HYBRID FINE LINE SPACING ARCHITECTURE FOR BUMP PITCH SCALING

    公开(公告)号:US20200312665A1

    公开(公告)日:2020-10-01

    申请号:US16363688

    申请日:2019-03-25

    Abstract: Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, an electronic package comprises a package substrate, a first die over the package substrate, the first die having a first bump pitch, a second die over the package substrate, the second die having a second bump pitch that is greater than the first bump pitch, and a plurality of conductive traces over the package substrate, the plurality of conductive traces electrically coupling the first die to the second die. In an embodiment, a first end region of the plurality of conductive traces proximate to the first die has a first line space (L/S) dimension, and a second end region of the plurality of conductive traces proximate to the second die has a second L/S dimension. In an embodiment, the second L/S dimension is greater than the first L/S dimension.

    SELECTIVE METAL DEPOSITION BY PATTERNING DIRECT ELECTROLESS METAL PLATING

    公开(公告)号:US20200251332A1

    公开(公告)日:2020-08-06

    申请号:US16269357

    申请日:2019-02-06

    Abstract: Embodiments include package substrates and a method of forming the package substrates. A package substrate includes a self-assembled monolayer (SAM) layer over a first dielectric, where the SAM layer includes first end groups and second end groups. The second end groups may include a plurality of hydrophobic moieties. The package substrate also includes a conductive pad on the first dielectric, where the conductive pad has a bottom surface, a top surface, and a sidewall, and where the SAM layer surrounds and contacts a surface of the sidewall of the conductive pad. The hydrophobic moieties may include fluorinated moieties. The conductive pad includes a copper material, where the top surface of the conductive pad has a surface roughness that is approximately equal to a surface roughness of the as-plated copper material. The SAM layer may have a thickness that is approximately 0.1 nm to 20 nm.

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