Abstract:
A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low Tg glass, a precursor of a low Tg glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200° C.
Abstract:
Transparent glass-to-glass hermetic seals are formed by providing a low melting temperature sealing glass along a sealing interface between two glass substrates and irradiating the interface with laser radiation. Absorption by the sealing glass and induced transient absorption by the glass substrates along the sealing interface causes localized heating and melting of both the sealing glass layer and the substrate materials, which results in the formation of a glass-to-glass weld. Due to the transient absorption by the substrate material, the sealed region is transparent upon cooling.
Abstract:
An electrodeless organic light-emitting device (10) and LCD systems using same are disclosed. The electrodeless organic light-emitting device (10) includes an organic light-emitting structure (200) with at least one organic light-emitting layer (250), and an illuminator (100) operably disposed to illuminate the organic light-emitting structure (200) with redirected light (114D). The redirected light (114D) causes the one or more organic light-emitting layers (250) to emit light (254), which constitutes the illumination from the organic light-emitting device (10). An LCD system includes the electrodeless organic light-emitting device (10) operably arranged relative to an LCD panel to receive the illumination (254). The organic light-emitting layer (250) can be segmented, with each segment emitting a primary color of light. The organic light-emitting layer segments are aligned with the cells of the LCD panel to define pixels for forming a display image. The LCD system can be configured to have a non-black background color when in the “off” state. Methods of forming illumination and display light are also disclosed.
Abstract:
Disclosed herein are sealed devices comprising a first glass substrate; a second glass substrate; an optional sealing layer between the first and second glass substrates; and at least one seal between the first and second glass substrates. The sealed devices may comprise at least one cavity containing at least one component chosen from laser diodes, light emitting diodes, organic light emitting diodes, quantum dots, and combinations thereof. Also disclosed herein are display devices comprising such sealed devices and methods for making sealed devices.
Abstract:
A method of sealing a workpiece comprising forming an inorganic film over a surface of a first substrate, arranging a workpiece to be protected between the first substrate and a second substrate wherein the inorganic film is in contact with the second substrate; and sealing the workpiece between the first and second substrates as a function of the composition of impurities in the first or second substrates and as a function of the composition of the inorganic film by locally heating the inorganic film with a predetermined laser radiation wavelength. The inorganic film, the first substrate, or the second substrate can be transmissive at approximately 420 nm to approximately 750 nm.
Abstract:
Embodiments are directed to glass frits containing phosphors that can be used in LED lighting devices and for methods associated therewith for making the phosphor containing glass frit and their use in glass articles, for example, LED devices.
Abstract:
Disclosed herein are waveguides comprising at least one scattering surface, a periodicity ranging from about 0.5 μm to about 2 μm, and an RMS roughness ranging from about 20 nm to about 60 nm. Single-layer waveguides having a thickness ranging from about 1 μm to about 100 μm are disclosed herein as well as multi-layer waveguides comprising at least one high index layer and optionally at least one low index layer. Lighting and display devices and OLEDs comprising such waveguides are further disclosed herein as well as methods for making the waveguides.
Abstract:
An organic light emitting diode (OLED) device having enhanced light extraction is disclosed. The OLED device includes an upper waveguide structure having an organic layer and supports first guided modes, and a lower waveguide structure with a light-extraction waveguide that supports second guided modes substantially matched to the first guided modes. The lower waveguide structure includes a light-extraction waveguide interfaced with a light-extraction matrix. The light-extraction waveguide includes one or more light-redirecting features. The upper and lower waveguide structures are configured to facilitate mode coupling from the first guided modes to the second guide modes while substantially avoiding coupling the first guided modes to surface plasmon polaritons. The light traveling in the second guided modes is redirected to exit the OLED device by light-redirecting features of the light-extraction waveguide.
Abstract:
A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low Tg glass, a precursor of a low Tg glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200° C.
Abstract:
An organic light emitting diode comprising a light extraction substructure and a diode superstructure is provided. The light extraction substructure comprises a light expulsion matrix distributed over discrete light extraction waveguide elements and a waveguide surface of the glass substrate. The light expulsion matrix is distributed at varying thicknesses to enhance the planarity of a diode superstructure-engaging side of the light extraction substructure and to provide light expulsion sites at the waveguide element termination points of the discrete light extraction waveguide elements. In operation, light originating in the organic light emitting semiconductor material of the diode superstructure is coupled to the discrete waveguide elements of the light extraction substructure as respective coupled modes characterized by an approximate coupling length defined as the propagation distance required for an optical mode to be coupled from the superstructure waveguide to one of the discrete waveguide elements of the light extraction substructure.