公开(公告)号：US20210098387A1

公开(公告)日：2021-04-01

申请号：US16585666

申请日：2019-09-27

Applicant: Intel Corporation

Inventor： Carl Naylor ,  Mauro Kobrinsky ,  Richard Vreeland ,  Ramanan Chebiam ,  William Brezinski ,  Brennen Mueller ,  Jeffery Bielefeld

IPC: H01L23/532 ,  H01L21/768

Abstract: Composite integrated circuit (IC) device structures that include two components coupled through a hybrid bonded composite interconnect structure. The two components may be two different monolithic IC structures (e.g., chips) that are bonded over substantially planar dielectric and metallization interfaces. Composite interconnect metallization features formed at a bond interface may be doped with a metal or chalcogenide dopant. The dopant may migrate to a periphery of the composite interconnect structure and form a barrier material that will then limit outdiffusion of a metal, such as copper, into adjacent dielectric material.

公开(公告)号：US20200185532A1

公开(公告)日：2020-06-11

申请号：US16214706

申请日：2018-12-10

Applicant: INTEL CORPORATION

Inventor： Kevin Lin ,  Abhishek Sharma ,  Carl Naylor ,  Urusa Alaan ,  Christopher Jezewski ,  Ashish Agrawal

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/768 ,  H01L29/24 ,  H01L29/417

Abstract: A transistor structure includes a layer of active material on a base. The base can be insulator material in some cases. The layer has a channel region between a source region and a drain region. A gate structure is in contact with the channel region and includes a gate electrode and a gate dielectric, where the gate dielectric is between the gate electrode and the active material. An electrical contact is on one or both of the source region and the drain region. The electrical contact has a larger portion in contact with a top surface of the active material and a smaller portion extending through the layer of active material into the base. The active material may be, for example, a transition metal dichalcogenide (TMD) in some embodiments.