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公开(公告)号：CA2009247C
公开(公告)日：1993-04-06
申请号：CA2009347
申请日：1990-02-05
Applicant: IBM
Inventor： RODBELL KENNETH P , TOTTA PAUL A , WHITE JAMES F
IPC: E04F13/21 , B60R9/00 , B60R13/01 , H01L23/532
Abstract: A sputtered low copper concentration multilayered, device interconnect metallurgy structure is disclosed herein. The interconnect metallization structure comprises a sputtered aluminum-copper (
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