公开(公告)号：WO2004017350A1

公开(公告)日：2004-02-26

申请号：PCT/US2003/025360

申请日：2003-08-13

Applicant: INTEL CORPORATION

Inventor： MA, Qing

IPC: H01H59/00

CPC classification number: H01H59/0009

Abstract: A microelectromechanical system (MEMS) switch that includes a signal contact (78), an actuation electrode (76) and a beam (80) that engages the signal contact when a voltage is applied to the actuation electrode. The signal contact includes a first portion and a second portion. The actuation electrode is positioned between the first and second portions of the signal contact.

Abstract translation: 一种微电子机械系统（MEMS）开关，其包括信号触点（78），致动电极（76）和光束（80），当电压施加到致动电极时，该光束接合信号触点。 信号触点包括第一部分和第二部分。 致动电极位于信号触点的第一和第二部分之间。

公开(公告)号：WO2004000718A3

公开(公告)日：2003-12-31

申请号：PCT/US2003/018306

申请日：2003-06-10

Applicant: INTEL CORPORATION

Inventor： MA, Qing ,  CHOU, Tsung-Kuan

IPC: B81B7/00

Abstract: A conductive bridge (16) in a second conductive layer may be utilized to join a pair of spaced apart conductive strips (12) in a first conductive layer. A gap (44) between the first and second strips (12) may be bridged by the bridge (16) while isolating both the 5 first and second strips (12) and the bridge (16) itself from another conductor (18) which extends through the gap (44) between the first and second strips (12).

公开(公告)号：WO2003052929A1

公开(公告)日：2003-06-26

申请号：PCT/US2002/040505

申请日：2002-12-17

Applicant: INTEL CORPORATION

Inventor： WANG, Li-Peng ,  MA, Qing ,  RAO, Valluri

IPC: H03H9/17

CPC classification number: H03H9/174 ,  H03H3/02 ,  H03H2003/023 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49156

Abstract: A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion. A method for forming the device includes depositing a first portion of a first electrode, and a piezoelectric layer onto the substrate. The method includes removing a portion of the substrate under the piezoelectric layer and under the portion of the first electrode, and depositing a second portion of the first electrode onto the piezoelectric film layer and onto the first portion of the first electrode.

Abstract translation: 在基板上形成膜体声波谐振器。 膜体声波谐振器包括具有靠近衬底的第一表面的压电材料层和远离衬底的第二表面。 沉积在压电材料的第一表面上的第一导电层包括具有与与第二部分相关联的表面不同的平面上的表面的第一部分。 一种形成该器件的方法包括将第一电极的第一部分和压电层沉积到该衬底上。 该方法包括：在压电层下面和第一电极的部分之下去除衬底的一部分，以及将第一电极的第二部分沉积在压电膜层上并沉积到第一电极的第一部分上。

公开(公告)号：WO2001056046A3

公开(公告)日：2001-08-02

申请号：PCT/US2001/002202

申请日：2001-01-22

Applicant: INTEL CORPORATION ,  CHENG, Peng ,  MA, Qing

Inventor： CHENG, Peng ,  MA, Qing

IPC: H01G5/16

Abstract: The invention relates to a variable capacitor and method of making it. The variable capacitor comprises a fixed charge plate disposed in a substrate, a movable charge plate disposed above the fixed charge plate, and a stiffener affixed to the movable charge plate. The movable charge plate may be patterned to form a movable actuator plate where the fixed charge plate is elevated above a fixed actuator plate.

公开(公告)号：EP1761456B1

公开(公告)日：2017-06-14

申请号：EP05767695.9

申请日：2005-06-23

Applicant: Intel Corporation

Inventor： HECK, John ,  MA, Qing ,  BAR-SADEH, Eyal

IPC: B81C1/00

CPC classification number: B81C1/0023 ,  Y10S977/701 ,  Y10S977/724

公开(公告)号：EP1784915A1

公开(公告)日：2007-05-16

申请号：EP05760464.7

申请日：2005-06-10

Applicant: Intel Corporation

Inventor： RAO, Valluri ,  MA, Qing ,  TRAN, Quan ,  SHIM, Dong ,  WANG, Li-Peng

IPC: H03H9/02

CPC classification number: H03H9/02102 ,  H03H2009/02196

Abstract: A film bulk acoustic resonator (FBAR) comprises a piezoelectric film sandwiched between a top electrode and a bottom electrode. A temperature sensor is provided to sense a temperature to determine a temperature induced frequency drift for the FBAR. A voltage controller operatively connected to the temperature sensor supplies a direct current (DC) bias voltage to the FBAR to induce an opposite voltage induced frequency drift to compensate for the temperature induced frequency drift.

