson , KOOPMAN, Adrianus Cornelis Matheus , STAALS, Frank , PETERSON, Brennan , VAN OOSTEN, Anton Bernhard
IPC: G03F7/20
Abstract: Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.
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公开(公告)号：EP3547029A1
公开(公告)日：2019-10-02
申请号：EP18164962.5
申请日：2018-03-29
Applicant: ASML Netherlands B.V.
Inventor： ALTINI, Valerio , STAALS, Frank
Abstract: Disclosed is a method for controlling a scanning exposure apparatus configured for scanning an illumination profile over a substrate to form functional areas thereon. The method comprises determining a control profile for dynamic control of the illumination profile during exposure of an exposure field comprising the functional areas, in a scanning exposure operation; and optimizing a quality of exposure of individual functional areas. The optimizing may comprise a) extending the control profile beyond the extent of the exposure field in the scanning direction; and/or b) applying a deconvolution scheme to the control profile, wherein the structure of the deconvolution scheme is based on a dimension of the illumination profile in the scanning direction.
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公开(公告)号：EP3523698A1
公开(公告)日：2019-08-14
申请号：EP18727761.1
申请日：2018-05-23
Applicant: ASML Netherlands B.V.
Inventor： HARUTYUNYAN, Davit , JIA, Fei , STAALS, Frank , WANG, Fuming , LOOIJESTIJN, Hugo, Thomas , RIJNIERSE, Cornelis, Johannes , PISARENCO, Maxim , WERKMAN, Roy , THEEUWES, Thomas , VAN HEMERT, Tom , BASTANI, Vahid , WILDENBERG, Jochem, Sebastiaan , MOS, Everhardus, Cornelis , WALLERBOS, Erik, Johannes, Maria
IPC: G03F7/20 , G05B13/04 , G05B19/418 , H01L21/66
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公开(公告)号：EP3339958A1
公开(公告)日：2018-06-27
申请号：EP16206235.0
申请日：2016-12-22
Applicant: ASML Netherlands B.V.
Inventor： MOS, Everhardus Cornelis , WILDENBERG, Jochem Sebastiaan , WALLERBOS, Erik, Johannes Maria , VAN DER SCHAAR, Maurits , STAALS, Frank
IPC: G03F7/20
CPC classification number: G03F7/70525 , G03F7/70616 , G03F7/70625
Abstract: A method for improving the yield of a lithographic process, the method comprising:
determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter;
determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and
determining a probability metric associated with the probability of the performance parameter being outside an allowable range.
Optionally a correction to the lithographic process is determined based on the probability metric.-
Patent Agency Ranking
公开(公告)号：EP2142961A2
公开(公告)日：2010-01-13
申请号：EP08741685.5
申请日：2008-04-29
Applicant: ASML Netherlands B.V.
Inventor： STAALS, Frank , LOF, Joeri , LOOPSTRA, Erik, Roelof , TEL, Wim, Tjibbo , MOEST, Bearrach
CPC classification number: G03F7/7085 , G03F7/70341 , G03F7/70483 , G03F9/7088
Abstract: The invention relates to an image for detection of an aerial pattern comprising spatial differences in radiation intensity in a cross section of a beam of radiation in a lithographic apparatus for exposing a substrate. The image sensor comprises a lens (5) arranged to form a detection image of the aerial pattern and an image detector (6) arranged to measure radiation intensities in a plurality, of positions in the detection image.
Abstract translation: 本发明涉及一种用于检测天线图案的图像，其包括用于曝光基板的光刻设备中的辐射束的横截面中的辐射强度的空间差异。 图像传感器包括布置成形成天线图案的检测图像的透镜（5）和布置成测量检测图像中的多个位置中的辐射强度的图像检测器（6）。
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47.发明公开
公开(公告)号：EP3798729A1
公开(公告)日：2021-03-31
申请号：EP19199804.6
申请日：2019-09-26
Applicant: ASML Netherlands B.V.
Inventor： STAALS, Frank
IPC: G03F7/20
Abstract: Disclosed is a method of inferring a value for a first processing parameter of a lithographic process, the first processing parameter being subject to a coupled dependency of a second processing parameter. The method comprises determining a first metric and a second metric from measurement data, each of the first metric and second metric being dependent on both the first processing parameter and second processing parameter The first metric shows a stronger dependence to the first processing parameter than the second processing parameter and the second metric shows a stronger dependence to the second processing parameter than the first processing parameter. The value for the first processing parameter is inferred from said first metric and second metric.
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48.发明公开
公开(公告)号：EP3598235A1
公开(公告)日：2020-01-22
申请号：EP18184163.6
申请日：2018-07-18
Applicant: ASML Netherlands B.V.
Inventor： GARCIA GRANDA, Miguel , STEEN, Steven Erik , BROUWER, Eric Jos Anton , SEGERS, Bart Peter Bert , GUITTET, Pierre-Yves Jerome Yvan , STAALS, Frank , VAN ADRICHEM, Paulus Jacobus Maria
Abstract: Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.
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公开(公告)号：EP3583467A1
公开(公告)日：2019-12-25
申请号：EP18700091.4
申请日：2018-01-03
Applicant: ASML Netherlands B.V.
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公开(公告)号：EP3495888A1
公开(公告)日：2019-06-12
申请号：EP17205643.4
申请日：2017-12-06
Applicant: ASML Netherlands B.V.
Inventor： STAALS, Frank
IPC: G03F7/20
Abstract: Disclosed is a method for controlling a lithographic apparatus, and associated apparatuses. The method is configured to provide product structures to a substrate in a lithographic process and comprises determining optimization data. The optimization data comprises measured and/or simulated data of at least one performance parameter associated with the product structures and/or their arrangement which are to be applied to the substrate in the lithographic process. Substrate specific metrology data as measured and/or modeled before the providing of product structures to the substrate is determined, the substrate specific metrology data comprising metrology data relating to a characteristic of the substrate to which the structures are being applied and/or the state of the lithographic apparatus at the time that the structures are applied to the substrate. The method further includes optimizing control of the lithographic apparatus during the lithographic process based on said optimization data and the substrate specific metrology data.
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