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公开(公告)号：DE2746418A1
公开(公告)日：1978-05-03
申请号：DE2746418
申请日：1977-10-15
Applicant: FUJITSU LTD
Inventor： INOUE KOZO DIPL ING , GOTO JUNJIRO , KAWABATA YOSHIO
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公开(公告)号：CA1102359A
公开(公告)日：1981-06-02
申请号：CA289984
申请日：1977-11-01
Applicant: FUJITSU LTD
Inventor： INOUE KOZO , GOTO JUNJIRO , KAWABATA YOSHIO
Abstract: This specification describes the glass for an optical transmission line including phosphorous pentoxide (P2O5) and germanium dioxide (GeO2) as the major glass forming oxide and gallium trioxide (Ga2O3) as the component for water-proof and refractive index control, and a method of manufacturing above glass material utilizing gas phase chemical reaction. This glass material can be formed into glass fiber and it is also possible to spin such material by vitrifying it in the vessel made of silica since it is a nonalkaline material and then drawing it out form the hole provided at the bottom of such vessel.
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公开(公告)号：JPH0156555B2
公开(公告)日：1989-11-30
申请号：JP16634587
申请日：1987-07-02
Applicant: FUJITSU LTD
Inventor： FUKUDA HIROKAZU , SHINOHARA KOJI , KAWABATA YOSHIO , NISHIJIMA YOSHITO , YAMAMOTO KOSAKU
IPC: H01S5/00
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公开(公告)号：JPS58215036A
公开(公告)日：1983-12-14
申请号：JP9891882
申请日：1982-06-08
Applicant: Fujitsu Ltd
Inventor： KAWABATA YOSHIO , NISHIJIMA YOSHITO , FUKUDA HIROKAZU , YAMAMOTO KOUSAKU
IPC: H01L21/208 , H01L21/368 , H01S5/00
CPC classification number: H01L21/02625 , H01L21/02568
Abstract: PURPOSE:To enable to remove easily an unnecessarily remaining solution on a crystal layer by a method wherein a separate penetrating hole is provided at the rear side of a liquid reservoir to accommodate a material for formation of the crystal layer, and an adsorbing material is filled up in the hole thereof. CONSTITUTION:At a slide member 11, the differently penetrating hole 13 is provided at the rear side of the liquid reservoir 12 to accommodate the material to form the crystal layer at the uppermost layer out of the crystal layers to be formed on a substrate 16, and the block 14 for adsorption of the melt consisting of porous PbTe, for example, is set up in the hole thereof. Moreover the material 18, 20, 21 of Pb1-xSnxTe is filled up respectively in the reservoirs 17, 19, 12 of the member 11. The member 11 prepared by this way is transferred in order in the direction shown with an arrow mark B, and epitaxial growth of the crystal layer is attained on the substrate 16. After the desired crystal layer is laminatedly formed by this way, the member 11 is transferred moreover in the direction shown with the arrow mark B to make the solution of unnecessary Pb1-xSnxTe remaining on the crystal layer to be adsorbed to the block 14 accommodated in the hole 13. Accordingly the smooth surface of the epitaxial layer generating no convex type projection can be obtained.
Abstract translation: 目的：为了能够通过一种方法在液晶层上容易地除去不必要的剩余溶液，其中在液体储存器的后侧设置单独的通孔以容纳用于形成晶体层的材料，并且填充吸附材料 在其孔中。 构成：在滑动构件11处，不同的贯通孔13设置在储液器12的后侧，以容纳材料，以在待形成在基板16上的晶体层的最上层形成晶体层， 例如，将由多孔PbTe构成的熔体吸附的块14设置在其孔中。 此外，Pb1-xSnxTe的材料18,20,21分别填充在构件11的储存器17,19,12中。通过这种方式制备的构件11按箭头B所示的方向依次传送， 并且在基板16上获得晶体层的外延生长。在通过这种方式层叠形成所需的晶体层之后，再次以箭头B所示的方向转移部件11，使得不需要的Pb1-xSnxTe 保留在晶体层上以吸附到容纳在孔13中的块体14上。因此，可以获得不产生凸型投影的外延层的平滑表面。
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公开(公告)号：JPS58134487A
公开(公告)日：1983-08-10
申请号：JP1786282
申请日：1982-02-05
Applicant: FUJITSU LTD
Inventor： NISHIJIMA YOSHITO , SHINOHARA KOUJI , KAWABATA YOSHIO , FUKUDA HIROKAZU , YAMAMOTO KOUSAKU
Abstract: PURPOSE:To avoid a laser damage by disposing a spectrometer for measuring the wavelength corresponding to the drive current between a laser to be measured and a photodetector, applying the stepwise drive current to the laser, operating the grading of the spectrometer and storing the output of the photodetector so that the output becomes the maximum in a memory, thereby obtaining accurate I-lambda characteristic in a short time. CONSTITUTION:A laser drive current I is flowed from a variable current power source 1 to a laser L, and the output light from the laser is incident through the first lens 2, a chopper CH and the second lens 3 to a spectrometer 5. Then, the output light from the spectrometer 5 is supplied to a photodetector D, and amplified by a lock-in amplifier LA. In this structure, a logic circuit 20 having an A/D converter 7, a CPU 8 containing a memory 9 and a D/A converter 10 is newly inserted to between the amplifier LA and the power source 1, the drive current from the power source 1 is varied stepwisely, the grading of the spectrometer 5 is varied for the respective levels at this time, and the conditions that the output of the photodetector D becomes the maximum is stored in the memory 9.
