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公开(公告)号：CA1200468A
公开(公告)日：1986-02-11
申请号：CA375113
申请日：1981-04-09
Applicant: IBM
Inventor： MARINACE JOHN C , WILKIE EARL L
IPC: C30B29/42
Abstract: CRYSTAL OF GERMANIUM AND GALLIUM ARSENIDE A crystal of Ga(1-0.5x)Gex As(1-0.5x). The crystals are grown by epitaxial chemical vapor deposition with varying concentrations of the germanium which may be positioned on either or both the gallium and the arsenic sites in the respective sublattices.
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公开(公告)号：CA1190043A
公开(公告)日：1985-07-09
申请号：CA434109
申请日：1983-08-08
Applicant: IBM
Inventor： MARINACE JOHN C
Abstract: Silicon carbide material retain the hardness, wear and heat resistance properties and can be rendered conductive by the incorporation of an element of the same valence as silicon and carbon in quantities in excess of 0.01%. Germanium in excess of 0.01% in SiC is conductive. The material is very hard, is electrically conductive in the 2x10-4 ohm cm range and is useful in highly corrosive and abrasive applications.
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Patent Agency Ranking
公开(公告)号：CA1130474A
公开(公告)日：1982-08-24
申请号：CA343368
申请日：1980-01-09
Applicant: IBM
Inventor： MARINACE JOHN C
IPC: C30B25/18 , C30B29/40 , G01D15/18 , H01L21/20 , H01L21/205 , H01L23/473 , H01L27/14 , H01L29/04 , H01L29/06 , H01L31/00 , H01L31/0264 , H01L33/20
Abstract: EPITAXIAL TUNNELS Epitaxial tunnels may be formed in crystalline bodies of crystalline materials by growth of the material on a substrate having two intersecting crystallographic planes that exhibit rapid epitaxial growth and by maintaining the growth until the structure forming along those planes closes, thereby producing a tunnel. P-n junction structures can be made in semiconductor devices by appropriate techniques. Yo978-035
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公开(公告)号：DE1178827B
公开(公告)日：1964-10-01
申请号：DEJ0018778
申请日：1960-09-28
Applicant: IBM
Inventor： MARINACE JOHN C , RUTZ RICHARD F
Abstract: A tunnel diode is formed by epitaxially depositing, in a closed container, a layer of semi-conductor of one conductivity type on a substrate of the opposite conductivity type by vapour deposition from a gaseous compound of the semi-conductor element and a transport element as in the parent Specification, the resulting junction being heat treated, either before, or during, the alloying of ohmic contacts thereto, to increase the ratio of peak to valley currents of the current voltage characteristic of the diode. In examples, germanium is deposited on germanium or gallium arsenide bodies which are then heat treated for 20 seconds-10 minutes at 665 DEG C.
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公开(公告)号：CA1184321A
公开(公告)日：1985-03-19
申请号：CA399153
申请日：1982-03-23
Applicant: IBM
Inventor： MARINACE JOHN C , MCGIBBON RALPH C
IPC: G03F7/09 , G03F7/11 , H01L21/312 , G03F7/02
Abstract: A process for improving the adhesion of a photoresist to a substrate by applying a layer of titanium, zirconium, hafnium and/or oxide thereof between the photoresist and substrate.
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