公开(公告)号：AU2002248380A1

公开(公告)日：2002-07-30

申请号：AU2002248380

申请日：2002-01-22

Applicant: HONEYWELL INT INC

Inventor： BIARD JAMES R ,  JOHNSON RALPH H ,  GUENTER JAMES K

IPC: H01L31/10 ,  H01L21/00 ,  H01L21/20 ,  H01L21/205 ,  H01L31/00 ,  H01L31/0304 ,  H01L31/18

Abstract: A metamorphic device including a substrate structure upon which a semiconductor device can be formed. In the metamorphic device, a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading layer which grades past the desired lattice constant is configured at a low temperature. A reverse grading layer grades the lattice constant back to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in at least the grading layer and the reverse grading layer. Thereon a strained layer superlattice is created upon which a high-speed photodiode or other semiconductor device can be formed.