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Patent Agency Ranking
公开(公告)号：JPS5856378A
公开(公告)日：1983-04-04
申请号：JP15576081
申请日：1981-09-29
Applicant: FUJITSU LTD
Inventor： KAWABATA YOSHIO , NISHIJIMA YOSHITO , FUKUDA HIROKAZU , YAMAMOTO KOUSAKU
IPC: H01L21/368 , H01S5/00 , H01S5/30
Abstract: PURPOSE:To obtain the laser element, in which there are few crystal defects and oscillation threshold currents thereof are small, by changing the growth temperature of an active layer in the middle and controlling impurity diffusion from a buffer layer. CONSTITUTION:A sliding member 24 with a liquid reservoir 25 for a buffer layer forming material, a liquid reservoir 26 for an active layer forming material, an empty liquid reservoir 27 and a liquid reservoir 28 for a top layer forming material is mounted onto a supporting base 21 into which a substrate 22 for epitaxial growth and a thin plate 23 for a dummy are buried. The sliding member 24 is moved in the B direction, the liquid reservoirs 25, 26 are rested onto the substrate 22 in succession, and the buffer layer and one part of the active layer are shaped. The temperature of an epitaxial growth device is dropped under a state that the empty liquid reservoir 27 is rested onto the substrate 22, the liquid reservoir 26 is rested onto the substrate 22 again, and the residual section of the active layer is formed. A P-N junction is shaped between the high- temperature growth section and low-temperature growth section of the active layer at that time. The liquid reservoir 28 is rested onto the substrate 22, and the crystal layer of a top layer is shaped.
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公开(公告)号：JPS57181187A
公开(公告)日：1982-11-08
申请号：JP6741881
申请日：1981-04-30
Applicant: FUJITSU LTD
Inventor： SHINOHARA KOUJI , NISHIJIMA YOSHINDO , KAWABATA YOSHIO , FUKUDA HIROKAZU , YAMAMOTO KOOSAKU
Abstract: PURPOSE:To prevent the vibration of elements or temperature changes, by joining a cooling head to a heat radiating base via a cushion plate material with the heat radiating base fixed on a fixture other than a freezer. CONSTITUTION:To prevent the vibration of the heat radiating base 3 accompanied by the vibration of the cooling head 2, the cooling head 2 and the heat radiating base 3 are joined each other via the cushion plate material 7 constituted of a thermal conductor having bendability. This cushion plate material 7 is constituted of a metal plate with good thermal conductivity or copper wires, etc. joined to a plate. Besides, the heat radiating base 3 is fixed on the fixture 9 without external vibration by a support rod 8 constituted of substance with poor thermal conductivity through a bellows 5a formed on a vacuum vessel 5. Thus, the vibration of the cooling head 2 or small temperature change is prevented from being transmitted to the heat radiating base 3 to allow the prevention of the vibration or small temperature change of the laser element 4.
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公开(公告)号：JPS5788791A
公开(公告)日：1982-06-02
申请号：JP16437780
申请日：1980-11-20
Applicant: FUJITSU LTD
Inventor： KAWABATA YOSHIO , SHINOHARA KOUJI , NISHIJIMA YOSHINDO , FUKUDA HIROKAZU , YAMAMOTO KOOSAKU
Abstract: PURPOSE:To obtain a semiconductor laser element having high efficiency by a method wherein crystal layers of Pb1-xSnxTe having extremely smaller X value than a crystal layer forming an active layer are made to be interposed in the interface between the active layer and a buffer layer and in the interface between the active layer and a top layer. CONSTITUTION:The tree layers 2, 3, 4 having composition being indicated by Pb1-xSnxTe and having respectively different X value are laminated on a substrate 1 consisting of plural semiconductor crystals to form the semiconductor laser element. At that time, the crystal layers 11, 12 having the smaller X value than the crystal layer 3 to form the second layer and having the larger X value than the crystal bodies to form the first and the third layers are made to be interposed in the interface between the buffer layer 2 of the first layer and the active layer 3 of the second layer, and in the interface between the active layer 3 of the second layer and the top layer 4 of the third layer. Accordingly by forming the crystal layers 11, 12 in the interfaces thin to mitigate diffusion of Sn atoms in the active layer 3 into the buffer layer 2 and the top layer 4, threshold current density to make laser oscillation to start can be reduced.