公开(公告)号：EP1751858A1

公开(公告)日：2007-02-14

申请号：EP05737419.1

申请日：2005-04-13

Applicant: Intel Corporation

Inventor： MA, Qing ,  WANG, Li-Peng ,  SHIM, Dong ,  RAO, Valluri

IPC: H03H3/04 ,  H03H9/205 ,  H01L41/08

CPC classification number: H03H3/04 ,  H03H2003/0471 ,  H03H2003/0478

Abstract: Plural band film bulk acoustic resonators may be formed on the same integrated circuit using lithographic techniques. As a result, high volume production of reproducible components can be achieved, wherein the resonators, as manufactured, are designed to have different frequencies.

公开(公告)号：EP1430599A2

公开(公告)日：2004-06-23

申请号：EP02768929.8

申请日：2002-09-27

Applicant: INTEL CORPORATION

Inventor： CHENG, Peng ,  MA, Qing

IPC: H03H9/24

CPC classification number: B81B3/0078 ,  B81B2201/016 ,  B81B2203/019 ,  H03H3/0077 ,  H03H9/2463

Abstract: A micro-electromechanical (MEM) resonator is described that includes a substrate, a microbridge beam structure coupled to the substrate and at least one electrode disposed adjacent to the microbridge beam structure to induce vibration of the beam. The microbridge beam structure includes support sections and a beam formed between the support sections. The center region of the beam has a mass that is less than the mass of regions of the beam adjacent to the support sections.

公开(公告)号：EP1320888A2

公开(公告)日：2003-06-25

申请号：EP01977196.3

申请日：2001-09-25

Applicant: Intel Corporation

Inventor： MA, Qing ,  MAVEETY, James ,  TRAN, Quan

IPC: H01L23/367

CPC classification number: H01L23/36 ,  H01L23/3677 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/15151 ,  H01L2924/16151 ,  H01L2924/00 ,  H01L2224/0401

Abstract: A microelectronic die is aligned with a package substrate and attached to it using solder balls. A specially shaped heat spreader, preferably with a coefficient of thermal expansion (CTE) similar to that of silicon, is attached to the back side of the die using a heat-conducting adhesive. An epoxy-based material is flowed into the gap between the die, the substrate, and the heat spreader via a through-hole in either the substrate or the heat spreader using a dispense process or a transfer molding process. By positioning the heat spreader to abut the die corners and/or edges, the stresses on the die are substantially reduced or eliminated.

公开(公告)号：EP1354351B1

公开(公告)日：2009-04-15

申请号：EP01962043.4

申请日：2001-08-10

Applicant: Intel Corporation

Inventor： MU, Xiao-Chun ,  MA, Qing ,  FUJIMOTO, Harry

IPC: H01L23/31 ,  H01L21/56 ,  H01L21/60 ,  H01L23/538

CPC classification number: H01L21/568 ,  H01L21/56 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/4334 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/351 ,  H05K1/185 ,  H05K3/4602 ,  H01L2224/82 ,  H01L2224/83 ,  H01L2924/00

Abstract: A microelectronic package including a microelectronic die having an active surface and at least one side. An encapsulation material is disposed adjacent the microelectronic die side(s), wherein the encapsulation material includes at least one surface substantially planar to the microelectronic die active surface. A first dielectric material layer may be disposed on at least a portion of the microelectronic die active surface and the encapsulation material surface. At least one conductive trace is then disposed on the first dielectric material layer. The conductive trace(s) is in electrical contact with the microelectronic die active surface. At least one conductive trace extends adjacent the microelectronic die active surface and adjacent the encapsulation material surface.