公开(公告)号：AU2004201229A1

公开(公告)日：2004-10-14

申请号：AU2004201229

申请日：2004-03-24

Applicant: CANON KK

Inventor： SANO MASAFUMI ,  NAKAMURA TETSURO

IPC: H01L31/04 ,  C25D9/04 ,  H01L31/052 ,  H01L31/18

Abstract: There is disclosed a method of producing a photovoltaic device, characterized in that it includes steps of: a step of forming a zinc oxide layer on a substrate at least by electrolytic deposition; subjecting the zinc oxide layer to any one treatment selected from the group consisting of plasma treatment with a rare gas or nitrogen gas, ion irradiation, light irradiation and electromagnetic irradiation; and forming on the zinc oxide layer a semiconductor layer that are made up of a non-single crystal silicon material containing hydrogen and have at least one p-i-n junction.

公开(公告)号：DE69330990D1

公开(公告)日：2001-11-29

申请号：DE69330990

申请日：1993-11-11

Applicant: CANON KK

Inventor： SAITO KEISHI ,  AOIKE TATSUYUKI ,  SANO MASAFUMI ,  NIWA MITSUYUKI ,  HAYASHI RYO ,  TONOGAKI MASAHIKO

IPC: H01L31/04 ,  H01L31/052 ,  H01L31/065 ,  H01L31/075 ,  H01L31/20

Abstract: An object of the present invention is to provide a photoelectrical conversion device in which re-combination of carriers excited by light is prevented and the open voltage and the carrier range of positive holes are improved and to provide a generating system using the photoelectrical conversion device. The photoelectrical conversion device includes a p-layer, an i-layer, and an n-layer, wherein the photoelectrical conversion device being formed by stacking the p-layer, the i-layer and the n-layer each of which is made of non-single-crystal silicon semiconductor, the i-layer contains germanium atoms, the band gap of the i-layer is smoothly changed in a direction of the thickness of the i-layer, the minimum value of the band gap is positioned adjacent to the p-layer from the central position of the i-layer and both of a valence control agent to serve as a donor and another valence control agent to serve as an acceptor are doped into the i-layer. Further, at least either of the p-layer or the n-layer is formed into a stacked structure consisting of a layer mainly composed of group III elements of the periodic table and/or group V elements of the same and a layer containing the valence control agent and mainly composed of silicon atoms.

公开(公告)号：DE69329328T2

公开(公告)日：2001-02-22

申请号：DE69329328

申请日：1993-11-15

Applicant: CANON KK

Inventor： SAITO KEISHI ,  AOIKE TATSUYUKI ,  SANO MASAFUMI ,  NIWA MITSUYUKI ,  HAYASHI RYO ,  TONOGAKI MASAHIKO

IPC: H01L31/0392 ,  H01L31/052 ,  H01L31/065 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

Abstract: The present invention is directed to provide a photovoltaic element in which the open-circuit voltage and the carrier range of holes are improved by preventing the recombination of photoexcited carriers. The photovoltaic element composed of a p-type layer, an i-type layer of a lamination structure consisting of an i-type layer by RFPCVD on the p-type layer side and an i-type layer by microwave ( mu W) PCVD on the n-type layer side, or an i-type layer by microwave ( mu W) PCVD on the p-type layer side and an i-type layer by RFPCVD on the n-type layer side, characterized in that the i-type layer by mu WPCVD is one formed by a mu WPCVD in which a lower mu W energy and a higher RF energy than mu W energy to decompose source gas at 100% are simultaneously applied to a source gas containing Si and Ge at a pressure of 50mTorr or less, such that the minimum values of bandgap is biased toward the p-type layer side off the center of the i-type layer, and the i-type layer by RFPCVD is one formed 30nm thick or less by a RFPCVD using a source gas containing a silicon containing gas at a deposition rate of 2nm/sec or less.

公开(公告)号：AU3604897A

公开(公告)日：1998-03-05

申请号：AU3604897

申请日：1997-08-27

Applicant: CANON KK

Inventor： SANO MASAFUMI ,  NAKAMURA TETSURO

IPC: H01L31/052 ,  H01L31/056 ,  H01L31/076 ,  H01L31/20 ,  H01L31/0392 ,  H01L31/075

Abstract: In a photovoltaic device having a plurality of pin structures, the pin structures comprise a first pin structure, a second pin structure and a third pin structure in the order from the light-incident side, each having an i-type semiconductor layer, and the i-type semiconductor layer of the first pin structure comprises amorphous silicon, the i-type semiconductor layer of the second pin structure comprises microcrystalline silicon and the i-type semiconductor layer of the third pin structure comprises amorphous silicon germanium or microcrystalline silicon germanium. The photovoltaic device according to the present invention provides a superior photoelectric conversion efficiency and less causing photo-deterioration.

