公开(公告)号：JPS5845192A

公开(公告)日：1983-03-16

申请号：JP14330481

申请日：1981-09-10

Applicant: FUJITSU LTD

Inventor： YAMAMOTO KOUSAKU ,  KAWABATA YOSHIO ,  NISHIJIMA YOSHITO ,  FUKUDA HIROKAZU ,  SHINOHARA KOUJI

IPC: C30B19/06 ,  H01L21/208 ,  H01S5/00

Abstract: PURPOSE:To execute efficient growth, by providing a first slidable member having a liquid phase material reservoir on the upper face of the support of a base plate having a through hole for installing a base plate on the inside wall, and a second slidable member having a liquid phase used material reservoir on the lower face, and adjusting relation of arrangement of both reservoirs with respect to the through hole. CONSTITUTION:A first slidable member 21 having reservoirs 25, 27, 29 for containing a liquid phase material for being used for crystal growth is provided on the upper face of the support 23 of a base plate having a through hole 36 in the vertical direction for enabling installation of a base plate 35 on the inside wall. A second slidable member 22 having a reservoir 30 for containing a used liquid phase material is provided along the lower face. The arrangement relation of the reservoirs of the 2 members 21, 22 is adjusted with respect to the hole 36 of the support 23 to successively drop the material out of the reservoirs 25, 27, 29 of the member 21 through the hole 36 to the reservoir 30 of the member 22.

公开(公告)号：JPS57181185A

公开(公告)日：1982-11-08

申请号：JP5470681

申请日：1981-04-09

Applicant: FUJITSU LTD

Inventor： FUKUDA HIROKAZU ,  SHINOHARA KOUJI ,  KAWABATA YOSHIO ,  NISHIJIMA YOSHINDO ,  YAMAMOTO KOOSAKU

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/40

Abstract: PURPOSE:To facilitate the adjustment of the optical axis for infrared laser light, by closely arranging each semiconductor laser element for the radiation of infrared rays and visible light for light emission in the same direction. CONSTITUTION:The infrared ray laser element 3a constituted of PbSnTe is arranged on a cooling stem 1 close to a visible light emission laser element 3b with material of GaAlAs. Two conductive materials 4 on the upper surface of a ceramic plate 2 stuck on the upper left part of the cooling stem 1 and elements 3a, 3b are electrically connected. Next, when the elements 3a, 3b are lighted by passing drive current through the semiconductor laser, visible laser light is radiated from the element 3b in parallel with the laser light from the element 3a so as to set to approximate point by this visible light next to precisely adjust the optical axis for infrared laser light.

公开(公告)号：JPS57106036A

公开(公告)日：1982-07-01

申请号：JP18327180

申请日：1980-12-23

Applicant: FUJITSU LTD

Inventor： NISHIJIMA YOSHINDO ,  YAMAMOTO KOOSAKU ,  KAWABATA YOSHIO ,  FUKUDA HIROKAZU ,  SHINOHARA KOUJI

IPC: H01L21/304 ,  B28D5/00

Abstract: PURPOSE:To make a saw and a cleavage plane parallel by a method wherein the spot of a laser beam is projected on a screen after a saw is placed on a table and the spot of the laser beam applied to the cleavage plane of a crystal which is placed on the table is projected on the screen and is made agree with the previous one by rotating the table. CONSTITUTION:A blade 18 of a saw 19 touches a table 14 on the surface, arms 21, 22 are moved, a mirror 20 adhered to the saw 19 is parallel to it is irradiated by a laser source 23 and a spot A is obtained on a screen 26. Then a single crystal 24 is placed on the table 14, the arms 21, 22 are fixed, the cleavage plane 25 of the crystal 24 is irradiated by the source 23 and a spot A' of reflected light is obtained. The table is rotated until the point A' agrees with the point A. At that time the cleavage plane and the face of the blade 18 are in parallel. The saw 19 descends and cuts the crystal and at each cutting tables 12, 13 are very slightly, so that wafers are cut out. With above configuration cutting is made in parallel with the cleavage plane and the yield of the elements is improved.

