公开(公告)号：US10017849B2

公开(公告)日：2018-07-10

申请号：US13840752

申请日：2013-03-15

Applicant: CORNING INCORPORATED

Inventor： Robert Alan Bellman ,  Ta-Ko Chuang ,  Robert George Manley ,  Mark Alejandro Quesada ,  Paul Arthur Sachenik

IPC: C23C14/00 ,  C23C14/34 ,  C23C14/10

CPC classification number: C23C14/34 ,  C23C14/10 ,  C23C14/35 ,  C23C14/541

Abstract: A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low Tg glass, a precursor of a low Tg glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200° C.

公开(公告)号：US20140144772A1

公开(公告)日：2014-05-29

申请号：US13840752

申请日：2013-03-15

Applicant: CORNING INCORPORATED

Inventor： Robert Alan Bellman ,  Ta-Ko Chuang ,  Robert George Manley ,  Mark Alejandro Quesada ,  Paul Arthur Sachenik

IPC: C23C14/34

CPC classification number: C23C14/34 ,  C23C14/10 ,  C23C14/35 ,  C23C14/541

Abstract: A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low Tg glass, a precursor of a low Tg glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200° C.

Abstract translation: 形成气密性阻挡层的方法包括从溅射靶溅射薄膜，其中溅射靶包括诸如低Tg玻璃，低Tg玻璃的前体或铜或锡的氧化物的溅射材料。 在溅射期间，阻挡层中的缺陷的形成被限制在窄范围内，溅射材料保持在小于200℃的温度。

公开(公告)号：US20170218503A1

公开(公告)日：2017-08-03

申请号：US15432453

申请日：2017-02-14

Applicant: Corning Incorporated

Inventor： Robert Alan Bellman ,  Ta-Ko Chuang ,  Robert George Manley ,  Mark Alejandro Quesada ,  Paul Arthur Sachenik

IPC: C23C14/35 ,  C23C14/54 ,  C23C14/10

CPC classification number: C23C14/34 ,  C23C14/10 ,  C23C14/35 ,  C23C14/541

Abstract: A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low Tg glass, a precursor of a low Tg glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200° C.

公开(公告)号：US09722084B2

公开(公告)日：2017-08-01

申请号：US14787394

申请日：2014-04-25

Applicant: Corning Incorporated

Inventor： Ta-Ko Chuang ,  Yunfeng Gu ,  Robert George Manley

IPC: H01L29/786 ,  H01L29/66 ,  C03C23/00 ,  C03C25/66 ,  C03C25/70 ,  H01L21/02 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/324 ,  H01L21/768 ,  H01L29/04 ,  H01L29/16 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/78603 ,  C03C23/008 ,  C03C25/66 ,  C03C25/70 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02667 ,  H01L21/28 ,  H01L21/32133 ,  H01L21/324 ,  H01L21/76802 ,  H01L29/04 ,  H01L29/16 ,  H01L29/495 ,  H01L29/51 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/78606

Abstract: There is disclosed a method for chemically treating a display glass substrate by treating at least one surface of the glass substrate with a heated solution containing HCl to form a depletion layer at the surface and under the surface of the glass substrate. The disclosure also relates to display glass substrates containing the depletion layer made by the disclosed process. In addition, the disclosure relates to methods of making thin-film transistors (“TFTs”) on these display glass substrates by depositing a Si layer directly on the chemically treated surface of the glass substrate, and annealing the Si layer to form polycrystalline silicon.

公开(公告)号：US20160071981A1

公开(公告)日：2016-03-10

申请号：US14787394

申请日：2014-04-25

Applicant: Corning Incorporated

Inventor： Ta-Ko Chuang ,  Yunfeng Gu ,  Robert George Manley

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/16 ,  H01L21/02 ,  H01L21/28 ,  C03C25/70 ,  H01L21/324 ,  H01L29/49 ,  H01L29/51 ,  H01L21/3213 ,  C03C25/66 ,  H01L29/66 ,  H01L21/768

CPC classification number: H01L29/78603 ,  C03C23/008 ,  C03C25/66 ,  C03C25/70 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02667 ,  H01L21/28 ,  H01L21/32133 ,  H01L21/324 ,  H01L21/76802 ,  H01L29/04 ,  H01L29/16 ,  H01L29/495 ,  H01L29/51 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/78606

Abstract: There is disclosed a method for chemically treating a display glass substrate by treating at least one surface of the glass substrate with a heated solution containing HCl to form a depletion layer at the surface and under the surface of the glass substrate. The disclosure also relates to display glass substrates containing the depletion layer made by the disclosed process. In addition, the disclosure relates to methods of making thin-film transistors (“TFTs”) on these display glass substrates by depositing a Si layer directly on the chemically treated surface of the glass substrate, and annealing the Si layer to form polycrystalline silicon.

Abstract translation: 公开了通过用含有HCl的加热溶液处理玻璃基板的至少一个表面以在玻璃基板的表面和表面下形成耗尽层来对显示玻璃基板进行化学处理的方法。 本公开还涉及包含由所公开的方法制备的耗尽层的显示玻璃基板。 此外，本公开涉及通过在玻璃基板的化学处理的表面上直接沉积Si层以及退火Si层以形成多晶硅来在这些显示器玻璃基板上制造薄膜晶体管（“TFT”）的方法。

公开(公告)号：US20130341756A1

公开(公告)日：2013-12-26

申请号：US13973562

申请日：2013-08-22

Applicant: CORNING INCORPORATED

Inventor： Nadia Ben Mohamed ,  Ta-Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alexander Usenko

IPC: H01L29/02

CPC classification number: H01L29/02 ,  H01L21/185 ,  H01L21/762 ,  H01L21/76254

Abstract: A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.