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公开(公告)号：JPS5753943A
公开(公告)日：1982-03-31
申请号：JP12999880
申请日：1980-09-17
Applicant: Fujitsu Ltd
Inventor： NISHIJIMA YOSHINDO , KAWABATA YOSHIO , FUKUDA HIROKAZU , YAMAMOTO KOOSAKU , SHINOHARA KOJI
IPC: H01L21/208 , H01L21/368 , H01S5/00
CPC classification number: H01L21/02625 , H01L21/02417 , H01L21/02568 , H01L21/02628
Abstract: PURPOSE:To enhance a yield rate of an element employing a growing layer, by providing a concave part, whose inner wall adjacent to a substrate is slanted, in a supporting table in a sliding method, throwing unnecessary residual liquid, and smoothing the surface of the multiple element semiconductor growing layer. CONSTITUTION:On the supporting table 11, a dummy substrate and the substrate 11 comprising, e.g., PbTe are embedded. Solution 19-21 of e.g. Pb1-XSnXTe is filled in through holes 16-18 provided in a sliding member 15. An epitaxial layer of lead tin telluride is grown. A concave part 14 is provided in said supporting table 11, and the member 15 is moved. The solution 19-21 are thrown to the concave part 14 along the slanted surface after the formation of a buffer layer, an active layer, and a top layer. Another through hole 32 other than the liquid holes is provided in the sliding member 31. Hydrogen is blown through a thin pipe 33 after the formation of each growing layer and the throwing of the liquid, and the unnecessary liquid attached to the surface of the substrate 35 is blown away and removed. In this way, the growing layer without irregularity suitable for laser elements and the like can be manufactured.
Abstract translation: 目的：为了提高使用生长层的元素的成品率，通过在滑动方式的支撑台中设置与基板相邻的内壁倾斜的凹部，投入不必要的残留液体，使表面平滑化 多元素半导体生长层。 构成：在支撑台11上嵌入虚拟基板和包括例如PbTe的基板11。 溶液19-21。 Pb1-XSnXTe填充在设置在滑动构件15中的通孔16-18中。生长铅锡碲化物的外延层。 在所述支撑台11中设置凹部14，使构件15移动。 在形成缓冲层，活性层和顶层之后，将溶液19-21沿着倾斜表面投射到凹部14。 在滑动构件31中设置有除了液体孔以外的另一个通孔32.在形成每个生长层和喷射液体之后，通过细管33吹入氢气，并且附着到基板的表面上的不需要的液体 35被吹走和移除。 以这种方式，可以制造不适合于激光元件等的不规则的生长层。
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公开(公告)号：JPS5734381A
公开(公告)日：1982-02-24
申请号：JP10955780
申请日：1980-08-08
Applicant: Fujitsu Ltd
Inventor： SHINOHARA KOUJI , NISHIJIMA YOSHINDO , KAWABATA YOSHIO , FUKUDA HIROKAZU
CPC classification number: H01S5/2275 , H01S5/3222
Abstract: PURPOSE:To decrease manufacturing process expenditure sharply and to obtain a narrow active layer by a method wherein more than one of P-N junction are built solely by epitaxial growth and they are divided individually by splitting. CONSTITUTION:More than one of grooves 2a-2c are diged by etching on a surface of a P type single crystal substrate 1 and a P type Pb1-xSnxTe layer 3 is grown by liquid phase epitaxial growth all over the surface covering them and they are solved and removed by selective etching and grown layers 3 that is 3a-3c are left unremoved exclusively in grooves 2a-2c. Next an N type PbTe layer 4 is grown by liquid epitaxial growth on all over them and P-N junction Jb and Ja are built both between a layer 4 and layers 3a-3c and between the layer and the substrate 1. After these procedures Au electrodes 5 and 6 are attached over both front and back surfaces and grown layers 3a-3c are cut apart by splitting separately and an electrode 5 is connected to a stem 7 and an electrode 6 is connected to a lead wire 8 and thus each semiconductor laser device is completed.
Abstract translation: 目的：通过其中多于一个P-N结仅由外延生长构建并且通过分裂分开分开的方法，大大减少制造工艺费用并获得窄活性层。 构成：通过蚀刻在P型单晶衬底1的表面上挖出多个凹槽2a-2c，并且通过在覆盖它们的整个表面上通过液相外延生长生长P型Pb1-xSnxTe层3，并且它们是 通过选择性蚀刻来解决和去除，并且仅将3a-3c的生长层3仅排除在凹槽2a-2c中。 接下来，通过在其上面的液体外延生长生长N型PbTe层4，并且PN结Jb和Ja被构建在层4和层3a-3c之间以及层和衬底1之间。在这些过程之后，Au电极5 并且6分别连接在前表面和后表面上，并且通过分开分开切割生长层3a-3c，并且电极5连接到杆7，并且电极6连接到引线8，因此每个半导体激光器件是 完成
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