公开(公告)号：US10594966B2

公开(公告)日：2020-03-17

申请号：US15472367

申请日：2017-03-29

Applicant: Infineon Technologies AG

Inventor： Henning Feick

IPC: H04N5/363 ,  H01L27/146 ,  H04N5/378

Abstract: An optical sensor device comprising a conversion region to convert an electromagnetic signal into photo-generated charge carriers is shown. The optical sensor device comprises a read-out node configured to read-out the photo-generated charge carriers and a control electrode which is separated by an isolating material from the conversion region. Furthermore, the optical sensor device comprises a doping region in the semiconductor substrate between the control electrode and the conversion region, wherein the doping region comprises a higher doping concentration compared to a minimum doping concentration of the conversion region, wherein the doping concentration is at least 1000 times higher than the minimum doping concentration of the conversion region and wherein the doping region extends into the semiconductor substrate. Moreover, a projection of the control electrode towards the conversion region overlaps the doping region or is located in the doping region. Embodiments show the optical sensor device as a time-of-flight sensor.

公开(公告)号：US10008621B2

公开(公告)日：2018-06-26

申请号：US15688356

申请日：2017-08-28

Applicant: Infineon Technologies AG

Inventor： Thomas Bever ,  Henning Feick ,  Dirk Offenberg ,  Stefano Parascandola ,  Ines Uhlig ,  Thoralf Kautzsch ,  Dirk Meinhold ,  Hanno Melzner

IPC: H01L31/0352 ,  H01L27/148 ,  G01S7/491

CPC classification number: H01L31/035272 ,  G01S7/4914 ,  H01L27/14806

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

公开(公告)号：US09984917B2

公开(公告)日：2018-05-29

申请号：US14283242

申请日：2014-05-21

Applicant: Infineon Technologies AG

Inventor： Christian Kuehn ,  Martin Bartels ,  Henning Feick ,  Dirk Offenberg ,  Anton Steltenpohl ,  Hans Taddiken ,  Ines Uhlig

IPC: H01L21/76 ,  H01L21/762 ,  H01L29/06 ,  H01L21/265

CPC classification number: H01L21/76237 ,  H01L21/26506 ,  H01L21/2652 ,  H01L21/26586 ,  H01L29/0607 ,  H01L29/0649

Abstract: A method for manufacturing a semiconductor device in accordance with various embodiments may include: forming an opening in a first region of a semiconductor substrate, the opening having at least one sidewall and a bottom; implanting dopant atoms into the at least one sidewall and the bottom of the opening; configuring at least a portion of a second region of the semiconductor substrate laterally adjacent to the first region as at least one of an amorphous or polycrystalline region; and forming an interconnect over at least one of the first and second regions of the semiconductor substrate.

公开(公告)号：US20170178909A1

公开(公告)日：2017-06-22

申请号：US15447268

申请日：2017-03-02

Applicant: Infineon Technologies AG

Inventor： Jens Schneider ,  Henning Feick ,  Marcel Heller ,  Dieter Kaiser

IPC: H01L21/266 ,  G03F1/38 ,  C23C14/48 ,  H01L21/265 ,  C23C14/04

CPC classification number: H01L21/266 ,  C23C14/042 ,  C23C14/48 ,  G01L1/2293 ,  G03F1/00 ,  G03F1/38 ,  G03F1/56 ,  G03F7/70058 ,  H01L21/0271 ,  H01L21/2652 ,  H01L21/26586 ,  H01L27/0255 ,  H01L29/0847 ,  H01L29/36 ,  H01L29/7835 ,  H01L29/8611 ,  H01L43/065 ,  H01L43/14 ,  Y10T428/24802

Abstract: Various embodiments provide a method for processing a carrier, the method including changing the three-dimensional structure of a mask layer arranged over the carrier so that at least two mask layer regions are formed having different mask layer thicknesses; and applying an ion implantation process to the at least two mask layer regions to form at least two implanted regions in the carrier having different implantation depth profiles.

