公开(公告)号：US20240113158A1

公开(公告)日：2024-04-04

申请号：US17957003

申请日：2022-09-30

Applicant: Intel Corporation

Inventor： Jeremy D. Ecton ,  Brandon C. Marin ,  Haobo Chen ,  Changhua Liu ,  Srinivas Venkata Ramanuja Pietambaram

IPC: H01L49/02 ,  H01L25/16

CPC classification number: H01L28/91 ,  H01L25/16 ,  H01L28/92

Abstract: Disclosed herein are microelectronics package architectures utilizing in-situ high surface area capacitor in substrate packages and methods of manufacturing the same. The substrates may include an anode material, a cathode material, and a conductive material. The anode material may have an anode surface that may define a plurality of anode peaks and anode valleys. The cathode material may have a cathode surface that may define a plurality of cathode peaks and cathode valleys complementary to the plurality of anode peaks and anode valleys. The conductive material may be located at the anode peaks.

公开(公告)号：US20230197540A1

公开(公告)日：2023-06-22

申请号：US17556558

申请日：2021-12-20

Applicant: Intel Corporation

Inventor： Kristof Darmawikarta ,  Haobo Chen ,  Xiaoying Guo ,  Hongxia Feng

IPC: H01L23/15 ,  H01L23/498 ,  H01L23/532

CPC classification number: H01L23/15 ,  H01L23/5329 ,  H01L23/49822

Abstract: Methods, apparatus, systems, and articles of manufacture are disclosed to enable electrical traces on glass cores in integrated circuit packages that includes an integrated circuit (IC) package substrate comprising a glass core, a photo-imageable dielectric (PID) material on the glass core, and metal interconnects in openings in the PID material.

公开(公告)号：US20220093520A1

公开(公告)日：2022-03-24

申请号：US17026703

申请日：2020-09-21

Applicant: Intel Corporation

Inventor： Jeremy D. Ecton ,  Aleksandar Aleksov ,  Brandon C. Marin ,  Yonggang Li ,  Leonel Arana ,  Suddhasattwa Nad ,  Haobo Chen ,  Tarek Ibrahim

IPC: H01L23/538 ,  H05K1/11 ,  H01L21/768

Abstract: Conductive routes for an electronic substrate may be fabricated by forming an opening in a material, using existing laser drilling or lithography tools and materials, followed by selectively plating a metal on the sidewalls of the opening. The processes of the present description may result in significantly higher patterning resolution or feature scaling (up to 2× improvement in patterning density/resolution). In addition to improved patterning resolution, the embodiments of the present description may also result in higher aspect ratios of the conductive routes, which can result in improved signaling, reduced latency, and improved yield.

公开(公告)号：US20250112165A1

公开(公告)日：2025-04-03

申请号：US18478250

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Brandon Marin ,  Hiroki Tanaka ,  Robert May ,  Srinivas Pietambaram ,  Gang Duan ,  Suddhasattwa Nad ,  Numair Ahmed ,  Jeremy Ecton ,  Benjamin Taylor Duong ,  Bai Nie ,  Haobo Chen ,  Xiao Liu ,  Bohan Shan ,  Shruti Sharma ,  Mollie Stewart

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/00

Abstract: Anisotropic conductive connections for interconnect bridges and related methods are disclosed herein. An example a package substrate for an integrated circuit package, the package substrate comprising a first pad disposed at a first end of an interconnect within the package substrate, the first pad disposed in a cavity in the package substrate, an interconnect bridge disposed in the cavity, the interconnect bridge including a second pad, and a third pad, and a layer disposed between the first pad and the second pad, the layer having a first conductivity between the first pad and the second pad, the layer having a second conductivity between the second pad and the third pad, the first conductivity greater than the second conductivity.

公开(公告)号：US20250105209A1

公开(公告)日：2025-03-27

申请号：US18475373

申请日：2023-09-27

Applicant: Intel Corporation

Inventor： Gang Duan ,  Yosuke Kanaoka ,  Minglu Liu ,  Srinivas V. Pietambaram ,  Brandon C. Marin ,  Bohan Shan ,  Haobo Chen ,  Jeremy Ecton ,  Benjamin T. Duong ,  Suddhasattwa Nad

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/42 ,  H01L23/538 ,  H10B80/00

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first layer having first dies in a first insulating material; a second layer on the first layer, the second layer including second dies having a first thickness and third dies having a second thickness different than the first thickness, the second dies and the third dies in a second insulating material, wherein the second dies and third dies have a first surface and an opposing second surface, and wherein the first surfaces of the second and third dies have a combined surface area between 3,000 square millimeters (mm2) and 9,000 mm2; and a redistribution layer (RDL) between the first layer and the second layer, the RDL including conductive pathways, wherein the first dies are electrically coupled to the second dies and the third dies by the conductive pathways and by interconnects.