公开(公告)号：JPS5778192A

公开(公告)日：1982-05-15

申请号：JP15400280

申请日：1980-10-31

Applicant: Fujitsu Ltd

Inventor： SHINOHARA KOUJI ,  NISHIJIMA YOSHINDO ,  KAWABATA YOSHIO ,  FUKUDA HIROKAZU ,  YAMAMOTO KOOSAKU

IPC: H01S5/00 ,  H01S5/06 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S5/40

CPC classification number: H01S5/4031 ,  H01S5/22 ,  H01S5/2275 ,  H01S5/3222

Abstract: PURPOSE:To obtain electromagnetic wave of wide wavelength from infrared range to microwave range by forming a plurality of tunable laser elements on the surface of a common substrate formed of semiconductors having a plurality of constituent elements, supplying predetermined currents to the respective elements and generating laser lights of different wavelengths from each other. CONSTITUTION:Two mesa units 2a, 2b are formed on the surface of multi-element semiconductor substrate 1 formed of elements, e.g., Pb, Sn, Te, etc., and P-N junctions J1 and J2 are respectively formed in these mesa units to form laser elements. Then, forward currents sufficient to operate laser actions for the junctions J1 and J2 with variable current source 3, thereby carrying out laser oscillation. In this structure, difference is provided in the crystalline composition in the meas units 2a and 2b to provide different current values and emitting light wavelengths, thereby producing difference vibrations. In this manner, difference is produced at the point of producing mode skip, and when one junction does not emit a light, the light emitted from the other junction is covered on the range in which the light is not emitted.

Abstract translation: 目的：通过在由具有多个构成元件的半导体形成的共同基板的表面上形成多个可调激光元件，从红外范围到微波范围获得宽波长的电磁波，为各元件提供预定电流并产生激光 彼此不同波长的光。 构成：在由诸如Pb，Sn，Te等元素形成的多元件半导体衬底1的表面上形成两个台面单元2a，2b，并且在这些台面单元中分别形成PN结J1和J2以形成 激光元件。 然后，向可变电流源3连接J1和J2的正向电流足以进行激光作用，从而进行激光振荡。 在该结构中，在测量单元2a和2b中的结晶组成中提供差异以提供不同的电流值并发出光波长，从而产生不同的振动。 以这种方式，在产生模式跳过点产生差异，并且当一个结不发光时，从另一个结点发射的光被覆盖在不发光的范围上。

公开(公告)号：JPS571654A

公开(公告)日：1982-01-06

申请号：JP7208780

申请日：1980-05-28

Applicant: FUJITSU LTD

Inventor： FUKUDA HIROKAZU ,  SHINOHARA KOUJI ,  YOSHIKAWA MITSUO ,  KAWABATA YOSHIO

IPC: B24B37/013 ,  B24B37/07

Abstract: PURPOSE:To properly detect the time when a wafer is ground to a desired thickness by grinding the wafer and a standard plate having different color at the same time and discriminating grinder dust, in grinding semiconductor wafers. CONSTITUTION:When a semiconductor wafer 3 is ground through the contact with a grinding fixed plate 6, and a desired thickness is obtained, the surface of the standard plate 4 which is made of carbon and has different colour from the water contacts with the grinding fixed plate 6, and the standard plate 4 is ground a little, and black color of carbon mixes with lapping agent. Through discrimination of this formed color, grinding operation is stopped, and the wafer 3 having a desired thickness can be obtained.

公开(公告)号：JPS56114843A

公开(公告)日：1981-09-09

申请号：JP1504480

申请日：1980-02-08

Applicant: FUJITSU LTD

Inventor： KAWABATA YOSHIO ,  NISHIJIMA YOSHINDO ,  NAKAMURA OSAMU

IPC: C03B37/023 ,  C03C13/04 ,  G02B6/00

Abstract: PURPOSE:To simplify the process for the preparation of light-transmitting glass fiber in the spinning with a multiple crucible system composed of two crucibles, and to facilitate the preparation of the fiber, by feeding viscous glass raw material to the melting crucible with pressure. CONSTITUTION:A highly viscous oxide paste 20 is charged as a raw material of core glass in a vessel, and mixed with a small amount of pure water to adjust the viscosity to the desired level. The raw material 20 is introduced into the crucible 11 for melting core glass with compressed O2 gas. On the other hand, the raw material of clad glass is introduced into the clad glass melting crucible 13 in the similar manner. The crucibles are heated during the introduction at the desired temperatures with the ovens 18A and 18B. The molten glass 12, 13 are agitated by dried gas introduced through a pipe 15, and water is removed therefrom in the form of bubbles. After the treatment, the stopper at the end B of the spinning crucible 17 is removed, and the extruded glass fiber is wound and spun.