公开(公告)号：US12176339B2

公开(公告)日：2024-12-24

申请号：US17873742

申请日：2022-07-26

Applicant: Infineon Technologies AG

Inventor： Juergen Faul ,  Andreas Urban Bertl ,  Henning Feick

IPC: H01L27/02 ,  G05F3/20

Abstract: An electronic device is disclosed. The electronic device includes: a first doped region of a first doping type arranged in a first semiconductor layer of a second doping type complementary to the first doping type; an insulation layer formed on top of the first semiconductor layer and adjoining the first doped region; at least two active device regions arranged in a second semiconductor layer formed on top of the insulation layer; and an electrical connection between one of the at least two active device regions and the first doped region. Each of the at least two active device regions is arranged adjacent to the first doped region and separated from the first doped region by the insulation layer.

公开(公告)号：US20230029591A1

公开(公告)日：2023-02-02

申请号：US17873742

申请日：2022-07-26

Applicant: Infineon Technologies AG

Inventor： Juergen Faul ,  Andreas Urban Bertl ,  Henning Feick

IPC: H01L27/02 ,  G05F3/20

Abstract: An electronic device is disclosed. The electronic device includes: a first doped region of a first doping type arranged in a first semiconductor layer of a second doping type complementary to the first doping type; an insulation layer formed on top of the first semiconductor layer and adjoining the first doped region; at least two active device regions arranged in a second semiconductor layer formed on top of the insulation layer; and an electrical connection between one of the at least two active device regions and the first doped region. Each of the at least two active device regions is arranged adjacent to the first doped region and separated from the first doped region by the insulation layer.

公开(公告)号：US10707362B2

公开(公告)日：2020-07-07

申请号：US15881100

申请日：2018-01-26

Applicant: Infineon Technologies AG

Inventor： Thomas Bever ,  Henning Feick ,  Dirk Offenberg ,  Stefano Parascandola ,  Ines Uhlig ,  Thoralf Kautzsch ,  Dirk Meinhold ,  Hanno Melzner

IPC: H01L31/0352 ,  G01S7/4914 ,  H01L27/148

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

公开(公告)号：US10545225B2

公开(公告)日：2020-01-28

申请号：US15783062

申请日：2017-10-13

Applicant: Infineon Technologies AG ,  pmdtechnologies ag

Inventor： Stefano Parascandola ,  Henning Feick ,  Matthias Franke ,  Dirk Offenberg ,  Jens Prima ,  Robert Roessler ,  Michael Sommer

IPC: H04N13/257 ,  H01L27/146 ,  G01S17/36

Abstract: An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate with a conversion region configured to convert at least a portion of the electromagnetic signal into photo-generated charge carriers. A deep control electrode is formed in a trench extending into the semiconductor substrate. The deep control electrode extends deeper into the semiconductor substrate than a shallow control electrode. A control circuit is configured to apply to the deep control electrode and to the shallow control electrode varying potentials having a fixed phase relationship to each other, to generate electric potential distributions in the conversion region, by which the photo-generated charge carriers in the conversion region are directed. The directed photo-generated charge carriers are detected at at least one readout node.

公开(公告)号：US10541261B2

公开(公告)日：2020-01-21

申请号：US15783071

申请日：2017-10-13

Applicant: Infineon Technologies AG ,  pmdtechnologies ag

Inventor： Robert Roessler ,  Henning Feick ,  Matthias Franke ,  Dirk Offenberg ,  Stefano Parascandola ,  Jens Prima

IPC: H01L27/146 ,  G01S17/08 ,  H01L23/48 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/101

Abstract: An optical sensor device includes a semiconductor substrate including a conversion region to convert an electromagnetic signal into photo-generated charge carriers, a read-out node configured to read-out a first portion of the photo-generated charge carriers, a control electrode, which is formed in a trench extending into the semiconductor substrate, and a doping region in the semiconductor substrate, where the doping region is adjacent to the trench, where the doping region has a doping type different from the read out node, and where the doping region has a doping concentration so that the doping region remains depleted during operation.

公开(公告)号：US10455178B2

公开(公告)日：2019-10-22

申请号：US15472340

申请日：2017-03-29

Applicant: Infineon Technologies AG

Inventor： Henning Feick

IPC: H04N5/374 ,  H04N5/378 ,  G01S17/00 ,  H04N5/3745

Abstract: An optical sensor device, which may be a time-of-flight sensor, comprises a pixel array having a plurality of pixels. Moreover, the optical sensor device comprises a read-out node configured to provide photo-generated charge carriers from a first pixel and a second pixel for read-out and a first transfer gate configured to enable a read-out of the first pixel using the read-out node and a second transfer gate to disable a read-out of the second pixel during read-out of the first pixel.