公开(公告)号：US20150287599A1

公开(公告)日：2015-10-08

申请号：US14693900

申请日：2015-04-23

Applicant: Infineon Technologies AG

Inventor： Jens Schneider ,  Henning Feick ,  Marcel Heller ,  Dieter Kaiser

IPC: H01L21/266 ,  C23C14/04 ,  C23C14/48

CPC classification number: H01L21/266 ,  C23C14/042 ,  C23C14/48 ,  G01L1/2293 ,  G03F1/00 ,  G03F1/38 ,  G03F1/56 ,  G03F7/70058 ,  H01L21/0271 ,  H01L21/2652 ,  H01L21/26586 ,  H01L27/0255 ,  H01L29/0847 ,  H01L29/36 ,  H01L29/7835 ,  H01L29/8611 ,  H01L43/065 ,  H01L43/14 ,  Y10T428/24802

Abstract: Various embodiments provide a method for processing a carrier, the method including changing the three-dimensional structure of a mask layer arranged over the carrier so that at least two mask layer regions are formed having different mask layer thicknesses; and applying an ion implantation process to the at least two mask layer regions to form at least two implanted regions in the carrier having different implantation depth profiles.

Abstract translation: 各种实施例提供一种处理载体的方法，所述方法包括改变布置在载体上的掩模层的三维结构，使得形成具有不同掩模层厚度的至少两个掩模层区域; 以及向所述至少两个掩模层区域施加离子注入工艺以在所述载体中形成具有不同注入深度分布的至少两个注入区域。

公开(公告)号：US08809952B2

公开(公告)日：2014-08-19

申请号：US13707386

申请日：2012-12-06

Applicant: Infineon Technologies AG

Inventor： Erhard Landgraf ,  Thomas Bertrams ,  Claus Dahl ,  Henning Feick ,  Andreas Pribil

IPC: H01L29/78 ,  H01L21/3065

CPC classification number: H01L29/7816 ,  H01L21/02107 ,  H01L21/0334 ,  H01L21/266 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/401 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66325 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7393 ,  H01L29/7835

Abstract: A transistor component includes an active transistor region arranged in the semiconductor body. And insulation region surrounds the active transistor region in the semiconductor body in a ring-shaped manner. A source zone, a drain zone, a body zone and a drift zone are disposed in the active transistor region. The source zone and the drain zone are spaced apart in a lateral direction of the semiconductor body and the body zone is arranged between the source zone and the drift zone and the drift zone is arranged between the body zone and the drain zone. A gate and field electrode is arranged over the active transistor region. The dielectric layer has a first thickness in a region near the body zone and a second thickness in a region near the drift zone.

Abstract translation: 晶体管组件包括布置在半导体本体中的有源晶体管区域。 并且绝缘区域以环形方式围绕半导体主体中的有源晶体管区域。 源极区，漏极区，体区和漂移区设置在有源晶体管区域中。 源极区域和漏极区域在半导体主体的横向方向上间隔开，并且主体区域布置在源极区域和漂移区域之间，并且漂移区域布置在体区域和排出区域之间。 栅极和场电极布置在有源晶体管区域的上方。 电介质层在体区附近具有第一厚度，在漂移区附近的区域具有第二厚度。