公开(公告)号：US20240222243A1

公开(公告)日：2024-07-04

申请号：US18091555

申请日：2022-12-30

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Haobo Chen ,  Bai Nie ,  Srinivas Venkata Ramanuja Pietambaram ,  Gang Duan ,  Kyle Jordan Arrington ,  Ziyin Lin ,  Hongxia Feng ,  Yiqun Bai ,  Xiaoying Guo ,  Dingying Xu ,  Kristof Darmawikarta

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/15

CPC classification number: H01L23/49822 ,  H01L21/4857 ,  H01L23/15 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49894 ,  H01L24/16 ,  H01L2224/16227

Abstract: An integrated circuit device substrate includes a first glass layer with a redistribution layer mounting region and an integrated circuit device mounting region, wherein a first major surface of the first glass layer is overlain by a first dielectric layer, and wherein the first glass layer includes a first plurality of conductive pillars. A second glass layer is on the redistribution layer mounting region on the first glass layer, wherein the second glass layer includes a second dielectric layer on a second major surface thereof, and wherein the second dielectric layer is bonded to the first dielectric layer on the first major surface of the first glass layer, the second glass layer including a second plurality of conductive pillars electrically interconnected with the first plurality of conductive pillars in the first glass layer.

公开(公告)号：US20240219656A1

公开(公告)日：2024-07-04

申请号：US18089963

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Ziyin Lin ,  Yiqun Bai ,  Bohan Shan ,  Kyle Jordan Arrington ,  Haobo Chen ,  Dingying Xu ,  Robert Alan May ,  Gang Duan ,  Bai Nie ,  Srinivas Venkata Ramanuja Pietambaram

IPC: G02B6/42 ,  H01L23/15 ,  H01L25/16

CPC classification number: G02B6/4214 ,  H01L23/15 ,  H01L25/167 ,  H01L24/16 ,  H01L2224/16227

Abstract: A semiconductor device and associated methods are disclosed. In one example, the electronic device includes a photonic die and a glass substrate. In selected examples, the semiconductor device includes one or more turning mirrors to direct an optical signal between the photonic die and the glass substrate. Configurations of turning mirrors are provided to improve signal integrity and manufacturability.

公开(公告)号：US20240219654A1

公开(公告)日：2024-07-04

申请号：US18089892

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Ziyin Lin ,  Yiqun Bai ,  Bohan Shan ,  Kyle Jordan Arrington ,  Haobo Chen ,  Dingying Xu ,  Robert Alan May ,  Gang Duan ,  Bai Nie ,  Srinivas Venkata Ramanuja Pietambaram

IPC: G02B6/42 ,  H01L25/16

CPC classification number: G02B6/4214 ,  H01L25/167

Abstract: A semiconductor device and associated methods are disclosed. In one example, the electronic device includes a photonic die and a glass substrate. In selected examples, the semiconductor device includes one or more turning mirrors to direct an optical signal between the photonic die and the glass substrate. Configurations of turning mirrors are provided to improve signal integrity and manufacturability.

公开(公告)号：US20240213169A1

公开(公告)日：2024-06-27

申请号：US18086265

申请日：2022-12-21

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Haobo Chen ,  Yiqun Bai ,  Dingying Xu ,  Srinivas Venkata Ramanuja Pietambaram ,  Hongxia Feng ,  Gang Duan ,  Xiaoying Guo ,  Ziyin Lin ,  Bai Nie ,  Kyle Jordan Arrington ,  Jeremy D. Ecton ,  Brandon C. Marin

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L23/15 ,  H01L23/31 ,  H01L23/498 ,  H01L23/64 ,  H10B80/00

CPC classification number: H01L23/5389 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/565 ,  H01L23/15 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/5382 ,  H01L23/5386 ,  H01L23/645 ,  H10B80/00 ,  H01L24/32

Abstract: An electronic system includes a substrate and a top surface active component die. The substrate includes a glass core layer including a cavity formed through the glass core layer; a glass core layer active component die disposed in the cavity; a first buildup layer contacting a first surface of the glass core layer; a second buildup layer contacting a second surface of the glass core layer; and a mold layer contacting a surface of the first buildup layer. The mold layer includes a mold layer active component die disposed in the mold layer, and the first buildup layer includes electrically conductive interconnect providing electrical continuity between the glass core layer active component die and the mold layer active component die. The top surface active component die is attached to the top surface of the substrate and electrically connected to the mold layer active component die.

公开(公告)号：US20240112971A1

公开(公告)日：2024-04-04

申请号：US17957359

申请日：2022-09-30

Applicant: Intel Corporation

Inventor： Yiqun Bai ,  Dingying Xu ,  Srinivas Pietambaram ,  Hongxia Feng ,  Gang Duan ,  Xiaoying Guo ,  Ziyin Lin ,  Bai Nie ,  Haobo Chen ,  Kyle Arrington ,  Bohan Shan

IPC: H01L23/15 ,  H01L21/02 ,  H01L23/495

CPC classification number: H01L23/15 ,  H01L21/02354 ,  H01L23/49506

Abstract: An integrated circuit (IC) device comprises a substrate comprising a glass core. The glass core comprises a first surface and a second surface opposite the first surface, and a first sidewall between the first surface and the second surface. The glass core may include a conductor within a through-glass via extending from the first surface to the second surface and a build-up layer. The glass cord comprises a plurality of first areas of the glass core and a plurality of laser-treated areas on the first sidewall. A first one of the plurality of laser-treated areas may be spaced away from a second one of the plurality of laser-treated areas. A first area may comprise a first nanoporosity and a laser-treated area may comprise a second nanoporosity, wherein the second nanoporosity is greater than the first nanoporosity.