公开(公告)号：JPS5684332A

公开(公告)日：1981-07-09

申请号：JP16249079

申请日：1979-12-13

Applicant: FUJITSU LTD

Inventor： KAWABATA YOSHIO ,  NISHIJIMA YOSHINDO ,  TATSUTA TAKASHI

IPC: C03B37/023 ,  G02B6/00

Abstract: PURPOSE:To allow the center of a core to agree with the center of a clad by putting an inner crucible connected to a core glass melting crucible in an outer crucible connected to a clad glass melting crucible so that the relative positions can be adjusted freely. CONSTITUTION:This optical fiber manufacturing crucible is composed of inner crucible 13 connected to core glass melting crucible 12 having U-shaped tubular conduit 11 at the bottom and of outer crucible 15 connected to clad glass melting crucible 14. Inner crucible 13 is in outer crucible 15 with gap C in-between, and owing to gap C crucibles 13, 15 can be moved slightly and relatively in the longitudinal X, lateral Y and height Z directions. Thus, the center of a core agrees with the center of a clad layer, and an optical fiber free from eccentricity and having a desired core diameter to outside diameter ratio is obtd.

公开(公告)号：JPS5659637A

公开(公告)日：1981-05-23

申请号：JP13478879

申请日：1979-10-18

Applicant: FUJITSU LTD

Inventor： NISHIJIMA YOSHINDO ,  NAKAMURA OSAMU ,  KAWABATA YOSHIO ,  TATSUTA TAKASHI

IPC: C03B19/14 ,  C03B37/023 ,  G02B6/00

Abstract: PURPOSE:To inexpensively obtain a crucible capable of manufacturing a low-loss glass fiber contg. little impurities for optical transmission by using a natural quartz pipe with a synthetic quartz coat stuck to the inner wall. CONSTITUTION:Quartz guide tube 22 with one end tapered is welded to one end of natural quartz pipe 21. Oxygen gas is introduced from oxygen gas feed pipe 23 into evaporator 25 filled with an Si-contg. glass forming compound such as silicon tetrachloride, and the gas carrying the compound is introduced into pipe 21 through gas introduction pipe 26. On the other hand, by uniformly heating the outer wall of pipe 21 at about 1,800-2,000 deg.C with oxyhydrogen burner 27, the glass forming compound is oxidized to form synthetic quartz coat 28 of high purity on the inner wall of pipe 21. Various kinds of such quartz pipes are formed and united to a body by welding to obtain a multilayered quartz crucible.

公开(公告)号：JPS5537450A

公开(公告)日：1980-03-15

申请号：JP11027078

申请日：1978-09-07

Applicant: FUJITSU LTD

Inventor： INOUE KOUZOU ,  OZEKI TOMOMASA ,  KAWABATA YOSHIO ,  GOTOU JIYUNJIROU

IPC: C03C13/04 ,  C03B37/00 ,  C03B37/014 ,  C03B37/016 ,  G02B6/00

Abstract: PURPOSE:To produce the title glass of a stable compsn. by mixing cpd. oxide of phosphorus and a III group element with cpd. oxide of phosphorus and a IV group element and by converting the mixt. into glass. CONSTITUTION:Halide of a III group element and halide of a IV group element are separately hydrolyzed to form hydrated oxide of the III group element and hydrated oxide of the IV group element, which are separately reacted with phosphorus. 36-50wt% of the resulting cpd. oxide of phosphorus and the III group element is mixed with 64-50wt% of the resulting cpd. oxide of phosphorus and the IV group element, and the mixt. is heated to about 1500 deg.C and converted into glass.

公开(公告)号：JPS5520243A

公开(公告)日：1980-02-13

申请号：JP9231178

申请日：1978-07-27

Applicant: FUJITSU LTD

Inventor： NAKAMURA OSAMU ,  KAWABATA YOSHIO

IPC: C03B37/018 ,  C03B19/10 ,  C03B37/012 ,  C03C13/04 ,  G02B6/00

Abstract: PURPOSE:To stabilize the compsn. of glass-forming oxide soot and to enhance the yield thereof by introducing glass raw material chlorides, O2 gas and steam into a reaction tube and by heating them to form the oxide soot in the tube. CONSTITUTION:Oxygen gas as carrier gas is introduced into evaporator 23 to support POCl3, and GeCl4 is also supported on oxygen gas in evaporator 26. Valve 29 for feeding oxygen gas to evaporator 27 contg. GaCl3 is being closed. Oxygen gas is introduced into evaporator 33 to support steam. The POCl3 and GeCl4 undergo hydrolysis in reaction tube 30 heated to a high temp. with heating furnaces 36, forming compound oxide soot of GeP2O7, which is gathered in container 37. Next tube 30 and container 37 are changed for new ones, and using evaporator 27 in place of evaporator 26 compound oxide soot of GaPO4 is gathered similarly. The soots are weighed in a proper ratio, mixed, heated in a double quartz crucible, and converted into glass for a light transmission line.