公开(公告)号：AU669221B2

公开(公告)日：1996-05-30

申请号：AU5068293

申请日：1993-11-12

Applicant: CANON KK

Inventor： SAITO KEISHI ,  AOIKE TATSUYUKI ,  SANO MASAFUMI ,  NIWA MITSUYUKI ,  HAYASHI RYO ,  TONOGAKI MASAHIKO

IPC: H01L31/04 ,  H01L31/052 ,  H01L31/065 ,  H01L31/075 ,  H01L31/20 ,  H01L31/0328

Abstract: An object of the present invention is to provide a photoelectrical conversion device in which re-combination of carriers excited by light is prevented and the open voltage and the carrier range of positive holes are improved and to provide a generating system using the photoelectrical conversion device. The photoelectrical conversion device includes a p-layer, an i-layer, and an n-layer, wherein the photoelectrical conversion device being formed by stacking the p-layer, the i-layer and the n-layer each of which is made of non-single-crystal silicon semiconductor, the i-layer contains germanium atoms, the band gap of the i-layer is smoothly changed in a direction of the thickness of the i-layer, the minimum value of the band gap is positioned adjacent to the p-layer from the central position of the i-layer and both of a valence control agent to serve as a donor and another valence control agent to serve as an acceptor are doped into the i-layer. Further, at least either of the p-layer or the n-layer is formed into a stacked structure consisting of a layer mainly composed of group III elements of the periodic table and/or group V elements of the same and a layer containing the valence control agent and mainly composed of silicon atoms.

公开(公告)号：DE3784541D1

公开(公告)日：1993-04-15

申请号：DE3784541

申请日：1987-04-15

Applicant: CANON KK

Inventor： SANO MASAFUMI

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/24 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C30B25/02 ,  C30B28/14 ,  C30B29/06 ,  H01L21/205

公开(公告)号：AU623077B2

公开(公告)日：1992-05-07

申请号：AU1514588

申请日：1988-04-26

Applicant: CANON KK

Inventor： AOIKE TATSUYUKI ,  SANO MASAFUMI ,  YOSHINO TAKEHITO ,  KARIYA TOSHIMITSU ,  NIINO HIROAKI

IPC: G03G5/082

Abstract: There is provided an improved light receiving member for electrophotography which is made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on said aluminum support, wherein said multilayered light receiving layer consists of a lower layer in contact with said support and an upper layer, said lower layer being made of an inorganic material containing at least aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H), and having a part in which said aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, said upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X), and containing at least either of germanium atoms or tin atoms in a layer region in contact with said lower layer. The light receiving member for electrophotography exhibits outstanding electric characteristics, optical characteristics, photoconductive characteristics, durability, image characteristics, and adaptability to use environments.

公开(公告)号：AU610873B2

公开(公告)日：1991-05-30

申请号：AU1506988

申请日：1988-04-22

Applicant: CANON KK

Inventor： AOIKE TATSUYUKI ,  SANO MASAFUMI ,  YOSHINO TAKEHITO ,  KARIYA TOSHIMITSU ,  NIINO HIROAKI

IPC: G03G5/082

Abstract: A light receiving member for electrophotography made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on the aluminum support, wherein the multilayered light receiving layer consists of a lower layer in contact with the support and an upper layer, the lower layer being made of an inorganic material containing at least aluminum atom (Al), silicon atoms (Si) and hydrogen atoms (H), and having portion in which the aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, the upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X) and containing at least one of carbon atoms, nitrogen atoms (N) and oxygen atoms (O) in the layer region in adjacent with the lower layer. The light receiving member for electrophotography can overcome all of the foregoing problems and exibits extremely excellent electrical property, optical property, photoconductivity, durability, image property and circumstantial property of use.

公开(公告)号：BRPI0517568B8

公开(公告)日：2022-03-03

申请号：BRPI0517568

申请日：2005-11-09

Applicant: CANON KK ,  TOKYO INST TECH

Inventor： HOSONO HIDEO ,  NAKAGAWA KATSUMI ,  NOMURA KENJI ,  SANO MASAFUMI ,  KAMIYA TOSHIO

IPC: H01L21/363 ,  H01L21/428 ,  H01L29/786

Abstract: óxido amorfo, e, transistor de efeito de campo. é descrito um óxido amorfo inédito aplicável, por exemplo, a uma camada ativa de um tft. o óxido amorfo compreende microcristais.

公开(公告)号：BRPI0811750A2

公开(公告)日：2014-11-11

申请号：BRPI0811750

申请日：2008-05-15

Applicant: CANON KK

Inventor： OFUJI MASATO ,  ABE KATSUMI ,  HAYASHI RYO ,  SANO MASAFUMI ,  KUMOMI HIDEYA

IPC: H01L29/786